Tip142 datasheet, equivalent, cross reference search

TIP117 Datasheet (PDF)

1.1. tip117 3ca117.pdf Size:274K _update

TIP117(3CA117) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率线性开关放大。
Purpose: Medium power linear switching applications.
特点:与 TIP112(3DA112)互补。
Features: Complement to TIP112(3DA112).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -100 V
CBO
V -100 V
CEO
V -5.0 V
EBO

1.2. tip115 tip116 tip117 to-220.pdf Size:373K _mcc

MCC
TIP115
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
TIP116
CA 91311
Phone: (818) 701-4933
TIP117
Fax: (818) 701-4939
Features
High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)
Low Collector-Emitter Saturation Voltage
PNP Epitaxial
Complementary to TIP110/111/112
Lead Free Finish/RoHS Compliant (Note1) («P» Suffix d

 1.3. tip117f.pdf Size:445K _kec

SEMICONDUCTOR TIP117F
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
C
DIM MILLIMETERS
S
_
FEATURES A 10.0 + 0.3
_
+
B 15.0 0.3
E
High DC Current Gain. C _
2.70 0.3
+
D 0.76+0.09/-0.05
: hFE=1000(Min.), VCE=-4V, IC=-1A.
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
Low Collector-Emitter Saturation Vol

1.4. tip117.pdf Size:75K _kec

SEMICONDUCTOR TIP117
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
A
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
R
S
FEATURES
P
D
High DC Current Gain.
DIM MILLIMETERS
: hFE=1000(Min.), VCE=-4V, IC=-1A.
A 10.30 MAX
B 15.30 MAX
Low Collector-Emitter Saturation Voltage.
C 0.80
_
+
Complementary to TIP112. D Φ3.60 0.20
T
E 3.00

 1.5. tip117.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP117
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -1A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.5V(Max)@ I = -2A
CE(sat) C
·Complement to Type TIP112
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICA

1.6. htip117.pdf Size:43K _hsmc

Spec. No. : HE200204
HI-SINCERITY
Issued Date : 2000.08.01
Revised Date : 2004.11.19
MICROELECTRONICS CORP.
Page No. : 1/4
HTIP117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
TO-220
The HTIP117 is designed for use in general purpose amplifier and low-speed
switching applications.
Darlington Schematic
C
Absolute Maximum Ratings (TA=25°C)
B
• Maximum Temperatures
Storage Tempera

Datasheets

DS0857: Complementary power Darlington transistors

PDF, 139 Кб, Версия: 8.1

Выписка из документа

TIP142, TIP147Complementary power Darlington transistorsDatasheet — production data Featuresв–  Monolithic Darlington configuration в–  Integrated antiparallel collector-emitter diode Applications2 в–  Linear and switching industrial equipmentTO-247 DescriptionThe devices are manufactured in planartechnology with “base island” layout andmonolithic Darlington configuration. The resultingtransistors show exceptional high gainperformance coupled with very low saturationvoltage. Table 1. 3 1 Figure 1. Internal schematic diagrams R1 typ. = 5 kО R1 typ. = 8 kО R2 typ. = 60 О R2 typ. = 100 О Device summary Part number Marking Polarity TIP142 TIP142 NPN TIP147 TIP147 PNP April 2012This is information on a product in full production. Doc ID 4132 Rev 8 Package Packaging TO-247 Tube 1/10www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratingsTable 2. Absolute maximum ratings Symbol Value Unit Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 10 A Collector peak current 20 A Base current 0.5 A PTOT Total dissipation at Tcase = 25 В°C 125 W TSTG Storage temperature -65 to 150 В°C 150 В°C ICMIB TJ Max. operating junction temperature For PNP type voltage and current are negative.Table 3.SymbolRthJC 2/10 Parameter VCBO IC Note: TIP142, TIP147 Thermal dataParameterThermal resistance junction-case Doc ID 4132 Rev 8 __max Value Unit 1 В°C/W TIP142, TIP147 2 Electrical characteristics Electrical characteristicsTcase = 25 В°C; unless otherwise specified.Table 4. …

TIP142T Datasheet (PDF)

1.1. tip142t 3da142t.pdf Size:518K _update

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于工业仪器的线性开关转换。
Purpose: Linear and switching industrial equipment.
特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。
Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain
complement to TIP147T(

1.2. tip142t.pdf Size:52K _fairchild_semi

TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units C

 1.3. tip142t 47t.pdf Size:410K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN
TIP147T PNP
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO

1.4. tip142t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applicatio

TIP147 Datasheet (PDF)

1.1. tip147f.pdf Size:62K _fairchild_semi

TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
Industrial Use
Complement to TIP140F/141F/142F
TO-3PF
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VC

1.2. tip140-tip147.pdf Size:321K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNIT
TIP145 TIP146 TIP147
Coll

 1.3. tip147.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP147
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Complement to Type TIP142
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

Аналоги

Транзистор TIP127 имеет много зарубежных аналогов. Приведем устройства, которые имеют такой же корпус, расположение выводов, электрические и функциональные характеристики: 2N6035, 2N6040, 2N6041, 2N6042, 2SB673, 2SB791, ECG26, TIP125, TIP126. На данные приборы можно менять без внесения изменений в электрическую схему.

Существуют похожие транзисторы, которыми можно заменить рассматриваемый, но некоторые электрические параметры могут отличаться: 2SB1024, 2SB676, BD332, BD334, BDT60B, BDW24C, BDW64C, KSB601, KTB1423, NSP702, TIP627.

Имеется также отечественный аналог TIP127 — КТ8115А.

Рекомендуемая комплементарная пара – TIP122.

BD142 Datasheet (PDF)

1.1. bd142.pdf Size:75K _comset

BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING
APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
VCEO Collector-Emitter Voltage 45 V

1.2. bd142.pdf Size:204K _inchange_semiconductor

isc Silicon NPN Power Transistor BD142
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·LF large signal power amplification.
·Intended for a wide variety of intermediate power applications.
·Suited for use in audio and inverter circuits at 12V.
ABSOLUTE MAXIMUM

TIP137 Datasheet (PDF)

1.1. tip137.pdf Size:212K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP137
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -4A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.0V(Max)@ I = -4A
CE(sat) C
·Complement to Type TIP132
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICA

5.1. tip130-32 tip135-37.pdf Size:150K _mospec

A
A
A

5.2. tip130-137.pdf Size:327K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PLASTIC POWER TRANSISTORS TIP130 TIP135
TIP131 TIP136
TIP132 TIP137
NPN PNP
TO-220
Plastic Package
Intended for use in Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION SYMBOL TIP130/135 TIP131/136 TIP132/137 UNIT
VCEO
Collector Emitter Voltage 60 80 100 V
Col

 5.3. tip130.pdf Size:212K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP130
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 4A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 60V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = 2.0V(Max)@ I = 4A
CE(sat) C
·Complement to Type TIP135
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS

5.4. tip132.pdf Size:133K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP132
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
·Complement to Type TIP137
APPLICATIONS
·Designed for general-purpose amp

 5.5. tip135.pdf Size:212K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP135
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -4A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -60V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.0V(Max)@ I = -4A
CE(sat) C
·Complement to Type TIP130
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT

5.6. tip136.pdf Size:212K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP136
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -4A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -80V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = -2.0V(Max)@ I = -4A
CE(sat) C
·Complement to Type TIP131
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT

5.7. tip131.pdf Size:212K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP131
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 4A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Low Collector-Emitter Saturation Voltage-
: V = 2.0V(Max)@ I = 4A
CE(sat) C
·Complement to Type TIP136
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS

TIP145 Datasheet (PDF)

1.1. tip145f.pdf Size:59K _samsung

PNP EPITAXIAL
TIP145F/146F/147F DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
TO-3PF
MIN h = 1000 @ V = -4V, IC = -5A
FE CE
MONOLITHIC CONSTRUCTION WITH BUILT
IN BASE-EMITTER SHUNT RESISTORS
INDUSTRIAL USE
Complement to TIP140F/141F/142F
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage VCBO
V
: TIP145F
— 60
V
: TIP146F
— 80
V
: TIP147F
— 10

1.2. tip145t.pdf Size:215K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP145T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -60V(Min)
CEO(SUS)
·Complement to Type TIP140T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching appli

 1.3. tip145 146 147.pdf Size:155K _inchange_semiconductor

Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors
DESCRIPTION Ў¤ With TO-3PN package Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Complement to type TIP140/141/142 APPLICATIONS Ў¤ Designed for general­purpose amplifier and low frequency switching applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION

TIP14

1.4. tip145.pdf Size:222K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP145
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = -5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -60V(Min)
CEO(SUS)
·Complement to Type TIP140
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applica

2SK147 Datasheet (PDF)

1.1. 2sk1470.pdf Size:97K _sanyo

Ordering number:EN3771A
N-Channel Silicon MOSFET
2SK1470
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
Low-voltage drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symb

1.2. 2sk1471.pdf Size:92K _sanyo

Ordering number:EN3772A
N-Channel Silicon MOSFET
2SK1471
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

 1.3. 2sk1472.pdf Size:119K _sanyo

Ordering number:EN3773A
N-Channel Silicon MOSFET
2SK1472
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

1.4. 2sk1474.pdf Size:120K _sanyo

Ordering number:EN3775A
N-Channel Silicon MOSFET
2SK1474
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

 1.5. 2sk1475.pdf Size:120K _sanyo

Ordering number:EN3776A
N-Channel Silicon MOSFET
2SK1475
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

1.6. 2sk147.pdf Size:86K _sanyo

1.7. 2sk1473.pdf Size:123K _sanyo

Ordering number:EN3774
N-Channel Silicon MOSFET
2SK1473
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
Low-voltage drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbo

1.8. 2sk1478.pdf Size:33K _panasonic

Power F-MOS FETs 2SK1478
2SK1478
Silicon N-Channel Power F-MOS
Unit : mm
Features
10.0 0.2 4.2 0.2
Low ON-resistance RDS(on) : RDS(on)= 0.4?(typ)
5.5 0.2 2.7 0.2
High-speed switching : tf = 44ns(typ)
No secondary breakdown
o3.1 0.1
High breakdown voltage, large allowable power dissipation
Applications
1.3 0.2
Non-contact relay
1.4 0.1
Solenoid drive
+0.2
0.5 -0.1
0.8

1.9. 2sk1476.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1476
DESCRIPTION
·Drain Current –I =12A@ T =25℃
D C
·Drain Source Voltage-
: V =450 (Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solen

1.10. 2sk1478.pdf Size:192K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1478
DESCRIPTION
·Drain Current –I =8A@ T =25℃
D C
·Drain Source Voltage-
: V =250V(Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL ARAMETER VALUE UNIT
V Drain-Source Voltage (V =0) 250 V
DSS GS
V Gate-Source

1.11. 2sk1477.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1477
DESCRIPTION
·Drain Current –I =12A@ T =25℃
D C
·Drain Source Voltage-
: V =500 (Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solen

TIP141 Datasheet (PDF)

1.1. tip141.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP141
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Complement to Type TIP146
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applicati

1.2. tip141f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP141F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Complement to Type TIP146F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applica

 1.3. tip141t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP141T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min)
CEO(SUS)
·Complement to Type TIP146T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching application

2SK147 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK147

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.6
W

Предельно допустимое напряжение сток-исток (Uds): 40
V

Максимально допустимый постоянный ток стока (Id): 0.03
A

Максимальная температура канала (Tj): 125
°C

Сопротивление сток-исток открытого транзистора (Rds): 25
Ohm

Тип корпуса: TO92MOD

2SK147
Datasheet (PDF)

1.1. 2sk1470.pdf Size:97K _sanyo

Ordering number:EN3771A
N-Channel Silicon MOSFET
2SK1470
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
Low-voltage drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symb

1.2. 2sk1471.pdf Size:92K _sanyo

Ordering number:EN3772A
N-Channel Silicon MOSFET
2SK1471
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

 1.3. 2sk1472.pdf Size:119K _sanyo

Ordering number:EN3773A
N-Channel Silicon MOSFET
2SK1472
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

1.4. 2sk1474.pdf Size:120K _sanyo

Ordering number:EN3775A
N-Channel Silicon MOSFET
2SK1474
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

 1.5. 2sk1475.pdf Size:120K _sanyo

Ordering number:EN3776A
N-Channel Silicon MOSFET
2SK1475
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2083B
Low-voltage drive.

6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3
SANYO : TP
unit:mm
2092B

6.5 2.3
5.0 0.5
4
0.5
0.85

1.6. 2sk147.pdf Size:86K _sanyo

1.7. 2sk1473.pdf Size:123K _sanyo

Ordering number:EN3774
N-Channel Silicon MOSFET
2SK1473
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
Low-voltage drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbo

1.8. 2sk1478.pdf Size:33K _panasonic

Power F-MOS FETs 2SK1478
2SK1478
Silicon N-Channel Power F-MOS
Unit : mm
Features
10.0 0.2 4.2 0.2
Low ON-resistance RDS(on) : RDS(on)= 0.4?(typ)
5.5 0.2 2.7 0.2
High-speed switching : tf = 44ns(typ)
No secondary breakdown
o3.1 0.1
High breakdown voltage, large allowable power dissipation
Applications
1.3 0.2
Non-contact relay
1.4 0.1
Solenoid drive
+0.2
0.5 -0.1
0.8

1.9. 2sk1476.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1476
DESCRIPTION
·Drain Current –I =12A@ T =25℃
D C
·Drain Source Voltage-
: V =450 (Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solen

1.10. 2sk1478.pdf Size:192K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1478
DESCRIPTION
·Drain Current –I =8A@ T =25℃
D C
·Drain Source Voltage-
: V =250V(Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL ARAMETER VALUE UNIT
V Drain-Source Voltage (V =0) 250 V
DSS GS
V Gate-Source

1.11. 2sk1477.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1477
DESCRIPTION
·Drain Current –I =12A@ T =25℃
D C
·Drain Source Voltage-
: V =500 (Min)
DSS
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solen

Другие MOSFET… IRLB4132PBF
, 2SK240
, 2SJ75
, 2SK146
, 2SJ73
, 2SK266
, 2SK455
, 2SK456
, IRFZ44N
, IFN146
, 2SK2564
, 2SK1537
, 2SK2879-01
, 2SK2367
, 2SK2368
, LND150K1
, LND150N3
.

TIP142 Datasheet (PDF)

1.1. tip142t 3da142t.pdf Size:518K _update

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于工业仪器的线性开关转换。
Purpose: Linear and switching industrial equipment.
特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。
Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain
complement to TIP147T(

1.2. tip142t.pdf Size:52K _fairchild_semi

TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
Complement to TIP145T/146T/147T
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units C

 1.3. tip142f.pdf Size:62K _fairchild_semi

TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
Complement to TIP145F/146F/147F
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
TO-3PF
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Symbol Parameter Value Units
VCBO

1.4. tip142t 47t.pdf Size:410K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN
TIP147T PNP
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO 5.0

 1.5. tip142t.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142T
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147T
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applicatio

1.6. tip142f.pdf Size:223K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor TIP142F
DESCRIPTION
·High DC Current Gain-
: h = 1000(Min)@ I = 5A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 100V(Min)
CEO(SUS)
·Complement to Type TIP147F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applic

1.7. tip142.pdf Size:164K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP142
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type TIP147
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta