Кт807б

Биполярный транзистор BU807 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BU807

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60
W

Макcимально допустимое напряжение коллектор-база (Ucb): 330
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 8
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO220

BU807
Datasheet (PDF)

1.1. bu806 bu807.pdf Size:57K _st

BU806
BU807

MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
NPN DARLINGTONS
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
HORIZONTAL DEFLECTION FOR
3
2
MONOCHROME TVs
1
DESCRIPTION
TO-220
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configurati

1.2. bu806 bu807.pdf Size:39K _fairchild_semi

BU806/807
High Voltage & Fast Switching Darlington
Transistor
Using In Horizontal Output Stages of 110
Crt Video Displays

BUILT-IN SPEED-UP Diode Between Base and Emitter
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
:

 1.3. bu806 bu807.pdf Size:54K _samsung

NPN EPITAXIAL
BU806/807 SILICON DARLINGTON TRANSISTOR
FAST SWITCHING DARLINGTON
TO-220
TRANSISTOR
HIGH VOLTAGE DARLINGTON TRANSISTOR
USING IN HORIZONTAL OUTPUT STAGES
OF 110 CTR VIDEO DISPLAYS
BUILT-IN SPEED-UP Diode Between Base and Emitter
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage : BU806 VCBO 400 V
1.Base 2.Collector 3.Emitter
: BU807 330

1.4. bu807fi.pdf Size:197K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor BU807FI
DESCRIPTION
·High Voltage: V = 330V(Min)
CBO
·Low Saturation Voltage-
: V = 1.5V(Max)@ I = 5A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMET

 1.5. bu807f.pdf Size:200K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor BU807F
DESCRIPTION
·High Voltage: V = 330V(Min)
CBO
·Low Saturation Voltage-
: V = 1.5V(Max)@ I = 5A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETE

1.6. bu807.pdf Size:196K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor BU807
DESCRIPTION
·High Voltage: V = 330V(Min)
CBO
·Low Saturation Voltage-
: V = 1.5V(Max)@ I = 5A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER

Другие транзисторы… BU726
, BU800
, BU800A
, BU800S
, BU801
, BU806
, BU806F
, BU806FI
, 2SC2078
, BU807F
, BU807FI
, BU808
, 2SB647-C
, BU808DFI
, BU808DXI
, BU808FI
, BU810
.

BU807 Datasheet (PDF)

1.1. bu806 bu807.pdf Size:57K _st

BU806
BU807

MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
NPN DARLINGTONS
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
HORIZONTAL DEFLECTION FOR
3
2
MONOCHROME TVs
1
DESCRIPTION
TO-220
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configurati

1.2. bu806 bu807.pdf Size:39K _fairchild_semi

BU806/807
High Voltage & Fast Switching Darlington
Transistor
Using In Horizontal Output Stages of 110
Crt Video Displays

BUILT-IN SPEED-UP Diode Between Base and Emitter
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
:

 1.3. bu806 bu807.pdf Size:54K _samsung

NPN EPITAXIAL
BU806/807 SILICON DARLINGTON TRANSISTOR
FAST SWITCHING DARLINGTON
TO-220
TRANSISTOR
HIGH VOLTAGE DARLINGTON TRANSISTOR
USING IN HORIZONTAL OUTPUT STAGES
OF 110 CTR VIDEO DISPLAYS
BUILT-IN SPEED-UP Diode Between Base and Emitter
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage : BU806 VCBO 400 V
1.Base 2.Collector 3.Emitter
: BU807 330

1.4. bu807fi.pdf Size:197K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor BU807FI
DESCRIPTION
·High Voltage: V = 330V(Min)
CBO
·Low Saturation Voltage-
: V = 1.5V(Max)@ I = 5A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMET

 1.5. bu807f.pdf Size:200K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor BU807F
DESCRIPTION
·High Voltage: V = 330V(Min)
CBO
·Low Saturation Voltage-
: V = 1.5V(Max)@ I = 5A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETE

1.6. bu807.pdf Size:196K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor BU807
DESCRIPTION
·High Voltage: V = 330V(Min)
CBO
·Low Saturation Voltage-
: V = 1.5V(Max)@ I = 5A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER

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