Типы МОП-транзистора (MOSFET)

На основе режима эксплуатации МОП-транзисторы можно разделить на два типа.

• Режим насыщения
• Режим истощения

Режим насыщения

В этом режиме отсутствует проводимость при нулевом напряжении, что означает, что оно по умолчанию закрыто или «ВЫКЛ», так как канал отсутствует. Когда напряжение затвора увеличивается больше, чем напряжение источника, носители заряда (дырки) смещаются, оставляя позади электроны, и, таким образом, устанавливается более широкий канал.

Напряжение на затворе прямо пропорционально току, то есть с увеличением напряжения на затворе ток увеличивается и наоборот.

Классификация режима насыщения МОП- транзисторов

Усовершенствованные МОП-транзисторы можно классифицировать на два типа в зависимости от типа используемого легированного субстрата (n-типа или p-типа).

• N-канальный тип насыщения MOSFET
• P-канальный тип насыщения MOSFET

N-канальный тип насыщения MOSFET

• Слегка легированная субстрат P-типа образует корпус устройства, а исток и сток сильно легированы примесями N-типа.
• N-канал имеет электроны в качестве основных носителей.
• Подаваемое напряжение затвора положительно для включения устройства.
• Он имеет более низкую собственную емкость и меньшую площадь соединения из-за высокой подвижности электронов, что позволяет ему работать на высоких скоростях переключения.
• Он содержит положительно заряженные примеси, что делает преждевременным включение полевых МОП-транзисторов с N-каналом.
• Сопротивление дренажу низкое по сравнению с P-типом.

P-канальный тип насыщения MOSFET

• Слегка легированная подложка N-типа образует корпус устройства, а исток и сток сильно легированы примесями P-типа.
• P-канал имеет отверстия в качестве основных носителей.
• Он имеет более высокую внутреннюю емкость и малую подвижность отверстий, что делает его работающим при низкой скорости переключения по сравнению с N-типом.
• Подаваемое напряжение затвора является отрицательным для включения устройства.
• Водостойкость выше по сравнению с N-типом.

Режим истощения

В этом типе канал уже установлен, и очевидно, что проводимость происходит даже при нулевом напряжении, и он открыт или включен по умолчанию. В отличие от типа насыщения, здесь канал лишен носителей заряда, чтобы уменьшить ширину канала.

Напряжение на затворе обратно пропорционально току, т. Е. С увеличением напряжения на затворе ток уменьшается.

Классификация режима истощения МОП-транзисторов

Истощающие МОП-транзисторы могут быть классифицированы на два типа в зависимости от типа используемого легированного субстрата (n-типа или p-типа).

• Тип истощения канала N МОП-транзистор
• Тип истощения канала P МОП-транзистор

Тип истощения канала N МОП-транзистор

• Полупроводник P-типа образует подложку, а исток и сток сильно легированы примесями N-типа.
• Применяемое напряжение на затворе отрицательное.
• Канал обеднен свободными электронами.

Тип канала истощения канала MOSFET

• Полупроводник N-типа образует подложку, а исток и сток сильно легированы примесями N-типа.
• Поданное напряжение затвора положительное.
• Канал обеднен свободными отверстиями.

IRLZ34N Datasheet (PDF)

1.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd

PD — 95583
IRLZ34NSPbF
IRLZ34NLPbF
l Logic-Level Gate Drive HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRLZ34NS)
VDSS = 55V
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
RDS(on) = 0.035Ω
l Fast Switching
G
l Fully Avalanche Rated
ID = 30A
l Lead-Free
S
Description
Fifth Generation HEXFETs from International Rectifier
utiliz

1.2. irlz34npbf.pdf Size:225K _upd

PD — 94830
IRLZ34NPbF
HEXFET Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.035Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest

 1.3. irlz34n 1.pdf Size:51K _philips

Philips Semiconductors Product specification
N-channel enhancement mode IRLZ34N
Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using trench VDS Drain-source voltage 55 V
technology. The device features very ID Drain current (DC) 30 A
low on

1.4. irlz34ns.pdf Size:180K _international_rectifier

PD — 91308A
IRLZ34NS/L
HEXFET Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRLZ34NS)
Low-profile through-hole (IRLZ34NL)
175C Operating Temperature
RDS(on) = 0.035?
Fast Switching
G
Fully Avalanche Rated
ID = 30A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to ach

 1.5. irlz34n.pdf Size:104K _international_rectifier

PD — 9.1307B
IRLZ34N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Advanced Process Technology
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.035?
Fast Switching
G
Fully Avalanche Rated
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per

1.6. irlz34n 1.pdf Size:51K _international_rectifier

Philips Semiconductors Product specification
N-channel enhancement mode IRLZ34N
Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using trench VDS Drain-source voltage 55 V
technology. The device features very ID Drain current (DC) 30 A
low on

1.7. irlz34n.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRLZ34N， IIRLZ34N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤35mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R

IRF9Z34N Datasheet (PDF)

1.1. irf9z34npbf.pdf Size:240K _upd-mosfet


IRF9Z34NPbF

l Advanced Process Technology
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature

l Fast Switching
l P-Channel
Ω
l Fully Avalanche Rated G
l Lead-Free

Description S

1.2. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _upd-mosfet

PD- 95769
IRF9Z34NSPbF
IRF9Z34NLPbF
• Lead-Free
www.irf.com 1
04/25/05
IRF9Z34NS/LPbF
2 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 3
IRF9Z34NS/LPbF
4 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 5
IRF9Z34NS/LPbF
6 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 7
IRF9Z34NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS

 1.3. irf9z34n.pdf Size:108K _international_rectifier

PD — 9.1485B
IRF9Z34N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.10?
P-Channel
G
Fully Avalanche Rated
ID = -19A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

1.4. irf9z34ns.pdf Size:162K _international_rectifier

PD — 9.1525
IRF9Z34NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z34NS)
VDSS = -55V
Low-profile through-hole (IRF9Z34NL)
175C Operating Temperature
RDS(on) = 0.10?
Fast Switching
G
P-Channel
ID = -19A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ext

 1.5. irf9z34n.pdf Size:242K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.1Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
relia

SFP9Z34 Datasheet (PDF)

1.1. sfp9z34.pdf Size:507K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = -60 V
Avalanche Rugged Technology
RDS(on) = 0.14
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -18 A
Improved Gate Charge
175oC Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10 A (Max.) @ VDS = -60V
Low RDS(ON) : 0.106 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Sy

5.1. sfp9z24.pdf Size:505K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = -60 V
Avalanche Rugged Technology
RDS(on) = 0.28
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -9.7 A
Improved Gate Charge
175oC Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10 A (Max.) @ VDS = -60V
Low RDS(ON) : 0.206 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
S

5.2. sfp9z14.pdf Size:494K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = -60 V
Avalanche Rugged Technology
RDS(on) = 0.5
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -6.7 A
Improved Gate Charge
175oC Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10 A (Max.) @ VDS = -60V
Low RDS(ON) : 0.362 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Sy

IRFZ34N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ34N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 56
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 26
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 22.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.04
Ohm

Тип корпуса: TO220AB

IRFZ34N
Datasheet (PDF)

1.1. irfz34npbf.pdf Size:179K _update

PD — 94807
IRFZ34NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 0.040Ω
Fast Switching
G
Ease of Paralleling
ID = 29A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible o

1.2. irfz34nlpbf irfz34nspbf.pdf Size:296K _update

PD — 95571
IRFZ34NSPbF
IRFZ34NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL) D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.040Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing tech

 1.3. irfz34n.pdf Size:104K _international_rectifier

PD -9.1276C
IRFZ34N
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.040?
Fast Switching
G
Ease of Paralleling
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per si

1.4. irfz34ns.pdf Size:161K _international_rectifier

PD — 9.1311A
IRFZ34NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ34NS)
Low-profile through-hole (IRFZ34NL)
175C Operating Temperature RDS(on) = 0.040?
Fast Switching
G
Fully Avalanche Rated
ID = 29A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-re

 1.5. irfz34ns.pdf Size:258K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ34NS
·FEATURES
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

Другие MOSFET… IRFZ24NL
, IRFZ24NS
, IRFZ25
, IRFZ30
, IRFZ32
, IRFZ34
, IRFZ34A
, IRFZ34E
, APT50M38JLL
, IRFZ34NL
, IRFZ34NS
, IRFZ35
, IRFZ40
, IRFZ40FI
, IRFZ42
, IRFZ44
, IRFZ44A
.

IRLZ34N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLZ34N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 56
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Максимально допустимый постоянный ток стока (Id): 27
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 16.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.035
Ohm

Тип корпуса: TO220AB

IRLZ34N
Datasheet (PDF)

1.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd

PD — 95583
IRLZ34NSPbF
IRLZ34NLPbF
l Logic-Level Gate Drive HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRLZ34NS)
VDSS = 55V
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
RDS(on) = 0.035Ω
l Fast Switching
G
l Fully Avalanche Rated
ID = 30A
l Lead-Free
S
Description
Fifth Generation HEXFETs from International Rectifier
utiliz

1.2. irlz34npbf.pdf Size:225K _upd

PD — 94830
IRLZ34NPbF
HEXFET Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.035Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest

 1.3. irlz34n 1.pdf Size:51K _philips

Philips Semiconductors Product specification
N-channel enhancement mode IRLZ34N
Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using trench VDS Drain-source voltage 55 V
technology. The device features very ID Drain current (DC) 30 A
low on

1.4. irlz34ns.pdf Size:180K _international_rectifier

PD — 91308A
IRLZ34NS/L
HEXFET Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRLZ34NS)
Low-profile through-hole (IRLZ34NL)
175C Operating Temperature
RDS(on) = 0.035?
Fast Switching
G
Fully Avalanche Rated
ID = 30A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to ach

 1.5. irlz34n.pdf Size:104K _international_rectifier

PD — 9.1307B
IRLZ34N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Advanced Process Technology
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.035?
Fast Switching
G
Fully Avalanche Rated
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per

1.6. irlz34n 1.pdf Size:51K _international_rectifier

Philips Semiconductors Product specification
N-channel enhancement mode IRLZ34N
Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using trench VDS Drain-source voltage 55 V
technology. The device features very ID Drain current (DC) 30 A
low on

1.7. irlz34n.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRLZ34N， IIRLZ34N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤35mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R

Другие MOSFET… IRLZ24
, IRLZ24A
, IRLZ24N
, IRLZ24NL
, IRLZ24NS
, IRLZ30
, IRLZ34
, IRLZ34A
, STF5N52U
, IRLZ34NL
, IRLZ34NS
, IRLZ40
, IRLZ44
, IRLZ44A
, IRLZ44N
, IRLZ44NL
, IRLZ44NS
.

IRF9Z34NS Datasheet (PDF)

1.1. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _upd-mosfet

PD- 95769
IRF9Z34NSPbF
IRF9Z34NLPbF
• Lead-Free
www.irf.com 1
04/25/05
IRF9Z34NS/LPbF
2 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 3
IRF9Z34NS/LPbF
4 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 5
IRF9Z34NS/LPbF
6 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 7
IRF9Z34NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS

1.2. irf9z34ns.pdf Size:162K _international_rectifier

PD — 9.1525
IRF9Z34NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z34NS)
VDSS = -55V
Low-profile through-hole (IRF9Z34NL)
175C Operating Temperature
RDS(on) = 0.10?
Fast Switching
G
P-Channel
ID = -19A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ext

 2.1. irf9z34npbf.pdf Size:240K _upd-mosfet


IRF9Z34NPbF

l Advanced Process Technology
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature

l Fast Switching
l P-Channel
Ω
l Fully Avalanche Rated G
l Lead-Free

Description S

2.2. irf9z34n.pdf Size:108K _international_rectifier

PD — 9.1485B
IRF9Z34N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.10?
P-Channel
G
Fully Avalanche Rated
ID = -19A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

 2.3. irf9z34n.pdf Size:242K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.1Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
relia

IRFI9Z34N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFI9Z34N

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 37
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 14
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm

Тип корпуса: TO220

IRFI9Z34N
Datasheet (PDF)

1.1. irfi9z34n.pdf Size:120K _international_rectifier

PD — 9.1530A
IRFI9Z34N
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = -55V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.10?
P-Channel
G
Fully Avalanche Rated
ID = -14A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

2.1. irfi9z34g-pbf.pdf Size:1417K _upd

IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) — 60
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RDS(on) (Ω)VGS = — 10 V 0.14
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 34 COMPLIANT
• P-Channel
Qgs (nC) 9.9
• 175 °C Operating Temperature
Qgd (nC) 16
• Dynamic dV/

2.2. irfi9z34g.pdf Size:911K _international_rectifier

PD — 94866
IRFI9Z34GPbF
Lead-Free
12/04/03
Document Number: 91172 www.vishay.com
1
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
2
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
3
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
4
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
5
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
6
IRFI9Z34GPbF
TO-220 Fu

 2.3. irfi9z34g sihfi9z34g.pdf Size:1415K _vishay

IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
VDS (V) — 60
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RDS(on) (?)VGS = — 10 V 0.14
RoHS*
Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 34 COMPLIANT
P-Channel
Qgs (nC) 9.9
175 C Operating Temperature
Qgd (nC) 16
Dynamic dV/dt Rating
Config

Другие MOSFET… IRFI9520N
, IRFI9530G
, IRFI9540N
, IRFI9620G
, IRFI9630G
, IRFI9634G
, IRFI9640G
, IRFI9Z24N
, IRF3205
, IRFIB5N65A
, IRFIB6N60A
, IRFIB7N50A
, IRFIBC20G
, IRFIBC30G
, IRFIBC40G
, IRFIBC40GLC
, IRFIBE20G
.

IRFI9Z34N Datasheet (PDF)

1.1. irfi9z34n.pdf Size:120K _international_rectifier

PD — 9.1530A
IRFI9Z34N
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = -55V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.10?
P-Channel
G
Fully Avalanche Rated
ID = -14A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

2.1. irfi9z34g-pbf.pdf Size:1417K _upd

IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) — 60
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RDS(on) (Ω)VGS = — 10 V 0.14
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 34 COMPLIANT
• P-Channel
Qgs (nC) 9.9
• 175 °C Operating Temperature
Qgd (nC) 16
• Dynamic dV/

2.2. irfi9z34g.pdf Size:911K _international_rectifier

PD — 94866
IRFI9Z34GPbF
Lead-Free
12/04/03
Document Number: 91172 www.vishay.com
1
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
2
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
3
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
4
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
5
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
6
IRFI9Z34GPbF
TO-220 Fu

 2.3. irfi9z34g sihfi9z34g.pdf Size:1415K _vishay

IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
VDS (V) — 60
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RDS(on) (?)VGS = — 10 V 0.14
RoHS*
Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 34 COMPLIANT
P-Channel
Qgs (nC) 9.9
175 C Operating Temperature
Qgd (nC) 16
Dynamic dV/dt Rating
Config

SFP9Z34 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SFP9Z34

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 82
W

Предельно допустимое напряжение сток-исток (Uds): 60
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 18
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 38
nC

Выходная емкость (Cd): 890
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.14
Ohm

Тип корпуса: TO220

SFP9Z34
Datasheet (PDF)

1.1. sfp9z34.pdf Size:507K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = -60 V
Avalanche Rugged Technology
RDS(on) = 0.14
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -18 A
Improved Gate Charge
175oC Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10 A (Max.) @ VDS = -60V
Low RDS(ON) : 0.106 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Sy

5.1. sfp9z24.pdf Size:505K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = -60 V
Avalanche Rugged Technology
RDS(on) = 0.28
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -9.7 A
Improved Gate Charge
175oC Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10 A (Max.) @ VDS = -60V
Low RDS(ON) : 0.206 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
S

5.2. sfp9z14.pdf Size:494K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = -60 V
Avalanche Rugged Technology
RDS(on) = 0.5
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = -6.7 A
Improved Gate Charge
175oC Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10 A (Max.) @ VDS = -60V
Low RDS(ON) : 0.362 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Sy

Другие MOSFET… SFP9620
, SFP9624
, SFP9630
, SFP9634
, SFP9640
, SFP9644
, SFP9Z14
, SFP9Z24
, IRF9540N
, SFR2955
, SFR9014
, SFR9024
, SFR9034
, SFR9110
, SFR9120
, SFR9130
, SFR9210
.

IRFZ34N Datasheet (PDF)

1.1. irfz34npbf.pdf Size:179K _update

PD — 94807
IRFZ34NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 0.040Ω
Fast Switching
G
Ease of Paralleling
ID = 29A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible o

1.2. irfz34nlpbf irfz34nspbf.pdf Size:296K _update

PD — 95571
IRFZ34NSPbF
IRFZ34NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL) D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.040Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing tech

 1.3. irfz34n.pdf Size:104K _international_rectifier

PD -9.1276C
IRFZ34N
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.040?
Fast Switching
G
Ease of Paralleling
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per si

1.4. irfz34ns.pdf Size:161K _international_rectifier

PD — 9.1311A
IRFZ34NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ34NS)
Low-profile through-hole (IRFZ34NL)
175C Operating Temperature RDS(on) = 0.040?
Fast Switching
G
Fully Avalanche Rated
ID = 29A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-re

 1.5. irfz34ns.pdf Size:258K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ34NS
·FEATURES
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

IRFZ24N Datasheet (PDF)

1.1. irfz24npbf.pdf Size:242K _update


IRFZ24NPbF

l Advanced Process Technology
D
l Dynamic dv/dt Rating
l 175°C Operating Temperature DSS
l Fast Switching
l Fully Avalanche Rated
DS(on) Ω
G
l Lead-Free
Description
D
S
Fifth Generation HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-res

1.2. irfz24nspbf.pdf Size:672K _update

PD — 95147
IRFZ24NS/LPbF
HEXFET Power MOSFET
Advanced Process Technology
Surface Mount (IRFZ24NS)
D
VDSS = 55V
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
RDS(on) = 0.07Ω
Fast Switching
G
Fully Avalanche Rated
Lead-Free ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve

 1.3. irfz24nlpbf.pdf Size:675K _update-mosfet

PD — 95147
IRFZ24NS/LPbF
HEXFET Power MOSFET
Advanced Process Technology
Surface Mount (IRFZ24NS)
D
VDSS = 55V
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
RDS(on) = 0.07Ω
Fast Switching
G
Fully Avalanche Rated
Lead-Free ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve

1.4. irfz24n 1.pdf Size:53K _philips

Philips Semiconductors Product specification
N-channel enhancement mode IRFZ24N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 17 A
features very low on-state re

 1.5. irfz24n.pdf Size:123K _international_rectifier

PD — 91354A
IRFZ24N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = 55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.07?
Fully Avalanche Rated
G
Description
ID = 17A
S
Fifth Generation HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area

1.6. irfz24n 1.pdf Size:53K _international_rectifier

Philips Semiconductors Product specification
N-channel enhancement mode IRFZ24N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 17 A
features very low on-state re

1.7. irfz24ns.pdf Size:159K _international_rectifier

PD — 9.1355B
IRFZ24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ24NS)
Low-profile through-hole (IRFZ24NL)
175C Operating Temperature RDS(on) = 0.07?
Fast Switching
G
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-res

1.8. irfz24nlpbf.pdf Size:214K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ24NLPbF
·FEATURES
·With TO-262(DPAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.9. irfz24nspbf.pdf Size:203K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ24NSPbF
·FEATURES
·With TO-263(D2PAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol