Vishay германия
Содержание
- 1 О бренде
- 2 GENERAL SEMICONDUCTOR AND DIODES DIVISION
- 3 SILICONIX
- 3.1 1962: Siliconix is founded
- 3.2 1963: Siliconix introduces its first integrated circuit (IC) product
- 3.3 1967: Siliconix introduces analog switches
- 3.4 1968: Siliconix introduces multiplexers
- 3.5 1969: Siliconix moves to its present location in Santa Clara, California
- 3.6 1975: Siliconix introduces the first commercially viable power MOSFET
- 3.7 1982: Siliconix introduces the industry’s first power integrated circuits
- 3.8 1991: Siliconix introduces LITTLE FOOT
- 3.9 1993: Siliconix introduces industry-first power MOSFETs based on Trench technology
- 3.10 1998: Vishay acquires Semiconductor Business Group of TEMIC
- 3.11 2005: Vishay acquires remaining 19.6% interest in Siliconix
О бренде
Компания Vishay Intertechnology была основана в 1962 году доктором Феликсом Зендманом, при финансовой поддержке Альфреда Сленера. Компания начала свою деятельность с производства резисторов и тензодатчиков. В 1985 году, став лидером по производству этих электронных компонентов, компания начала серию стратегических поглощений, чтобы увеличить ассортимент электронных компонентов. Сегодня Vishay Intertechnology является одним из крупнейших в мире производителей дискретных полупроводников и пассивных электронных компонентов.
На сегодня компании Vishay принадлежат более двух десятков торговых марок, таких как: Dale, Sprague, Siliconix, Vitramon, Sfernice, Draloric, General Semiconductor, BC components, Esta, Telefunken, Tansitor. Последним приобретением является линейка танталовых конденсаторов от американской компании Kemet.
Компоненты Vishay Intertechnology используются практически во всех типах электронных устройств и оборудования: в промышленности; компьютерной, автомобильной и бытовой электронике; телекоммуникационной, военной, аэрокосмической технике; источниках питания и медицинского оборудования. Компания включает в себя производственные мощности в Китае и четырех других азиатских странах, Израиле, Европе, Северной и Южной Америках, а также офисы продаж по всему миру.
Осенью 2006 года состоялась покупка компанией Vishay заводов International Rectifier по производству стандартных диодов и транзисторов. В последние годы Vishay заняла ведущие позиции в производстве низковольтных силовых полевых транзисторов, выпрямительных диодов, диодов в стеклянных корпусах, инфракрасных компонентов, проволочных и силовых резисторов, пленочных резисторов, резистивных датчиков тока, танталовых конденсаторов с жидким электролитом и датчиков напряжения.
Продукция Vishay может практически полностью покрыть потребность в дискретных и пассивных компонентах из перечней закупки большинства производителей электроники. Линейка поставок на настоящий момент охватывает спектр от специализированных изделий до компонентов широкого применения — резисторы (включая уникальные сверхпрецизионные резисторы, изготовленные по технологии «BULK Metal Foil»), конденсаторы, от простейших до сверхмощных высокочастотных, индуктивности, датчики напряжения, измерительные элементы для весов, диоды, стабилитроны, транзисторы, микросхемы управления питанием, аналоговые ключи и мультиплексоры, светодиоды, инфракрасные излучатели и приемники, компоненты, поддерживающие стандарт IRDA.
Информация о бренде «Vishay» взята из открытых источников.
GENERAL SEMICONDUCTOR AND DIODES DIVISION
1960: Semiconductor Components Division of
General Instrument is founded in Hicksville, New York.
1964: General Instrument Taiwan factory is
granted foreign license #1.
1976: Semiconductor Components assumes the name
of Discrete Semiconductor.
1988: Discrete Semiconductor changes its name to
Power Semiconductor Division.
1990: Forstmann Little acquires General
Instrument Corp.
1992: General Instrument purchases GSI
Ireland.
1995: General Instrument China license
granted.
1997: General Instrument announces the split of
its three divisions.
1997: General Semiconductor signs contract to
acquire discrete business of ITT Industries, Inc.
1997: General Semiconductor becomes a publicly
traded company NYSE: SEM (formerly the Power Semiconductor
Division of General Instrument).
1997: General Semiconductor completes acquisition
of Small Signal Business of ITT Industries, Inc.
2001: General Semiconductor is acquired by Vishay
Intertechnology.
2001: General Semiconductor Inc. becomes Power
Diodes Division (PDD) after being acquired by Vishay.
2001: Diodes and Transistors portion of Vishay
Semiconductor GmbH (part of Vishay since its 1998
acquisition of TEMIC Semiconductor GmbH) becomes the
Small-Signal Products (SSP) Division.
2001: SMF (DO-219AB) package platform, with a
full range of Zener, switching diode, and ESD products, is
released to the market.
2001: FSMC, the first Folded SMX product, is
released to market.
2002: FSMA, the 2nd Folded SMX product, is
released to market.
2002: Transzorb TVS products are released from
Taipei, Taiwan factory.
2002: PDD starts to work with leading-edge
foundry on Trench MOS Barrier Schottky (TMBS)
development.
2002: Patent (US 6,393,090) is granted for TMBS
termination structure, followed by US 6,420,768 for further
enhancement.
2003: FSMB, the 3rd Folded SMX product, is
released to market.
2004: First leadless package (LLP) diodes, the
LLP70 and LLP75, are introduced.
2004: The patent US 6,791,172 «Power
Semiconductor Device Manufactured Using a Chip-Size
Package» is granted for the eSMP package.
2005: First TMBS product is released to
market.
2005: SMP, the first eSMP series
product, is released to market.
2006: SMPC, the second eSMP series product, is
released to market.
2006: Enhanced Power Bridge products are released
to market under patent US 7,719,096.
2007: Development of VBUS technology with low
capacitance (<1 pF).
2007: MicroSMP the third eSMP series product, is
released to market.
2008: Industry-first 200 V TMBS product is
published in PCIM Europe.
2008: Small Signal Products (SSP) Division,
High-Power Products (HPP) Division, and Power Diodes
Division (PDD) are merged to form the Diodes Division.
2009: Development of LC EMI filter technology for
ESD protection products.
2010: TMBS wafer fab in Diodes Division Taipei
site starts production.
2010: 45 V TMBS with industry-leading 330
million-cell per square-inch density is released to
market.
2011: Full series of surface-mount avalanche
diodes in SMP and SMPC packages is released to market.
2011: Introduction of CLP0603 diodes. Vishay’s
chip level package (CLP) for diodes allows much smaller
dimensions than previously possible. CLP0603, 0.6 mm by 0.3
mm in size, is the smallest diode of its type
available.
SILICONIX
1962: Siliconix is founded
The same year that Vishay is founded and opens for
business in Malvern, Pennsylvania, Siliconix is founded and
opens for business in Sunnyvale, California. The founders
are Frances and Bill Hugle, research scientists at a
Westinghouse semiconductor facility. The Electronic
Engineering Company of California and the Baldwin Piano
Company (one of the first companies to license Western
Electric’s transistor technology) are the initial
investors. The first products manufactured by Siliconix are
junction field-effect transistors (JFETs), devices used to
switch and sense analog signals.
1963: Siliconix introduces its first integrated circuit
(IC) product
1967: Siliconix introduces analog switches
Siliconix is the first company to produce and market
analog switches, components that behave like a relay, but
have no moving parts. The switching element is normally a
MOSFET. Today, applications for analog switches include
USB, audio, medical and healthcare, and portable
meters.
1968: Siliconix introduces multiplexers
Siliconix is the first company to produce and market
analog multiplexers. These components convert multiple
inputs to a single output. They make it possible for
several signals to share one device or resource. Today,
applications include medical and healthcare,
instrumentation, and automatic test equipment (ATE).
1969: Siliconix moves to its present location in Santa
Clara, California
The current facility is located just off Highway 101 in
the heart of Silicon Valley. Today, neighbors include
Intel, Nvidia, Yahoo, McAfee, and Cisco.
1975: Siliconix introduces the first commercially
viable power MOSFET
Metal-oxide-semiconductor field-effect transistors
(MOSFETs) function as solid-state switches to control
power. As an example of usage in current end products, they
turn off specific functions of notebook computers and
mobile phones when these functions are not in use, thereby
extending battery life. They also help convert power into
levels required by other components. Today, Vishay
Intertechnology offers low- and high-voltage Vishay
Siliconix TrenchFET and planar MOSFETs in
innovative package formats to switch and manage power very
efficiently. Vishay Siliconix MOSFET innovations have
included the first power MOSFETs offered in small-outline,
surface-mount packages (LITTLE FOOT), new
package options for better thermal performance
(PowerPAK) and smaller footprints
(ChipFET, MICRO FOOT). Recent
innovations include PolarPAK, which uses
double-sided cooling to create a more efficient, faster
switching MOSFET; the PowerPAIR package, which combines a
low-side and high-side MOSFET in one compact device; the
SkyFET, which combines a MOSFET and Schottky
diode; and TrenchFET Gen III p-channel technology, which
packs a billion transistor cells into each square inch of
silicon.
1982: Siliconix introduces the industry’s first power
integrated circuits
Power integrated circuits (ICs) combine the functions of
multiple semiconductors and passive components on a single
chip. Today, Vishay Siliconix IC products are focused on
analog signal switching and routing, power conversion, and
power management. They are used in end products such as
tablet, netbook, notebook, and desktop computers; mobile
phones; and fixed telecommunications systems.
1991: Siliconix introduces LITTLE FOOT
LITTLE FOOT, a trade name for power MOSFETs in
small-outline packages, saves space in portable designs
compared to through-hole MOSFETs.
1993: Siliconix introduces
industry-first power MOSFETs based on Trench
technology
Trench technology allows a smaller area of silicon to
efficiently handle a larger amount of current. A patent is
subsequently awarded in 1996. The first
TrenchFET MOSFETs had 8 million transistor
cells per square inch. Each new generation of these
components has raised the density level, which is currently
a billion cells per square inch.
1998: Vishay acquires Semiconductor Business Group of
TEMIC
This acquisition of Telefunken (Germany) and an 80.4%
interest in Siliconix (U.S.) gives Vishay a significant
presence in the discrete semiconductor market. It adds new
products to the Vishay portfolio, including MOSFETs,
diodes, optoelectronic components, and power and analog
switching integrated circuits.