Характеристики транзистора c945

2SC5253 Datasheet (PDF)

4.1. 2sc5255.pdf Size:180K _toshiba

2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.2. 2sc5256ft.pdf Size:104K _toshiba



 4.3. 2sc5257.pdf Size:126K _toshiba



4.4. 2sc5256.pdf Size:164K _toshiba



 4.5. 2sc5259.pdf Size:182K _toshiba



4.6. 2sc5254.pdf Size:177K _toshiba

2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.7. 2sc5258.pdf Size:103K _toshiba



4.8. 2sc5251.pdf Size:35K _hitachi

2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.2 sec (typ)
Isolated package
TO-3PFM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector

4.9. 2sc5252.pdf Size:38K _hitachi

2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf ? 0.15 sec(typ.)
Isolated package
TO3PFM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit

4.10. 2sc5250.pdf Size:71K _hitachi

Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freet

4.11. 2sc5252.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5252
DESCRIPTION
·High speed switching
High breakdown voltage
VCBO = 1500 V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO
V Collector-Emitter Vo

4.12. 2sc5250.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5250
DESCRIPTION
·Silicon NPN diffused planar transistor
·High speed switching
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for display horizontal deflection output
Switching regulator and general purpose
AB

4.13. 2sc5259.pdf Size:1007K _kexin

SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

4.14. 2sc5254.pdf Size:1019K _kexin

SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

3DG2482S Datasheet (PDF)

1.1. 3dg2482s.pdf Size:180K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482S
产品概述 特征参数
产品特点
3DG2482S 是硅 NPN 型 ● 开关损耗低 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
功率开关晶体管，
该产品采
● 高温特性好
IC 0.35 A
用平面工艺，
分压环终端结
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
构和少

3.1. 3dg2482h a1.pdf Size:182K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482H A1
产品概述 特征参数
产品特点
● 开关损耗低
3DG2482H A1 是 硅 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
NPN 型功率开关晶体管，该
● 高温特性好
IC 0.45 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
终端结

3.2. 3dg2482ha1.pdf Size:182K _china

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482H A1
产品概述 特征参数
产品特点
● 开关损耗低
3DG2482H A1 是 硅 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
NPN 型功率开关晶体管，该
● 高温特性好
IC 0.45 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
终端结

 3.3. 3dg2482.pdf Size:210K _china

2SC2482(3DG2482) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途: 用于高压开关和放大,彩电行激励及色度信号输出。
Purpose: High voltage switching and amplifier, color TV horiz driver, chroma
output applications.
特点: 耐压高,集电极输出电容小。
Features: High voltage, small collector output capacitance.
极限参数/Absolute maximum ratings(

2SC4744 Datasheet (PDF)

1.1. 2sc4744.pdf Size:378K _hitachi

1.2. 2sc4744.pdf Size:221K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4744
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·Built-in Damper Diode
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE

 4.1. 2sc4742.pdf Size:32K _hitachi

2SC4742
Silicon NPN Triple Diffused
Application
Character display horizontal deflection output
Feature
High breakdown voltage
VCES = 1500 V
Built-in damper diode type
Outline
TO-3P
2
1
1. Base
ID
2. Collector
(Flange)
3. Emitter
1
3
2
3
2SC4742
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to emitter voltage VCES 1500 V
Emitter to base vol

4.2. 2sc4747.pdf Size:32K _hitachi

2SC4747
Silicon NPN Triple Diffused
Application
Character display horizontal deflection output
Feature
High breakdown voltage
VCBO = 1500 V
High speed switching
tf ? 0.3 s
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC4747
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 1500 V
Collector to emitter voltage VCEO 800

 4.3. 2sc4745.pdf Size:299K _hitachi

2SC4745
Silicon NPN Triple Diffused
Character Display Horizontal Deflection Output
Feature
TO-3PFM
High speed switching
tf = 0.2 s typ
High breakdown voltage
VCBO = 1500 V
Isolated package; TO-3PFM
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Rating Unit
1
2
3
1. Base

2. Collector
Collector to base voltage VCBO 1500 V
3. Emitter

4.4. 2sc4742.pdf Size:107K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC4742
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High breakdown voltage
APPLICATIONS
·Character display horizontal
deflection output
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings

 4.5. 2sc4747.pdf Size:90K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC4747
DESCRIPTION
·With TO-3PFM package
·High speed switching
·High breakdown voltage
APPLICATIONS
·Character display horizontal deflection
output
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDI

4.6. 2sc4743.pdf Size:187K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4743
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.7. 2sc4746.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4746
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

4.8. 2sc4742.pdf Size:186K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4742
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CES
·Built-in Damper Diode
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃

4.9. 2sc4747.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4747
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc4745.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4745
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)

Биполярный транзистор 2SC4706 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4706

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 130
W

Макcимально допустимое напряжение коллектор-база (Ucb): 900
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V

Макcимальный постоянный ток коллектора (Ic): 14
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 6
MHz

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO3P

2SC4706
Datasheet (PDF)

1.1. 2sc4706.pdf Size:190K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC4706
DESCRIPTION
·With TO-3PN package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=?)
SYMBO

1.2. 2sc4706.pdf Size:23K _sanken-ele

2SC4706
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit
0.2
4.8
0.4
15.6
VCBO 900 V ICBO VCB=800V 100max A 0.1
9.6 2.0
VCEO 600 V IEBO VEB

 1.3. 2sc4706.pdf Size:218K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4706
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 600V(Min)
(BR)CEO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

2SC4770 Datasheet (PDF)

1.1. 2sc4770.pdf Size:98K _sanyo

Ordering number:EN3666A
NPN Triple Diffused Planar Silicon Transistor
2SC4770
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed (tf=100ns typ).
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
3.1
2.8
2.0 2.0

1.2. 2sc4770.pdf Size:51K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC4770
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
APPLICATIONS
·Ultrahigh-definition color display
·Horizontal deflection output applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolut

 1.3. 2sc4770.pdf Size:194K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4770
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition color display horizontal deflection
output applications
ABSOLUTE MAXI

2SC4139 Datasheet (PDF)

1.1. 2sc4139.pdf Size:190K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC4139
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=?)

1.2. 2sc4139.pdf Size:25K _sanken-ele

2SC4139
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Symbol 2SC4139 Symbol Conditions 2SC4139 Unit
Unit
0.2
4.8
0.4
15.6
0.1
9.6 2.0
VCBO 500 ICBO VCB=500V 100max A
V
VC

 1.3. 2sc4139.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4139
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER

3DG2482H_A1 Datasheet (PDF)

1.1. 3dg2482h a1.pdf Size:182K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482H A1
产品概述 特征参数
产品特点
● 开关损耗低
3DG2482H A1 是 硅 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
NPN 型功率开关晶体管，该
● 高温特性好
IC 0.45 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
终端结

2.1. 3dg2482ha1.pdf Size:182K _china

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482H A1
产品概述 特征参数
产品特点
● 开关损耗低
3DG2482H A1 是 硅 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
NPN 型功率开关晶体管，该
● 高温特性好
IC 0.45 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
终端结

 3.1. 3dg2482s.pdf Size:180K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482S
产品概述 特征参数
产品特点
3DG2482S 是硅 NPN 型 ● 开关损耗低 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
功率开关晶体管，
该产品采
● 高温特性好
IC 0.35 A
用平面工艺，
分压环终端结
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
构和少

3.2. 3dg2482.pdf Size:210K _china

2SC2482(3DG2482) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途: 用于高压开关和放大,彩电行激励及色度信号输出。
Purpose: High voltage switching and amplifier, color TV horiz driver, chroma
output applications.
特点: 耐压高,集电极输出电容小。
Features: High voltage, small collector output capacitance.
极限参数/Absolute maximum ratings(

2SC6042 Datasheet (PDF)

1.1. 2sc6042.pdf Size:182K _toshiba

2SC6042
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications
Unit: mm
Switching Regulator Applications
DC-DC Converter Applications
• High-speed switching: tf = 0.2 ?s (max) (IC = 0.3A)
• High breakdown voltage: VCES = 800 V, VCEO = 375 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collec

4.1. 2sc6046.pdf Size:138K _update

2SC6046
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
Unit：mm
OUTLINE DRAWING
2SC6046 is a silicon NPN epitaxial type transistor designed with
high collector current, low VCE（sat）.
2.8
0.65 1.5 0.65
FEATURE
①
●High collector current
IC（MAX）=600mA
②
③
●Low collector to emitter saturation voltage
VCE（sa

4.2. 2sc6040.pdf Size:182K _toshiba

2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications
Unit: mm
Switching Regulator Applications
DC-DC Converter Applications
• High-speed switching: tf = 0.2 ?s (max) (IC = 0.3 A)
• High breakdown voltage: VCES = 800 V, VCEO = 410 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Co

 4.3. 2sc6044.pdf Size:36K _sanyo

Ordering number : ENN8251 2SC6044
NPN Epitaxial Planar Silicon Transistors
2SC6044
High-Current Switching Applications
Applications
• Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
• Adoption of MBIT process.
• Low collector-to-emitter saturation voltage.
• High current capacity.
• High-speed switching.
Specifications
Absolute M

4.4. 2sc6043.pdf Size:248K _sanyo

Ordering number : ENN8326 2SC6043
NPN Epitaxial Planar Silicon Transistors
2SC6043
High-Current Switching Applications
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=2

Биполярный транзистор 2SC3973B — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3973B

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 45
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8
V

Макcимальный постоянный ток коллектора (Ic): 7
A

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO220Fa

2SC3973B
Datasheet (PDF)

1.1. 2sc3973b.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3973B

DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High voltage,high speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high voltage,high speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION

Ў

3.1. 2sc3973.pdf Size:60K _panasonic

Power Transistors
2SC3973, 2SC3973A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
10.0 0.2 4.2 0.2
Features
5.5 0.2 2.7 0.2
High-speed switching
High collector to base voltage VCBO
? 3.1 0.1
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
Full-pack package which can be installed to t

3.2. 2sc3973.pdf Size:179K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC3973 2SC3973A
DESCRIPTION ·
·With TO-220Fa package
·High breakdown voltage
·High speed switching
·Wide area of safe operation
APPLICATIONS
·For high breakdown voltate ,high-speed
switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter
Absol

 3.3. 2sc3973.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3973
DESCRIPTION ·
·Collector-Base Breakdown Voltage-
: V = 800V(Min.)
(BR)CBO
·Wide Area of Safe Operation
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

3.4. 2sc3973 2sc3973a.pdf Size:142K _inchange_semiconductor

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors
DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high breakdown voltate ,high-speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter

2SC3973 2SC3973A
Ў¤

Fig.1 simplified outline (TO-

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Биполярный транзистор 3DG2482S — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 3DG2482S

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.8
W

Макcимально допустимое напряжение коллектор-база (Ucb): 600
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 0.25
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 5
MHz

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO92

3DG2482S
Datasheet (PDF)

1.1. 3dg2482s.pdf Size:180K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482S
产品概述 特征参数
产品特点
3DG2482S 是硅 NPN 型 ● 开关损耗低 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
功率开关晶体管，
该产品采
● 高温特性好
IC 0.35 A
用平面工艺，
分压环终端结
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
构和少

3.1. 3dg2482h a1.pdf Size:182K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482H A1
产品概述 特征参数
产品特点
● 开关损耗低
3DG2482H A1 是 硅 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
NPN 型功率开关晶体管，该
● 高温特性好
IC 0.45 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
终端结

3.2. 3dg2482ha1.pdf Size:182K _china

硅三重扩散 NPN 双极型晶体管
R
○
3DG2482H A1
产品概述 特征参数
产品特点
● 开关损耗低
3DG2482H A1 是 硅 符 号 额定值 单 位
● 反向漏电流小
VCEO 400 V
NPN 型功率开关晶体管，该
● 高温特性好
IC 0.45 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot （Ta=25℃） 0.8 W
终端结

 3.3. 3dg2482.pdf Size:210K _china

2SC2482(3DG2482) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途: 用于高压开关和放大,彩电行激励及色度信号输出。
Purpose: High voltage switching and amplifier, color TV horiz driver, chroma
output applications.
特点: 耐压高,集电极输出电容小。
Features: High voltage, small collector output capacitance.
极限参数/Absolute maximum ratings(

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.