Транзистор irf640

IRF640NPBF Datasheet (PDF)

1.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _upd-mosfet

PD — 95046A
IRF640NPbF
IRF640NSPbF
l Advanced Process Technology IRF640NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements RDS(on) = 0.15Ω
G
l Lead-Free
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectif

3.1. irf640n.pdf Size:155K _international_rectifier

PD — 94006
IRF640N
IRF640NS
IRF640NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
D
175C Operating Temperature
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.15?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from S
International Rectifier utilize advanced processing
tech

3.2. irf640n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF640N，IIRF640N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤150mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T

IRF640S Datasheet (PDF)

1.1. irf640lpbf irf640spbf.pdf Size:196K _upd-mosfet

IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 200
• Surface Mount
RDS(on) ()VGS = 10 V 0.18
• Low-Profile Through-Hole
Qg (Max.) (nC) 70
• Available in Tape and Reel
Qgs (nC) 13
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
Qgd (nC) 39
• Fast Swi

1.2. irf640s.pdf Size:228K _international_rectifier

PD -90902B
IRF640S/L
HEXFET Power MOSFET
Surface Mount (IRF640S)
D
Low-profile through-hole (IRF640L)
VDSS = 200V
Available in Tape & Reel (IRF640S)
Dynamic dv/dt Rating
RDS(on) = 0.18Ω
150°C Operating Temperature
G
Fast Switching
ID = 18A
Fully Avalanche Rated
S
Description
Third Generation HEXFETs from International Rectifier provide
the designer with the best co

 1.3. irf640s-l.pdf Size:935K _international_rectifier

PD — 95113
IRF640S/LPbF
Lead-Free
3/16/04
Document Number: 91037 www.vishay.com
1
IRF640S/LPbF
Document Number: 91037 www.vishay.com
2
IRF640S/LPbF
Document Number: 91037 www.vishay.com
3
IRF640S/LPbF
Document Number: 91037 www.vishay.com
4
IRF640S/LPbF
Document Number: 91037 www.vishay.com
5
IRF640S/LPbF
Document Number: 91037 www.vishay.com
6
IRF640S/LPbF
Document N

IRL640 Datasheet (PDF)

1.1. irl640spbf.pdf Size:986K _upd

PD- 95585
IRL640SPbF
• Lead-Free
07/20/04
Document Number: 91306 www.vishay.com
1
IRL640SPbF
Document Number: 91306 www.vishay.com
2
IRL640SPbF
Document Number: 91306 www.vishay.com
3
IRL640SPbF
Document Number: 91306 www.vishay.com
4
IRL640SPbF
Document Number: 91306 www.vishay.com
5
IRL640SPbF
Document Number: 91306 www.vishay.com
6
IRL640SPbF
Peak Diode Recovery

1.2. irl640pbf.pdf Size:1708K _upd

IRL640, SiHL640
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 200
Available
• Repetitive Avalanche Rated
RDS(on) (Ω)VGS = 5.0 V 0.18
RoHS*
• Logic-Level Gate Drive
COMPLIANT
Qg (Max.) (nC) 66
• RDS(on) Specified at VGS = 4 V and 5 V
Qgs (nC) 9.0
• Fast Switching
Qgd (nC) 38
• Ease of Paralleling
Configuration Single
• Si

 1.3. irl640a.pdf Size:226K _fairchild_semi

IRL640A
FEATURES
BVDSS = 200 V
Logic-Level Gate Drive
RDS(on) = 0.18?
Avalanche Rugged Technology
Rugged Gate Oxide Technology
ID = 18 A
Lower Input Capacitance
Improved Gate Charge
TO-220
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ VDS = 200V
Lower RDS(ON): 0.145? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Chara

1.4. irl640s.pdf Size:263K _international_rectifier

 1.5. irl640spbf.pdf Size:986K _international_rectifier

PD- 95585
IRL640SPbF
Lead-Free
07/20/04
Document Number: 91306 www.vishay.com
1
IRL640SPbF
Document Number: 91306 www.vishay.com
2
IRL640SPbF
Document Number: 91306 www.vishay.com
3
IRL640SPbF
Document Number: 91306 www.vishay.com
4
IRL640SPbF
Document Number: 91306 www.vishay.com
5
IRL640SPbF
Document Number: 91306 www.vishay.com
6
IRL640SPbF
Peak Diode Recovery dv/d

1.6. irl640.pdf Size:247K _international_rectifier

1.7. irl640pbf.pdf Size:941K _international_rectifier

PD — 94964
IRL640PbF
Lead-Free
01/30/04
Document Number: 91305 www.vishay.com
1
IRL640PbF
Document Number: 91305 www.vishay.com
2
IRL640PbF
Document Number: 91305 www.vishay.com
3
IRL640PbF
Document Number: 91305 www.vishay.com
4
IRL640PbF
Document Number: 91305 www.vishay.com
5
IRL640PbF
Document Number: 91305 www.vishay.com
6
IRL640PbF
Document Number: 91305 www.vis

1.8. irl640a.pdf Size:881K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Logic-Level Gate Drive
?
RDS(on) = 0.18
Avalanche Rugged Technology
Rugged Gate Oxide Technology
ID = 18 A
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 10 A (Max.) @ VDS = 200V
?
Lower RDS(ON) : 0.145 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symb

1.9. irl640 sihl640.pdf Size:1705K _vishay

IRL640, SiHL640
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 200
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = 5.0 V 0.18
RoHS*
Logic-Level Gate Drive
COMPLIANT
Qg (Max.) (nC) 66
RDS(on) Specified at VGS = 4 V and 5 V
Qgs (nC) 9.0
Fast Switching
Qgd (nC) 38
Ease of Paralleling
Configuration Single
Simple Drive Require

1.10. irl640s sihl640s.pdf Size:915K _vishay

IRL640S, SiHL640S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) 200
Definition
Surface Mount
RDS(on) (?)VGS = 5 V 0.18
Available in Tape and Reel
Qg (Max.) (nC) 66
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Qgs (nC) 9.0
Logic-Level Gate Drive
Qgd (nC) 38
RDS(on) Specified at VGS = 4 V and 5 V
Configurati

IRF640SPBF Datasheet (PDF)

1.1. irf640lpbf irf640spbf.pdf Size:196K _upd-mosfet

IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 200
• Surface Mount
RDS(on) ()VGS = 10 V 0.18
• Low-Profile Through-Hole
Qg (Max.) (nC) 70
• Available in Tape and Reel
Qgs (nC) 13
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
Qgd (nC) 39
• Fast Swi

3.1. irf640s.pdf Size:228K _international_rectifier

PD -90902B
IRF640S/L
HEXFET Power MOSFET
Surface Mount (IRF640S)
D
Low-profile through-hole (IRF640L)
VDSS = 200V
Available in Tape & Reel (IRF640S)
Dynamic dv/dt Rating
RDS(on) = 0.18Ω
150°C Operating Temperature
G
Fast Switching
ID = 18A
Fully Avalanche Rated
S
Description
Third Generation HEXFETs from International Rectifier provide
the designer with the best co

3.2. irf640s-l.pdf Size:935K _international_rectifier

PD — 95113
IRF640S/LPbF
Lead-Free
3/16/04
Document Number: 91037 www.vishay.com
1
IRF640S/LPbF
Document Number: 91037 www.vishay.com
2
IRF640S/LPbF
Document Number: 91037 www.vishay.com
3
IRF640S/LPbF
Document Number: 91037 www.vishay.com
4
IRF640S/LPbF
Document Number: 91037 www.vishay.com
5
IRF640S/LPbF
Document Number: 91037 www.vishay.com
6
IRF640S/LPbF
Document N

IRF640NSPBF Datasheet (PDF)

1.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _upd-mosfet

PD — 95046A
IRF640NPbF
IRF640NSPbF
l Advanced Process Technology IRF640NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements RDS(on) = 0.15Ω
G
l Lead-Free
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectif

3.1. irf640n.pdf Size:155K _international_rectifier

PD — 94006
IRF640N
IRF640NS
IRF640NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
D
175C Operating Temperature
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.15?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from S
International Rectifier utilize advanced processing
tech

3.2. irf640n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF640N，IIRF640N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤150mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T

RF1S640SM Datasheet (PDF)

1.1. irf640 rf1s640 rf1s640sm.pdf Size:128K _fairchild_semi

IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power Features
MOSFETs
• 18A, 200V
These are N-Channel enhancement mode silicon gate
• rDS(ON) = 0.180Ω
power field effect transistors. They are advanced power
• Single Pulse Avalanche Energy Rated
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakd

3.1. rf1s640.pdf Size:51K _update-mosfet

IRF640, IRF641, IRF642,
S E M I C O N D U C T O R
IRF643, RF1S640, RF1S640SM
16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,
N-Channel Power MOSFETs
January 1998
Features Description
• 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
• rDS(ON) = 0.18Ω and 0.22Ω
MOSFETs designed, tested, and guar

3.2. irf640 irf641 irf642 irf643 rf1s640.pdf Size:51K _harris_semi

IRF640, IRF641, IRF642,
S E M I C O N D U C T O R
IRF643, RF1S640, RF1S640SM
16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,
N-Channel Power MOSFETs
January 1998
Features Description
• 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
• rDS(ON) = 0.18Ω and 0.22Ω
MOSFETs designed, tested, and guar

IRFS640 Datasheet (PDF)

1.1. irfs640b.pdf Size:922K _upd

November 2001
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC)
planar, DMOS technology.
• Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to

1.2. irf640b irfs640b.pdf Size:916K _fairchild_semi

November 2001
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18? @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)
planar, DMOS technology.
Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to
Fast switchin

 1.3. irfs640a.pdf Size:508K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
RDS(on) = 0.18 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 9.8 A
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.144 ? (Typ. )
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Un

IRF640N Datasheet (PDF)

1.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _upd-mosfet

PD — 95046A
IRF640NPbF
IRF640NSPbF
l Advanced Process Technology IRF640NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements RDS(on) = 0.15Ω
G
l Lead-Free
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectif

1.2. irf640n.pdf Size:155K _international_rectifier

PD — 94006
IRF640N
IRF640NS
IRF640NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
D
175C Operating Temperature
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.15?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from S
International Rectifier utilize advanced processing
tech

 1.3. irf640n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF640N，IIRF640N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤150mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T

IRFS640B Datasheet (PDF)

1.1. irfs640b.pdf Size:922K _upd

November 2001
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC)
planar, DMOS technology.
• Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to

1.2. irf640b irfs640b.pdf Size:916K _fairchild_semi

November 2001
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18? @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)
planar, DMOS technology.
Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to
Fast switchin

 3.1. irfs640a.pdf Size:508K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
RDS(on) = 0.18 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 9.8 A
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.144 ? (Typ. )
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Un

IRFS630A Datasheet (PDF)

1.1. irfs630a.pdf Size:508K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
RDS(on) = 0.4 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 6.5 A
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Low RDS(ON) : 0.333 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

4.1. irfs634b.pdf Size:858K _upd

November 2001
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC)
planar, DMOS technology.
• Low Crss ( typical 20 pF)
This advanced technology has been especially tailored to

4.2. irf634b irfs634b.pdf Size:859K _fairchild_semi

November 2001
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45? @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)
planar, DMOS technology.
Low Crss ( typical 20 pF)
This advanced technology has been especially tailored to
Fast switchi

 4.3. irfs634a.pdf Size:505K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 250 V
Avalanche Rugged Technology
RDS(on) = 0.45
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.8 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 250V
Lower RDS(ON) : 0.327 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Uni

IRF640NS Datasheet (PDF)

1.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _upd-mosfet

PD — 95046A
IRF640NPbF
IRF640NSPbF
l Advanced Process Technology IRF640NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements RDS(on) = 0.15Ω
G
l Lead-Free
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectif

3.1. irf640n.pdf Size:155K _international_rectifier

PD — 94006
IRF640N
IRF640NS
IRF640NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
D
175C Operating Temperature
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.15?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 18A
Fifth Generation HEXFET Power MOSFETs from S
International Rectifier utilize advanced processing
tech

3.2. irf640n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF640N，IIRF640N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤150mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T