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Datasheet international rectifier irf5305strlpbf

Содержание

1 IRF5305 Datasheet (PDF)
2 IRFR5305 Datasheet (PDF)
3 IRF5305PBF Datasheet (PDF)
4 Datasheets
5 IRF530NS Datasheet (PDF)
6 IRF5305S Datasheet (PDF)
7 IRF5305L Datasheet (PDF)

IRF5305 Datasheet (PDF)

1.1. irf5305.pdf Size:124K _international_rectifier

PD — 91385B
IRF5305
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.06?
P-Channel
G
Fully Avalanche Rated
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

1.2. irf5305pbf.pdf Size:182K _international_rectifier

PD — 94788
IRF5305PbF
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.06Ω
P-Channel
G
Fully Avalanche Rated
ID = -31A
Lead-Free
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance pe

1.3. irf5305s.pdf Size:171K _international_rectifier

PD — 91386C
IRF5305S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF5305S)
VDSS = -55V
Low-profile through-hole (IRF5305L)
175C Operating Temperature
RDS(on) = 0.06?
Fast Switching
G
P-Channel
ID = -31A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extrem

1.4. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

PD — 95957
IRF5305S/LPbF
• Lead-Free
www.irf.com 1
4/21/05
IRF5305S/LPbF
2 www.irf.com
IRF5305S/LPbF
www.irf.com 3
IRF5305S/LPbF
4 www.irf.com
IRF5305S/LPbF
www.irf.com 5
IRF5305S/LPbF
6 www.irf.com
IRF5305S/LPbF
www.irf.com 7
IRF5305S/LPbF
D2Pak Package Outline
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
PART NUMBER
LOT CODE 8024
INTERNATIONAL
ASSE

1.5. irf5305.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF5305,IIRF5305
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.06Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliab

IRFR5305 Datasheet (PDF)

Datasheet stmicroelectronics irf530

1.1. irfr5305pbf.pdf Size:250K _upd

PD-95025A
IRFR5305PbF
IRFU5305PbF
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
D
l Straight Lead (IRFU5305) VDSS = -55V
l Advanced Process Technology
l Fast Switching
RDS(on) = 0.065Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achie

1.2. auirfr5305tr.pdf Size:300K _international_rectifier

PD-96341
AUTOMOTIVE MOSFET
AUIRFR5305
AUIRFU5305
HEXFET Power MOSFET
D
Features
V(BR)DSS
-55V
Advanced Planar Technology
Low On-Resistance
RDS(on) max.
0.065Ω
Dynamic dV/dT Rating G
175°C Operating Temperature
Fast Switching S ID -31A
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant D
D
Automotive Qualified *
S
Descri

1.3. irfr5305.pdf Size:156K _international_rectifier

PD — 91402A
IRFR/U5305
HEXFET Power MOSFET
Ultra Low On-Resistance
D
Surface Mount (IRFR5305)
VDSS = -55V
Straight Lead (IRFU5305)
Advanced Process Technology
RDS(on) = 0.065?
Fast Switching
G
Fully Avalanche Rated
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per

1.4. irfr5305.pdf Size:285K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRFR5305
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤65mΩ(@V = -10V; I = -16A)
GS D
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE

IRF5305PBF Datasheet (PDF)

1.1. irf5305pbf.pdf Size:182K _international_rectifier

3.1. irf5305.pdf Size:124K _international_rectifier

3.2. irf5305s.pdf Size:171K _international_rectifier

3.3. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

3.4. irf5305.pdf Size:241K _inchange_semiconductor

Datasheets

Транзистор irf540

Datasheet

PDF, 181 Кб

Выписка из документа

PD — 91386C IRF5305S/LHEXFET Power MOSFETAdvanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Descriptionl l D VDSS = -55V RDS(on) = 0.06 G ID = -31AS Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum RatingsParameterID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.-31 -22 -110 3.8 110 0.71 ± 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) UnitsA W W W/°C V mJ A mJ V/ns °C Thermal ResistanceParameterRJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max.1.4 40 Units°C/W 4/1/99 IRF5305S/LElectrical Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain («Miller») Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 -2.0 8.0 …

IRF530NS Datasheet (PDF)

Транзистор irf640

1.1. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

1.2. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

1.3. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt