Транзистор irf740

IRF740SPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF740SPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125
W

Предельно допустимое напряжение сток-исток (Uds): 400
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 10
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 63
nC

Время нарастания (tr): 27
ns

Выходная емкость (Cd): 330
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.55
Ohm

Тип корпуса: TO-263

IRF740SPBF
Datasheet (PDF)

1.1. irf740spbf.pdf Size:195K _upd-mosfet

IRF740S, SiHF740S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 400
• Surface Mount
RDS(on) ()VGS = 10 V 0.55
• Available in Tape and Reel
Qg (Max.) (nC) 63
• Dynamic dV/dt Rating
Qgs (nC) 9.0
• Repetitive Avalanche Rated
• Fast Switching
Qgd (nC) 32
• Ease of Paralleling
Configuration Sin

1.2. irf740spbf.pdf Size:951K _international_rectifier

PD — 95204
IRF740SPbF
Lead-Free
4/29/04
Document Number: 91055 www.vishay.com
1
IRF740SPbF
Document Number: 91055 www.vishay.com
2
IRF740SPbF
Document Number: 91055 www.vishay.com
3
IRF740SPbF
Document Number: 91055 www.vishay.com
4
IRF740SPbF
Document Number: 91055 www.vishay.com
5
IRF740SPbF
Document Number: 91055 www.vishay.com
6
IRF740SPbF
D2Pak Package Outline
D

 3.1. irf740s.pdf Size:93K _st

IRF740S
?
N — CHANNEL 400V — 0.48 ? — 10A- D2PAK
PowerMESH? MOSFET
TYPE VDSS RDS(on) ID
IRF740S 400 V 3.2. irf740s.pdf Size:171K _international_rectifier

Другие MOSFET… IRF7406PBF-1
, IRF740ALPBF
, IRF740APBF
, IRF740ASPBF
, IRF740B
, IRF740LC
, IRF740LCPBF
, IRF740PBF
, IRF830
, IRF7410GPBF
, IRF7410PBF-1
, IRF7410PBF
, IRF7413GPBF
, IRF7413PBF
, IRF7413PBF-1
, IRF7413QPBF
, IRF7413ZGPBF
.

IRF740AS Datasheet (PDF)

1.1. irf740alpbf irf740aspbf.pdf Size:316K _upd-mosfet

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55Ω 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
2

1.2. irf740as.pdf Size:135K _international_rectifier

PD- 92005
SMPS MOSFET
IRF740AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply 400V 0.55? 10A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Volt

 1.3. irf740as-l.pdf Size:304K _international_rectifier

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

IRF740AL Datasheet (PDF)

1.1. irf740alpbf irf740aspbf.pdf Size:316K _upd-mosfet

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55Ω 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
2

3.1. irf740apbf.pdf Size:206K _upd-mosfet

IRF740A, SiHF740A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 400
Requirement
Available
RDS(on) ()VGS = 10 V 0.55
• Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 36
COMPLIANT
Ruggedness
Qgs (nC) 9.9
• Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 16
and Current
Configur

3.2. irf740as.pdf Size:135K _international_rectifier

PD- 92005
SMPS MOSFET
IRF740AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply 400V 0.55? 10A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Volt

 3.3. irf740as-l.pdf Size:304K _international_rectifier

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

3.4. irf740a.pdf Size:196K _international_rectifier

PD- 94828
SMPS MOSFET
IRF740APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Volt

 3.5. irf740a.pdf Size:937K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
RDS(on) = 0.55
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Lower RDS(ON) : 0.437 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Unit

3.6. irf740a sihf740a.pdf Size:205K _vishay

IRF740A, SiHF740A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 400
Requirement
Available
RDS(on) (?)VGS = 10 V 0.55
Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 36
COMPLIANT
Ruggedness
Qgs (nC) 9.9
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 16
and Current
Configuration Singl

3.7. irf740a.pdf Size:213K _inchange_semiconductor

isc N-Channel Mosfet Transistor IRF740A
·FEATURES
·Drain Source Voltage-
: V = 400V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.55Ω(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switch mode power supply
·Uninterruptable power supply
·High speed power switching
·ABSOLUTE MAXIMUM

IRF7416 Datasheet (PDF)

1.1. irf7416pbf-1.pdf Size:228K _upd-mosfet

IRF7416PbF-1
HEXFET Power MOSFET
VDS -30 V
A
1 8
S D
RDS(on) max
0.020 Ω
2 7
(@V = -10V) S D
GS
Qg (typical) 61 nC
3 6
S D
ID
4 5
-10 A
G D
(@T = 25°C)
A
SO-8
Top View
Features Benefits
Industry-standard pinout SO-8 Package Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant, Halogen-Free Environmen

1.2. irf7416pbf.pdf Size:234K _upd-mosfet

PD — 95137A
IRF7416PbF
l Generation V Technology HEXFET Power MOSFET
l Ultra Low On-Resistance
A
l P-Channel Mosfet
1 8
S D
l Surface Mount
VDSS = -30V
2 7
S D
l Available in Tape & Reel
3 6
l Dynamic dv/dt Rating
S D
l Fast Switching
4
5
G D
RDS(on) = 0.02Ω
l Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced proces

 1.3. irf7416gpbf.pdf Size:233K _upd-mosfet

PD — 96252A
IRF7416GPbF
HEXFET Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance A
1 8
S D
l P-Channel Mosfet
VDSS = -30V
l Surface Mount 2 7
S D
l Available in Tape & Reel
3 6
l Dynamic dv/dt Rating
S D
l Fast Switching
4
5
G D
l Lead-Free
RDS(on) = 0.02Ω
l Halogen-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize

1.4. irf7416qpbf.pdf Size:269K _upd-mosfet

PD — 96124
IRF7416QPbF
HEXFET Power MOSFET
l Advanced Process Technology
A
1 8
l Ultra Low On-Resistance
S D
l P Channel MOSFET
VDSS = -30V
2 7
S D
l Surface Mount
3 6
l Available in Tape & Reel
S D
l 150°C Operating Temperature
4
5
G D
RDS(on) = 0.02Ω
l Automotive Qualified
l Lead-Free
Top View
Description
Specifically designed for Automotive applications,

 1.5. irf7416.pdf Size:116K _international_rectifier

PD — 9.1356D
IRF7416
HEXFET Power MOSFET
Generation V Technology
A
1 8
Ultra Low On-Resistance
S D
P-Channel Mosfet VDSS = -30V
2 7
S D
Surface Mount
3 6
S D
Available in Tape & Reel
4 5
Dynamic dv/dt Rating
G D
RDS(on) = 0.02?
Fast Switching
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve

IRF740LC Datasheet (PDF)

1.1. irf740lc irf740lcpbf.pdf Size:197K _upd-mosfet

IRF740LC, SiHF740LC
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Ultra Low Gate Charge
VDS (V) 400
• Reduced Gate Drive Requirement Available
RDS(on) (Ω)VGS = 10 V 0.55
• Enhanced 30 V VGS Rating
RoHS*
COMPLIANT
Qg (Max.) (nC) 39
• Reduced Ciss, Coss, Crss
Qgs (nC) 10
• Extremely High Frequency Operation
Qgd (nC) 19 • Repetitive Avalanche Rated
• Comp

1.2. irf740lcpbf.pdf Size:1404K _international_rectifier

PD — 94880
IRF740LCPbF
Lead-Free
12/10/03
Document Number: 91052 www.vishay.com
1
IRF740LCPbF
Document Number: 91052 www.vishay.com
2
IRF740LCPbF
Document Number: 91052 www.vishay.com
3
IRF740LCPbF
Document Number: 91052 www.vishay.com
4
IRF740LCPbF
Document Number: 91052 www.vishay.com
5
IRF740LCPbF
Document Number: 91052 www.vishay.com
6
IRF740LCPbF
Document Number:

 1.3. irf740lc.pdf Size:174K _international_rectifier

1.4. irf740lc sihf740lc.pdf Size:197K _vishay

IRF740LC, SiHF740LC
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Ultra Low Gate Charge
VDS (V) 400
Reduced Gate Drive Requirement Available
RDS(on) (?)VGS = 10 V 0.55
Enhanced 30 V VGS Rating
RoHS*
COMPLIANT
Qg (Max.) (nC) 39
Reduced Ciss, Coss, Crss
Qgs (nC) 10
Extremely High Frequency Operation
Qgd (nC) 19 Repetitive Avalanche Rated
Compliant to RoHS Dire

IRF740APBF Datasheet (PDF)

1.1. irf740apbf.pdf Size:206K _upd-mosfet

IRF740A, SiHF740A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 400
Requirement
Available
RDS(on) ()VGS = 10 V 0.55
• Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 36
COMPLIANT
Ruggedness
Qgs (nC) 9.9
• Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 16
and Current
Configur

3.1. irf740alpbf irf740aspbf.pdf Size:316K _upd-mosfet

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55Ω 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
2

3.2. irf740as.pdf Size:135K _international_rectifier

PD- 92005
SMPS MOSFET
IRF740AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply 400V 0.55? 10A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Volt

 3.3. irf740as-l.pdf Size:304K _international_rectifier

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

3.4. irf740a.pdf Size:196K _international_rectifier

PD- 94828
SMPS MOSFET
IRF740APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Volt

 3.5. irf740a.pdf Size:937K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
RDS(on) = 0.55
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Lower RDS(ON) : 0.437 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Unit

3.6. irf740a sihf740a.pdf Size:205K _vishay

IRF740A, SiHF740A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 400
Requirement
Available
RDS(on) (?)VGS = 10 V 0.55
Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 36
COMPLIANT
Ruggedness
Qgs (nC) 9.9
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 16
and Current
Configuration Singl

3.7. irf740a.pdf Size:213K _inchange_semiconductor

isc N-Channel Mosfet Transistor IRF740A
·FEATURES
·Drain Source Voltage-
: V = 400V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.55Ω(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switch mode power supply
·Uninterruptable power supply
·High speed power switching
·ABSOLUTE MAXIMUM

IRF740A MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF740A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 134
W

Предельно допустимое напряжение сток-исток (Uds): 400
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 10
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 36
nC

Выходная емкость (Cd): 1180
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.55
Ohm

Тип корпуса: TO220

IRF740A
Datasheet (PDF)

1.1. irf740apbf.pdf Size:206K _upd-mosfet

IRF740A, SiHF740A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 400
Requirement
Available
RDS(on) ()VGS = 10 V 0.55
• Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 36
COMPLIANT
Ruggedness
Qgs (nC) 9.9
• Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 16
and Current
Configur

1.2. irf740alpbf irf740aspbf.pdf Size:316K _upd-mosfet

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55Ω 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
2

 1.3. irf740as.pdf Size:135K _international_rectifier

PD- 92005
SMPS MOSFET
IRF740AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply 400V 0.55? 10A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Volt

1.4. irf740as-l.pdf Size:304K _international_rectifier

PD- 95532
SMPS MOSFET
IRF740AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

 1.5. irf740a.pdf Size:196K _international_rectifier

PD- 94828
SMPS MOSFET
IRF740APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply 400V 0.55? 10A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Volt

1.6. irf740a.pdf Size:937K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
RDS(on) = 0.55
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Lower RDS(ON) : 0.437 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Unit

1.7. irf740a sihf740a.pdf Size:205K _vishay

IRF740A, SiHF740A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 400
Requirement
Available
RDS(on) (?)VGS = 10 V 0.55
Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
Qg (Max.) (nC) 36
COMPLIANT
Ruggedness
Qgs (nC) 9.9
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 16
and Current
Configuration Singl

1.8. irf740a.pdf Size:213K _inchange_semiconductor

isc N-Channel Mosfet Transistor IRF740A
·FEATURES
·Drain Source Voltage-
: V = 400V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.55Ω(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switch mode power supply
·Uninterruptable power supply
·High speed power switching
·ABSOLUTE MAXIMUM

Другие MOSFET… IRF734
, IRF7353D1
, IRF737LC
, IRF740
, IRF7401
, IRF7403
, IRF7404
, IRF7406
, RFP50N06
, IRF740AL
, IRF740AS
, IRF740FI
, IRF740S
, IRF741
, IRF7413
, IRF7413A
, IRF7416
.

IRF740LC MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF740LC

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125
W

Предельно допустимое напряжение сток-исток (Uds): 400
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 10
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 39
nC

Время нарастания (tr): 31
ns

Выходная емкость (Cd): 190
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.55
Ohm

Тип корпуса: TO-220AB

IRF740LC
Datasheet (PDF)

1.1. irf740lc irf740lcpbf.pdf Size:197K _upd-mosfet

IRF740LC, SiHF740LC
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Ultra Low Gate Charge
VDS (V) 400
• Reduced Gate Drive Requirement Available
RDS(on) (Ω)VGS = 10 V 0.55
• Enhanced 30 V VGS Rating
RoHS*
COMPLIANT
Qg (Max.) (nC) 39
• Reduced Ciss, Coss, Crss
Qgs (nC) 10
• Extremely High Frequency Operation
Qgd (nC) 19 • Repetitive Avalanche Rated
• Comp

1.2. irf740lcpbf.pdf Size:1404K _international_rectifier

PD — 94880
IRF740LCPbF
Lead-Free
12/10/03
Document Number: 91052 www.vishay.com
1
IRF740LCPbF
Document Number: 91052 www.vishay.com
2
IRF740LCPbF
Document Number: 91052 www.vishay.com
3
IRF740LCPbF
Document Number: 91052 www.vishay.com
4
IRF740LCPbF
Document Number: 91052 www.vishay.com
5
IRF740LCPbF
Document Number: 91052 www.vishay.com
6
IRF740LCPbF
Document Number:

 1.3. irf740lc.pdf Size:174K _international_rectifier

1.4. irf740lc sihf740lc.pdf Size:197K _vishay

IRF740LC, SiHF740LC
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Ultra Low Gate Charge
VDS (V) 400
Reduced Gate Drive Requirement Available
RDS(on) (?)VGS = 10 V 0.55
Enhanced 30 V VGS Rating
RoHS*
COMPLIANT
Qg (Max.) (nC) 39
Reduced Ciss, Coss, Crss
Qgs (nC) 10
Extremely High Frequency Operation
Qgd (nC) 19 Repetitive Avalanche Rated
Compliant to RoHS Dire

Другие MOSFET… IRF7404PBF
, IRF7406GPBF
, IRF7406PBF
, IRF7406PBF-1
, IRF740ALPBF
, IRF740APBF
, IRF740ASPBF
, IRF740B
, IRFP450
, IRF740LCPBF
, IRF740PBF
, IRF740SPBF
, IRF7410GPBF
, IRF7410PBF-1
, IRF7410PBF
, IRF7413GPBF
, IRF7413PBF
.

IRFI740G MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFI740G

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 40
W

Предельно допустимое напряжение сток-исток (Uds): 400
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 5.4
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 66
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.55
Ohm

Тип корпуса: TO220

IRFI740G
Datasheet (PDF)

1.1. irfi740g.pdf Size:925K _international_rectifier

PD — 94854
IRFI740GPbF
Lead-Free
11/19/03
Document Number: 91156 www.vishay.com
1
IRFI740GPbF
Document Number: 91156 www.vishay.com
2
IRFI740GPbF
Document Number: 91156 www.vishay.com
3
IRFI740GPbF
Document Number: 91156 www.vishay.com
4
IRFI740GPbF
Document Number: 91156 www.vishay.com
5
IRFI740GPbF
Document Number: 91156 www.vishay.com
6
IRFI740GPbF
TO-220 Full-Pak

1.2. irfi740glc.pdf Size:221K _international_rectifier

 1.3. irfi740g sihfi740g.pdf Size:1583K _vishay

IRFI740G, SiHFI740G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
VDS (V) 400
High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
RDS(on) (?)VGS = 10 V 0.55
f = 60 Hz)
RoHS*
Qg (Max.) (nC) 66
COMPLIANT
Sink to Lead Creepage Distance = 4.8 mm
Qgs (nC) 10
Dynamic dV/dt Rating
Qgd (nC) 33
Low Thermal Resistance
Configuration Single
Lead (P

1.4. irfi740glc sihfi740glc.pdf Size:1296K _vishay

IRFI740GLC, SiHFI740GLC
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Ultra Low Gate Charge
VDS (V) 400
Reduced Gate Drive Requirement
Available
RDS(on) (?)VGS = 10 V 0.55
Enhanced 30 V VGS Rating
RoHS*
Isolated Package
Qg (Max.) (nC) 39
COMPLIANT
High Voltage Isolation = 2.5 kVRMS (t = 60 s,
Qgs (nC) 10
f = 60 Hz)
Qgd (nC) 19
Sink to Lead Creepage Distance

Другие MOSFET… IRFI644G
, IRFI710A
, IRFI720A
, IRFI720G
, IRFI730A
, IRFI730G
, IRFI734G
, IRFI740A
, BUK455-200A
, IRFI740GLC
, IRFI744G
, IRFI820A
, IRFI820G
, IRFI830A
, IRFI830G
, IRFI840A
, IRFI840G
.

Оцените статью:
Оставить комментарий
Adblock
detector