Главная > Дополнительно > Транзистор d1555

Транзистор d1555

Содержание

1 2SB1344 Datasheet (PDF)
2 Замена и эквиваленты
3 2SC5276 Datasheet (PDF)
4 2SD2058Y Datasheet (PDF)
5 2SD2544 Datasheet (PDF)
6 3DD5011 Datasheet (PDF)
7 Биполярный транзистор BUL6823 — описание производителя. Основные параметры. Даташиты.
8 BUL6823 Datasheet (PDF)
9 BUL6823 Datasheet (PDF)
10 2SD2689LS Datasheet (PDF)
11 2SD2396 Datasheet (PDF)
12 3DD5036 Datasheet (PDF)
13 2SD5703 Datasheet (PDF)
14 3DD5023 Datasheet (PDF)
15 3DD5038 Datasheet (PDF)
16 2SD2549 Datasheet (PDF)

2SB1344 Datasheet (PDF)

1.1. 2sb1344.pdf Size:38K _rohm

2SB1344
Transistors
Transistors
2SD2025
(94L-374-B403)
(94L-969-D403)
299

1.2. 2sb1344.pdf Size:214K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1344
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -100V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Complement to Type 2SD2025
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM

4.1. 2sb1340.pdf Size:38K _rohm

2SB1340
Transistors
Transistors
2SD1889
(96-650-B88)
(96-765-D88)
288

4.2. 2sb1342.pdf Size:39K _rohm

2SB1474 / 2SB1342
Transistors
Transistors
2SD1933
(94S-181-B400)
(94L-906-D400)
298

4.3. 2sb1340 1-2.pdf Size:58K _rohm

4.4. 2sb1347.pdf Size:53K _panasonic

Power Transistors
2SB1347
Silicon PNP triple diffusion planar type
For high power amplification
Unit: mm
Complementary to 2SD2029
? 3.3 0.2
20.0 0.5 5.0 0.3
3.0
Features
Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
Wide area of safe operation (ASO)
1.5
High transition frequency fT
Optimum for the output stage of a HiFi audio amplifier

4.5. 2sb1340.pdf Size:214K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1340
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -120V(Min)
(BR)CEO
·High DC Current Gain-
: h = 2000(Min)@ (V = -3V, I = -2A)
FE CE C
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage -120 V
CB

4.6. 2sb1347.pdf Size:219K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1347
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -160V(Min)
(BR)CEO
·Wide Area of Safe Operation
·Complement to Type 2SD2029
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Optimum for the output stage of a HiFi audio amplifier
ABSOLUTE MAXIMUM RATING

4.7. 2sb1341.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1341
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -80V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL P

4.8. 2sb1342.pdf Size:215K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1342
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -80V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Complement to Type 2SD1933
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM

4.9. 2sb1345.pdf Size:218K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1345
DESCRIPTION
·Low Collector Saturation Voltage-
: V = -2.0V(Min) @I = -5A
CE(sat) C
·Good Linearity of h
FE
·Complement to Type 2SD2062
·With TO-3PN package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power driver and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

4.10. 2sb1346.pdf Size:217K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SB1346
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -60V(Min)
(BR)CEO
·Good Linearity of h
FE
·Wide Area of Safe Operation
·Complement to Type 2SD2027
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAX

4.11. 2sb1343.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor 2SB1343
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -100V(Min)
(BR)CEO
·High DC Current Gain-
: h = 1000(Min)@ (V = -3V, I = -2A)
FE CE C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL

Замена и эквиваленты

Кт807б

Бывает, что вышедший из строя компонент уже не продается. Поэтому радиолюбители подбирают транзистор, который похож по своим техническим характеристикам на неисправный или ищут его аналог. Для поиска аналогов используют информацию из даташит на устройство и приведенные в нем технические характеристики.

Полные аналоги с d1555 по корпусу, его распиновке и техническому описанию, имеют следующие импортные транзисторы: 2SC42943; 2SC4744; BU508D; D1651; D2095; D2195; ECG2331. Можно подобрать похожий по характеристикам, например d5703, как показано на видео ниже о подборе строчника.

Подходящей замены из отечественных устройств для данного импульсника нет. Некоторые умельцы используют в качестве альтернативы, на отдельных вариантах схем, советский КТ838А. Это очень сомнительное решение, вместе с которым надо учесть отсутствие у этого него защитного диода, резистора и при этом наличие большого металлического корпуса.

2SC5276 Datasheet (PDF)

1.1. 2sc5276.pdf Size:136K _sanyo

Ordering number:EN5186
NPN Epitaxial Planar Silicon Transistor
2SC5276
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features Package Dimensions
Low noise : NF=0.9dB typ (f=1GHz).
unit:mm
: NF=1.4dB typ (f=1.5GHz).
2110A
2
High gain : ? S21e? =11dB typ (f=1.5GHz).

1.9
High cutoff frequency : fT=11GHz typ.
0.95 0.95
Low-voltage, low-current operation
0.4

4.1. 2sc5277a-2-tl-e.pdf Size:403K _update

Ordering number : ENA1075A
2SC5277A
RF Transistor
http://onsemi.com
10V, 30mA, fT=8GHz, NPN Single SMCP
Features
• Low-noise
: NF=0.9dB typ (f=1GHz)
: NF=1.4dB typ (f=1.5GHz)
• High gain ⏐ ⏐2
: S21e =10dB typ (f=1.5GHz)
• High cut-off frequency : fT=8GHz typ
• Low-voltage, low-current operation (VCE=1V, IC=1mA)
: fT=3.5GHz typ
: S21e =5.5dB typ (f=1.5GHz)
⏐

4.2. 2sc5279.pdf Size:124K _toshiba

4.3. 2sc5275.pdf Size:136K _sanyo

Ordering number:EN5185
NPN Epitaxial Planar Silicon Transistor
2SC5275
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features Package Dimensions
Low noise : NF=0.9dB typ (f=1GHz).
unit:mm
: NF=1.4dB typ (f=1.5GHz).
2018B
2
High gain : ? S21e? =10dB typ (f=1.5GHz).

High cutoff frequency : fT=11GHz typ.
0.4
Low-voltage, low-current operation
0.16
3
(VCE=

4.4. 2sc5277.pdf Size:134K _sanyo

Ordering number:EN5187
NPN Epitaxial Planar Silicon Transistor
2SC5277
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features Package Dimensions
Low noise : NF=0.9dB typ (f=1GHz).
unit:mm
: NF=1.4dB typ (f=1.5GHz).
2106A
2
High gain : ? S21e? =10dB typ (f=1.5GHz).

High cutoff frequency : fT=11GHz typ.
0.75
0.3
0.6
Low-voltage, low-current operation
(VC

4.5. 2sc5277a.pdf Size:58K _sanyo

Ordering number : ENA1075 2SC5277A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
UHF to S-Band Low-Noise Amplifier
2SC5277A
OSC Applications
Features
Low-noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
High gain : ?S21e?2=10dB typ (f=1.5GHz).
High cut-off frequency : fT=8GHz typ.
Low-voltage, low-current operation (VCE=1V, IC=1mA).
: fT=3.5G

4.6. 2sc5274.pdf Size:20K _rohm

Transistors 2SC5274
(96-203-C329)
304

4.7. 2sc5270.pdf Size:35K _panasonic

Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5 0.5 3.0 0.3
? 3.2 0.1
Features
5 5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
5
Wide area of safe operation (ASO)
5
4.0
5
2.0 0.2
1.1 0.1
Absolute Maximum Ratings (TC=25?C)
0.7 0.

4.8. 2sc5273.pdf Size:42K _hitachi

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

4.9. 2sc5271.pdf Size:169K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC5271
DESCRIPTION
·With TO-220F package
APPLICATIONS
·For resonant switching regulator and
general purpose applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base vo

4.10. 2sc5271.pdf Size:15K _sanken-ele

2SC5271
Silicon NPN Triple Diffused Planar Transistor
Application : Resonant Switching Regulator and General Purpose
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)
Symbol 2SC5271 Symbol Conditions 2SC5271 Unit
Unit
0.2
4.2
0.2
10.1
c0.5
2.8
VCBO 300 ICBO VCB=300V 100max A
V
VCEO 200 IEBO VEB=7V 100max A
V
VEBO 7 V(BR

4.11. 2sc5271.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5271
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 200V(Min)
(BR)CEO
·Low Saturation Voltage-
: V = 1.0V(Max)@ (I = 2.5A, I = 0.5A)
CE(sat) C B
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for resonant switching regulator and general
purpose applications.
ABSOLUTE MAXIMUM

2SD2058Y Datasheet (PDF)

C5353 транзистор характеристики

1.1. 2sd2058g 2sd2058o 2sd2058y.pdf Size:290K _update_bjt

www.DataSheet4U.com
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2058
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage:
VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A
·Collector power dissipation:
PC=25W(TC=25ı)
APPLICATIONS
·With general purpose applications
PINNING
PIN DESCRIPTION
1 Base
2 Co

3.1. 2sc3882s 2sc4368 2sc4369 2sc4371 2sc4377 2sd1351a 2sd2058a bf599 bfq31 bfs20 bu508a bu806 buv48a buv48c kta1242 kta940.pdf Size:495K _update_bjt

3.2. 2sd2058.pdf Size:194K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2058
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 60V (Min)
(BR)CEO
·Collector Power Dissipation
: P = 25 W(Max)
C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNI

2SD2544 Datasheet (PDF)

Транзистор h945

1.1. 2sd2544.pdf Size:51K _panasonic

Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
5.0 0.1
Features
10.0 0.2 1.0
High foward current transfer ratio hFE
90
Satisfactory linearity of foward current transfer ratio hFE
Allowing supply with the radial taping
1.2 0.1 C1.0
2.25 0.2
Absolute Maximum Ratings (TC=25?C)
0.65 0.1

4.1. 2sd2549.pdf Size:42K _panasonic

Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
Features
High forward current transfer ratio hFE which has satisfactory
4.6 0.2
9.9 0.3
2.9 0.2
linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
? 3.2 0.1
one screw
1.4 0.2
Absolute Maximum Ratings (TC=

4.2. 2sd254.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD254
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 70V(Min)
(BR) CEO
·Collector Power Dissipation-
: P = 20W @T = 25℃
C C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMU

4.3. 2sd2549.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2549
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 80V(Min)
(BR)CEO
·Low Collector Saturation Voltgae-
: V = 0.7V(Max.)@ I = 3A
CE(sat) C
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =2

3DD5011 Datasheet (PDF)

1.1. 3dd5011.pdf Size:235K _update

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION
R
3DD5011
封装 Package
主要参数 MAIN CHARACTERISTICS
TO-3P(H)IS
BVCBO 900V
IC 10 A
VCE(sat) 0.5 V(max)
tf 0.3 μs(max)
APPLICATIONS
用途
Switching power supply
彩色电视机开关电源
for color TV.
电路
产品特性 FEATURES 1 2 3

5.1. 3dd5036.pdf Size:144K _update

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY
R
3DD5036
封装 Package
主要参数 MAIN CHARACTERISTICS
TO-3P(H)IS
1700 V
BV
CBO
8 A
I
C
3 V(max)
V
CE(sat)
0.6 μs(max)
t
f
用途 APPLICATIONS
彩色电视机行输出电路 Horizontal deflection
output for color TV.
1 2 3
FEATURES

5.2. 3dd5038.pdf Size:147K _update

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY
R
3DD5038
封装 Package
主要参数 MAIN CHARACTERISTICS
TO-3P(H)IS
1200 V
BV
CBO
10 A
I
C
0.5 V(max)
V
CE(sat)
t 0.3 μs(max)
f
APPLICATIONS
用途
Switching power supply
彩色电视机开关电源
for color TV.
电路
1 2 3
产品特

5.3. 3dd5040.pdf Size:152K _update_bjt

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY
R
3DD5040
封装 Package
主要参数 MAIN CHARACTERISTICS
TO-3P(H)IS
1700 V
BV
CBO
22 A
I
C
3 V(max)
V
CE(sat)
t 0.3 μs(max)
f
APPLICATIONS
用途
Horizontal deflection
数字、
高清彩色电视机
output for HDTV
行输出电路
1 2

5.4. 3dd5027.pdf Size:368K _update_bjt

NPN 型高压功率开关晶体管
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R
3DD5027
主要参数 MAIN CHARACTERISTICS
封装 Package
IC 3A
VCEO 800V
PC(TO-220) 50W
用途 APPLICATIONS
节能灯 Energy-saving ligh
电子镇流器 Electronic ballasts
高频开关电源 High frequency switching power
高频功率变换 supply
一般功率放大电路

5.5. 3dd5039.pdf Size:146K _update_bjt

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY
R
3DD5039
封装 Package
主要参数 MAIN CHARACTERISTICS
TO-220HF
900 V
BV
CBO
6 A
I
C
1.0 V(max)
V
CE(sat)
t 0.5 μs(max)
f
APPLICATIONS
用途
Switching power supply
彩色电视机开关电源
for color TV.
电路
1 2 3
产品特性 F

5.6. 3dd5032.pdf Size:213K _jilin_sino

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY
R
3DD5032
封装 Package
主要参数 MAIN CHARACTERISTICS
TO-3P(H)IS
1500 V
BVCBO
8 A
Ic
3 V(max)
Vce(sat)
1 μs(max)
tf
用途 APPLICATIONS
彩色电视机行输出电路 Horizontal deflection
output for color TV.
B C E
FEATURES
产品特性

5.7. 3dd5024p.pdf Size:227K _jilin_sino

低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION
R
3DD5024P
主要参数 MAIN CHARACTERISTICS
封装 Package
TO-220HF
BVCBO 1500V
IC 8.0 A
VCE(sat) 3.0V(max)
tf 1.0 μs(max)
APPLICATIONS
用途
Horizontal deflection output
彩色电视机行输出电
for color TV.
路
1 2 3
等效电路 EQUIVAL

5.8. 3dd5023.pdf Size:207K _blue-rocket-elect

3DD5023 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途：用于彩色电视机行输出。
Application: Color TV Horizontal deflection output applications
特点:击穿电压高、漏电流小；开关速度快,饱和压降低，电流特性好。
Features: High breakdown voltage、Low drain current、High switching speed、Low saturation
voltage、Excellent current characte

5.9. 3dd5024.pdf Size:207K _blue-rocket-elect

3DD5024 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途：用于彩色电视机行输出。
Application: Color TV Horizontal deflection output applications
特点:击穿电压高、漏电流小；开关速度快,饱和压降低，电流特性好。
Features: High breakdown voltage、Low drain current、High switching speed、Low saturation
voltage、Excellent current characte

5.10. 3dd50.pdf Size:153K _china

3DD50/3DD51 型 NPN 硅低频大功率晶体管
规范值
参数符号测试条件单位
A B C D E F
PCM TC=75℃ 1 W
ICM 1 A
极
Tjm 175 ℃
限
Tstg -55~150 ℃
值
VCE=10V
Rth 100 ℃/W
IC=0.1A
V(BR)CBO ICB=1mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V
V(BR)CEO ICE=1mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V
V(BR)EBO IEB=1mA ≥5.0 V
ICBO VCB=20V ≤0.2 mA

5.11. 3dd505.pdf Size:37K _china

Shaanxi Qunli Electric Co., Ltd 11:54:41
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
2012-8-1
3DD505,BU104
NPN Silicon Low Frequency High Power Transistor
Features:
1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability.
2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611
3. Use for Low-speed switch,low frequency power amplify,

5.12. 3dd507.pdf Size:26K _china

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD507
NPN Silicon Low Frequency High Power Transistor
Features:
1. Three pins isn’t connected with the cover. It could be produced according to the requirement.
2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611
3. Use for Low-speed switch,low frequency power amplify,power adjustment.
4

Биполярный транзистор BUL6823 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BUL6823

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 13
W

Макcимально допустимое напряжение коллектор-база (Ucb): 600
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 1.2
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO92, TO92S

BUL6823
Datasheet (PDF)

1.1. bul6823a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823A

1.2. bul6823.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823
N

4.1. bul6825.pdf Size:84K _jmnic

Product Specification www.jmnic.com
Silicon Power Transistors BUL6825
DESCRIPTION ·
·High voltage ,high speed
·With TO-220C package
APPLICATIONS
·Relay drivers
·Inverters
·Switching regulators
·Deflection circuits
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 emitter
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Colle

4.2. bul6825.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor BUL6825
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V = 400V(Min.)
CEO(SUS)
·Low Collector Saturation Voltage
: V = 0.5V(Max) @ I = 1A
CE(sat) C
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in relay drivers ,inverters ,s

4.3. bul6821.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6821
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6821
N

4.4. bul6822a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822A

4.5. bul6822.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822
N

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

BUL6823 Datasheet (PDF)

1.1. bul6823a.pdf Size:312K _sisemi

1.2. bul6823.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823
N

4.1. bul6825.pdf Size:84K _jmnic

4.2. bul6825.pdf Size:215K _inchange_semiconductor

4.3. bul6821.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6821
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6821
N

4.4. bul6822a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822A

4.5. bul6822.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822
N

2SD2689LS Datasheet (PDF)

1.1. 2sd2689ls.pdf Size:30K _sanyo

Ordering number : ENN7527
2SD2689LS
NPN Triple Diffused Planar Silicon Transistor
2SD2689LS
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2079D
High reliability(Adoption of HVP process).

Adoption of MBIT process.
10.0 4.5
3.2
2.8
0.9
1.2 1.2
0.75 0.7
1 : Base
1 2 3
2 :

3.1. 2sd2689.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2689
DESCRIPTION
·High speed.
·High breakdown voltage(VCBO=1500V).
·High reliability(Adoption of HVP process).
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for Color TV Horizontal Deflection
Output Applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Co

4.1. 2sd2686.pdf Size:175K _toshiba

2SD2686
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2686
Solenoid Drive Applications
Unit: mm
Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A)
• Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-em

4.2. 2sd2688.pdf Size:39K _sanyo

Ordering number : ENN7526
2SD2688LS
NPN Triple Diffused Planar Silicon Transistor
2SD2688LS
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2079D
High reliability(Adoption of HVP process).

Adoption of MBIT process.
10.0 4.5
3.2
2.8
On-chip damper diode.
0.9
1.2 1.2
0.

4.3. 2sd2687s.pdf Size:76K _rohm

2SD2687S
Transistors
Low frequency amplifier, strobe
2SD2687S
Dimensions (Unit : mm)
Application
Low frequency amplifier
Storobo
Features
1) A collector current is large.
2) VCE(sat) ? 250mV
At lc=1.5A / lB=30mA
(1)Emitter(GND)
(2)Collector(OUT)
(3)Base(IN) Taping specifications
Absolute maximum ratings (Ta=25C)
Parameter Symbol Limits Unit
Collector-base voltag

2SD2396 Datasheet (PDF)

1.1. 2sd2396.pdf Size:41K _rohm

2SD2396
Transistors
Transistors
2SC5060
(96-819-D351)
(96-733-D416)
323

1.2. 2sd2396.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD2396
DESCRIPTION
·Low Collector Saturation Voltage
·High DC current gain
·Large collector power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Coll

1.3. 2sd2396.pdf Size:577K _blue-rocket-elect

2SD2396(BR3DA2396F)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.
特征 / Features
直流电流增益高,饱和压降低,集电极耗散功率大,,安全工作区宽。
High DC current gain),low VCE(sat),large collector power dissipation, wide SOA.
用途 / Applications
用于

3DD5036 Datasheet (PDF)

1.1. 3dd5036.pdf Size:144K _update

4.1. 3dd5038.pdf Size:147K _update

4.2. 3dd5039.pdf Size:146K _update_bjt

4.3. 3dd5032.pdf Size:213K _jilin_sino

2SD5703 Datasheet (PDF)

1.1. 2sd5703.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors 2SD5703
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

4.1. 2sd570.pdf Size:217K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD570
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 70V(Min.)
(BR)CEO
·Low Collector Saturation Voltage
: V = 0.6V(Max.)@I = 2A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS

4.2. 2sd5702.pdf Size:189K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors 2SD5702
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits of
colour TV receivers.
ABSOLUTE MAXIMUM RAT