S8550t datasheet, equivalent, cross reference search

MMBT8550 Datasheet (PDF)

1.1. mmbt8550.pdf Size:332K _upd

1.2. mmbt8550lt1.pdf Size:131K _upd

RoHS
MMBT8550LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
Complement to MMPT8050LT1
1.
1.BASE
Collector-current:Ic=-500mA
2.EMITTER
High Total Power Dissipation:Pc=225mW
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage

 5.1. mmbt8099lt1g.pdf Size:154K _upd

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL

5.2. mmbt8050.pdf Size:325K _upd

 5.3. mmbt8050lt1.pdf Size:150K _upd

RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
1
B PUSH-PULL OPERATION
2
1.
Complement to MMPT8550LT1
1.BASE
Collector Current:Ic=500mA
2.EMITTER
o
2.4
Collector Dissipation:Pc=225mW(Tc=25 C) 3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Volta

5.4. mmbt8050d.pdf Size:351K _upd

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

 5.5. mmbt8099lt1.pdf Size:158K _onsemi

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL CHAR

5.6. mmbt8050d.pdf Size:351K _bytesonic

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

8550SS Datasheet (PDF)

1.1. 8550ss.pdf Size:230K _upd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
8550SS TRANSISTOR (PNP)
1.EMITTER
FEATURES
2.COLLECTOR
General Purpose Switching and Amplification.
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-

1.2. 8550ss-c 8550ss-d.pdf Size:366K _upd

MCC
8550SS-C
TM Micro Commercial Components
20736 Marilla Street Chatsworth
Micro Commercial Components
8550SS-D
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 1.5A
• Collector-base Voltage 40V
Transistors
• Operating and storage

 1.3. 8550sst.pdf Size:344K _secos

8550SST
-1.5A , -40V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
? General Purpose Switching and Amplification.
G H
?Emitter
?Collector
?Base
J
CLASSIFICATION OF hFE (1)
A D
Millimeter
Product-Rank 8550SST-B 8550SST-C 8550SST-D
REF.
B Min. Max.
A 4.40 4.70
Ra

MPS8550 Datasheet (PDF)

1.1. mps8550sc.pdf Size:603K _update

SEMICONDUCTOR MPS8550SC
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
·Complementary to MPS8050SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO -40 V
Collector-Base Voltage
VCEO -25 V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -1,200 mA
PC *
Collector Power Dissipation 350 mW
Tj
Junctio

1.2. mps8550s.pdf Size:390K _kec

SEMICONDUCTOR MPS8550S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
E
L B L
Complementary to MPS8050S.
DIM MILLIMETERS
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
C 1.30 MAX
2
3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
1
MAXIMUM RATING (Ta=25 ) G 1.90
H 0.95
J 0.13+0.10/-0.05
CHARACTERISTIC SYMBOL RATING UNIT
K 0.00 ~ 0.10
L 0.55
VCBO -40 V
Collecto

 1.3. mps8550.pdf Size:45K _kec

SEMICONDUCTOR MPS8550
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
B C
FEATURE
·Complementary to MPS8050.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
MAXIMUM RATING (Ta=25℃)
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
VCBO -40 V
Collector-Base Voltage
G 0.85
H 0.45
VCEO -25 V
Collector-Emitter Voltage _
H
J 14.0

Биполярный транзистор MMBT8550 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: MMBT8550

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.35
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

MMBT8550
Datasheet (PDF)

1.1. mmbt8550.pdf Size:332K _upd

1.2. mmbt8550lt1.pdf Size:131K _upd

RoHS
MMBT8550LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
Complement to MMPT8050LT1
1.
1.BASE
Collector-current:Ic=-500mA
2.EMITTER
High Total Power Dissipation:Pc=225mW
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage

 5.1. mmbt8099lt1g.pdf Size:154K _upd

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL

5.2. mmbt8050.pdf Size:325K _upd

 5.3. mmbt8050lt1.pdf Size:150K _upd

RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
1
B PUSH-PULL OPERATION
2
1.
Complement to MMPT8550LT1
1.BASE
Collector Current:Ic=500mA
2.EMITTER
o
2.4
Collector Dissipation:Pc=225mW(Tc=25 C) 3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Volta

5.4. mmbt8050d.pdf Size:351K _upd

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

 5.5. mmbt8099lt1.pdf Size:158K _onsemi

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL CHAR

5.6. mmbt8050d.pdf Size:351K _bytesonic

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

Другие транзисторы… MMBT6517LT1G
, MMBT6520LT1G
, MMBT6521LT1G
, MMBT720
, MMBT8050
, MMBT8050D
, MMBT8050LT1
, MMBT8099LT1G
, BD140
, MMBT8550LT1
, MMBT9012LT1
, MMBT9013LT1
, MMBT9014LT1
, MMBT9015LT1
, MMBT9018LT1
, MMBT918LT1G
, MMBT945-H
.

8550C Datasheet (PDF)

1.1. 8550c.pdf Size:143K _upd

SUNROC
8550C TRANSISTOR(PNP)
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
1. EMITTER
Symbol Parameter Value Units
Collector-Base Voltage 2. BASE
VCBO -40 V
Collector-Emitter Voltage -25
VCEO V
3. COLLECTOR
Emitter-Base Voltage
VEBO -5 V
Collector Current
IC -0.5 A
Collector Power Dissipation
PC 625 mW
Junction Temperature
Tj 150 ℃
Storag Temperature -55～150

1.2. s8550b s8550c s8550d.pdf Size:177K _update

S8550-B
MCC
Micro Commercial Components
TM
S8550-C
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
S8550-D
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 0.5A
• Collector-base Voltage 40V
Transistors
• Operating a

KST8550 Datasheet (PDF)

1.1. kst8550s.pdf Size:985K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550S
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector current: IC-=0.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VE

1.2. kst8550x.pdf Size:543K _kexin

SMD Type Transistors
PNP Transistors
KST8550X
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=-1.5A
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emit

 1.3. kst8550d-50.pdf Size:1283K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550D-50
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
● Collector Current Capability IC=-1.2A
● Collector Emitter Voltage VCEO=-50V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
C

1.4. kst8550m.pdf Size:985K _kexin

SMD Type
SMD Type Transistors
PNP Transistors
KST8550M
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current: IC=-0.8A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-

 1.5. kst8550.pdf Size:1092K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector Current: IC=-1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEB

SS8550-D Datasheet (PDF)

3.1. mmss8550-h.pdf Size:153K _upd

MCC
MMSS8550-L
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
MMSS8550-H
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plastic-Encapsulate
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Tra

3.2. mmss8550-l.pdf Size:153K _upd

MCC
MMSS8550-L
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
MMSS8550-H
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plastic-Encapsulate
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Tra

 3.3. ss8550-c-d.pdf Size:196K _update

MCC
SS8550-C
TM Micro Commercial Components
20736 Marilla Street Chatsworth
Micro Commercial Components
SS8550-D
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 1.5A
• Collector-base Voltage 40V
Transistors
• Operating and storage

SS8550-C Datasheet (PDF)

1.1. ss8550-c-d.pdf Size:196K _update

MCC
SS8550-C
TM Micro Commercial Components
20736 Marilla Street Chatsworth
Micro Commercial Components
SS8550-D
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 1.5A
• Collector-base Voltage 40V
Transistors
• Operating and storage

3.1. mmss8550-h.pdf Size:153K _upd

MCC
MMSS8550-L
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
MMSS8550-H
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plastic-Encapsulate
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Tra

3.2. mmss8550-l.pdf Size:153K _upd

MCC
MMSS8550-L
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
MMSS8550-H
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plastic-Encapsulate
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Tra

KST8550S Datasheet (PDF)

1.1. kst8550s.pdf Size:985K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550S
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector current: IC-=0.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VE

3.1. kst8550x.pdf Size:543K _kexin

SMD Type Transistors
PNP Transistors
KST8550X
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=-1.5A
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emit

3.2. kst8550d-50.pdf Size:1283K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550D-50
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
● Collector Current Capability IC=-1.2A
● Collector Emitter Voltage VCEO=-50V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
C

 3.3. kst8550m.pdf Size:985K _kexin

SMD Type
SMD Type Transistors
PNP Transistors
KST8550M
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current: IC=-0.8A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-

3.4. kst8550.pdf Size:1092K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector Current: IC=-1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEB

HE8550S Datasheet (PDF)

1.1. he8550s.pdf Size:55K _hsmc

Spec. No. : HE6129
HI-SINCERITY
Issued Date : 1993.01.15
Revised Date : 2004.07.26
MICROELECTRONICS CORP.
Page No. : 1/5
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8550S is designed for general purpose amplifier applications.
Features
TO-92
• High DC Current gain: 100-500 at IC=150mA
• Complementary to HE8050S
Absolute Maximum Ratings
• Maximum Temperatures
Sto

4.1. he8550.pdf Size:156K _utc

UNISONIC TECHNOLOGIES CO., LTD
HE8550 PNP SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small signal PNP
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
FEATURES
* Collector Current up to 1.5A
* Collector-Emitter Voltage up

4.2. he8550l.pdf Size:21K _utc

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.
1
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC

 4.3. he8550.pdf Size:46K _hsmc

Spec. No. : HE6114
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2006.07.28
MICROELECTRONICS CORP.
Page No. : 1/4
HE8550
PNP Epitaxial Planar Transistor
Description
The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull
operation. TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature……………………………..

H8550S Datasheet (PDF)

1.1. h8550s.pdf Size:127K _shantou-huashan

PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H8550S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation……………………

5.1. lh8550plt1g.pdf Size:157K _upd

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8550PLT1G
PNP Silicon
Series
FEATURE S-LH8550PLT1G
High current capacity in compact package.
Series
IC =-1.5A.
Epitaxial planar type.
PNP complement: LH8550
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique

1
Site and Control Change Requirements; AEC-Q101 Qualified and

5.2. lh8550qlt1g.pdf Size:138K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8550PLT1G
PNP Silicon
Series
FEATURE S-LH8550PLT1G
High current capacity in compact package.
Series
IC =-1.5A.
Epitaxial planar type.
PNP complement: LH8550
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique

1
Site and Control Change Requirements; AEC-Q101 Qualified and

 5.3. h8550.pdf Size:138K _shantou-huashan

 Shantou Huashan Electronic Devices Co.,Ltd.
H8550
█ PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation

5.4. h8550.pdf Size:796K _kexin

SMD Type Transistors
PNP Transistors
H8550
■ Features
1.70 0.1
● Collector Power Dissipation: PC=0.5W
● Collector Current: IC=-1.5A
Comlementary to H8050
●
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -25 V
Emitter-base voltage VEBO —

Datasheets

Datasheet

PDF, 228 Кб

Выписка из документа

Is Now Part of To learn more about ON Semiconductor, please visit our website atwww.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a numberof patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON SemiconductorвЂs product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the rightto make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ONSemiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ONSemiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customerвЂstechnical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDAClass 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintendedor unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising outof, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductoris an Equal Opportunity/Affirmative Actio …

H8550 Datasheet (PDF)

1.1. lh8550plt1g.pdf Size:157K _upd

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8550PLT1G
PNP Silicon
Series
FEATURE S-LH8550PLT1G
High current capacity in compact package.
Series
IC =-1.5A.
Epitaxial planar type.
PNP complement: LH8550
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique

1
Site and Control Change Requirements; AEC-Q101 Qualified and

1.2. lh8550qlt1g.pdf Size:138K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8550PLT1G
PNP Silicon
Series
FEATURE S-LH8550PLT1G
High current capacity in compact package.
Series
IC =-1.5A.
Epitaxial planar type.
PNP complement: LH8550
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique

1
Site and Control Change Requirements; AEC-Q101 Qualified and

 1.3. h8550s.pdf Size:127K _shantou-huashan

PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H8550S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation……………………

1.4. h8550.pdf Size:138K _shantou-huashan

 Shantou Huashan Electronic Devices Co.,Ltd.
H8550
█ PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation

 1.5. h8550.pdf Size:796K _kexin

SMD Type Transistors
PNP Transistors
H8550
■ Features
1.70 0.1
● Collector Power Dissipation: PC=0.5W
● Collector Current: IC=-1.5A
Comlementary to H8050
●
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -25 V
Emitter-base voltage VEBO —

SS8550W Datasheet (PDF)

1.1. mmss8550w-j.pdf Size:187K _upd

MMSS8550W-L
MCC
Micro Commercial Components MMSS8550W-H
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
MMSS8550W-J
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plasti

1.2. mmss8550w-h.pdf Size:187K _upd

MMSS8550W-L
MCC
Micro Commercial Components MMSS8550W-H
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
MMSS8550W-J
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plasti

 1.3. mmss8550w-l.pdf Size:187K _upd

MMSS8550W-L
MCC
Micro Commercial Components MMSS8550W-H
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
MMSS8550W-J
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plasti

1.4. ss8550w.pdf Size:115K _secos

SS8550W
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
SOT-323
FEATURES
Collector
Dim Min Max
3
3
A 1.800 2.200
Power dissipation
1
1 B 1.150 1.350
2 Base
PCM : 0.2 W
C 0.800 1.000
Collector Current
D 0.300 0.400
2
ICM : -1.5 A A G 1.200 1.400
Emitter
L
H 0.000 0.100
Collector-base voltage
J 0.100 0.250
3
V(BR)CBO : — 40 V
S
To

 1.5. ss8550w.pdf Size:264K _wietron

SS8550W
PNP Plastic-Encapsulate Transistor
3
P b Lead(Pb)-Free
1
2
MAXIMUM RATINGS (TA=25? unless otherwise noted)
1. BASE
Symbol Parameter Value Units
2. EMITTER
3. COLLECTOR
V(BR)CBO Collector- Base Voltage -40 V
ICM Collector Current -1.5 A
SOT-323(SC-70)
.
PCM Power Dissipation (Tamb=25°C) W
0.2
TJ Junction Temperature -55 to +150 ?
Tstg Storage Temperature -55 to +150 ?
EL