Транзистор irf540

IRF540NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF540NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 130
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 33
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 71
nC

Время нарастания (tr): 35
ns

Выходная емкость (Cd): 250
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.044
Ohm

Тип корпуса: TO-220AB

IRF540NPBF
Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

 3.1. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

3.2. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 3.3. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

3.4. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N，IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 3.5. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

3.6. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) ＜ 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

Другие MOSFET… IRF5210SPBF
, IRF5305LPBF
, IRF5305PBF
, IRF5305SPBF
, IRF530NPBF
, IRF530NSPBF
, IRF530S
, IRF540NLPBF
, IRF640N
, IRF540NSPBF
, IRF540S
, IRF540SPBF
, IRF540ZLPBF
, IRF540ZPBF
, IRF540ZSPBF
, IRF5800
, IRF5801PBF-1
.

IRF540A Datasheet (PDF)

1.1. irf540a.pdf Size:256K _fairchild_semi

IRF540A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
?
RDS(on) = 0.052
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 28 A
Improved Gate Charge
Extended Safe Operating Area
TO-220
?
175 C Operating Temperature

Lower Leakage Current : 10 A (Max.) @ VDS = 100V
?
Lower RDS(ON) : 0.041 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absol

1.2. irf540a.pdf Size:951K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
?
RDS(on) = 0.052
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 28 A
Improved Gate Charge
Extended Safe Operating Area
?
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
?
Lower RDS(ON) : 0.041 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings

 1.3. irf540a.pdf Size:283K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF540A
FEATURES
·Static drain-source on-resistance:
RDS(on) ≤52mΩ
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies.
ABSOLUTE MAXIMUM RATINGS(T =25

IRF540N Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

 1.3. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

1.4. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 1.5. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

1.6. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N，IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

1.7. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.8. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) ＜ 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

IRF540NL Datasheet (PDF)

1.1. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

3.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

3.2. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

 3.3. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

3.4. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

 3.5. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N，IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

3.6. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

3.7. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) ＜ 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

IRF540NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF540NS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 33
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 47.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.052
Ohm

Тип корпуса: D2PAK

IRF540NS
Datasheet (PDF)

1.1. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

1.2. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

 1.3. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.4. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) ＜ 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

Другие MOSFET… IRF531
, IRF532
, IRF533
, IRF540
, IRF540A
, IRF540FI
, IRF540N
, IRF540NL
, IRF830
, IRF541
, IRF542
, IRF543
, IRF550A
, IRF610
, IRF610A
, IRF610S
, IRF611
.

IRF540NS Datasheet (PDF)

1.1. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

1.2. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

 1.3. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.4. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) ＜ 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour