Datasheet stmicroelectronics irf530

IRL530NS Datasheet (PDF)

1.1. irl530nspbf irl530nlpbf.pdf Size:460K _upd

PD- 95593
IRL530NSPbF
IRL530NLPbF
• Lead-Free
www.irf.com 1
07/21/04
IRL530NS/LPbF
2 www.irf.com
IRL530NS/LPbF
www.irf.com 3
IRL530NS/LPbF
4 www.irf.com
IRL530NS/LPbF
www.irf.com 5
IRL530NS/LPbF
6 www.irf.com
IRL530NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance

1.2. irl530ns.pdf Size:178K _international_rectifier

PD — 91349B
IRL530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRL530NS)
Low-profile through-hole (IRL530NL)
175C Operating Temperature
RDS(on) = 0.10?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resi

 1.3. irl530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRL530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF9530N Datasheet (PDF)

1.1. irf9530npbf.pdf Size:225K _upd-mosfet


IRF9530NPbF

l Advanced Process Technology
D
l Dynamic dv/dt Rating DSS
l 175°C Operating Temperature
l Fast Switching
DS(on) Ω
l P-Channel
G
l Fully Avalanche Rated
D
l Lead-Free
S
Description

1.2. irf9530nspbf.pdf Size:761K _upd-mosfet

PD- 95439
IRF9530NSPbF
IRF9530NLPbF
• Lead-Free
www.irf.com 1
04/26/05
IRF9530NS/LPbF
2 www.irf.com
IRF9530NS/LPbF
www.irf.com 3
IRF9530NS/LPbF
4 www.irf.com
IRF9530NS/LPbF
www.irf.com 5
IRF9530NS/LPbF
6 www.irf.com
IRF9530NS/LPbF
www.irf.com 7
IRF9530NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS

 1.3. irf9530n.pdf Size:113K _international_rectifier

PD — 91482C
IRF9530N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.20?
P-Channel
G
Fully Avalanche Rated
ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

1.4. irf9530ns.pdf Size:173K _international_rectifier

PD — 91523A
IRF9530NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9530NS)
VDSS = -100V
Low-profile through-hole (IRF9530NL)
175C Operating Temperature
RDS(on) = 0.20?
Fast Switching
G
P-Channel
ID = -14A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ex

 1.5. irf9530n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.2Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
relia

IRFI530N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFI530N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 33
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 11
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 29.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.11
Ohm

Тип корпуса: TO220

IRFI530N
Datasheet (PDF)

1.1. irfi530n.pdf Size:133K _international_rectifier

PD — 9.1353A
IRFI530N
PRELIMINARY
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = 100V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.11?
Fully Avalanche Rated
G
ID = 12A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-re

1.2. irfi530npbf.pdf Size:223K _international_rectifier

PD — 95419
IRFI530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Isolated Package
D
l High Voltage Isolation = 2.5KVRMS …
VDSS = 100V
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
RDS(on) = 0.11Ω
l Lead-Free G
ID = 12A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest

 3.1. irfi530g irfi530gpbf.pdf Size:932K _upd

IRFI530G, SiHFI530G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) 100
Available
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
RDS(on) (Ω)VGS = 10 V 0.16
RoHS*
COMPLIANT
• Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 33
• 175 °C Operating Temperature
Qgs (nC) 5.4
• Dynamic dV/dt Rating
Qgd (nC) 15
• Low T

3.2. irfi530g.pdf Size:158K _international_rectifier

Document Number: 90180 www.vishay.com
575
Document Number: 90180 www.vishay.com
576
Document Number: 90180 www.vishay.com
577
Document Number: 90180 www.vishay.com
578
Document Number: 90180 www.vishay.com
579
Document Number: 90180 www.vishay.com
580
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of i

Другие MOSFET… IRFI3710
, IRFI460
, IRFI4905
, IRFI510A
, IRFI520A
, IRFI520N
, IRFI5210
, IRFI530A
, 2SK170
, IRFI540A
, IRFI540N
, IRFI550A
, IRFI610A
, IRFI614A
, IRFI614G
, IRFI620A
, IRFI620G
.

IRL530NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRL530NS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 79
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 2
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 22.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm

Тип корпуса: D2PAK

IRL530NS
Datasheet (PDF)

1.1. irl530nspbf irl530nlpbf.pdf Size:460K _upd

PD- 95593
IRL530NSPbF
IRL530NLPbF
• Lead-Free
www.irf.com 1
07/21/04
IRL530NS/LPbF
2 www.irf.com
IRL530NS/LPbF
www.irf.com 3
IRL530NS/LPbF
4 www.irf.com
IRL530NS/LPbF
www.irf.com 5
IRL530NS/LPbF
6 www.irf.com
IRL530NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance

1.2. irl530ns.pdf Size:178K _international_rectifier

PD — 91349B
IRL530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRL530NS)
Low-profile through-hole (IRL530NL)
175C Operating Temperature
RDS(on) = 0.10?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resi

 1.3. irl530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRL530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

Другие MOSFET… IRL520N
, IRL520NL
, IRL520NS
, IRL521
, IRL530
, IRL530A
, IRL530N
, IRL530NL
, IRF9530
, IRL531
, IRL540
, IRL540A
, IRL540N
, IRL540NL
, IRL540NS
, IRL541
, IRL5602S
.

IRF530NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF530NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 70
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 37
nC

Время нарастания (tr): 22
ns

Выходная емкость (Cd): 130
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.09
Ohm

Тип корпуса: TO-220AB

IRF530NPBF
Datasheet (PDF)

1.1. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

3.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

3.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

 3.3. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

3.4. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

 3.5. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N,IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

3.6. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

IRFI530N Datasheet (PDF)

1.1. irfi530n.pdf Size:133K _international_rectifier

PD — 9.1353A
IRFI530N
PRELIMINARY
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = 100V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.11?
Fully Avalanche Rated
G
ID = 12A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-re

1.2. irfi530npbf.pdf Size:223K _international_rectifier

PD — 95419
IRFI530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Isolated Package
D
l High Voltage Isolation = 2.5KVRMS …
VDSS = 100V
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
RDS(on) = 0.11Ω
l Lead-Free G
ID = 12A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest

 3.1. irfi530g irfi530gpbf.pdf Size:932K _upd

IRFI530G, SiHFI530G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) 100
Available
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
RDS(on) (Ω)VGS = 10 V 0.16
RoHS*
COMPLIANT
• Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 33
• 175 °C Operating Temperature
Qgs (nC) 5.4
• Dynamic dV/dt Rating
Qgd (nC) 15
• Low T

3.2. irfi530g.pdf Size:158K _international_rectifier

Document Number: 90180 www.vishay.com
575
Document Number: 90180 www.vishay.com
576
Document Number: 90180 www.vishay.com
577
Document Number: 90180 www.vishay.com
578
Document Number: 90180 www.vishay.com
579
Document Number: 90180 www.vishay.com
580
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of i

IRF530NPBF Datasheet (PDF)

1.1. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

3.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

3.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

 3.3. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

3.4. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

 3.5. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N,IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

3.6. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF530N Datasheet (PDF)

1.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

1.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

 1.3. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

1.4. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

 1.5. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

1.6. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N,IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

1.7. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF530NL Datasheet (PDF)

3.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

3.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

 3.3. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

3.4. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

 3.5. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

3.6. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N,IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

3.7. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF530N Datasheet (PDF)

1.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

1.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

 1.3. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

1.4. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

 1.5. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

1.6. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N,IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

1.7. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF530S MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF530S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 88
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 14
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 26
nC

Время нарастания (tr): 34
ns

Выходная емкость (Cd): 250
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.16
Ohm

Тип корпуса: TO-263

IRF530S
Datasheet (PDF)

1.1. irf530s.pdf Size:197K _international_rectifier

IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
• Surface Mount
RDS(on) ()VGS = 10 V 0.16
• Available in Tape and Reel
Qg (Max.) (nC) 26
• Dynamic dV/dt Rating
Qgs (nC) 5.5
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
Qgd (nC) 11
• Fast Switching
Configu

1.2. irf530spbf.pdf Size:1851K _international_rectifier

PD- 95982
IRF530SPbF
Lead-Free
12/21/04
Document Number: 91020 www.vishay.com
1
IRF530SPbF
Document Number: 91020 www.vishay.com
2
IRF530SPbF
Document Number: 91020 www.vishay.com
3
IRF530SPbF
Document Number: 91020 www.vishay.com
4
IRF530SPbF
Document Number: 91020 www.vishay.com
5
IRF530SPbF
Document Number: 91020 www.vishay.com
6
IRF530SPbF
Peak Diode Recovery dv/d

 1.3. irf530s sihf530s.pdf Size:171K _vishay

IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
Surface Mount
RDS(on) (?)VGS = 10 V 0.16
Available in Tape and Reel
Qg (Max.) (nC) 26
Dynamic dV/dt Rating
Qgs (nC) 5.5
Repetitive Avalanche Rated
175 C Operating Temperature
Qgd (nC) 11
Fast Switching
Configuration Single
Eas

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.

IRF530S Datasheet (PDF)

1.1. irf530s.pdf Size:197K _international_rectifier

IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
• Surface Mount
RDS(on) ()VGS = 10 V 0.16
• Available in Tape and Reel
Qg (Max.) (nC) 26
• Dynamic dV/dt Rating
Qgs (nC) 5.5
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
Qgd (nC) 11
• Fast Switching
Configu

1.2. irf530spbf.pdf Size:1851K _international_rectifier

PD- 95982
IRF530SPbF
Lead-Free
12/21/04
Document Number: 91020 www.vishay.com
1
IRF530SPbF
Document Number: 91020 www.vishay.com
2
IRF530SPbF
Document Number: 91020 www.vishay.com
3
IRF530SPbF
Document Number: 91020 www.vishay.com
4
IRF530SPbF
Document Number: 91020 www.vishay.com
5
IRF530SPbF
Document Number: 91020 www.vishay.com
6
IRF530SPbF
Peak Diode Recovery dv/d

 1.3. irf530s sihf530s.pdf Size:171K _vishay

IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
Surface Mount
RDS(on) (?)VGS = 10 V 0.16
Available in Tape and Reel
Qg (Max.) (nC) 26
Dynamic dV/dt Rating
Qgs (nC) 5.5
Repetitive Avalanche Rated
175 C Operating Temperature
Qgd (nC) 11
Fast Switching
Configuration Single
Eas

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