C5353 транзистор характеристики

2SC5698 Datasheet (PDF)

1.1. 2sc5698.pdf Size:29K _sanyo

Ordering number : ENN6664A
2SC5698
NPN Triple Diffused Planar Silicon Transistor
2SC5698
CRT Display Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
On-chip damper diode. 3.1
2.8
2.0 2.1
0.9
0.

4.1. 2sc5696.pdf Size:29K _update_bjt

Ordering number : ENN6663B
2SC5696
NPN Triple Diffused Planar Silicon Transistor
2SC5696
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
• High speed.
unit : mm
• High breakdown voltage(VCBO=1600V).
2174A
• High reliability(Adoption of HVP process).

• Adoption of MBIT process.
5.6
3.4
16.0
• On-chip damper diode.
3.1
2.8
2.

4.2. 2sc5695.pdf Size:411K _toshiba

2SC5695
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5695
Horizontal Deflection Output for High Resolution Display,
Unit: mm
Color TV
• High voltage: VCBO = 1500 V
• Low saturation voltage: V = 3 V (max)
CE (sat)
• High speed: t (2) = 0.1 µs (typ.)
f
Maximum Ratings (Tc =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO

 4.3. 2sc5692.pdf Size:167K _toshiba

2SC5692
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5692
Industrial Applications
High-Speed Switching Applications
Unit: mm
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 400 to 1000 (I = 0.3 A)
C
• Low collector-emitter saturation voltage: V = 0.14 V (max)
CE (sat)
• High-speed switching: t = 120 ns (typ.)
f
Maximum Ratings (

4.4. 2sc5696.pdf Size:29K _sanyo

Ordering number : ENN6663B
2SC5696
NPN Triple Diffused Planar Silicon Transistor
2SC5696
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1600V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
On-chip damper diode.
3.1
2.8
2.0 2.1
0.9
0

 4.5. 2sc5690.pdf Size:28K _sanyo

Ordering number : ENN6896A
2SC5690
NPN Triple Diffused Planar Silicon Transistor
2SC5690
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
On-chip damper diode.
3

4.6. 2sc5694.pdf Size:37K _sanyo

Ordering number : ENN6587
2SA2037 / 2SC5694
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2037 / 2SC5694
DC / DC Converter Applications
Applications
Package Dimensions
Relay drivers, lamp drivers, motor drivers and
unit : mm
printer drivers.
2042B
8.0
[2SA2037 / 2SC5694]
4.0
3.3
1.0 1.0
Features
Adoption of MBIT process.
Large current capacity.
3.0
Low collector-to-

4.7. 2sc5699.pdf Size:28K _sanyo

Ordering number : ENN6665A
2SC5699
NPN Triple Diffused Planar Silicon Transistor
2SC5699
CRT Display Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7
1 2 3
1 : Base
2 :

4.8. 2sc5696.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5696
DESCRIPTION
·High speed switching
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for display horizontal deflection output
Switching regulator and general purpose
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBO

4.9. 2sc5694.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5694
DESCRIPTION
·High speed switching
·Large Current Capacity
·High allowable power dissipation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,lanp drivers,motor drivers and
printer drivers.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

2SC5587 Datasheet (PDF)

1.1. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

 4.3. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
R

4.4. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

 4.5. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.30.1
2.00.2
10
Absolute Maximum Ratings Ta =

4.6. 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.7. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H J

4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

4.9. 2sc5584.pdf Size:186K _inchange_semiconductor

isc Product Specification
isc Silicon NPN Power Transistor 2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc5585.pdf Size:204K _lge

2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Vol

4.11. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipatio

2SC5578 Datasheet (PDF)

1.1. 2sc5578.pdf Size:40K _sanyo

Ordering number:ENN6297
NPN Triple Diffused Planar Silicon Transistor
2SC5578
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1600V).
2048B
High reliability (Adoption of HVP process).

Adoption of MBIT process.
20.0 3.3
5.0
2.0
3.4
0.6
1.2
1 : Base
1 2 3

4.1. 2sc5570.pdf Size:349K _toshiba

2SC5570
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5570
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
C

4.2. 2sc5577.pdf Size:40K _sanyo

Ordering number:ENN6281
NPN Triple Diffused Planar Silicon Transistor
2SC5577
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed (tf=100ns typ).
unit:mm
High breakdown voltage (VCBO=1500V).
2048B
High reliability (Adoption of HVP process).

Adoption of MBIT process.
20.0 3.3
5.0
2.0
3.4
0.6
1.2

 4.3. 2sc5574.pdf Size:52K _rohm

2SC5574
Transistors
Power Transistor (80V, 4A)
2SC5574
Features External dimensions (Units : mm)
1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)
10.0 4.5
2) Excellent DC current gain characteristics.
3.2 2.8
?
3) Pc = 30W (Tc = 25C)
4) Wide SOA (safe operating area).
1.2
1.3
5) Complements the 2SA2017.
0.8
0.75
2.54 2.54 2.6
(1) (2) (3)
( )
(1) (2) (3

4.4. 2sc5576.pdf Size:49K _rohm

2SC5576
Transisitors
Medium Power Transistor
(Motor or Relay drive) (6010V, 4A)
2SC5576
Features Circuit diagram
1) Built-in zener diode between collector and base.
C
2) Strong protection against reverse power surges due to
«L» loads.
B
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
R1 R2
E
B : Base
R1 4.5k?
C : Collector
R2 300?
E : Emitter
Absol

 4.5. 2sc5575.pdf Size:52K _rohm

2SC5575
Transistors
High-voltage Switching Transisitor
(Power Supply) (120V, 7A)
2SC5575
Features
External dimensions (Units : mm)
1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A)
2) Fast switching. (tf : Typ. 0.18s at IC = 5A)
3) Wide SOA. (safe operating area)
10.0 4.5
3.2 2.8
?
Absolute maximum ratings (Ta = 25C)
1.2
1.3
Parameter Symbol Limits Unit
0.8
Collector-base

4.6. 2sc5572.pdf Size:71K _panasonic

2SC5353 Datasheet (PDF)

1.1. 2sc5353.pdf Size:207K _toshiba

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX) * High collectors breakdown voltage: VCEO = 700V 1 TO-220F1

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. 1 1 FEATURES TO-220F1 TO-251 * Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX) * High collectors breakdown voltage:

“>

By :

2SC5681 Datasheet (PDF)

1.1. 2sc5681.pdf Size:28K _sanyo

Ordering number : ENN6607A
2SC5681
NPN Triple Diffused Planar Silicon Transistor
2SC5681
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.1. 2sc5684.pdf Size:126K _toshiba



4.2. 2sc5689.pdf Size:29K _sanyo

Ordering number : ENN6654A
2SC5689
NPN Triple Diffused Planar Silicon Transistor
2SC5689
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
On-chip damper diode. 16.0
3.

 4.3. 2sc5682.pdf Size:28K _sanyo

Ordering number : ENN6608A
2SC5682
NPN Triple Diffused Planar Silicon Transistor
2SC5682
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.4. 2sc5683.pdf Size:28K _sanyo

Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

 4.5. 2sc5680.pdf Size:28K _sanyo

Ordering number : ENN6652A
2SC5680
NPN Triple Diffused Planar Silicon Transistor
2SC5680
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

4.6. 2sc5686.pdf Size:75K _panasonic

Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
15.50.5 3.00.3
? 3.20.1
5?
5?
Features
High breakdown voltage: VCBO ? 2 000 V
High-speed switching: tf 4.7. 2sc5689.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5689
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO

2SC5353B Datasheet (PDF)

1.1. 2sc5353b.pdf Size:251K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5353B NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
1 1
TRANSISTOR
TO-126
TO-126C
DESCRIPTION
1
1
TO-220 TO-220F
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications.
1
1
FEATURES
TO-220F1 TO-251
* Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX)
* High collectors breakdown voltage:

3.1. 2sc5353.pdf Size:207K _toshiba



3.2. 2sc5353.pdf Size:271K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5353 NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR
1
1
TO-126 TO-126C
DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications 1
1
TO-220 TO-220F
FEATURES
* Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX)
* High collectors breakdown voltage: VCEO = 700V
1
TO-220F1

 3.3. 2sc5353.pdf Size:208K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5353
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V = 800V(Min.)
CEO(SUS)
·Low Collector Saturation Voltage
: V =1V(Max) @ I = 1.2A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power

2SC5856 Datasheet (PDF)

1.1. 2sc5856.pdf Size:235K _update

2SC5856
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC S

4.1. 2sc5859.pdf Size:200K _toshiba

2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
HDTV, DIGITAL TV, PROJECTION TV
High Voltage : V = 1700 V
CBO
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 1700 V
Collector-Emi

4.2. 2sc5855.pdf Size:194K _toshiba

2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING

 4.3. 2sc5850.pdf Size:85K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

4.4. 2sc5855.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5855
DESCRIPTION
·High speed switching
·High voltage
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for super high resolution
·Display color TV digital TV
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a