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Даташит bc556 pdf ( datasheet )

Содержание

1 Производители
2 BC560 Datasheet (PDF)
3 Биполярный транзистор BC558B — описание производителя. Основные параметры. Даташиты.
4 BC558B Datasheet (PDF)
5 BC558C Datasheet (PDF)
6 2SC5586 Datasheet (PDF)
7 BC558A Datasheet (PDF)
8 BC559C Datasheet (PDF)
9 BC558B Datasheet (PDF)

Производители

Производством транзистора А1015 занимаются многие различных зарубежные компаний: Unisonic Technologies, DC Components, Jiangsu Changjiang Electronics Technology, SeCoS Halbleitertechnologie, Weitron Technology, Hi-Sincerity Mocroelectronics, MAKO Semiconductor, Daya Electric Group, Willas Electronic, Micro Electronics, Guangdong Hottech Industrial, Shenzhen KOO Chin Electronics, Shike Electronics, Jiangsu High diode, Toshiba, Shenzhen Jin Yu Semiconductor, Shenzhen SLS Technology. На российском рынке они представлены такими изготовителями: Fairchild Semiconductor, INCHANGE Semiconductor, DC Components.

BC560 Datasheet (PDF)

Кт807б

1.1. bc559 bc560.pdf Size:107K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC559/D
Low Noise Transistors
PNP Silicon
BC559, B, C
BC560C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol BC559 BC560 Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 30 45 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 30 50 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Curren

1.2. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

BC556/557/558/559/560
Switching and Amplifier
High Voltage: BC556, VCEO= -65V
Low Noise: BC559, BC560
Complement to BC546 … BC 550
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC556 -80 V
: BC557/560 -50 V
: BC558/559 -30 V
VCEO Col

1.3. bc559 bc560.pdf Size:298K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C
BC560, B, C
TO-92
Plastic Package
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise)
DESCRIPTION SYMBOL BC559 BC560 UNITS
VCEO
Collector Emitter Voltage 30 45 V
VCBO
Collector Base Voltage 30 50 V
VEBO
Emitter

1.4. bc559 bc560.pdf Size:28K _kec

SEMICONDUCTOR BC559/560
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW NOISE APPLICATION.
B C
FEATURE
For Complementary with NPN Type BC549/550.
N DIM MILLIMETERS
A 4.70 MAX
E
K
G B 4.80 MAX
MAXIMUM RATING (Ta=25 )
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
BC559 -30
G 0.85
VCBO
Collector-Base Voltage V
H 0.45
BC560 -50 _
H J 14.00 + 0.50
K

Биполярный транзистор BC558B — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC558B

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 30
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 75
MHz

Ёмкость коллекторного перехода (Cc): 7
pf

Статический коэффициент передачи тока (hfe): 240

Корпус транзистора: TO226

BC558B
Datasheet (PDF)

Транзистор bc547

1.1. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _update

BC556xBK … BC559xBK
BC556xBK … BC559xBK
General Purpose Si-Epitaxial PlanarTransistors
PNP PNP
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2009-12-07
±0.1
Power dissipation – Verlustleistung 500 mW
4.6
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
C B E
Plastic material has UL classification 94V-0
Gehäusematerial

1.2. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
Pb-Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS 2
BASE
Rating Symbol Value Unit
Collector — Emitter Voltage VCEO Vdc
3
BC556 -65
EMITTER
BC557 -45
BC558 -30
Collector — Base Voltage VCBO Vdc
BC556 -80
BC557 -50
BC558 -30
TO-92
Emitter — Base Voltage VEBO -5.0 Vdc CASE 29

5.1. bc556 bc557 bc558.pdf Size:159K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC556/D
Amplifier Transistors
BC556,B
PNP Silicon
BC557A,B,C
COLLECTOR
BC558B
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
BC BC BC
3
556 557 558
Rating Symbol Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 65 45 30 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 80 50 30 Vdc
EmitterBase Voltage VEBO

5.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

5.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

5.4. sbc558.pdf Size:94K _auk

SBC558
Semiconductor
Semiconductor
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=-30V
• Complementary pair with SBC548
Ordering Information
Type NO. Marking Package Code
SBC558 SBC558 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.

5.5. bc556 bc557 bc558.pdf Size:353K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BC556, A, B,
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC557, A, B, C
BC558, A, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
E
B «T»
C
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25?C)
DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS
Collector Emitter

5.6. bc556 bc557 bc558.pdf Size:274K _kec

SEMICONDUCTOR BC556/7/8
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
B C
FEATURES
For Complementary With NPN Type BC546/547/548.
N DIM MILLIMETERS
A 4.70 MAX
E
K
G B 4.80 MAX
C 3.70 MAX
D
D 0.45
E 1.00
MAXIMUM RATING (Ta=25 )
F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT
H 0.45
_
H J 14.00 + 0.50
BC556 -80
K 0.55 M

5.7. bc556 bc557 bc558.pdf Size:2241K _wietron

BC556, A/B
BC557, A/B/C
BC558, A/B/C
PNP General Purpose Transistor
COLLECTOR
3
P b Lead(Pb)-Free
2
BASE
1
2
3
1
EMITTER
TO-92
Maximum Ratings ?
( T =25 C unless otherwise noted)
A
Rating Symbol BC556 BC557 BC558 Unit
V -65 -45
Collector-Emitter Voltage ECO -30
V
-30
V
Collector-Base Voltage CBO -80 -50 V
V
EBO
Emitter-Base Voltage -5 -5 -5 V
l 100
Collector Current Co

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

BC558C Datasheet (PDF)

S8550t datasheet, equivalent, cross reference search

1.1. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _update

5.1. bc556 bc557 bc558.pdf Size:159K _motorola

5.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

5.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

5.4. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

5.5. sbc558.pdf Size:94K _auk

5.6. bc556 bc557 bc558.pdf Size:353K _cdil

5.7. bc556 bc557 bc558.pdf Size:274K _kec

5.8. bc556 bc557 bc558.pdf Size:2241K _wietron

2SC5586 Datasheet (PDF)

1.1. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

4.3. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

4.4. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
R

4.5. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.6. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.30.1
2.00.2
10
Absolute Maximum Ratings Ta =

4.7. 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.8. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H J

4.9. 2sc5584.pdf Size:186K _inchange_semiconductor

isc Product Specification
isc Silicon NPN Power Transistor 2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc5585.pdf Size:204K _lge

2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Vol

4.11. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipatio

BC558A Datasheet (PDF)

1.1. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _update

5.1. bc556 bc557 bc558.pdf Size:159K _motorola

5.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

5.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

5.4. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

5.5. sbc558.pdf Size:94K _auk

5.6. bc556 bc557 bc558.pdf Size:353K _cdil

5.7. bc556 bc557 bc558.pdf Size:274K _kec

5.8. bc556 bc557 bc558.pdf Size:2241K _wietron

BC559C Datasheet (PDF)

1.1. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _update

5.1. bc559 bc560.pdf Size:107K _motorola

5.2. bc559 4.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC559
PNP general purpose transistor
1999 May 28
Product specification
Supersedes data of 1997 Jun 03
Philips Semiconductors Product specification
PNP general purpose transistor BC559
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
Low voltage (max. 30 V).
1 emitter
2 base
APPLICATIONS
3 collector
General

5.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

5.4. bc559.pdf Size:125K _onsemi

BC559
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC559 BC560 Unit
http://onsemi.com
Collector-Emitter Voltage VCEO -30 -45 Vdc
Collector-Base Voltage VCBO -30 -50 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current Continuous IC -100 mAdc
Total Device Dissipation @ PD mW
1
TA = 25C 625
2
3
Derate above 25C 5.0 mW/C
Total Device Dissipation @ PD Watt

5.5. bc559 bc560.pdf Size:298K _cdil