2n2222a datasheet, equivalent, cross reference search

Биполярный транзистор 2N2219 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N2219

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.8
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.8
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 250
MHz

Ёмкость коллекторного перехода (Cc): 8
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO39

2N2219
Datasheet (PDF)

1.1. 2n2219 2n2219a 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
1997 Sep 03
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES PINNING
High current (max. 800 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1

1.2. 2n2222a 2n2219a.pdf Size:168K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.3. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of col

1.4. 2n2219a 2n2222a.pdf Size:166K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.5. 2n2218-a 2n2219-a.pdf Size:56K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n2219a(to-39).pdf Size:327K _mcc

MCC
TM
Micro Commercial Components
Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
SWITCHING
Features
Features
TRANSISTOR
Collector — Base Voltage 75 V
Collector — Current 800 mA
Medium Current, Bipolar Transistor
SMALL SIGNAL
Marking: Type number
BIPOLAR
Lead Free Finish/RoHS Compliant(Note 1) («P

1.7. 2n2218 2n2219.pdf Size:58K _microsemi

TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base

Другие транзисторы… 2N2217
, 2N2217-51
, 2N2217A
, 2N2218
, 2N2218A
, 2N2218AQF
, 2N2218AS
, 2N2218S
, BC639
, 2N2219A
, 2N2219AL
, 2N2219AQF
, 2N2219AS
, 2N2219S
, 2N222
, 2N2220
, 2N2220A
.

2N2222AUB Datasheet (PDF)

1.1. 2n2222aubc.pdf Size:138K _upd

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES LEVELS
JANSM – 3K Rads (Si)
2N2221A 2N2222A
JANSD – 10K Rads (Si)
2N2221AL 2N2222AL
JANSP – 30K Rads (Si)
2N2221AUA 2N2222AUA

1.2. 2n2222aub.pdf Size:250K _optek

Product Bulletin JANTX, JANTXV, 2N2222AUB
September 1996
Surface Mount NPN General Purpose Transistor
Type JANTX, JANTXV, 2N2222AUB
Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Ceramic surface mount package
Collector-Emitter Voltage. . . . . . . . .

 1.3. 2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf Size:377K _aeroflex

Radiation Hardened
NPN Silicon Switching Transistors
2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB
2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB
Features
• Qualified to MIL-PRF-19500/255
• Levels: Commerical
JANS
JANSM-3K Rads (Si)
JANSD-l0K Rads (Si)
JANSP-30K Rads (Si)
JANSL-50K Rads (Si)
JANSR-l00K Rads (Si)
• TO-18 (TO-206AA), Surface mount UA & UB Packages
Absolute Maximum Ra

KN2222A Datasheet (PDF)

1.1. kn2222as s.pdf Size:43K _kec

SEMICONDUCTOR KN2222S/AS
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Low Leakage Current
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
C 1.30 MAX
2
Low Saturation Voltage 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
1
G 1

4.1. kn2222 a.pdf Size:39K _kec

SEMICONDUCTOR KN2222/A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
N DIM MILLIMETERS
Low Saturation Voltage
A 4.70 MAX
E
K
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. B 4.80 MAX
G
C 3.70 MAX
D
Complementary to the KN2907/2907A.
D 0.45
E 1.00
F

2N2219 Datasheet (PDF)

1.1. 2n2219 2n2219a 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
1997 Sep 03
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES PINNING
High current (max. 800 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1

1.2. 2n2222a 2n2219a.pdf Size:168K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.3. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of col

1.4. 2n2219a 2n2222a.pdf Size:166K _st

2N2219A
2N2222A

HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur

 1.5. 2n2218-a 2n2219-a.pdf Size:56K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n2219a(to-39).pdf Size:327K _mcc

MCC
TM
Micro Commercial Components
Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
SWITCHING
Features
Features
TRANSISTOR
Collector — Base Voltage 75 V
Collector — Current 800 mA
Medium Current, Bipolar Transistor
SMALL SIGNAL
Marking: Type number
BIPOLAR
Lead Free Finish/RoHS Compliant(Note 1) («P

1.7. 2n2218 2n2219.pdf Size:58K _microsemi

TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base

PN2222A Datasheet (PDF)

1.1. pn2222arlrpg.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6.0
CASE 29
STYLE

1.2. pn2222arlrag.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6.0
CASE 29
STYLE

 1.3. pn2222arlrmg.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6.0
CASE 29
STYLE

1.4. pn2222ag.pdf Size:194K _upd

PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO Vdc
1
PN2222 30
EMITTER
PN2222A 40
Collector-Base Voltage VCBO Vdc
PN2222 60
PN2222A 75
Emitter-Base Voltage VEBO Vdc
PN2222 5.0
TO-92
PN2222A 6.0
CASE 29
STYLE

 1.5. pn2222a.pdf Size:73K _st

PN2222A

SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
PN2222A PN2222A TO-92 / Bulk
PN2222A-AP PN2222A TO-92 / Ammopack
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE PNP COMPLEMENTARY TYPE IS
PN2907A
TO-92 TO-92
APPLICATIONS
Bulk Ammopack
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPME

1.6. pn2222a mmbt2222a pzt2222a.pdf Size:174K _fairchild_semi

1.7. pn2222a .pdf Size:899K _fairchild_semi

1.8. pn2221 pn2222a.pdf Size:44K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.9. pn2222a to-92.pdf Size:236K _mcc

MCC
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
PN2222A
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
625mW
Marking:Type number
Continuous Collector Current (Ic) =600mA.
NPN General
Operating and storange temperatu

1.10. pn2222a.pdf Size:279K _utc

UNISONIC TECHNOLOGIES CO., LTD
PN2222A NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
? FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
PN2222AL-AB3-R PN2222AG-AB3-R SOT-89 B C E Tape Reel
PN2222AL-T92-R P

1.11. pn2222a.pdf Size:173K _auk

 PN2222A
NPN Silicon Transistor
Descriptions
PIN Connection
• General purpose application
C
• Switching application
Features
B
• Low Leakage current
• Low collector saturation voltage enabling
E
low voltage operation
• Complementary pair with PN2907A
TO-92
Ordering Information
Type NO. Marking Package Code
PN2222A PN2222A TO-92
Absolute maximum rat

1.12. hpn2222a.pdf Size:56K _hsmc

Spec. No. : HE6118
HI-SINCERITY
Issued Date : 1992.10.23
Revised Date : 2004.12.15
MICROELECTRONICS CORP.
Page No. : 1/5
HPN2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2222A is designed for general purpose amplifier and high speed,
medium-power switching applications.
Features
TO-92
• Low Collector Saturation Voltage
• High Speed Switching
• For Complementary Use

P2N2222AG Datasheet (PDF)

1.1. p2n2222ag.pdf Size:165K _upd

P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi

2.1. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

2.2. p2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

 2.3. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis

P2N2222 Datasheet (PDF)

1.1. p2n2222ag.pdf Size:165K _upd

P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi

1.2. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

 1.3. p2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

1.4. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis

 1.5. p2n2222 a.pdf Size:240K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222
P2N2222A
EBC
TO-92
Complementary Silicon Transistors For Switching And Linear Applications
DC Amplifier & Driver For Industrial Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL 2222 2222A UNIT
Collecto

P2N2222A Datasheet (PDF)

1.1. p2n2222ag.pdf Size:165K _upd

P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi

1.2. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

 1.3. p2n2222a.pdf Size:238K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc

1.4. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis

VN2222LL Datasheet (PDF)

1.1. vn2222llg.pdf Size:92K _update_mosfet

VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
N-Channel TO-92
http://onsemi.com
http://onsemi.com
Features
• This is a Pb-Free Device*
150 mA, 60 V
RDS(on) = 7.5 W
MAXIMUM RATINGS
N-Channel
Rating Symbol Value Unit
D
Drain -Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc
Gate-Source Voltage
G
— Continuous VGS ± 20 Vdc
— Non-repetitive (tp ≤ 5

1.2. vn2222ll.rev1.pdf Size:68K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by VN2222LL/D
TMOS FET Transistor
NChannel Enhancement
VN2222LL
3 DRAIN
Motorola Preferred Device
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating Symbol Value Unit
1
DrainSource Voltage VDSS 60 Vdc
2
3
DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc
CASE 2904, STYLE 22
GateSource Voltage
TO92 (TO226AA)
Continuous VGS 2

 1.3. vn10lls vn0605t vn0610ll vn2222ll.pdf Size:51K _vishay

1.4. vn2222ll.pdf Size:17K _diodes

N-CHANNEL ENHANCEMENT
VN2222LL
MODE VERTICAL DMOS FET
ISSUE 2 FEB 94
S
G
D
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb = 25C ID 150 mA
Pulsed Drain Current IDM 1A
Gate Source Voltage VGS 40 V
Power Dissipation at Tamb = 25C Ptot 400 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 C

 1.5. vn2222llg.pdf Size:96K _onsemi

VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
N-Channel TO-92
http://onsemi.com
http://onsemi.com
Features
This is a Pb-Free Device*
150 mA, 60 V
RDS(on) = 7.5 W
MAXIMUM RATINGS
N-Channel
Rating Symbol Value Unit
D
Drain -Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc
Gate-Source Voltage
G
— Continuous VGS 20 Vdc
— Non-repetitive (tp ? 50 ms) VG

2N2222ACSM Datasheet (PDF)

2.1. 2n2222ac3b.pdf Size:86K _upd

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas

2.2. 2n2222ac1b.pdf Size:563K _upd

SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VE

 2.3. 2n2222ac3c.pdf Size:86K _upd

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas

2.4. 2n2222ac1a.pdf Size:563K _upd

SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VE

 2.5. 2n2222ac3a.pdf Size:86K _upd

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas

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