Irf730

IRF730ASPBF Datasheet (PDF)

1.1. irf730alpbf irf730aspbf.pdf Size:199K _upd-mosfet

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
RDS(on) (Max.) ()VGS = 10 V 1.0
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 22
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 5.8
Ruggedness
Qgd (nC) 9.3
• Fully Characteriz

2.1. irf730as.pdf Size:149K _international_rectifier

PD-93772A
SMPS MOSFET
IRF730AS/L
HEXFET Power MOSFET

Applications
VDSS Rds(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply 400V 1.0? 5.5A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Voltag

2.2. irf730as-l.pdf Size:309K _international_rectifier

PD-95114
SMPS MOSFET
IRF730AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

IRF730APBF Datasheet (PDF)

1.1. irf730apbf.pdf Size:206K _upd-mosfet

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg results in Simple Drive
VDS (V) 400
Available
Requirement
RDS(on) (Ω)VGS = 10 V 1.0
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 22 Ruggedness
Qgs (nC) 5.8 • Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC) 9.3
• Effecti

3.1. irf730alpbf irf730aspbf.pdf Size:199K _upd-mosfet

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
RDS(on) (Max.) ()VGS = 10 V 1.0
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 22
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 5.8
Ruggedness
Qgd (nC) 9.3
• Fully Characteriz

3.2. irf730as.pdf Size:149K _international_rectifier

PD-93772A
SMPS MOSFET
IRF730AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply 400V 1.0? 5.5A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Voltag

 3.3. irf730as-l.pdf Size:309K _international_rectifier

PD-95114
SMPS MOSFET
IRF730AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

3.4. irf730a.pdf Size:376K _international_rectifier

PD — 94976
SMPS MOSFET
IRF730APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Volt

 3.5. irf730a.pdf Size:927K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
?
RDS(on) = 1.0
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V

?
Lower RDS(ON) : 0.765 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Un

3.6. irf730a sihf730a.pdf Size:206K _vishay

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg results in Simple Drive
VDS (V) 400
Available
Requirement
RDS(on) (?)VGS = 10 V 1.0
RoHS*
Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 22 Ruggedness
Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC) 9.3
Effective Coss Spec

3.7. irf730a.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF730A
FEATURES
·Drain Current –I =5.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 400V(Min)
DSS
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switch Mode Power Supply
·Uninterruptable Power Supply
·High speed power swi

IRF730AL Datasheet (PDF)

1.1. irf730alpbf irf730aspbf.pdf Size:199K _upd-mosfet

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
RDS(on) (Max.) ()VGS = 10 V 1.0
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 22
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 5.8
Ruggedness
Qgd (nC) 9.3
• Fully Characteriz

3.1. irf730apbf.pdf Size:206K _upd-mosfet

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg results in Simple Drive
VDS (V) 400
Available
Requirement
RDS(on) (Ω)VGS = 10 V 1.0
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 22 Ruggedness
Qgs (nC) 5.8 • Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC) 9.3
• Effecti

3.2. irf730as.pdf Size:149K _international_rectifier

PD-93772A
SMPS MOSFET
IRF730AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply 400V 1.0? 5.5A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Voltag

 3.3. irf730as-l.pdf Size:309K _international_rectifier

PD-95114
SMPS MOSFET
IRF730AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

3.4. irf730a.pdf Size:376K _international_rectifier

PD — 94976
SMPS MOSFET
IRF730APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Volt

 3.5. irf730a.pdf Size:927K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
?
RDS(on) = 1.0
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V

?
Lower RDS(ON) : 0.765 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Un

3.6. irf730a sihf730a.pdf Size:206K _vishay

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg results in Simple Drive
VDS (V) 400
Available
Requirement
RDS(on) (?)VGS = 10 V 1.0
RoHS*
Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 22 Ruggedness
Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC) 9.3
Effective Coss Spec

3.7. irf730a.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF730A
FEATURES
·Drain Current –I =5.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 400V(Min)
DSS
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switch Mode Power Supply
·Uninterruptable Power Supply
·High speed power swi

IRF733 Datasheet (PDF)

1.1. irf7331pbf-1.pdf Size:194K _upd-mosfet

IRF7331TRPbF-1
HEXFET Power MOSFET
VDS 20 V
1 8
S1 D1
RDS(on) max
30
2 7
(@V = 4.5V) G1 D1
GS

RDS(on) max 3 6
S2 D2
45
(@V = 2.5V)
GS
4
5
G2 D2
Qg (typical) 13 nC
ID
Top View SO-8
7.0 A
(@T = 25°C)
A
Features Benefits
Industry-standard pinout SO-8 Package Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques Easier Manufacturing
R

1.2. irf7331.pdf Size:199K _international_rectifier

PD — 94225
IRF7331
HEXFET Power MOSFET
Ultra Low On-Resistance
?)
VDSS RDS(on) max (m?) ID
?)
?)
?)
Dual N-Channel MOSFET
20V 30@VGS = 4.5V 7.0A
Surface Mount
45@VGS = 2.5V 5.6A
Available in Tape & Reel
Description
1 8
S1 D1
These N-Channel HEXFET? power MOSFETs from
2 7
G1 D1
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-r

 1.3. irf7338.pdf Size:169K _international_rectifier

PD — 94372A
IRF7338
HEXFET Power MOSFET
l Ultra Low On-Resistance
N-CHANNEL MOSFET
N-Ch P-Ch
1 8
S1 D1
l Dual N and P Channel MOSFET
2 7
l Surface Mount
G1 D1
VDSS 12V -12V
l Available in Tape & Reel
3 6
S2 D2
4
5
G2 D2
P-CHANNEL MOSFET
RDS(on) 0.034? 0.150?
Top View
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniqu

IRFI730G Datasheet (PDF)

1.1. irfi730g.pdf Size:917K _international_rectifier

PD — 94987
IRFI730GPbF
Lead-Free
2/9/04
Document Number: 91153 www.vishay.com
1
IRFI730GPbF
Document Number: 91153 www.vishay.com
2
IRFI730GPbF
Document Number: 91153 www.vishay.com
3
IRFI730GPbF
Document Number: 91153 www.vishay.com
4
IRFI730GPbF
Document Number: 91153 www.vishay.com
5
IRFI730GPbF
Document Number: 91153 www.vishay.com
6
IRFI730GPbF
TO-220 Full-Pak Pa

1.2. irfi730g sihfi730g.pdf Size:1544K _vishay

IRFI730G, SiHFI730G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
VDS (V) 400
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
RDS(on) (?)VGS = 10 V 1.0
f = 60 Hz)
RoHS*
Qg (Max.) (nC) 38
Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
Qgs (nC) 5.7 Dynamic dV/dt Rating
Qgd (nC) 22 Low Thermal Resistance
Lead (Pb)-free Available
Conf

 4.1. irfi734gpbf.pdf Size:846K _upd

IRFI734G, SiHFI734G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) 450
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
RDS(on) (Ω)VGS = 10 V 1.2
• Sink to Lead Creepage Dist. 4.8 mm
Qg (Max.) (nC) 45
• Dynamic dV/dt
Qgs (nC) 6.6
• Low Thermal Resistance
Qgd (nC) 24
• Lead (Pb)-free
Configuration Single
DESCRIPTION
D

4.2. irfi734gpbf.pdf Size:258K _international_rectifier

PD- 95752
IRFI734GPbF
Lead-Free
8/23/04
Document Number: 91154 www.vishay.com
1
IRFI734GPbF
Document Number: 91154 www.vishay.com
2
IRFI734GPbF
Document Number: 91154 www.vishay.com
3
IRFI734GPbF
Document Number: 91154 www.vishay.com
4
IRFI734GPbF
Document Number: 91154 www.vishay.com
5
IRFI734GPbF
Document Number: 91154 www.vishay.com
6
IRFI734GPbF
Peak Diode Recover

 4.3. irfi734g.pdf Size:241K _international_rectifier

IRF730S Datasheet (PDF)

1.1. irf730spbf.pdf Size:191K _upd-mosfet

IRF730S, SiHF730S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
• Surface Mount
RDS(on) ()VGS = 10 V 1.0
• Available in Tape and Reel
Qg (Max.) (nC) 38
• Dynamic dV/dt Rating
Qgs (nC) 5.7
• Repetitive Avalanche Rated
Qgd (nC) 22
• Fast Switching
• Ease of Paralleling
Configuration Sing

1.2. irf730s.pdf Size:895K _international_rectifier

PD — 95115
IRF730SPbF
Lead-Free
3/16/04
Document Number: 91048 www.vishay.com
1
IRF730SPbF
Document Number: 91048 www.vishay.com
2
IRF730SPbF
Document Number: 91048 www.vishay.com
3
IRF730SPbF
Document Number: 91048 www.vishay.com
4
IRF730SPbF
Document Number: 91048 www.vishay.com
5
IRF730SPbF
Document Number: 91048 www.vishay.com
6
IRF730SPbF
D2Pak Package Outline
D

 1.3. irf730s sihf730s.pdf Size:165K _vishay

IRF730S, SiHF730S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
Surface Mount
RDS(on) (?)VGS = 10 V 1.0
Available in Tape and Reel
Qg (Max.) (nC) 38
Dynamic dV/dt Rating
Qgs (nC) 5.7
Repetitive Avalanche Rated
Qgd (nC) 22
Fast Switching
Ease of Paralleling
Configuration Single
Simple Drive

1.4. irf730s.pdf Size:1398K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF730S (KRF730S)
■ Features
● VDS (V) =400V
● ID = 5.5 A (VGS = 10V)
● RDS(ON) < 1Ω (VGS = 10V)
● Fast switching
● Low thermal resistance
d
g
s
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 400
V
Gate-Source Voltage VGS ±20
Tc = 25℃ 5.5
Continuous Drain Current ID
Tc

IRF730AS Datasheet (PDF)

1.1. irf730alpbf irf730aspbf.pdf Size:199K _upd-mosfet

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
RDS(on) (Max.) ()VGS = 10 V 1.0
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 22
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 5.8
Ruggedness
Qgd (nC) 9.3
• Fully Characteriz

1.2. irf730as.pdf Size:149K _international_rectifier

PD-93772A
SMPS MOSFET
IRF730AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply 400V 1.0? 5.5A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Voltag

 1.3. irf730as-l.pdf Size:309K _international_rectifier

PD-95114
SMPS MOSFET
IRF730AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

IRF730SPBF Datasheet (PDF)

1.1. irf730spbf.pdf Size:191K _upd-mosfet

IRF730S, SiHF730S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
• Surface Mount
RDS(on) ()VGS = 10 V 1.0
• Available in Tape and Reel
Qg (Max.) (nC) 38
• Dynamic dV/dt Rating
Qgs (nC) 5.7
• Repetitive Avalanche Rated
Qgd (nC) 22
• Fast Switching
• Ease of Paralleling
Configuration Sing

3.1. irf730s.pdf Size:895K _international_rectifier

PD — 95115
IRF730SPbF
Lead-Free
3/16/04
Document Number: 91048 www.vishay.com
1
IRF730SPbF
Document Number: 91048 www.vishay.com
2
IRF730SPbF
Document Number: 91048 www.vishay.com
3
IRF730SPbF
Document Number: 91048 www.vishay.com
4
IRF730SPbF
Document Number: 91048 www.vishay.com
5
IRF730SPbF
Document Number: 91048 www.vishay.com
6
IRF730SPbF
D2Pak Package Outline
D

3.2. irf730s sihf730s.pdf Size:165K _vishay

IRF730S, SiHF730S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
Surface Mount
RDS(on) (?)VGS = 10 V 1.0
Available in Tape and Reel
Qg (Max.) (nC) 38
Dynamic dV/dt Rating
Qgs (nC) 5.7
Repetitive Avalanche Rated
Qgd (nC) 22
Fast Switching
Ease of Paralleling
Configuration Single
Simple Drive

 3.3. irf730s.pdf Size:1398K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF730S (KRF730S)
■ Features
● VDS (V) =400V
● ID = 5.5 A (VGS = 10V)
● RDS(ON) < 1Ω (VGS = 10V)
● Fast switching
● Low thermal resistance
d
g
s
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 400
V
Gate-Source Voltage VGS ±20
Tc = 25℃ 5.5
Continuous Drain Current ID
Tc

IRF7220 Datasheet (PDF)

1.1. irf7220gpbf.pdf Size:183K _upd-mosfet

PD -96258
IRF7220GPbF
HEXFET Power MOSFET
l Ultra Low On-Resistance
A
1 8
S D
l P-Channel MOSFET
VDSS = -14V
2 7
l Surface Mount
S D
l Available in Tape & Reel
3 6
S D
l Lead-Free
4 5
G D
l Halogen-Free
RDS(on) = 0.012Ω
Top View
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resi

1.2. irf7220pbf.pdf Size:155K _upd-mosfet

PD — 95172
IRF7220PbF
HEXFET Power MOSFET
l Ultra Low On-Resistance
A
1 8
S D
l P-Channel MOSFET
VDSS = -14V
2 7
l Surface Mount
S D
l Available in Tape & Reel
3 6
S D
l Lead-Free
4 5
G D
RDS(on) = 0.012Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silic

 1.3. irf7220.pdf Size:81K _international_rectifier

PD- 91850C
IRF7220
HEXFET Power MOSFET
Ultra Low On-Resistance
A
1 8
S D
P-Channel MOSFET
VDSS = -14V
2 7
Surface Mount
S D
Available in Tape & Reel
3 6
S D
4 5
G D
RDS(on) = 0.012?
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
pro

HFP730 Datasheet (PDF)

1.1. hfp730u.pdf Size:202K _update_mosfet

Oct 2013
BVDSS = 400 V
RDS(on) typ = 0.75
HFP730U
ID = 6.0 A
400V N-Channel MOSFET
TO-220
FEATURES
Originative New Design
Superior Avalanche Rugged Technology 1
2
3
Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 13 nC (Typ.)
Extended Safe Operating Area
Lowe

1.2. hfp730s.pdf Size:299K _update_mosfet

Nov 2013
BVDSS = 400 V
RDS(on) typ
HFP730S
ID = 6.0 A
400V N-Channel MOSFET
TO-220
FEATURES
Originative New Design 1
2
3
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lowe

 1.3. hfp730.pdf Size:340K _shantou-huashan

 Shantou Huashan Electronic Devices Co.,Ltd.
HFP730
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
TO-220
these power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
1- G 2-D 3

IRF720S Datasheet (PDF)

1.1. irf720spbf.pdf Size:199K _upd-mosfet

IRF720S, SiHF720S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 400
• Surface Mount
RDS(on) ()VGS = 10 V 1.8
• Available in Tape and Reel
Qg (Max.) (nC) 20
• Dynamic dV/dt Rating
Qgs (nC) 3.3
• Repetitive Avalanche Rated
• Fast Switching
Qgd (nC) 11
• Ease of Paralleling
Configuration Sing

1.2. irf720spbf.pdf Size:1163K _international_rectifier

PD — 95119
IRF720SPbF
Lead-Free
3/17/04
Document Number: 91044 www.vishay.com
1
IRF720SPbF
Document Number: 91044 www.vishay.com
2
IRF720SPbF
Document Number: 91044 www.vishay.com
3
IRF720SPbF
Document Number: 91044 www.vishay.com
4
IRF720SPbF
Document Number: 91044 www.vishay.com
5
IRF720SPbF
Document Number: 91044 www.vishay.com
6
IRF720SPbF
D2Pak Package Outline
D

 1.3. irf720s.pdf Size:363K _international_rectifier

IRF730APBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF730APBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 74
W

Предельно допустимое напряжение сток-исток (Uds): 400
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4.5
V

Максимально допустимый постоянный ток стока (Id): 5.5
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 22
nC

Время нарастания (tr): 22
ns

Выходная емкость (Cd): 103
pf

Сопротивление сток-исток открытого транзистора (Rds): 1
Ohm

Тип корпуса: TO-220AB

IRF730APBF
Datasheet (PDF)

1.1. irf730apbf.pdf Size:206K _upd-mosfet

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg results in Simple Drive
VDS (V) 400
Available
Requirement
RDS(on) (Ω)VGS = 10 V 1.0
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 22 Ruggedness
Qgs (nC) 5.8 • Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC) 9.3
• Effecti

3.1. irf730alpbf irf730aspbf.pdf Size:199K _upd-mosfet

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 400
Definition
RDS(on) (Max.) ()VGS = 10 V 1.0
• Low Gate Charge Qg Results in Simple Drive
Requirement
Qg (Max.) (nC) 22
• Improved Gate, Avalanche and Dynamic dV/dt
Qgs (nC) 5.8
Ruggedness
Qgd (nC) 9.3
• Fully Characteriz

3.2. irf730as.pdf Size:149K _international_rectifier

PD-93772A
SMPS MOSFET
IRF730AS/L
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply 400V 1.0? 5.5A
High speed power switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
D 2 TO-262
Pak
Avalanche Voltag

 3.3. irf730as-l.pdf Size:309K _international_rectifier

PD-95114
SMPS MOSFET
IRF730AS/LPbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
D 2 TO-262

3.4. irf730a.pdf Size:376K _international_rectifier

PD — 94976
SMPS MOSFET
IRF730APbF
HEXFET Power MOSFET
Applications
VDSS Rds(on) max ID
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply 400V 1.0? 5.5A
l High speed power switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Volt

 3.5. irf730a.pdf Size:927K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
?
RDS(on) = 1.0
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V

?
Lower RDS(ON) : 0.765 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Un

3.6. irf730a sihf730a.pdf Size:206K _vishay

IRF730A, SiHF730A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg results in Simple Drive
VDS (V) 400
Available
Requirement
RDS(on) (?)VGS = 10 V 1.0
RoHS*
Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 22 Ruggedness
Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC) 9.3
Effective Coss Spec

3.7. irf730a.pdf Size:234K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF730A
FEATURES
·Drain Current –I =5.5A@ T =25℃
D C
·Drain Source Voltage-
: V = 400V(Min)
DSS
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switch Mode Power Supply
·Uninterruptable Power Supply
·High speed power swi

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, SMG2301P
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, SMG2305P
, SMG2305PE
, SMG2306A
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, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.

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