Транзистор tip127

TIP122F Datasheet (PDF)

1.1. tip122fp tip127fp.pdf Size:270K _update

TIP122FP
TIP127FP

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
3
2
molded isolated package. It is intented for use in
1
pow

1.2. tip122f 127f.pdf Size:94K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN
TIP127F PNP
TO-220FP
B
C
E
Designed for General-Purpose Amplifier and Low-Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 100 V
Collector -Emitter Voltage V

 1.3. tip122fp.pdf Size:217K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP122FP
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 3A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = 2.0V(Max)@ I = 3A
CE(sat) C
= 4.0V(Max)@ I = 5A
C
·Complement to Type TIP127FP
·Minimum Lot-to-Lot variations for robust device
performance and rel

TIP127L Datasheet (PDF)

1.1. tip127l.pdf Size:378K _blue-rocket-elect

TIP127L(BR3DA127LQ)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.
特征 / Features
与 TIP122L(BR3DA122LQ)互补。
Complement to TIP122L(BR3DA122LQ).
用途 / Applications
用于中功率线性开关放大。
Medium power linear switching applications.
内部等效电路 / E

4.1. tip122fp tip127fp.pdf Size:270K _update

TIP122FP
TIP127FP

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
3
2
molded isolated package. It is intented for use in
1
pow

4.2. tip127 3ca127.pdf Size:212K _update

TIP127(3CA127) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP122(3DA122)互补。
Features: Complement to TIP122(3DA122).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V
EBO

 4.3. tip127f 3ca127f.pdf Size:260K _update

TIP127F(3CA127F) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP122F(3DA122F)互补。
Features: Complement to TIP122F(3DA122F).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V

4.4. tip125 tip126 tip127.pdf Size:219K _mcc

MCC
Micro Commercial Components
TM
TIP125/126/127
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Silicon PNP
The complementary NPN types are the TIP121/2/3 respectively
Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates
RoHS Compliant. See ordering information)
Darlington
Epoxy meets UL 94

 4.5. tip127.pdf Size:21K _utc

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP127 is a PNP epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER SYMBOL VALUE UNIT
Storage Temperature Ts -55 ~ +150 C
Junction Temperature Tj 150 C
Total Power Dissipation PD 65 W
Col

4.6. tip127.pdf Size:70K _kec

SEMICONDUCTOR TIP127
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER A
R
APPLICATIONS.
S
FEATURES P
D
High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS
A 10.30 MAX
High Collector Breakdown Voltage : VCEO=-120V(Min.)
B 15.30 MAX
C 0.80
_
+
D Φ3.60 0.20
T
E 3.00
F 6.70 MAX
_
G 13.60 + 0.50

4.7. tip127.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP127
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -3A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.0V(Max)@ I = -3A
CE(sat) C
= -4.0V(Max)@ I = -5A
C
·Complement to Type TIP122
·Minimum Lot-to-Lot variations for robust device
performance and r

4.8. htip127.pdf Size:50K _hsmc

Spec. No. : HE6713
HI-SINCERITY
Issued Date : 1993.01.13
Revised Date : 2004.11.19
MICROELECTRONICS CORP.
Page No. : 1/5
HTIP127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
TO-220
The HTIP127 is designed for use in general purpose amplifier and low-speed
switching applications.
Darlington Schematic
C
Absolute Maximum Ratings (TA=25°C)
B
• Maximum Temperatures
Storage Temperatu

4.9. tip122-tip127 to220.pdf Size:102K _first_silicon

TIP120,121,122
SEMICONDUCTOR
TECHNICAL DATA
TIP125,126,127
TIP120,121,122 Darlington TRANSISTOR (NPN)
TO-220
TIP125,126,127 Darlington TRANSISTOR (PNP)
1.BASE
2.COLLECTOR
FEATURES
Medium Power Complementary silicon transistors
3.EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter TIP120 TIP121 TIP122 Units
TIP125 TIP126 TIP127
VCBO Collector-Base Vol

4.10. tip127.pdf Size:689K _kexin

DIP Type Transistors
PNP Darlington Transistors
TIP127 (KIP127)
TO-220
10.16 ± 0.20 ø3.18 ± 0.10 2.54 ± 0.20
(0.70)
■ Features
(1.00×45 )
● Collector Current Capability IC=-5A
● Collector Emitter Voltage VCEO=-100V
● Medium Power Complementary Silicon Transistors
MAX1.47
0.80 ± 0.10
1 2
3
#1
0.35 ± 0.10 +0.10
0.50 –0.05 2.76 ± 0.20
2.54TYP 2.54TYP
[2.54 ±

TIP127 Datasheet (PDF)

1.1. tip122fp tip127fp.pdf Size:270K _update

TIP122FP
TIP127FP

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
3
2
molded isolated package. It is intented for use in
1
pow

1.2. tip127 3ca127.pdf Size:212K _update

TIP127(3CA127) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP122(3DA122)互补。
Features: Complement to TIP122(3DA122).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V
EBO

 1.3. tip127f 3ca127f.pdf Size:260K _update

TIP127F(3CA127F) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP122F(3DA122F)互补。
Features: Complement to TIP122F(3DA122F).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V

1.4. tip125 tip126 tip127.pdf Size:219K _mcc

MCC
Micro Commercial Components
TM
TIP125/126/127
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Silicon PNP
The complementary NPN types are the TIP121/2/3 respectively
Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates
RoHS Compliant. See ordering information)
Darlington
Epoxy meets UL 94

 1.5. tip127.pdf Size:21K _utc

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP127 is a PNP epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER SYMBOL VALUE UNIT
Storage Temperature Ts -55 ~ +150 C
Junction Temperature Tj 150 C
Total Power Dissipation PD 65 W
Col

1.6. tip127.pdf Size:70K _kec

SEMICONDUCTOR TIP127
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER A
R
APPLICATIONS.
S
FEATURES P
D
High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS
A 10.30 MAX
High Collector Breakdown Voltage : VCEO=-120V(Min.)
B 15.30 MAX
C 0.80
_
+
D Φ3.60 0.20
T
E 3.00
F 6.70 MAX
_
G 13.60 + 0.50

1.7. tip127.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP127
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -3A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.0V(Max)@ I = -3A
CE(sat) C
= -4.0V(Max)@ I = -5A
C
·Complement to Type TIP122
·Minimum Lot-to-Lot variations for robust device
performance and r

1.8. htip127.pdf Size:50K _hsmc

Spec. No. : HE6713
HI-SINCERITY
Issued Date : 1993.01.13
Revised Date : 2004.11.19
MICROELECTRONICS CORP.
Page No. : 1/5
HTIP127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
TO-220
The HTIP127 is designed for use in general purpose amplifier and low-speed
switching applications.
Darlington Schematic
C
Absolute Maximum Ratings (TA=25°C)
B
• Maximum Temperatures
Storage Temperatu

1.9. tip127l.pdf Size:378K _blue-rocket-elect

TIP127L(BR3DA127LQ)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.
特征 / Features
与 TIP122L(BR3DA122LQ)互补。
Complement to TIP122L(BR3DA122LQ).
用途 / Applications
用于中功率线性开关放大。
Medium power linear switching applications.
内部等效电路 / E

1.10. tip122-tip127 to220.pdf Size:102K _first_silicon

TIP120,121,122
SEMICONDUCTOR
TECHNICAL DATA
TIP125,126,127
TIP120,121,122 Darlington TRANSISTOR (NPN)
TO-220
TIP125,126,127 Darlington TRANSISTOR (PNP)
1.BASE
2.COLLECTOR
FEATURES
Medium Power Complementary silicon transistors
3.EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter TIP120 TIP121 TIP122 Units
TIP125 TIP126 TIP127
VCBO Collector-Base Vol

1.11. tip127.pdf Size:689K _kexin

DIP Type Transistors
PNP Darlington Transistors
TIP127 (KIP127)
TO-220
10.16 ± 0.20 ø3.18 ± 0.10 2.54 ± 0.20
(0.70)
■ Features
(1.00×45 )
● Collector Current Capability IC=-5A
● Collector Emitter Voltage VCEO=-100V
● Medium Power Complementary Silicon Transistors
MAX1.47
0.80 ± 0.10
1 2
3
#1
0.35 ± 0.10 +0.10
0.50 –0.05 2.76 ± 0.20
2.54TYP 2.54TYP
[2.54 ±

Биполярный транзистор MJD127 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJD127

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 20
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 8
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 4
MHz

Ёмкость коллекторного перехода (Cc): 300
pf

Статический коэффициент передачи тока (hfe): 6000

Корпус транзистора: TO251

MJD127
Datasheet (PDF)

1.1. mjd127t4g.pdf Size:205K _upd

MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
 Surface Mount Replacements for 2N

1.2. mjd127g.pdf Size:205K _upd

MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
 Surface Mount Replacements for 2N

 1.3. mjd122re mjd127.pdf Size:284K _motorola

Order this document
MOTOROLA
by MJD122/D
SEMICONDUCTOR TECHNICAL DATA
NPN
*
MJD122
Complementary Darlington
PNP
MJD127*
Power Transistors
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
POWER TRANSISTORS
S

1.4. mjd122 mjd127.pdf Size:93K _st

MJD122
MJD127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX T4)
3
ELECTRICAL SIMILAR TO TIP122 AND
TIP127
1
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
DPAK
AMPLIFIER.
TO-252
(Suffix T4)

 1.5. njvmjd122 njvmjd127.pdf Size:142K _onsemi

MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements

1.6. mjd127.pdf Size:201K _lge

MJD127(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features

High DC current gain

Electrically similar to popular TIP127
Built-in a damper diode at E-C
TO-252-2L
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base V

Другие транзисторы… MJD112-1
, MJD112T4
, MJD117
, MJD117-1
, MJD117T4
, MJD122
, MJD122-1
, MJD122T4
, BEL187
, MJD127-1
, MJD127T4
, MJD13003
, MJD148
, MJD200
, MJD200-1
, MJD210
, MJD210-1
.

Примеры использования

Вариантов применения транзистора TIP122 и его схем включения достаточно много, их просто невозможно уместить в одну статью. Поэтому рассмотрим только некоторые схемы с его участием. Первая — усилитель звуковой частоты на 12 Вт, вторая — автоматический регулятор скорости вращения вентилятора.

Усилитель низкой частоты

Данный усилитель сделан на микросхеме операционном усилителе TL081 и двух выходных транзисторах TIP122 и TIP127. При нагрузке 8 Ом рассматриваемый усилитель способен обеспечить выходную мощность 12 Вт. Напряжение питания данного прибора должно находиться в пределах от 12 до 18 вольт.

Автоматический регулятор скорости вращения вентилятора

Рассматриваемый регулятор скорости вращения вентилятора можно использовать для предотвращения перегрева различной бытовой аппаратуры, например, компьютера. Его устанавливают в корпус охлаждаемого им устройства. Данная схема позволяет автоматически регулировать скорость вращения вентилятора, в зависимости от температуры воздуха.

Температурный датчик LM335 ориентирован на работу при  -40 до +1000 градусов цельсия. Напряжение на нем будет увеличиваться на 10 мВ вместе с ростом вокруг окружающей температуры. Напряжение с него подается на неинвертирующий вход операционного усилителя LM741. Со стабилитрона 1N4733 на инвертирующий вход микросхемы, через потенциометр, подается опорное напряжение 5.1 В.

В данной схеме потенциометр предназначен для регулирования порога срабатывания вентилятора. Транзистор находится в выходном каскаде усилителя и предназначен для непосредственного управления вентилятором.

TIP127FP Datasheet (PDF)

1.1. tip122fp tip127fp.pdf Size:270K _update

TIP122FP
TIP127FP

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
3
2
molded isolated package. It is intented for use in
1
pow

3.1. tip127f 3ca127f.pdf Size:260K _update

TIP127F(3CA127F) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP122F(3DA122F)互补。
Features: Complement to TIP122F(3DA122F).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V

 4.1. tip127 3ca127.pdf Size:212K _update

TIP127(3CA127) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP122(3DA122)互补。
Features: Complement to TIP122(3DA122).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V
EBO

4.2. tip125 tip126 tip127.pdf Size:219K _mcc

MCC
Micro Commercial Components
TM
TIP125/126/127
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Silicon PNP
The complementary NPN types are the TIP121/2/3 respectively
Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates
RoHS Compliant. See ordering information)
Darlington
Epoxy meets UL 94

 4.3. tip127.pdf Size:21K _utc

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP127 is a PNP epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER SYMBOL VALUE UNIT
Storage Temperature Ts -55 ~ +150 C
Junction Temperature Tj 150 C
Total Power Dissipation PD 65 W
Col

4.4. tip127.pdf Size:70K _kec

SEMICONDUCTOR TIP127
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER A
R
APPLICATIONS.
S
FEATURES P
D
High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS
A 10.30 MAX
High Collector Breakdown Voltage : VCEO=-120V(Min.)
B 15.30 MAX
C 0.80
_
+
D Φ3.60 0.20
T
E 3.00
F 6.70 MAX
_
G 13.60 + 0.50

 4.5. tip127.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP127
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -3A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.0V(Max)@ I = -3A
CE(sat) C
= -4.0V(Max)@ I = -5A
C
·Complement to Type TIP122
·Minimum Lot-to-Lot variations for robust device
performance and r

4.6. htip127.pdf Size:50K _hsmc

Spec. No. : HE6713
HI-SINCERITY
Issued Date : 1993.01.13
Revised Date : 2004.11.19
MICROELECTRONICS CORP.
Page No. : 1/5
HTIP127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
TO-220
The HTIP127 is designed for use in general purpose amplifier and low-speed
switching applications.
Darlington Schematic
C
Absolute Maximum Ratings (TA=25°C)
B
• Maximum Temperatures
Storage Temperatu

4.7. tip127l.pdf Size:378K _blue-rocket-elect

TIP127L(BR3DA127LQ)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.
特征 / Features
与 TIP122L(BR3DA122LQ)互补。
Complement to TIP122L(BR3DA122LQ).
用途 / Applications
用于中功率线性开关放大。
Medium power linear switching applications.
内部等效电路 / E

4.8. tip122-tip127 to220.pdf Size:102K _first_silicon

TIP120,121,122
SEMICONDUCTOR
TECHNICAL DATA
TIP125,126,127
TIP120,121,122 Darlington TRANSISTOR (NPN)
TO-220
TIP125,126,127 Darlington TRANSISTOR (PNP)
1.BASE
2.COLLECTOR
FEATURES
Medium Power Complementary silicon transistors
3.EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter TIP120 TIP121 TIP122 Units
TIP125 TIP126 TIP127
VCBO Collector-Base Vol

4.9. tip127.pdf Size:689K _kexin

DIP Type Transistors
PNP Darlington Transistors
TIP127 (KIP127)
TO-220
10.16 ± 0.20 ø3.18 ± 0.10 2.54 ± 0.20
(0.70)
■ Features
(1.00×45 )
● Collector Current Capability IC=-5A
● Collector Emitter Voltage VCEO=-100V
● Medium Power Complementary Silicon Transistors
MAX1.47
0.80 ± 0.10
1 2
3
#1
0.35 ± 0.10 +0.10
0.50 –0.05 2.76 ± 0.20
2.54TYP 2.54TYP
[2.54 ±

MJD127 Datasheet (PDF)

1.1. mjd127t4g.pdf Size:205K _upd

MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
 Surface Mount Replacements for 2N

1.2. mjd127g.pdf Size:205K _upd

MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
 Surface Mount Replacements for 2N

 1.3. mjd122re mjd127.pdf Size:284K _motorola

Order this document
MOTOROLA
by MJD122/D
SEMICONDUCTOR TECHNICAL DATA
NPN
*
MJD122
Complementary Darlington
PNP
MJD127*
Power Transistors
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
POWER TRANSISTORS
S

1.4. mjd122 mjd127.pdf Size:93K _st

MJD122
MJD127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX T4)
3
ELECTRICAL SIMILAR TO TIP122 AND
TIP127
1
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
DPAK
AMPLIFIER.
TO-252
(Suffix T4)

 1.5. njvmjd122 njvmjd127.pdf Size:142K _onsemi

MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements

1.6. mjd127.pdf Size:201K _lge

MJD127(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features

High DC current gain

Electrically similar to popular TIP127
Built-in a damper diode at E-C
TO-252-2L
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base V

MJD122G Datasheet (PDF)

1.1. mjd122g.pdf Size:205K _upd

MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
 Surface Mount Replacements for 2N

4.1. mjd122t4g.pdf Size:205K _upd

MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
 Surface Mount Replacements for 2N

4.2. mjd122re mjd127.pdf Size:284K _motorola

Order this document
MOTOROLA
by MJD122/D
SEMICONDUCTOR TECHNICAL DATA
NPN
*
MJD122
Complementary Darlington
PNP
MJD127*
Power Transistors
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
POWER TRANSISTORS
S

 4.3. mjd122 mjd127.pdf Size:93K _st

MJD122
MJD127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX T4)
3
ELECTRICAL SIMILAR TO TIP122 AND
TIP127
1
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
DPAK
AMPLIFIER.
TO-252
(Suffix T4)

4.4. njvmjd122 njvmjd127.pdf Size:142K _onsemi

MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
http://onsemi.com
DPAK For Surface Mount Applications
SILICON
Designed for general purpose amplifier and low speed switching
POWER TRANSISTOR
applications.
8 AMPERES
100 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements

 4.5. mjd122 7.pdf Size:403K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD122 NPN
MJD127 PNP
DPAK (TO-252)
Plastic Package
Designed for General Purpose Amplifier and Low Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage V

4.6. mjd122.pdf Size:163K _lge

MJD122(NPN)
TO-251/TO-525-2L Transistor
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features

High DC current gain
Electrically similar to popular TIP122

Built-in a damper diode at E-C
TO-252-2L
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Vol

4.7. mjd122.pdf Size:664K _wietron

MJD122
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE
3
2.COLLECTOR
2
3.EMITTER 1
Features:
* High DC current gain
D-PAK(TO-252)
* Electrically similar to popular TIP122
* Built-in a damper diode at E-C
ABSOLUTE MAXIMUM RATINGS (TA=25?C)
Rating Symbol Value Unit
VCBO
Collector-Base Voltage 100 V
VCEO
100 V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage 5.0 V

4.8. mjd122.pdf Size:451K _first_silicon

SEMICONDUCTOR
MJD122
TECHNICAL DATA
NPN Silicon Darlington Transistor
MJD122I
A
I
FEATURES
C
J
∙ High DC Current Gain
∙ Electrically Similar to Popular TIP122
DIM MILLIMETERS
A 6.50 ± 0.2
∙ Built-in a Damper Diode at E-C
B 5.60 ± 0.2
C 5.20 ± 0.2
D 1.50 ± 0.2
We declare that the material of
E 2.70 ± 0.2
F 2.30 ± 0.1
product compliance with RoHS requirements.

4.9. mjd122i.pdf Size:421K _first_silicon

SEMICONDUCTOR
MJD122I
TECHNICAL DATA
NPN Silicon Darlington Transistor
MJD122I
TO-251-3L
FEATURES
∙ High DC Current Gain
1.BASE
∙ Electrically Similar to Popular TIP122
∙ Built-in a Damper Diode at E-C
2.COLLECTOR
3.EMITTER
We declare that the material of
product compliance with RoHS requirements.
Equivalent Circuit
C
B
R1 R2
R1 ≅ 8kΩ
E
R2 ≅ 0.12kΩ
MAXI

Распиновка

Цоколевка у TIP127 следующая. Большинство фирм производителей изготавливают данный транзистор в корпусе ТО-220 с жесткими выводами. Материал корпуса пластмасса. Первый вывод слева, если смотреть со стороны маркировки является базой, второй коллектором, третий эмиттером. Коллектором также является металлическое основание.

Но есть и исключения из правил. Так, компания Unisonic Technologies выпускает данный прибор в другом пластовом корпусе ТО-126. Первая ножка рассматриваемого устройства – эмиттер, вторая – коллектор, третья – база.

Маркировка

На лицевой стороне корпуса транзистора наносится маркировка. На ней расположены такие сведения:

  • название устройства (TIP127);
  • буква G означает, что прибор не содержит свинца;
  • А – место сборки;
  • год выпуска;
  • рабочая неделя.
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