Транзистор h945

2SC945L Datasheet (PDF)

1.1. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

4.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

4.2. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 4.3. 2sc945.pdf Size:73K _nec

4.4. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

 4.5. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

4.6. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

4.7. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

4.8. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

Биполярный транзистор 2SC945P — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC945P

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 2.5
pf

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: TO92

2SC945P
Datasheet (PDF)

4.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

4.2. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 4.3. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

4.4. 2sc945.pdf Size:73K _nec

 4.5. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

4.6. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

4.7. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

4.8. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

4.9. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC945P Datasheet (PDF)

4.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

4.2. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 4.3. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

4.4. 2sc945.pdf Size:73K _nec

 4.5. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

4.6. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

4.7. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

4.8. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

4.9. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

2SC945R Datasheet (PDF)

4.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

4.2. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 4.3. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

4.4. 2sc945.pdf Size:73K _nec

 4.5. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

4.6. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

4.7. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

4.8. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

4.9. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

Биполярный транзистор KTC945 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTC945

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 2
pf

Статический коэффициент передачи тока (hfe): 90

Корпус транзистора: TO92

KTC945
Datasheet (PDF)

1.1. ktc945.pdf Size:44K _kec

SEMICONDUCTOR KTC945
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
N DIM MILLIMETERS
Low Noise : NF=1dB(Typ.). at f=1kHz
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTA733. G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MAXIMUM RATING (Ta=2

1.2. ktc945b.pdf Size:272K _kec

SEMICONDUCTOR KTC945B
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
N DIM MILLIMETERS
Low Noise : NF=1dB(Typ.). at f=1kHz
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTA733B(O, Y, GR class). G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
MA

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC941 Datasheet (PDF)

1.1. 2sc941.pdf Size:229K _toshiba

1.2. 2sc941tm.pdf Size:249K _toshiba

2SC941TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
High Frequency Amplifier Applications
Unit: mm
AM High Frequency Amplifier Applications
AM Frequency Converter Applications
• Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 35 V
Collector-emitter

 5.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

5.2. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 5.3. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

5.4. 2sc945.pdf Size:73K _nec

 5.5. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

5.6. 2sc947.pdf Size:43K _no

5.7. 2sc943.pdf Size:46K _no

5.8. 2sc940.pdf Size:42K _no

5.9. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

5.10. 2sc940.pdf Size:151K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC940
DESCRIPTION
·With TO-3 package
·High current capability
·Wide area of safe operation
APPLICATIONS
·For B/W TV horizontal deflection application
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CON

5.11. 2sc940.pdf Size:191K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC940
DESCRIPTION
·High Breakdown Voltage-
: V = 90V(Min)
CEO
·Wide Safe Operating Area
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for B/W TV horizontal deflection output applications.
·Suitable for horizontal output applications in 12~24 inch B/W
TV, and switching applications of 5

5.12. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

5.13. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

5.14. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

KSC945 Datasheet (PDF)

1.1. ksc945 .pdf Size:42K _fairchild_semi

KSC945
Audio Frequency Amplifier & High
Frequency OSC.
Complement to KSA733
Collector-Base Voltage : VCBO=60V
High Current Gain Bandwidth Product : fT=300MHz (TYP)
Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter

1.2. ksc945.pdf Size:126K _fairchild_semi

Audio Frequency AmpIifier & High
Frequency OSC.
Complement to KSA733
Collector-Base Voltage : VCBO=60V
High Current Gain Bandwidth Product : fT=300MHz (TYP.)
TO-92

1. Emitter 2. Base 3. Collector
NPN EpitaxiaI SiIicon Transistor
AbsoIute Maximum Ratings Ta=25C unless otherwise noted
SymboI Parameter VaIue Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emit

 1.3. ksc945.pdf Size:73K _utc

UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
DESCRIPTION
The UTC KSC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
1
FEATURES
*Collector-Base voltage:
BVCBO=60V
TO-92
*Collector current up to 150mA
*High hFE linearity
*Complimentary to KSA733
1:EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE M

Другие разделы справочника:

Добавить описание полевого транзистора.Добавить описание биполярного транзистора.Добавить описание биполярного транзистора с изолированным затвором.Поиск транзистора по маркировке.Поиск биполярного транзистора по основным параметрам.Поиск полевого транзистора по основным параметрам.Поиск БТИЗ (IGBT) по основным параметрам.Типоразмеры корпусов транзисторов.Магазины электронных компонентов.

Есть надежда, что справочник транзисторов окажется полезен опытным и начинающим радиолюбителям, конструкторам и учащимся. Всем тем, кто так или иначе сталкивается с необходимостью узнать больше о параметрах транзисторов. Более подробную информацию обо всех возможностях этого интернет-справочника можно прочитать на странице «О сайте».
Если Вы заметили ошибку, огромная просьба написать письмо.
Спасибо за терпение и сотрудничество.

Биполярный транзистор 2SC945-GR — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC945-GR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.4
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: TO92

2SC945-GR
Datasheet (PDF)

1.1. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

3.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 4.1. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

4.2. 2sc945.pdf Size:73K _nec

 4.3. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

4.4. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

 4.5. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

4.6. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

4.7. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

Основные параметры биполярного высокочастотного npn транзистора C945 (С945)

Эта страница создана пользователем сайта через систему Коллективного разума и показывает существующую справочную информацию о параметрах биполярного высокочастотного npn транзистора C945 (С945) . Информация о параметрах, цоколевке, характеристиках, местах продажи и производителях.

Исходный полупроводниковый материал, на основе которого изготовлен транзистор: кремнийСтруктура полупроводникового перехода: npn

Pc max, мВт Ucb max, В Uce max, В Ueb max, В Ic max, мА Tj max, °C Ft max, Гц Cc tip, пФ Hfe
400 60 50 5 150 150 200000000 3 70/700

Производитель: WEITRONСфера применения: Популярность: 58394Дополнительные параметры транзистора C945 (С945):
Внимание! У разных производителей транзистора с945 — разная цоколевка. Например у Daya Electric Group Co., Ltd.: 123-ebc

Проверяйте перед установкой.Условные обозначения описаны на странице «Теория».

2SC945-GR Datasheet (PDF)

1.1. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

3.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 4.1. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

4.2. 2sc945.pdf Size:73K _nec

 4.3. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

4.4. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

 4.5. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

4.6. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

4.7. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

2SC945 Datasheet (PDF)

1.1. 2sc945-y.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

1.2. 2sc945-gr.pdf Size:244K _update

MCC
2SC945-Y
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC945-GR
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Capable of 0.4Watts of Power Dissipation. NPN Silicon
• Collector-current 0.15A
Plastic-Encapsulate
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC

 1.3. 2sc945lt1.pdf Size:634K _update

SEMICONDUCTOR 2SC945LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
Package:SOT-23
* Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V

1.4. 2sc945.pdf Size:73K _nec

 1.5. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC945 NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
Lead-free: 2SC945L
* Complimentary to UTC 2SA733

1.6. 2sc945.pdf Size:226K _no

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor ST
2SA733 is recommended.
On special request, these transistors can be
1. Emitter 2. Collector 3. Base
manufactured in different pin configurati

1.7. 2sc945.pdf Size:189K _inchange_semiconductor

isc Silicon NPN Transistor 2SC945
DESCRIPTION
·High Voltage
·Excellent h linearity
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier
and low speed switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Vol

1.8. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
耐压高,放大特性好。
High voltage, excellent hFE linearity.
用途 / Applications
用于一般放大及低速开关。
General power amplifier application and low speed switching.

1.9. 2sc945.pdf Size:781K _kexin

SMD Type
SMD Type si o ors
SMD Type TranDistdes
NPN Transistors
2SC945
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector current up to 150mA
● High hFE linearity
1 2
● Complementary to 2SA733
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector

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