Транзистор irf840

IRFS840B Datasheet (PDF)

1.1. irfs840b.pdf Size:911K _upd

November 2001
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC)
planar, DMOS technology.
• Low Crss ( typical 35 pF)
This advanced technology has been especially tailored to

3.1. auirfs8403 auirfsl8403.pdf Size:277K _international_rectifier

AUIRFS8403
AUTOMOTIVE GRADE
AUIRFSL8403
HEXFET Power MOSFET
Features
l Advanced Process Technology
D
VDSS 40V
l New Ultra Low On-Resistance
l 175°C Operating Temperature
RDS(on) typ. 2.6mΩ
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
max. 3.3mΩ
l Lead-Free, RoHS Compliant
Automotive Qualified *
S
ID (Silicon Limited) 123A
Description
Specifically desi

3.2. auirfs8408-7p.pdf Size:275K _international_rectifier

AUIRFS8408-7P
AUTOMOTIVE GRADE
Features
HEXFET Power MOSFET
l Advanced Process Technology
40V
VDSS
l New Ultra Low On-Resistance
0.70m
RDS(on) typ. Ω
l 175°C Operating Temperature
l Fast Switching
max. 1.0m
Ω
l Repetitive Avalanche Allowed up to Tjmax
397A
ID (Silicon Limited)
l Lead-Free, RoHS Compliant
240A
ID (Package Limited)
l Automotive Qualified *
Description

 3.3. auirfb8407 auirfs8407 auirfsl8407.pdf Size:340K _international_rectifier

AUIRFB8407
AUTOMOTIVE GRADE
AUIRFS8407
AUIRFSL8407
Features
HEXFET Power MOSFET
l Advanced Process Technology
l New Ultra Low On-Resistance
VDSS 40V
D
l 175°C Operating Temperature
RDS(on) typ. 1.4m
l Fast Switching Ω
l Repetitive Avalanche Allowed up to Tjmax
(SMD version) max. 1.8m
Ω
l Lead-Free, RoHS Compliant
G
250A
ID (Silicon Limited)
Automotive Qualified *
S

3.4. auirfs8405 auirfsl8405.pdf Size:351K _international_rectifier

AUIRFS8405
AUTOMOTIVE GRADE
AUIRFSL8405
Features
HEXFET Power MOSFET
l Advanced Process Technology
D
l New Ultra Low On-Resistance VDSS 40V
l 175°C Operating Temperature
RDS(on) typ.1.9mΩ
l Fast Switching
max. 2.3mΩ
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant G
ID (Silicon Limited) 193A
l Automotive Qualified *
ID (Package Limited) 120A
S
De

 3.5. auirfs8409-7p.pdf Size:277K _international_rectifier

AUIRFS8409-7P
AUTOMOTIVE GRADE
Features
HEXFET Power MOSFET
l Advanced Process Technology
40V
VDSS
l New Ultra Low On-Resistance
0.55m
RDS(on) typ. Ω
l 175°C Operating Temperature
max. 0.75m
Ω
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
522A
ID (Silicon Limited)
l Lead-Free, RoHS Compliant
240A
ID (Package Limited)
l Automotive Qualified *
Description

3.6. auirfs8408 auirfsl8408.pdf Size:291K _international_rectifier

AUIRFS8408
AUTOMOTIVE GRADE
AUIRFSL8408
Features
HEXFET Power MOSFET
l Advanced Process Technology
VDSS 40V
l New Ultra Low On-Resistance
l 175°C Operating Temperature
RDS(on) typ. 1.3m
Ω
l Fast Switching
max. 1.6m
Ω
l Repetitive Avalanche Allowed up to Tjmax
ID (Silicon Limited) 317A
l Lead-Free, RoHS Compliant
l Automotive Qualified *
ID (Package Limited) 195A
Descri

3.7. auirfs8407-7p.pdf Size:220K _international_rectifier

AUTOMOTIVE GRADE
AUIRFS8407-7P
Features
HEXFET Power MOSFET
 Advanced Process Technology
D
 New Ultra Low On-Resistance
VDSS 40V
 175°C Operating Temperature
RDS(on) typ.1.0mΩ
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
max. 1.3mΩ
 Lead-Free, RoHS Compliant
G
ID (Silicon Limited) 306A
 Automotive Qualified *
Description
ID (Package L

3.8. auirfb8409 auirfs8409 auirfsl8409.pdf Size:398K _international_rectifier

AUIRFB8409
AUTOMOTIVE GRADE AUIRFS8409
AUIRFSL8409
Features
HEXFET Power MOSFET
l Advanced Process Technology
D
l New Ultra Low On-Resistance VDSS 40V
l 175°C Operating Temperature
RDS(on) (SMD) typ. 0.97mΩ
l Fast Switching
max. 1.2mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A
l Automotive Qualified *
ID (Package Li

3.9. irfs840a.pdf Size:511K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 500 V
Avalanche Rugged Technology
RDS(on) = 0.85
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 4.6 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 0.638 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Uni

2SK2209-01R MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK2209-01R

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 80
W

Предельно допустимое напряжение сток-исток (Uds): 500
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Максимально допустимый постоянный ток стока (Id): 15
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 70
ns

Выходная емкость (Cd): 260
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.48
Ohm

Тип корпуса: TO3PF

2SK2209-01R
Datasheet (PDF)

1.1. 2sk2209-01r.pdf Size:159K _update



4.1. 2sk2201.pdf Size:422K _toshiba

2SK2201
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV)
2SK2201
Chopper Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
4 V gate drive
Low drain-source ON resistance : R = 0.28 ? (typ.)
DS (ON)
High forward transfer admittance : |Y | = 3.5 S (typ.)
fs
Low leakage current : IDSS = 100 µA (max) (V = 100 V)
DS
Enhancemen

4.2. 2sk2200.pdf Size:412K _toshiba

2SK2200
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV)
2SK2200
Chopper Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
4 V gate drive
Low drain-source ON resistance : R = 0.28 ? (typ.)
DS (ON)
High forward transfer admittance : |Y | = 3.5 S (typ.)
fs
Low leakage current : IDSS = 100 µA (max) (V = 100 V)
DS
Enhancemen

 4.3. 2sk2202.pdf Size:81K _renesas

2SK2202
Silicon N Channel MOS FET
REJ03G1002-0300
(Previous: ADE-208-139)
Rev.3.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name

4.4. rej03g1002 2sk2202ds.pdf Size:95K _renesas

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re

 4.5. 2sk2207.pdf Size:35K _no

2SK2207
External dimensions
1 …… FM20
Absolute Maximum Ratings Electrical Characteristics
(Ta = 25ºC) (Ta = 25ºC)
Ratings
Symbol Ratings Unit Symbol Unit Conditions
min typ max
V 900 V V 900 V I = 100µA, V = 0V
DSS (BR) DSS D GS
V ±30 V I ±100 nA V = ±30V
GSS GSS GS
I ±3I 100 µA V = 900V, V = 0V
D A DSS DS GS
I ±12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA
D (pulse) TH DS

Другие MOSFET… IRF830AS
, IRF830FI
, IRF830S
, IRF831
, IRF831FI
, IRF832
, IRF833
, IRF840
, J113
, IRF840A
, IRF840AS
, IRF840FI
, IRF840S
, IRF841
, IRF841FI
, IRF842
, IRF843
.

2SK2209-01R Datasheet (PDF)

1.1. 2sk2209-01r.pdf Size:159K _update



4.1. 2sk2201.pdf Size:422K _toshiba

2SK2201
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV)
2SK2201
Chopper Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
4 V gate drive
Low drain-source ON resistance : R = 0.28 ? (typ.)
DS (ON)
High forward transfer admittance : |Y | = 3.5 S (typ.)
fs
Low leakage current : IDSS = 100 µA (max) (V = 100 V)
DS
Enhancemen

4.2. 2sk2200.pdf Size:412K _toshiba

2SK2200
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV)
2SK2200
Chopper Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
4 V gate drive
Low drain-source ON resistance : R = 0.28 ? (typ.)
DS (ON)
High forward transfer admittance : |Y | = 3.5 S (typ.)
fs
Low leakage current : IDSS = 100 µA (max) (V = 100 V)
DS
Enhancemen

 4.3. 2sk2202.pdf Size:81K _renesas

2SK2202
Silicon N Channel MOS FET
REJ03G1002-0300
(Previous: ADE-208-139)
Rev.3.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name

4.4. rej03g1002 2sk2202ds.pdf Size:95K _renesas

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re

 4.5. 2sk2207.pdf Size:35K _no

2SK2207
External dimensions
1 …… FM20
Absolute Maximum Ratings Electrical Characteristics
(Ta = 25ºC) (Ta = 25ºC)
Ratings
Symbol Ratings Unit Symbol Unit Conditions
min typ max
V 900 V V 900 V I = 100µA, V = 0V
DSS (BR) DSS D GS
V ±30 V I ±100 nA V = ±30V
GSS GSS GS
I ±3I 100 µA V = 900V, V = 0V
D A DSS DS GS
I ±12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA
D (pulse) TH DS

IRF840A MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF840A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125
W

Предельно допустимое напряжение сток-исток (Uds): 500
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 8
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 38
nC

Выходная емкость (Cd): 1018
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.85
Ohm

Тип корпуса: TO220

IRF840A
Datasheet (PDF)

1.1. irf840apbf.pdf Size:185K _upd-mosfet

PD- 94829
SMPS MOSFET
IRF840APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 500V 0.85Ω 8.0A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
S
D
A

1.2. irf840alpbf irf840aspbf.pdf Size:199K _upd-mosfet

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 500
Definition
RDS(on) ()VGS = 10 V 0.85
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 38
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 9.0
Ruggedness
Qgd (nC) 18
• Fully Characterized Capa

 1.3. irf840a.pdf Size:99K _st

IRF840/FI
IRF841/FI
N — CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE VDSS RDS(on) ID
IRF840 500 V 1.4. irf840as.pdf Size:129K _international_rectifier

PD- 91901B
IRF840AS
SMPS MOSFET
IRF840AL
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply 500V 0.85? 8.0A
High Speed Power Switching
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D2Pak TO-262
Avalanche

 1.5. irf840a.pdf Size:199K _international_rectifier

PD- 94829
SMPS MOSFET
IRF840APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 500V 0.85? 8.0A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
S
D
Avalanc

1.6. irf840aspbf irf840alpbf.pdf Size:673K _international_rectifier

PD- 95143
IRF840ASPbF
SMPS MOSFET
IRF840ALPbF
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply 500V 0.85? 8.0A
High Speed Power Switching
Lead-Free
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D2Pak T

1.7. irf840a.pdf Size:941K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 500 V
Avalanche Rugged Technology
RDS(on) = 0.85
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 8 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 0.638 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

1.8. irf840a sihf840a.pdf Size:206K _vishay

IRF840A, SiHF840A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 500
Requirement Available
RDS(on) (?)VGS = 10 V 0.85
Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 38
COMPLIANT
Ruggedness
Qgs (nC) 9.0
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 18
and Current
Configuration Single

1.9. irf840a.pdf Size:193K _inchange_semiconductor

isc N-Channel Mosfet Transistor IRF840A
·FEATURES
·Drain Source Voltage-
: V = 500V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.85Ω(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switch mode power supply
·Uninterruptable power supply
·High speed power switching
·ABSOLUTE MAXIMUM

Другие MOSFET… IRF830FI
, IRF830S
, IRF831
, IRF831FI
, IRF832
, IRF833
, IRF840
, 2SK2209-01R
, SPA11N60C3
, IRF840AS
, IRF840FI
, IRF840S
, IRF841
, IRF841FI
, IRF842
, IRF843
, IRF9130
.

IRF840AS Datasheet (PDF)

1.1. irf840alpbf irf840aspbf.pdf Size:199K _upd-mosfet

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 500
Definition
RDS(on) ()VGS = 10 V 0.85
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 38
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 9.0
Ruggedness
Qgd (nC) 18
• Fully Characterized Capa

1.2. irf840as.pdf Size:129K _international_rectifier

PD- 91901B
IRF840AS
SMPS MOSFET
IRF840AL
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply 500V 0.85? 8.0A
High Speed Power Switching
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D2Pak TO-262
Avalanche

 1.3. irf840aspbf irf840alpbf.pdf Size:673K _international_rectifier

PD- 95143
IRF840ASPbF
SMPS MOSFET
IRF840ALPbF
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply 500V 0.85? 8.0A
High Speed Power Switching
Lead-Free
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D2Pak T

IRF840APBF Datasheet (PDF)

1.1. irf840apbf.pdf Size:185K _upd-mosfet

PD- 94829
SMPS MOSFET
IRF840APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 500V 0.85Ω 8.0A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
S
D
A

3.1. irf840alpbf irf840aspbf.pdf Size:199K _upd-mosfet

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 500
Definition
RDS(on) ()VGS = 10 V 0.85
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 38
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 9.0
Ruggedness
Qgd (nC) 18
• Fully Characterized Capa

3.2. irf840a.pdf Size:99K _st

IRF840/FI
IRF841/FI
N — CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE VDSS RDS(on) ID
IRF840 500 V

 3.3. irf840as.pdf Size:129K _international_rectifier

PD- 91901B
IRF840AS
SMPS MOSFET
IRF840AL
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply 500V 0.85? 8.0A
High Speed Power Switching
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D2Pak TO-262
Avalanche

3.4. irf840a.pdf Size:199K _international_rectifier

PD- 94829
SMPS MOSFET
IRF840APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 500V 0.85? 8.0A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
S
D
Avalanc

 3.5. irf840aspbf irf840alpbf.pdf Size:673K _international_rectifier

PD- 95143
IRF840ASPbF
SMPS MOSFET
IRF840ALPbF
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply 500V 0.85? 8.0A
High Speed Power Switching
Lead-Free
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D2Pak T

3.6. irf840a.pdf Size:941K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 500 V
Avalanche Rugged Technology
RDS(on) = 0.85
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 8 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 500V
Lower RDS(ON) : 0.638 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

3.7. irf840a sihf840a.pdf Size:206K _vishay

IRF840A, SiHF840A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 500
Requirement Available
RDS(on) (?)VGS = 10 V 0.85
Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 38
COMPLIANT
Ruggedness
Qgs (nC) 9.0
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 18
and Current
Configuration Single

3.8. irf840a.pdf Size:193K _inchange_semiconductor

isc N-Channel Mosfet Transistor IRF840A
·FEATURES
·Drain Source Voltage-
: V = 500V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.85Ω(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switch mode power supply
·Uninterruptable power supply
·High speed power switching
·ABSOLUTE MAXIMUM