2sc2625

2SC3686 Datasheet (PDF)

1.1. 2sc3686.pdf Size:92K _sanyo

Ordering number:EN1938A
NPN Triple Diffused Planar Silicon Transistor
2SC3686
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Applications Package Dimensions
Ultrahigh-definition color display horizontal deflec-
unit:mm
tion output.
2022A

Features
Fast speed (tf typ=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoptio

1.2. 2sc3686.pdf Size:99K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC3686
ESCRIPTION
·High breakdown voltage
·High reliability (adoption of HVP process).
·Fast speed
·Adoption of MBIT process.
·With TO-3PN package
APPLICATIONS
·Ultrahigh-definition color display horizontal
deflection output.
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base

 1.3. 2sc3686.pdf Size:198K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3686
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: V = 800V(Min)
CEO(SUS)
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for ultrahigh-definition color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM R

2SC2625 Datasheet (PDF)

1.1. 2sc2625b.pdf Size:238K _update

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

1.2. 2sc2625.pdf Size:129K _mospec

A
A
A

 1.3. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC2625
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T =25℃

2SC2624 Datasheet (PDF)

1.1. 2sc2624.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2624
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXI

4.1. 2sc2625b.pdf Size:238K _update

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

4.2. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

 4.3. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
Junct

4.4. 2sc2628.pdf Size:138K _mitsubishi

 4.5. 2sc2627.pdf Size:135K _mitsubishi

4.6. 2sc2629.pdf Size:135K _mitsubishi

4.7. 2sc2625.pdf Size:129K _mospec

A
A
A

4.8. 2sc2621 3da2621.pdf Size:231K _no

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

4.9. 2sc2626.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2626
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXI

4.10. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC2625
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T =25℃

4.11. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

2SC2954 Datasheet (PDF)

1.1. 2sc2954.pdf Size:103K _nec

DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
PACKAGE DIMENSIONS
low noise wide band amplifier and buffer amplifier of OSC, for VHF
(Unit: mm)
and CATV bnad.
4.50.1
FEATURES
1.50.1
1.60.2
Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4

1.2. 2sc2954.pdf Size:182K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor 2SC2954
DESCRIPTION
·Low Noise and High Gain
NF = 2.3 dB TYP. ; ︱S ︱2 = 20 dB TYP.
21e
@ f = 200 MHz
NF = 2.4 dB TYP. ; ︱S ︱2 = 12.5 dB TYP.
21e
@ f = 500 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low noise wide band amplifier and buffer
amplifie

 4.1. 2sc2958 2sc2959.pdf Size:80K _nec

DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES PACKAGE DRAWING (UNIT: mm)
Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion
correction
Complementary transistor with 2SA1221 and 2SA1222
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959

4.2. 2sc2951.pdf Size:21K _advanced-semi

2SC2951
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI 2SC2951 is a High
PACKAGE STYLE .200 2L FLG
Frequency Transistor Designed for
General Purpose Oscillator
Applications up to 10 GHz.
FEATURES:
• POSC = 630 mW Typical at 7.5 GHz



• Omnigold Metallization System



MAXIMUM RATINGS
IC 440 mA
VCE 16 V
VCB 25 V
PDISS 9.7

 4.3. 2sc2952.pdf Size:28K _advanced-semi

2SC2952
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The 2SC2592 is a High Frequency
Transistor Designed for General
Purpose VHF-UHF Amplifier
Applications.
MAXIMUM RATINGS
IC 250 mA
VCE 30 V
PDISS 3.5 W @ TC = 25 OC
TJ -65 to +200 OC
TSTG -65 to +200 OC
1 = Emitter 2 = Base
3 & 4 = Collector (Case)
50 OC/W
θJC
θ
θ
θ
CHARACTERISTICS TC = 25 OC

2SC5858 Datasheet (PDF)

4.1. 2sc5856.pdf Size:235K _update

2SC5856
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC S

4.2. 2sc5859.pdf Size:200K _toshiba

2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
HDTV, DIGITAL TV, PROJECTION TV
High Voltage : V = 1700 V
CBO
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 1700 V
Collector-Emi

 4.3. 2sc5855.pdf Size:194K _toshiba

2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING

4.4. 2sc5850.pdf Size:85K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

 4.5. 2sc5855.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5855
DESCRIPTION
·High speed switching
·High voltage
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for super high resolution
·Display color TV digital TV
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

2SC5859 Datasheet (PDF)

1.1. 2sc5859.pdf Size:200K _toshiba

2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
HDTV, DIGITAL TV, PROJECTION TV
High Voltage : V = 1700 V
CBO
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 1700 V
Collector-Emi

4.1. 2sc5856.pdf Size:235K _update

2SC5856
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC S

4.2. 2sc5855.pdf Size:194K _toshiba

2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING

 4.3. 2sc5850.pdf Size:85K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

4.4. 2sc5855.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5855
DESCRIPTION
·High speed switching
·High voltage
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for super high resolution
·Display color TV digital TV
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

Биполярный транзистор 2SC5859 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5859

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 210
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1700
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 750
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 23
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 2
MHz

Ёмкость коллекторного перехода (Cc): 320
pf

Статический коэффициент передачи тока (hfe): 4.5

Корпус транзистора: 2-21F2A

2SC5859
Datasheet (PDF)

1.1. 2sc5859.pdf Size:200K _toshiba

2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
HDTV, DIGITAL TV, PROJECTION TV
High Voltage : V = 1700 V
CBO
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 1700 V
Collector-Emi

4.1. 2sc5856.pdf Size:235K _update

2SC5856
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC S

4.2. 2sc5855.pdf Size:194K _toshiba

2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING

 4.3. 2sc5850.pdf Size:85K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

4.4. 2sc5855.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5855
DESCRIPTION
·High speed switching
·High voltage
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for super high resolution
·Display color TV digital TV
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC3619 Datasheet (PDF)

1.1. 2sc3619.pdf Size:213K _toshiba



1.2. 2sc3619.pdf Size:191K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3619
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 300V(Min)
(BR)CEO
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High voltage switching and amplifier applications.
·Color TV horizontal driver applications.
·Color TV chroma output applications.
ABSOL

 4.1. 2sc3613.pdf Size:241K _toshiba



4.2. 2sc3617.pdf Size:225K _nec

 4.3. 2sc3618.pdf Size:228K _nec

4.4. 2sc3616.pdf Size:168K _nec

 4.5. 2sc3615.pdf Size:164K _nec

4.6. 2sc3611.pdf Size:70K _panasonic

Power Transistors
2SC3611
Silicon NPN epitaxial planar type
Unit: mm
For video amplifier
8.0+0.5
0.1
3.20.2
? 3.160.1
Features
High transition frequency fT
Small collector output capacitance Cob
Wide current range
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings TC = 25C
0.750.1
0.50.1
Parameter Symbol

4.7. 2sc3617.pdf Size:1269K _kexin

SMD Type Transistors
NPN Transistors
2SC3617
SOT-89
Unit:mm
1.70 0.1
■ Features
● Collector Current Capability IC=0.3A
● Collector Emitter Voltage VCEO=50V
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 50
Collector — Emitter Voltage VCEO 50 V
Emitter — Base Voltage VE

4.8. 2sc3618.pdf Size:1258K _kexin

SMD Type Transistors
NPN Transistors
2SC3618
SOT-89
Unit:mm
1.70 0.1
■ Features
● Collector Current Capability IC=0.7A
● Collector Emitter Voltage VCEO=25V
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 25
Collector — Emitter Voltage VCEO 25 V
Emitter — Base Voltage VE

2SC2786 Datasheet (PDF)

1.1. 2sc2786.pdf Size:286K _nec

4.1. 2sc2783.pdf Size:117K _toshiba



4.2. 2sc2782.pdf Size:137K _toshiba

2SC2782
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Unit in mm
Output Power : Po = 80W (Min.)
(f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 36 V
Collector-Emitter Voltage VCEO 16 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 20 A

 4.3. 2sc2780.pdf Size:209K _nec

4.4. 2sc2784.pdf Size:185K _nec

 4.5. 2sc2787.pdf Size:228K _nec

4.6. 2sc2785.pdf Size:281K _nec

4.7. 2sc2788.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC2788
DESCRIPTION
·Low Collector Saturation Voltage
·Collector-Emitter Breakdown Voltage
·Good Linearity of h
FE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulators applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

4.8. 2sc2785.pdf Size:494K _lge

2SC2785
TO-92S Transistor (NPN)
1. EMITTER
TO-92S
2. COLLECTOR
3. BASE
1 2 3
Features

High voltage VCEO:50V
Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA)
Complementary to 2SA1175 PNP transistor
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Value Units
Parameter
VCBO 60 V
Collector-Base Voltage
VCEO Collector-Emitter Voltage 50 V
VEBO Emit

4.9. 2sc2780.pdf Size:1171K _kexin

SMD Type Transistors
NPN Transistors
2SC2780
SOT-89
Unit:mm
1.70 0.1
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=140V
● Complementary to 2SA1173
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 140
Collector — Emitter Voltage VCEO

2SC2634 Datasheet (PDF)

1.1. 2sc2634 e.pdf Size:42K _panasonic

Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SA1127
5.0 0.2 4.0 0.2
Features
Low noise voltage NV.
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1
1.27 1.27
Collector to emitter v

1.2. 2sc2634.pdf Size:38K _panasonic

Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SA1127
5.0 0.2 4.0 0.2
Features
Low noise voltage NV.
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1
1.27 1.27
Collector to emitter v

 4.1. 2sc2639.pdf Size:127K _toshiba



4.2. 2sc2638.pdf Size:128K _toshiba



 4.3. 2sc2632.pdf Size:34K _panasonic

Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1124
5.9 0.2 4.9 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7 0.1
2.54 0.15
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Rat

4.4. 2sc2632 e.pdf Size:38K _panasonic

Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1124
5.9 0.2 4.9 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7 0.1
2.54 0.15
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Rat

 4.5. 2sc2636 e.pdf Size:59K _panasonic

Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
Unit: mm
6.9 0.1 2.5 0.1
1.5
1.5 R0.9 1.0
Features
R0.9
High transition frequency fT.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.85
Absolute Maximum Ratings (Ta=25?C)
0.55 0.1 0.45 0.05
Parameter Symbol

4.6. 2sc2631 e.pdf Size:38K _panasonic

Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1123
5.0 0.2 4.0 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2

4.7. 2sc2631.pdf Size:34K _panasonic

Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1123
5.0 0.2 4.0 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2

4.8. 2sc2636.pdf Size:126K _panasonic

4.9. 2sc2630.pdf Size:135K _mitsubishi

Биполярный транзистор 2SC5252 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5252

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 50
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 15
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 3

Корпус транзистора: TO-3PFM

2SC5252
Datasheet (PDF)

1.1. 2sc5252.pdf Size:38K _hitachi

2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf ? 0.15 sec(typ.)
Isolated package
TO3PFM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit

1.2. 2sc5252.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5252
DESCRIPTION
·High speed switching
High breakdown voltage
VCBO = 1500 V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO
V Collector-Emitter Vo

 4.1. 2sc5255.pdf Size:180K _toshiba

2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.2. 2sc5256ft.pdf Size:104K _toshiba



 4.3. 2sc5257.pdf Size:126K _toshiba



4.4. 2sc5256.pdf Size:164K _toshiba



 4.5. 2sc5259.pdf Size:182K _toshiba



4.6. 2sc5254.pdf Size:177K _toshiba

2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.7. 2sc5258.pdf Size:103K _toshiba



4.8. 2sc5251.pdf Size:35K _hitachi

2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.2 sec (typ)
Isolated package
TO-3PFM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector

4.9. 2sc5250.pdf Size:71K _hitachi

Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freet

4.10. 2sc5250.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5250
DESCRIPTION
·Silicon NPN diffused planar transistor
·High speed switching
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for display horizontal deflection output
Switching regulator and general purpose
AB

4.11. 2sc5259.pdf Size:1007K _kexin

SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

4.12. 2sc5254.pdf Size:1019K _kexin

SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC2625B Datasheet (PDF)

1.1. 2sc2625b.pdf Size:238K _update

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

3.1. 2sc2625.pdf Size:129K _mospec

A
A
A

3.2. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC2625
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T =25℃

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