Транзистор s9015

Биполярный транзистор STS9014 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: STS9014

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 60
MHz

Ёмкость коллекторного перехода (Cc): 2
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO-92

STS9014
Datasheet (PDF)

1.1. gsts9014lt1.pdf Size:221K _upd

GSTS9014LT1
NPN General Purpose Transistor
Product Description Features
This device is designed as a general purpose Collector-Emitter Voltage : 45V
amplifier and switch. Collector Current : 100mA
Lead(Pb)-Free
Packages & Pin Assignments
SOT-23
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N Package Rank Part Marking
GSTS9014LT1F SOT-23 Q 14Q

1.2. sts9014.pdf Size:207K _auk

 STS9014
NPN Silicon Transistor
Description
PIN Connection
• General purpose application
C
• Switching application
Features
B
• Excellent hFE linearity : hFE(IC=0.1 mA) /
hFE(IC=2 mA) = 0.95(Typ.)
• Low noise : NF=10dB(Max.) at f=1KHz
E
• Complementary pair with STS9015
TO-92
Ordering Information
Type NO. Marking Package Code
STS9014 STS9014 TO-92
A

 4.1. sts9013.pdf Size:197K _auk

 STS9013
NPN Silicon Transistor
Descriptions
PIN Connection
• General purpose application.
C
• Switching application.
B
Features
• Excellent hFE linearity.
E
• Complementary pair with STS9012
TO-92
Ordering Information
Type NO. Marking Package Code
STS9013 STS9013 TO-92
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-B

4.2. sts9012.pdf Size:106K _auk

 STS9012
Semiconductor
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity.
• Complementary pair with STS9013
Ordering Information
Type NO. Marking Package Code
STS9012 STS9012 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54

 4.3. sts9015.pdf Size:97K _auk

 STS9015
Semiconductor
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.)
• Low noise : NF = 10dB(Max.)
• Complementary pair with STS9014
Ordering Information
Type NO. Marking Package Code
STS9015 STS9015 TO-92
Outline Dimensions uni

4.4. sts9018.pdf Size:232K _auk

 STS9018
NPN Silicon Transistor
Description
PIN Connection
• High frequency low noise amplifier application
C
• VHF band amplifier application
B
Features
• Low noise figure : NF = 4dB(Max.) at f=100MHz
• High transition frequency fT = 800MHz(Typ.)
E
TO-92
Ordering Information
Type NO. Marking Package Code
STS9018 STS9018 TO-92
Absolute maximum ratings T

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

DMBT9014 Datasheet (PDF)

1.1. dmbt9014.pdf Size:157K _upd

DC COMPONENTS CO., LTD.
DMBT9014
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
3
2 = Emitter
.063(1.60) .108(0.65)
3 = Collector
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC)
.045(1.15)
.034(0.85)
.

3.1. dmbt9013.pdf Size:144K _upd

DC COMPONENTS CO., LTD.
DMBT9013
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
SOT-23
.020(0.50)
Pinning
.012(0.30)
1 = Base
2 = Emitter
3
3 = Collector .063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC)
.045(1.15)
.034(0.85)
.091(2.30)
Cha

3.2. dmbt9018.pdf Size:77K _upd

DC COMPONENTS CO., LTD.
DMBT9018
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
SOT-23
.020(0.50)
Pinning
.012(0.30)
1 = Base
2 = Emitter 3
.063(1.60) .108(0.65)
3 = Collector
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC) .045(1.15)
.034

 3.3. dmbt9012.pdf Size:173K _upd

DC COMPONENTS CO., LTD.
DMBT9012
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
SOT-23
.020(0.50)
Pinning
.012(0.30)
1 = Base
2 = Emitter
3
3 = Collector .063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC)
.045(1.15)
.034(0.85)
.091(2.30)
Cha

L9014 Datasheet (PDF)

1.1. l9014.pdf Size:127K _upd

LESHAN RADIO COMPANY, LTD.
NPN Epitaxial Silicon
L9014
Transistor
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE and good linearity
• Complementary to L9015
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 50 V
VCEO Collecto

1.2. sihfl9014.pdf Size:169K _upd-mosfet

IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
• Surface Mount
RDS(on) ()VGS = — 10 V 0.50
• Available in Tape and Reel
Qg (Max.) (nC) 12
• Dynamic dV/dt Rating
Qgs (nC) 3.8
• Repetitive Avalanche Rated
• P-Channel
Qgd (nC) 5.1
• Fast Switching
Configuration Single

 1.3. irfl9014.pdf Size:222K _international_rectifier

PD — 90863A
IRFL9014
HEXFET Power MOSFET
Surface Mount
Available in Tape & Reel D
VDSS = -60V
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P-Channel
RDS(on) = 0.50?
Fast Switching
G
Ease of Paralleling
ID = -1.8A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design

1.4. irfl9014pbf.pdf Size:256K _international_rectifier

PD — 95153
IRFL9014PbF
HEXFET Power MOSFET
l Surface Mount
l Available in Tape & Reel D
VDSS = -60V
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l P-Channel
RDS(on) = 0.50?
l Fast Switching
G
l Ease of Paralleling
l Lead-Free
ID = -1.8A
S
Descripti?n
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, rug

 1.5. irfl9014 sihfl9014.pdf Size:168K _vishay

IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
Surface Mount
RDS(on) (?)VGS = — 10 V 0.50
Available in Tape and Reel
Qg (Max.) (nC) 12
Dynamic dV/dt Rating
Qgs (nC) 3.8
Repetitive Avalanche Rated
P-Channel
Qgd (nC) 5.1
Fast Switching
Configuration Single
Ease of Paralleli

1.6. l9014slt1g.pdf Size:98K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L9014QLT1G
FEATURE
Complementary to L9014.
Series
We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
Series
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INF

1.7. l9014tlt1g.pdf Size:99K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Complementary to L9014.
L9014QLT1G
We declare that the material of product compliance with RoHS requirements.
Series
S- Prefix for Automotive and Other Applications Requiring Unique Site
S-L9014QLT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Series
DEVICE MARKING AND ORDERING IN

1.8. l9014rlt1g.pdf Size:99K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Complementary to L9014. L9014QLT1G
We declare that the material of product compliance with RoHS requirements.
Series
S- Prefix for Automotive and Other Applications Requiring Unique Site
S-L9014QLT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Series
DEVICE MARKING AND ORDERING IN

1.9. l9014qlt1g.pdf Size:105K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
L9014QLT1G
Complementary to L9014.
Series
We declare that the material of product compliance with RoHS requirements.
S-L9014QLT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Series
DEVICE MARKING AND ORDERING IN

Биполярный транзистор KTC9014SC — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTC9014SC

Маркировка: CBD

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.35
W

Макcимально допустимое напряжение коллектор-база (Ucb): 80
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

KTC9014SC
Datasheet (PDF)

1.1. ktc9014sc.pdf Size:651K _update

SEMICONDUCTOR KTC9014SC
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
·Complementary to KTC9015SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 80 V
VCEO
Collector-Emitter Voltage 50 V
VEBO
Emitter-Base Voltag

2.1. ktc9014s.pdf Size:396K _kec

SEMICONDUCTOR KTC9014S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
Excellent hFE Linearity
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
C 1.30 MAX
2
Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
Complementary to KTC9015S.
1
G 1.90

 3.1. ktc9014.pdf Size:349K _kec

SEMICONDUCTOR KTC9014
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
·Low Noise :NF=1dB(Typ.) at f=1kHz.
A 4.70 MAX
E
K
B 4.80 MAX
·Complementary to KTC9015. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATI

3.2. ktc9014a.pdf Size:343K _kec

SEMICONDUCTOR KTC9014A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
·Low Noise :NF=1dB(Typ.) at f=1kHz.
A 4.70 MAX
E
K
B 4.80 MAX
·Complementary to KTC9015A. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RA

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

STS9014 Datasheet (PDF)

1.1. gsts9014lt1.pdf Size:221K _upd

GSTS9014LT1
NPN General Purpose Transistor
Product Description Features
This device is designed as a general purpose Collector-Emitter Voltage : 45V
amplifier and switch. Collector Current : 100mA
Lead(Pb)-Free
Packages & Pin Assignments
SOT-23
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N Package Rank Part Marking
GSTS9014LT1F SOT-23 Q 14Q

1.2. sts9014.pdf Size:207K _auk

 STS9014
NPN Silicon Transistor
Description
PIN Connection
• General purpose application
C
• Switching application
Features
B
• Excellent hFE linearity : hFE(IC=0.1 mA) /
hFE(IC=2 mA) = 0.95(Typ.)
• Low noise : NF=10dB(Max.) at f=1KHz
E
• Complementary pair with STS9015
TO-92
Ordering Information
Type NO. Marking Package Code
STS9014 STS9014 TO-92
A

 4.1. sts9013.pdf Size:197K _auk

 STS9013
NPN Silicon Transistor
Descriptions
PIN Connection
• General purpose application.
C
• Switching application.
B
Features
• Excellent hFE linearity.
E
• Complementary pair with STS9012
TO-92
Ordering Information
Type NO. Marking Package Code
STS9013 STS9013 TO-92
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-B

4.2. sts9012.pdf Size:106K _auk

 STS9012
Semiconductor
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity.
• Complementary pair with STS9013
Ordering Information
Type NO. Marking Package Code
STS9012 STS9012 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54

 4.3. sts9015.pdf Size:97K _auk

 STS9015
Semiconductor
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.)
• Low noise : NF = 10dB(Max.)
• Complementary pair with STS9014
Ordering Information
Type NO. Marking Package Code
STS9015 STS9015 TO-92
Outline Dimensions uni

4.4. sts9018.pdf Size:232K _auk

 STS9018
NPN Silicon Transistor
Description
PIN Connection
• High frequency low noise amplifier application
C
• VHF band amplifier application
B
Features
• Low noise figure : NF = 4dB(Max.) at f=100MHz
• High transition frequency fT = 800MHz(Typ.)
E
TO-92
Ordering Information
Type NO. Marking Package Code
STS9018 STS9018 TO-92
Absolute maximum ratings T

Биполярный транзистор 2SC9014 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC9014

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.45
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Ёмкость коллекторного перехода (Cc): 3.5
pf

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO-92

2SC9014
Datasheet (PDF)

1.1. 2sc9014.pdf Size:76K _update

Transistors
2SC9014

1.2. 2sc9014.pdf Size:222K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC9014
DESCRIPTION
·High total power dissipation
·High hFE and good linearity
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for Switching and amplification
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 50 V
CBO
V Coll

 4.1. 2sc9013.pdf Size:84K _usha

Transistors
2SC9013
Downloaded from Elcodis.com electronic components distributor
Downloaded from Elcodis.com electronic components distributor

4.2. 2sc9018.pdf Size:77K _usha

Transistors
2SC9018
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

KTC9014SC Datasheet (PDF)

1.1. ktc9014sc.pdf Size:651K _update

SEMICONDUCTOR KTC9014SC
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
·Complementary to KTC9015SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 80 V
VCEO
Collector-Emitter Voltage 50 V
VEBO
Emitter-Base Voltag

2.1. ktc9014s.pdf Size:396K _kec

SEMICONDUCTOR KTC9014S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
Excellent hFE Linearity
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
C 1.30 MAX
2
Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
Complementary to KTC9015S.
1
G 1.90

 3.1. ktc9014.pdf Size:349K _kec

SEMICONDUCTOR KTC9014
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
·Low Noise :NF=1dB(Typ.) at f=1kHz.
A 4.70 MAX
E
K
B 4.80 MAX
·Complementary to KTC9015. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATI

3.2. ktc9014a.pdf Size:343K _kec

SEMICONDUCTOR KTC9014A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
·Low Noise :NF=1dB(Typ.) at f=1kHz.
A 4.70 MAX
E
K
B 4.80 MAX
·Complementary to KTC9015A. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RA

Биполярный транзистор DMBT9014 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: DMBT9014

Маркировка: J6

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.225
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT-23

DMBT9014
Datasheet (PDF)

1.1. dmbt9014.pdf Size:157K _upd

DC COMPONENTS CO., LTD.
DMBT9014
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
3
2 = Emitter
.063(1.60) .108(0.65)
3 = Collector
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC)
.045(1.15)
.034(0.85)
.

3.1. dmbt9013.pdf Size:144K _upd

DC COMPONENTS CO., LTD.
DMBT9013
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
SOT-23
.020(0.50)
Pinning
.012(0.30)
1 = Base
2 = Emitter
3
3 = Collector .063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC)
.045(1.15)
.034(0.85)
.091(2.30)
Cha

3.2. dmbt9018.pdf Size:77K _upd

DC COMPONENTS CO., LTD.
DMBT9018
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
SOT-23
.020(0.50)
Pinning
.012(0.30)
1 = Base
2 = Emitter 3
.063(1.60) .108(0.65)
3 = Collector
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC) .045(1.15)
.034

 3.3. dmbt9012.pdf Size:173K _upd

DC COMPONENTS CO., LTD.
DMBT9012
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
SOT-23
.020(0.50)
Pinning
.012(0.30)
1 = Base
2 = Emitter
3
3 = Collector .063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1 2
Absolute Maximum Ratings(TA=25oC)
.045(1.15)
.034(0.85)
.091(2.30)
Cha

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

Биполярный транзистор L9014 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: L9014

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.45
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Ёмкость коллекторного перехода (Cc): 2.2
pf

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO-92

L9014
Datasheet (PDF)

1.1. l9014.pdf Size:127K _upd

LESHAN RADIO COMPANY, LTD.
NPN Epitaxial Silicon
L9014
Transistor
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE and good linearity
• Complementary to L9015
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 50 V
VCEO Collecto

1.2. sihfl9014.pdf Size:169K _upd-mosfet

IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
• Surface Mount
RDS(on) ()VGS = — 10 V 0.50
• Available in Tape and Reel
Qg (Max.) (nC) 12
• Dynamic dV/dt Rating
Qgs (nC) 3.8
• Repetitive Avalanche Rated
• P-Channel
Qgd (nC) 5.1
• Fast Switching
Configuration Single

 1.3. irfl9014.pdf Size:222K _international_rectifier

PD — 90863A
IRFL9014
HEXFET Power MOSFET
Surface Mount
Available in Tape & Reel D
VDSS = -60V
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P-Channel
RDS(on) = 0.50?
Fast Switching
G
Ease of Paralleling
ID = -1.8A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design

1.4. irfl9014pbf.pdf Size:256K _international_rectifier

PD — 95153
IRFL9014PbF
HEXFET Power MOSFET
l Surface Mount
l Available in Tape & Reel D
VDSS = -60V
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l P-Channel
RDS(on) = 0.50?
l Fast Switching
G
l Ease of Paralleling
l Lead-Free
ID = -1.8A
S
Descripti?n
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, rug

 1.5. irfl9014 sihfl9014.pdf Size:168K _vishay

IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
Surface Mount
RDS(on) (?)VGS = — 10 V 0.50
Available in Tape and Reel
Qg (Max.) (nC) 12
Dynamic dV/dt Rating
Qgs (nC) 3.8
Repetitive Avalanche Rated
P-Channel
Qgd (nC) 5.1
Fast Switching
Configuration Single
Ease of Paralleli

1.6. l9014slt1g.pdf Size:98K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L9014QLT1G
FEATURE
Complementary to L9014.
Series
We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
Series
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INF

1.7. l9014tlt1g.pdf Size:99K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Complementary to L9014.
L9014QLT1G
We declare that the material of product compliance with RoHS requirements.
Series
S- Prefix for Automotive and Other Applications Requiring Unique Site
S-L9014QLT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Series
DEVICE MARKING AND ORDERING IN

1.8. l9014rlt1g.pdf Size:99K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Complementary to L9014. L9014QLT1G
We declare that the material of product compliance with RoHS requirements.
Series
S- Prefix for Automotive and Other Applications Requiring Unique Site
S-L9014QLT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Series
DEVICE MARKING AND ORDERING IN

1.9. l9014qlt1g.pdf Size:105K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
L9014QLT1G
Complementary to L9014.
Series
We declare that the material of product compliance with RoHS requirements.
S-L9014QLT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Series
DEVICE MARKING AND ORDERING IN

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC9014 Datasheet (PDF)

1.1. 2sc9014.pdf Size:76K _update

Transistors
2SC9014

1.2. 2sc9014.pdf Size:222K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC9014
DESCRIPTION
·High total power dissipation
·High hFE and good linearity
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for Switching and amplification
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 50 V
CBO
V Coll

 4.1. 2sc9013.pdf Size:84K _usha

Transistors
2SC9013
Downloaded from Elcodis.com electronic components distributor
Downloaded from Elcodis.com electronic components distributor

4.2. 2sc9018.pdf Size:77K _usha

Transistors
2SC9018
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.

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