C4106 транзистор характеристики

Биполярный транзистор 3DA4544O — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 3DA4544O

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 10
W

Макcимально допустимое напряжение коллектор-база (Ucb): 300
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO220F

3DA4544O
Datasheet (PDF)

3.1. 3da4544.pdf Size:29K _update_bjt

查询»3DA4544″供应商
华晶分立器件 3DA4544
高频放大管壳额定双极型晶体管
1 概述与特点
3DA4544 硅 NPN 型高频高压大功率晶体管 适用于彩色电视机色输出电路及行推动电路 其
特点如下
击穿电压高
反向漏电流小
饱和压降低
4.5
10 0.1
封装形式 TO-220F
2.7
2 电特性
2.1 极限值
3.2
除非另有

5.1. ztx458 3da458.pdf Size:226K _update

ZTX458(3DA458) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于中功率高电压电路。
Purpose: Medium power high voltage applications.
特点: 反向击穿电压高,集电极耗散功率大。
Features: High V , high P .
CEO C
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 400 V
CBO
V 400 V
CEO
V 5.0

5.2. ztx450 3da450.pdf Size:373K _update

ZTX450(3DA450) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于中功率放大。/Purpose: Medium power amplifier applications.
特点:高集电极直流电流和集电极耗散功率。/Features: High P and I .
C C
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 60 V
CBO
V 45 V
CEO
V 5.0 V
EBO
I 1.0 A
C

Другие транзисторы… FA1L3Z-L37
, FA1L3Z-L38
, KSC5802D
, KTC601UY
, NP061A3
, 2SD1710C
, 3DD2553
, 3DA4544R
, 2SC945
, 3DA4544Y
, CHT807PTQ
, CHT807PTR
, CHT807PTS
, FJP3305H2
, RD9FE-R
, RD9FE-T
, RD9FE-V
.

Биполярный транзистор 2SC4467 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4467

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 80
W

Макcимально допустимое напряжение коллектор-база (Ucb): 160
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120
V

Макcимальный постоянный ток коллектора (Ic): 8
A

Предельная температура PN-перехода (Tj): 125
°C

Граничная частота коэффициента передачи тока (ft): 20
MHz

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO218

2SC4467
Datasheet (PDF)

1.1. 2sc4467.pdf Size:169K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC4467 NPN EPITAXIAL SILICON TRANSISTOR
SILICON NPN TRIPLE
DIFFUSED PLANAR
TRANSISTOR
? DESCRIPTION
The UTC 2SC4467 is a silicon NPN triple diffused planar
transistor, it uses UTC’s advanced technology to provide the
customers with high DC current gain and high collector-base
breakdown voltage, etc.
The UTC 2SC4467 is suitable for audio and gen

1.2. 2sc4467.pdf Size:192K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC4467
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1694
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO C

 1.3. 2sc4467.pdf Size:24K _sanken-ele

2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)
Application : Audio and General Purpose
External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit
0.2
4.8
0.4
15.6
0.1
VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0
IEBO
VCEO 120 V VEB=6V 10max A
V(BR)C

1.4. 2sc4467.pdf Size:194K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4467
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V = 120V(Min)
(BR)CEO
·Good Linearity of h
FE
·Complement to Type 2SA1694
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MA

Другие транзисторы… 2SC4453
, 2SC4454
, 2SC4455
, 2SC446
, 2SC4462
, 2SC4463
, 2SC4464
, 2SC4466
, S8550
, 2SC447
, 2SC4470
, 2SC4471
, 2SC4473
, 2SC4474
, 2SC4475
, 2SC4476
, 2SC4477
.

2SC5589 Datasheet (PDF)

1.1. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

 4.3. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
R

4.4. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

 4.5. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.30.1
2.00.2
10
Absolute Maximum Ratings Ta =

4.6. 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.7. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H J

4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

4.9. 2sc5584.pdf Size:186K _inchange_semiconductor

isc Product Specification
isc Silicon NPN Power Transistor 2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc5585.pdf Size:204K _lge

2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Vol

4.11. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipatio

Биполярный транзистор 2SC4123 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4123

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимальный постоянный ток коллектора (Ic): 7
A

Предельная температура PN-перехода (Tj): 175
°C

Статический коэффициент передачи тока (hfe): 70

Корпус транзистора: TO218

2SC4123
Datasheet (PDF)

1.1. 2sc4123.pdf Size:93K _sanyo

Ordering number:EN2956
NPN Triple Diffused Planar Silicon Transistor
2SC4123
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed (tf=100ns typ).
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper dio

1.2. 2sc4123.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4123
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

 4.1. 2sc4124.pdf Size:98K _sanyo

Ordering number:EN2962
NPN Triple Diffused Planar Silicon Transistor
2SC4124
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
Adoption of MBIT process.
unit:mm
On-chip damper diode.
2039D
High breakdown voltage (VCBO=1500V).

High speed (tf=100ns typ).
16.0
5.6
3.4
High reliability (Adoption of HVP proces

4.2. 2sc4121.pdf Size:89K _sanyo

 4.3. 2sc4125.pdf Size:88K _sanyo

4.4. 2sc4126.pdf Size:47K _hitachi

2SC4126
Silicon NPN Epitaxial
Application
VHF and UHF wide band amplifier
Outline
MPAK-4
2
3
1
1. Collector
4
2. Emitter
3. Base
4. Emitter
2SC4126
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 11 V
Emitter to base voltage VEBO 2V
Collector current IC 50 mA
Collector power dissipation PC 150

 4.5. 2sc4124.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4124
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

4.6. 2sc4129.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4129
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PAR

4.7. 2sc4125.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4125
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for very high-definition color display horizontal
deflection output applicaitions.
ABSOLUTE MAXIMUM RATINGS(

Другие транзисторы… 2SC4116
, 2SC4117
, 2SC4118
, 2SC4119
, 2SC412
, 2SC4120
, 2SC4121
, 2SC4122
, BC548
, 2SC4124
, 2SC4125
, 2SC4126
, 2SC4127
, 2SC4128
, 2SC4129
, 2SC413
, 2SC4130
.

2SC5478 Datasheet (PDF)

1.1. 2sc5478.pdf Size:35K _panasonic

Power Transistors
2SC5478
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5 0.5 3.0 0.3
? 3.2 0.1
Features
5 5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
5
Wide area of safe operation (ASO)
5
4.0
5
2.0 0.2
1.1 0.1
Absolute Maximum Ratings (TC=25?C)
0.7 0.1
Paramet

4.1. 2sc5476.pdf Size:40K _sanyo

Ordering number:EN6069
NPN Epitaxial Planar Silicon Darlington Transistor
2SC5476
85V/3A Driver Applications
Applications Package Dimensions
Suitable for use in switching of L load (motor
unit:mm
drivers, printer hammer drivers, relay drivers).
2041A

Features
4.5
10.0
2.8
High DC current gain.
3.2
Large current capacity and wide ASO.
Contains a Zener diode of

4.2. 2sc5472 e.pdf Size:38K _panasonic

Transistor
2SC5472 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
2.1 0.1
0.425 1.25 0.1 0.425
Features
High transition frequency fT.
1
High gain of 8.2dB and low noise of 1.8dB at 3V.
Optimum for RF amplification of a portable telephone and
3
pager.
2
S-Mini type package, allowing downsizing of the equipment and
automa

 4.3. 2sc5472.pdf Size:52K _panasonic

Transistors
2SC5472
Silicon NPN epitaxial planer type
Unit: mm
For low-voltage low-noise high-frequency oscillation
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
High gain of 8.2 dB and low noise of 1.8 dB at 3 V
1 2
Optimum for RF amplification of a portable telephone and pager
(0.65) (0.65)
S-mini type package, allowing downsizing of the equipment a

4.4. 2sc5474 e.pdf Size:37K _panasonic

Transistor
2SC5474 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
1.6 0.15
0.4 0.8 0.1 0.4
Features
High transition frequency fT.
1
High gain of 8.9dB and low noise of 1.8dB at 3V.
Optimum for RF amplification of a portable telephone and
3
pager.
SS-Mini type package, allowing downsizing of the equipment
2
and automati

 4.5. 2sc5474.pdf Size:34K _panasonic

Transistor
2SC5474 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
1.6 0.15
0.4 0.8 0.1 0.4
Features
High transition frequency fT.
1
High gain of 8.9dB and low noise of 1.8dB at 3V.
Optimum for RF amplification of a portable telephone and
3
pager.
SS-Mini type package, allowing downsizing of the equipment
2
and automati

4.6. 2sc5473 e.pdf Size:38K _panasonic

Transistor
2SC5473 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
2.1 0.1
0.425 1.25 0.10 0.425
Features
High transition frequency fT.
High gain of 8.9dB and low noise of 1.8dB at 3V.
Optimum for RF amplification of a portable telephone and
pager.
S-Mini type package, allowing downsizing of the equipment and
automatic inse

4.7. 2sc5473.pdf Size:34K _panasonic

Transistor
2SC5473 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
2.1 0.1
0.425 1.25 0.10 0.425
Features
High transition frequency fT.
High gain of 8.9dB and low noise of 1.8dB at 3V.
Optimum for RF amplification of a portable telephone and
pager.
S-Mini type package, allowing downsizing of the equipment and
automatic inse

4.8. 2sc5470.pdf Size:42K _hitachi

2SC5470
Silicon NPN Triple Diffused
Character Display Horizontal Deflection Output
ADE-208-672 (Z)
1st. Edition
Oct. 1, 1998
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.15 sec(typ.) at fH=64kHz
Outline
TO3PFM
1. Base
2. Collector
1
3. Emitter
2
3
2SC5470
Absolute Maximum Ratings (Ta = 25 C)
Item Symbol Ratings Unit
Collector to base vol

4.9. 2sc5477.pdf Size:116K _isahaya

ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
http://www.idc-com.co.jp
6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN
??Keep safety in your circuit designs !
?
Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur

4.10. 2sc5477.pdf Size:779K _kexin

SMD Type Transistors
NPN Transistors
2SC5477
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=50mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

2SC4467 Datasheet (PDF)

1.1. 2sc4467.pdf Size:169K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC4467 NPN EPITAXIAL SILICON TRANSISTOR
SILICON NPN TRIPLE
DIFFUSED PLANAR
TRANSISTOR
? DESCRIPTION
The UTC 2SC4467 is a silicon NPN triple diffused planar
transistor, it uses UTC’s advanced technology to provide the
customers with high DC current gain and high collector-base
breakdown voltage, etc.
The UTC 2SC4467 is suitable for audio and gen

1.2. 2sc4467.pdf Size:192K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC4467
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1694
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO C

 1.3. 2sc4467.pdf Size:24K _sanken-ele

2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)
Application : Audio and General Purpose
External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit
0.2
4.8
0.4
15.6
0.1
VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0
IEBO
VCEO 120 V VEB=6V 10max A
V(BR)C

1.4. 2sc4467.pdf Size:194K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4467
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V = 120V(Min)
(BR)CEO
·Good Linearity of h
FE
·Complement to Type 2SA1694
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MA

2SC4977 Datasheet (PDF)

1.1. 2sc4977.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC4977
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max.)@ IC= 4.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are parti

4.1. 2sc4976.pdf Size:31K _sanyo

Ordering number : ENN5507B
2SA1875 / 2SC4976
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1875 / 2SC4976
High-Definition CRT Display
Video Output Applications
Features Package Dimensions
High fT : fT=400MHz(typ). unit : mm
High breakdown voltage : VCEO?200V(min). 2045B
Large current capacitance.
[2SA1875 / 2SC4976]
Small reverse transfer capacitance and excellent high
6.5

4.2. 2sc4976.pdf Size:1227K _kexin

SMD Type Transistors
NPN Transistors
2SC4976
TO-252
Unit: mm
+0.15
6.50-0.15
+0.1
2.30 -0.1
+0.2
5.30-0.2 +0.8
0.50 -0.7
■ Features
● High fT : fT=400MHz(typ).
● High breakdown voltage
● Large current capacitance. 0.127
+0.1
0.80-0.1
max
● Complementary to 2SA1875
+ 0.1
1 Base
2.3 0.60- 0.1
+0.15
4.60 -0.15
2 Collector
3 Emitter
■ Absolute Maximum Rati

Биполярный транзистор 2SC5253 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5253

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 50
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимальный постоянный ток коллектора (Ic): 6
A

Граничная частота коэффициента передачи тока (ft): 8
MHz

Статический коэффициент передачи тока (hfe): 9

Корпус транзистора: TO220

2SC5253
Datasheet (PDF)

4.1. 2sc5255.pdf Size:180K _toshiba

2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.2. 2sc5256ft.pdf Size:104K _toshiba



 4.3. 2sc5257.pdf Size:126K _toshiba



4.4. 2sc5256.pdf Size:164K _toshiba



 4.5. 2sc5259.pdf Size:182K _toshiba



4.6. 2sc5254.pdf Size:177K _toshiba

2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.7. 2sc5258.pdf Size:103K _toshiba



4.8. 2sc5251.pdf Size:35K _hitachi

2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.2 sec (typ)
Isolated package
TO-3PFM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector

4.9. 2sc5252.pdf Size:38K _hitachi

2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf ? 0.15 sec(typ.)
Isolated package
TO3PFM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit

4.10. 2sc5250.pdf Size:71K _hitachi

Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freet

4.11. 2sc5252.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5252
DESCRIPTION
·High speed switching
High breakdown voltage
VCBO = 1500 V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO
V Collector-Emitter Vo

4.12. 2sc5250.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5250
DESCRIPTION
·Silicon NPN diffused planar transistor
·High speed switching
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for display horizontal deflection output
Switching regulator and general purpose
AB

4.13. 2sc5259.pdf Size:1007K _kexin

SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

4.14. 2sc5254.pdf Size:1019K _kexin

SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC5682 Datasheet (PDF)

1.1. 2sc5682.pdf Size:28K _sanyo

Ordering number : ENN6608A
2SC5682
NPN Triple Diffused Planar Silicon Transistor
2SC5682
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.1. 2sc5684.pdf Size:126K _toshiba



4.2. 2sc5689.pdf Size:29K _sanyo

Ordering number : ENN6654A
2SC5689
NPN Triple Diffused Planar Silicon Transistor
2SC5689
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
On-chip damper diode. 16.0
3.

 4.3. 2sc5681.pdf Size:28K _sanyo

Ordering number : ENN6607A
2SC5681
NPN Triple Diffused Planar Silicon Transistor
2SC5681
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.4. 2sc5683.pdf Size:28K _sanyo

Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

 4.5. 2sc5680.pdf Size:28K _sanyo

Ordering number : ENN6652A
2SC5680
NPN Triple Diffused Planar Silicon Transistor
2SC5680
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

4.6. 2sc5686.pdf Size:75K _panasonic

Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
15.50.5 3.00.3
? 3.20.1
5?
5?
Features
High breakdown voltage: VCBO ? 2 000 V
High-speed switching: tf 4.7. 2sc5689.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5689
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO

2SC5686 Datasheet (PDF)

1.1. 2sc5686.pdf Size:75K _panasonic

Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
15.50.5 3.00.3
? 3.20.1
5?
5?
Features
High breakdown voltage: VCBO ? 2 000 V
High-speed switching: tf 4.1. 2sc5684.pdf Size:126K _toshiba



4.2. 2sc5689.pdf Size:29K _sanyo

Ordering number : ENN6654A
2SC5689
NPN Triple Diffused Planar Silicon Transistor
2SC5689
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
On-chip damper diode. 16.0
3.

 4.3. 2sc5681.pdf Size:28K _sanyo

Ordering number : ENN6607A
2SC5681
NPN Triple Diffused Planar Silicon Transistor
2SC5681
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.4. 2sc5682.pdf Size:28K _sanyo

Ordering number : ENN6608A
2SC5682
NPN Triple Diffused Planar Silicon Transistor
2SC5682
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

 4.5. 2sc5683.pdf Size:28K _sanyo

Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

4.6. 2sc5680.pdf Size:28K _sanyo

Ordering number : ENN6652A
2SC5680
NPN Triple Diffused Planar Silicon Transistor
2SC5680
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

4.7. 2sc5689.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5689
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO

2SC4123 Datasheet (PDF)

1.1. 2sc4123.pdf Size:93K _sanyo

Ordering number:EN2956
NPN Triple Diffused Planar Silicon Transistor
2SC4123
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed (tf=100ns typ).
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper dio

1.2. 2sc4123.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4123
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

 4.1. 2sc4124.pdf Size:98K _sanyo

Ordering number:EN2962
NPN Triple Diffused Planar Silicon Transistor
2SC4124
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
Adoption of MBIT process.
unit:mm
On-chip damper diode.
2039D
High breakdown voltage (VCBO=1500V).

High speed (tf=100ns typ).
16.0
5.6
3.4
High reliability (Adoption of HVP proces

4.2. 2sc4121.pdf Size:89K _sanyo

 4.3. 2sc4125.pdf Size:88K _sanyo

4.4. 2sc4126.pdf Size:47K _hitachi

2SC4126
Silicon NPN Epitaxial
Application
VHF and UHF wide band amplifier
Outline
MPAK-4
2
3
1
1. Collector
4
2. Emitter
3. Base
4. Emitter
2SC4126
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 11 V
Emitter to base voltage VEBO 2V
Collector current IC 50 mA
Collector power dissipation PC 150

 4.5. 2sc4124.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4124
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

4.6. 2sc4129.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4129
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PAR

4.7. 2sc4125.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4125
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for very high-definition color display horizontal
deflection output applicaitions.
ABSOLUTE MAXIMUM RATINGS(

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