Транзистор tip42c

Microsoft Products and Services Agreement (MPSA)

Just one agreement to open and manage

By using the Microsoft Products and Services Agreement, you can consolidate all your licensed assets for software and Online Services within a single, non-expiring agreement. In addition, you can purchase at any time from Zones in any quantity. And you can apply your organization’s volume discount for every purchase.

This consolidation streamlines the overall contract process and helps you get the full value of purchases across your organization. You can choose software, Online Services, or a hybrid solution customized to your needs. Add Software Assurance to software licenses for additional benefits.

Evaluate your licensing options with the Zones team that continues to win awards from Microsoft for operational excellence. Contact your Zones account executive or call 800.408.9663.

The MPSA is a foundational agreement that consolidates all applicable terms and conditions that are in the current Microsoft Business and Services Agreement (MBSA), Microsoft Select Plus Agreement, and the Microsoft Online Services Agreement. MPSA features include the following:

  • A single agreement with integrated purchasing for Online Services, software, and Software Assurance, offering a single way to acquire your asset portfolio
  • Purchasing Accounts that empower you to define and redefine your organization’s purchasing structure and that represent the entire organization and all entity types for easier asset management
  • Best overall pricing through consolidating points across Online Services and software

Suited for commercial organizations with 250 or more users, the MPSA is the best option for transactional purchases of Microsoft products and Online Services.

Interested in the cloud? The Office 365 Add-on can help you get there

Move to the cloud with the Office 365 Add-on, available for Select and Select Plus customers through the Microsoft Product and Services Agreement (MPSA).

  • Easy. Your existing Select or Select Plus agreement does not change. You retain all Software Assurance benefits, including rights to new product versions, support, training, and other services to deploy and accelerate adoption of Office 365.
  • Great Price. Pricing recognizes your existing investments in CAL Suites and Office with Software Assurance, while preserving your volume discounts for on-premises software and online services.
  • Flexible. Office 365 Add-on options provide flexibility, giving you an easy way to add Office 365 at any time, for any number of users, to any workload.

Since your Office 365 Add-on option is determined by your current licensing position, you should contact your Zones account executive or call 800.408.9663 to review your Microsoft agreement.

Биполярный транзистор MJD42CG — описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJD42CG

Маркировка: J42CG

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 20
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 3
MHz

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO-252

MJD42CG
Datasheet (PDF)

1.1. mjd42cg.pdf Size:173K _upd

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

4.1. mjd42ct4g.pdf Size:59K _upd

MJD41C (NPN)
MJD42C (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
SILICON
Features
POWER TRANSISTORS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
6 AMPERES
(No Suffix)
100 VOLTS, 20 WATTS
• Straight Lead Version in Plastic Sleeves (“1

4.2. mjd42c1g.pdf Size:173K _upd

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

 4.3. mjd42crlg.pdf Size:173K _upd

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

4.4. mjd41c mjd42c.pdf Size:195K _motorola

Order this document
MOTOROLA
by MJD41C/D
SEMICONDUCTOR TECHNICAL DATA
NPN
MJD41C*
Complementary Power
PNP
MJD42C*
Transistors
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
POWER TRANSISTORS
Straight Lead

 4.5. njvmjd41c njvmjd42c.pdf Size:173K _onsemi

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

4.6. mjd41c mjd42c.pdf Size:117K _onsemi

MJD41C (NPN)
MJD42C (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
SILICON
Features
POWER TRANSISTORS
Lead Formed for Surface Mount Applications in Plastic Sleeves
6 AMPERES
(No Suffix)
100 VOLTS, 20 WATTS
Straight Lead Version in Plastic Sleeves (1 Suffix)

4.7. mjd42c.pdf Size:241K _inchange_semiconductor

isc Silicon PNP Power Transistors MJD42C
DESCRIPTION
·DC Current Gain -h = 30(Min)@ I = -0.3A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Complement to Type MJD41C
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low

4.8. mjd42c.pdf Size:231K _lge

MJD42C(PNP)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Features
Designed for general purpose amplifier and low speed

switching applications.
Lead Formed for Surface Mount Applications in Plastic
Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
TO-252-2L
Lead Formed Version in 16 mm Tape and Reel (в

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

MPSA29 Datasheet (PDF)

1.1. mpsa29g.pdf Size:141K _update

MPSA28, MPSA29
MPSA29 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb—Free Packages are Available*
http://onsemi.com
COLLECTOR 3
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
2
Collector—Emitter Voltage MPSA28 VCES 80 Vdc
MPSA29 100
Collector—Base Voltage MPSA28 VCBO 80 Vdc
EMITTER 1
MPSA29 100
Emitter—Base Voltage VEBO 12 Vdc
Collector Current —

1.2. mpsa29rlrpg.pdf Size:141K _update

MPSA28, MPSA29
MPSA29 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb—Free Packages are Available*
http://onsemi.com
COLLECTOR 3
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
2
Collector—Emitter Voltage MPSA28 VCES 80 Vdc
MPSA29 100
Collector—Base Voltage MPSA28 VCBO 80 Vdc
EMITTER 1
MPSA29 100
Emitter—Base Voltage VEBO 12 Vdc
Collector Current —

 1.3. mpsa28 mpsa29.pdf Size:130K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MPSA28/D
Darlington Transistors
MPSA28
NPN Silicon
*
MPSA29
COLLECTOR 3
*Motorola Preferred Device
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating Symbol MPSA28 MPSA29 Unit
1
2
CollectorEmitter Voltage VCES 80 100 Vdc 3
CollectorBase Voltage VCBO 80 100 Vdc
CASE 2904, STYLE 1
EmitterBase Voltage VEBO 12 Vdc
TO92 (TO22

1.4. mpsa29.pdf Size:293K _fairchild_semi

Discrete POWER & Signal
Technologies
MPSA29
C TO-92
B
E
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03. See MPSA28 for characteristics.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 100 V
V Collector

TIP42B Datasheet (PDF)

1.1. tip42 tip42a tip42b tip42c.pdf Size:242K _fairchild_semi

1.2. tip42 tip42a tip42b tip42c to-220.pdf Size:237K _mcc

MCC
Micro Commercial Components
TM
TIP42/42A/42B/42C
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant(Note 1) («P» Suffix designates
RoHS Compliant. See ordering information)
Silicon PNP
The complementary NPN types are the TIP41 respectively
Epoxy meets UL 94 V-0 flammabil

 1.3. tip41 tip41a tip41b tip41c tip42 tip42a tip42b tip42c.pdf Size:93K _onsemi

TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
http://onsemi.com
Designed for use in general purpose amplifier and switching
applications.
6 AMPERE
Features
COMPLEMENTARY SILICON
ESD Ratings: Machine Model, C; > 400 V
POWER TRANSISTORS
Human Body Model, 3B; > 8000 V
40-60-80-100 VOLTS,
Epoxy Meets UL 94 V-

MJD42CG Datasheet (PDF)

1.1. mjd42cg.pdf Size:173K _upd

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

4.1. mjd42ct4g.pdf Size:59K _upd

MJD41C (NPN)
MJD42C (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
SILICON
Features
POWER TRANSISTORS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
6 AMPERES
(No Suffix)
100 VOLTS, 20 WATTS
• Straight Lead Version in Plastic Sleeves (“1

4.2. mjd42c1g.pdf Size:173K _upd

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

 4.3. mjd42crlg.pdf Size:173K _upd

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

4.4. mjd41c mjd42c.pdf Size:195K _motorola

Order this document
MOTOROLA
by MJD41C/D
SEMICONDUCTOR TECHNICAL DATA
NPN
MJD41C*
Complementary Power
PNP
MJD42C*
Transistors
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
POWER TRANSISTORS
Straight Lead

 4.5. njvmjd41c njvmjd42c.pdf Size:173K _onsemi

MJD41C,
NJVMJD41CT4G (NPN),
MJD42C,
NJVMJD42CT4G,
NJVMJD42CRLG (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
DPAK For Surface Mount Applications POWER TRANSISTORS
6 AMPERES
Designed for general purpose amplifier and low speed switching
100 VOLTS, 20 WATTS
applications.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
 S

4.6. mjd41c mjd42c.pdf Size:117K _onsemi

MJD41C (NPN)
MJD42C (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
SILICON
Features
POWER TRANSISTORS
Lead Formed for Surface Mount Applications in Plastic Sleeves
6 AMPERES
(No Suffix)
100 VOLTS, 20 WATTS
Straight Lead Version in Plastic Sleeves (1 Suffix)

4.7. mjd42c.pdf Size:241K _inchange_semiconductor

isc Silicon PNP Power Transistors MJD42C
DESCRIPTION
·DC Current Gain -h = 30(Min)@ I = -0.3A
FE C
·Collector-Emitter Sustaining Voltage-
: V = -100V(Min)
CEO(SUS)
·Complement to Type MJD41C
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low

4.8. mjd42c.pdf Size:231K _lge

MJD42C(PNP)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Features
Designed for general purpose amplifier and low speed

switching applications.
Lead Formed for Surface Mount Applications in Plastic
Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
TO-252-2L
Lead Formed Version in 16 mm Tape and Reel (в

WPT2F42 Datasheet (PDF)

1.1. wpt2f42.pdf Size:64K _willsemi

WPT2F42
WPT2F42
Single, PNP, -30V, -3A, Power Transistor Http//:www.willsemi.com
Descriptions
The WPT2F42 is PNP bipolar power transistor
with very low saturation voltage. This device is
suitable for use in charging circuit and other power
management. Standard Products WPT2F42 are
Pb-free and Halogen-free.
SOT-23-6L
C 1 6 C
Features
2
C 5 C
Ultra low collector-to-emitt

5.1. wpt2f06.pdf Size:339K _willsemi

WPT2F06
WPT2F06
PNP, General Purpose Transistors Http//:www.willsemi.com
Descriptions
The WPT2F06 is designed for general purpose
amplifier applications. Standard products are SOT-23
Pb-free and Halogen-free
(Top View)
Features
3
2A
 Complementary to WNT2F04
 Collector Current: IC=-0.2A
1 2
Marking :2A
1: BASE
2: EMITTER
3: COLLECTOR
Order information

5.2. wpt2f30.pdf Size:152K _willsemi

WPT2F30
WPT2F30
Single, PNP, -30V, -3A, Power Transistor Http//:www.willsemi.com
Descriptions
The WPT2F30 is PNP bipolar power transistor
with very low saturation voltage. This device is
suitable for use in charging circuit and other power
management. Standard Product WPT2F30 is
Pb-free. SOT-23-6L
C 1 6 C
C 2 5 C
Features
B 3 4 E
Pin configuration (Top view)
Ultra low

TIP42C Datasheet (PDF)

1.1. tip42 tip42a tip42b tip42c.pdf Size:242K _fairchild_semi

1.2. tip42 tip42a tip42b tip42c to-220.pdf Size:237K _mcc

MCC
Micro Commercial Components
TM
TIP42/42A/42B/42C
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant(Note 1) («P» Suffix designates
RoHS Compliant. See ordering information)
Silicon PNP
The complementary NPN types are the TIP41 respectively
Epoxy meets UL 94 V-0 flammabil

 1.3. tip41 tip41a tip41b tip41c tip42 tip42a tip42b tip42c.pdf Size:93K _onsemi

TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
http://onsemi.com
Designed for use in general purpose amplifier and switching
applications.
6 AMPERE
Features
COMPLEMENTARY SILICON
ESD Ratings: Machine Model, C; > 400 V
POWER TRANSISTORS
Human Body Model, 3B; > 8000 V
40-60-80-100 VOLTS,
Epoxy Meets UL 94 V-

1.4. tip42c.pdf Size:156K _utc

UNISONIC TECHNOLOGIES CO., LTD
TIP42C PNP PLANAR TRANSISTOR
PNP EPITAXIAL PLANAR
TRANSISTOR
? DESCRIPTION
The UTC TIP42C is a PNP epitaxial planar transistor,
designed for using in general purpose amplifier and switching
applications.
? FEATURES
* Complement to TIP41C
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
TIP4

 1.5. tip42cf.pdf Size:435K _kec

SEMICONDUCTOR TIP42CF
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
Complementary to TIP41CF.
_
A 10.0 + 0.3
_
+
B 15.0 0.3
E
C _
2.70 0.3
+
D 0.76+0.09/-0.05
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
MAXIMUM RATING (Ta=25 )
H 0.5+0.1/-0.05
_
+
J 13.6 0.5
L L
CHARACTERISTIC SYMBOL RATING UNIT R
K

1.6. tip42c.pdf Size:66K _kec

SEMICONDUCTOR TIP42C
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
R
FEATURES
S
Complementary to TIP41C.
P
D
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C 0.80
MAXIMUM RATING (Ta=25 )
_
+
D Φ3.60 0.20
T
E 3.00
CHARACTERISTIC SYMBOL RATING UNIT
F 6.70 MAX
_
G 13.60 + 0.50
L
VCBO -100 V
Collector-Base Voltage
H 5.60 MAX
C C
J 1.37 MAX
V

1.7. htip42c.pdf Size:37K _hsmc

Spec. No. : HE6733
HI-SINCERITY
Issued Date : 1994.08.10
Revised Date : 2004.11.19
MICROELECTRONICS CORP.
Page No. : 1/4
HTIP42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP42C is designed for use in general purpose amplifier and switching
applications.
TO-220
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperature ………………………………

1.8. sttip42c.pdf Size:480K _semtech

ST TIP42C
PNP Silicon Epitaxial Planar Transistor
for power switching and amplifier applications
TO-220 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter Symbol Value Unit
100 V
Collector Base Voltage -VCBO
100 V
Collector Emitter Voltage -VCEO
5 V
Emitter Base Voltage -VEBO
6 A
Collector Current -IC
10 A
Collector Current (Pulse) -ICP
2 A
Base Current

1.9. tip42c to220.pdf Size:173K _first_silicon

SEMICONDUCTOR
TIP42/42A/42B/42C
TECHNICAL DATA
A
O
C
F
E
TIP42/42A/42B/42C TRANSISTOR (PNP)
B
DIM MILLIMETERS
A 10.15 ± 0.15
B 15.30 MAX
C 1.3 0.1/-0.15
FEATURES
P
D 0 8 ± 0.1
E 3 8 ± 0.2
F 2.7 ± 0.2
Medium Power Linear Switching Applications
J
H 0.4 ± 0.15
D J 13.6 ± 0.2
Complement to TIP41/41A/41B/41C
H N 2.54 ± 0.2
N N
O 4.5 ± 0.2
1 2 3 P 2.7 ±

MPSA43 Datasheet (PDF)

1.1. mpsa42 mpsa43.pdf Size:121K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MPSA42/D
High Voltage Transistors
*
MPSA42
NPN Silicon
MPSA43
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol MPSA42 MPSA43 Unit
CASE 2904, STYLE 1
CollectorEmitter Voltage VCEO 300 200 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 300 200 Vdc
EmitterBase Voltage

1.2. mpsa42 mpsa43 2.pdf Size:104K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
MPSA42; MPSA43
NPN high-voltage transistors
Product data sheet 2004 Oct 11
Supersedes data of 1999 Apr 12
NXP Semiconductors Product data sheet
NPN high-voltage transistors MPSA42; MPSA43
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
High voltage (max. 300 V).
1 collector
2 base
APPLICATIONS
3 emitter

 1.3. mpsa42 mpsa43 4.pdf Size:47K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSA42; MPSA43
NPN high-voltage transistors
1999 Apr 12
Product specification
Supersedes data of 1997 Sep 04
Philips Semiconductors Product specification
NPN high-voltage transistors MPSA42; MPSA43
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
High voltage (max. 300 V).
1 collector
2 base
APPLICATIONS
3 em

1.4. mpsa43.pdf Size:26K _fairchild_semi

MPSA43
NPN High Voltage Amplifier
This device is designed for application as a video output to drive color
CRT and other high voltage applications.
Sourced from process 48.
See MPSA42 for characteristics.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * TA=25C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 200 V
VCBO Collect

 1.5. mpsa42 mpsa43npn.pdf Size:43K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. mpsa42 mpsa43 to-92.pdf Size:233K _mcc

MPSA42
MCC
Micro Commercial Components
TM
THRU
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
MPSA43
Fax: (818) 701-4939
Features
NPN Silicon High
Through Hole Package
150oC Junction Temperature Voltage Transistor
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
625mW
Lead Free Finish/RoHS Compliant («P

1.7. mpsa42 mpsa43.pdf Size:102K _onsemi

MPSA42, MPSA43
High Voltage Transistors
NPN Silicon
Features
http://onsemi.com
Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO Vdc
1
MPSA43 200
EMITTER
MPSA42 300
Collector-Base Voltage VCBO Vdc
MPSA43 200
MPSA42 300
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
TO-92

1.8. mpsa42 mpsa43.pdf Size:17K _utc

UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSA42/43 are high voltage transistors,
designed for telephone switch and high voltage
switch.
FEATURES
*Collector-Emitter voltage:
1
VCEO=300V(UTC MPSA42)
VCEO=200V(UTC MPSA43)
*High current gain
*Complement to UTC MPSA92/93
TO-92
*Collector Dissipation:
Pc(max)=625mW
1:EMITTER 2:BASE 3:

1.9. mpsa43.pdf Size:552K _kec

SEMICONDUCTOR MPSA42/43
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B C
FEATURES
·Complementary to MPSA92/93.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
MAXIMUM RATING (Ta=25℃)
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT
F 1.27
G 0.85
MPSA42 300 H 0.45
Collector-Base
_
VCBO H
V J 14.00 + 0.50
V

1.10. mpsa42 mpsa43.pdf Size:233K _kec

SEMICONDUCTOR MPSA42/43
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B C
FEATURES
Complementary to MPSA92/93.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
MAXIMUM RATING (Ta=25 )
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT
F 1.27
G 0.85
MPSA42 300 H 0.45
Collector-Base
_
VCBO H
V J 14.00 + 0.50
Volta

1.11. mpsa43.pdf Size:408K _wietron

MPSA43
High-Voltage NPN Transistors
1. EMITTER
P b Lead(Pb)-Free
2. BASE
3. COLLECTOR
1
2
3
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol
Value Unit
Collector-Emitter Voltage V
CEO 200 Vdc
Collector-Base Voltage VCBO 200
Vdc
VEBO
Emitter-Base Voltage Vdc
6.0
Collector Current IC
500 mAdc
PD 0.625
Total Device Dissipation T =25°C W
A
Junction Temperature T 150
j

Новый порядок лицензирования

Как стало известно CNews от источника, близкого к партнерам Microsoft, c 1 июля 2019 г. корпорация внесет изменения в действующие программы корпоративного лицензирования продуктов на территории России. Насколько известно CNews, программы корпоративного лицензирования в других странах не претерпят изменений.

Лицензионная программа Open License, по которой можно было приобрести лицензии в вечное пользование, прекратит свое существование. Взамен будет расширена Open Value: в нее Microsoft внесет покупки лицензий на постоянное пользование ПО и сервисов Microsoft без необходимости оплачивать опцию Software Assurance.

Важно отметить, что по новым правилам заказчики смогут приобретать лицензии по расширенной программе Open Value только у авторизованных реселлеров, которые, заключив прямое соглашение с Microsoft Ireland Operations Limited (MIOL), будут работать с существующими дистрибьюторами. В ответ на обращение CNews с просьбой прокомментировать озвученную выше информацию, пресс-служба Microsoft в России ответила: «Microsoft продолжает трансформировать свой бизнес, чтобы дать возможность каждому человеку и каждой организации в мире достигать большего

Мы оптимизируем наши процессы, чтобы гарантировать постоянное улучшение качества предоставляемых услуг и помочь российским заказчикам на пути цифровой трансформации. В рамках этого нового подхода мы вносим некоторые изменения в работу партнерской сети, которые помогут обеспечить нашим заказчикам максимально позитивный клиентский опыт»

В ответ на обращение CNews с просьбой прокомментировать озвученную выше информацию, пресс-служба Microsoft в России ответила: «Microsoft продолжает трансформировать свой бизнес, чтобы дать возможность каждому человеку и каждой организации в мире достигать большего. Мы оптимизируем наши процессы, чтобы гарантировать постоянное улучшение качества предоставляемых услуг и помочь российским заказчикам на пути цифровой трансформации. В рамках этого нового подхода мы вносим некоторые изменения в работу партнерской сети, которые помогут обеспечить нашим заказчикам максимально позитивный клиентский опыт».

На момент публикации этого материала официальный анонс изменений уже появился в партнерском разделе официального русскоязычного сайта Microsoft.

Комментарии партнеров Microsoft

CNews обратился к российским партнерам Microsoft за комментариями относительно изменения правил лицензирования ПО в России.

«Ни для кого не секрет, что программа лицензирования Microsoft является запутанным ребусом для большинства компаний, поэтому сокращение количества программ лицензирования за счет расширения возможностей текущих, позволит значительно упростить сотрудничество с Microsoft», – сказал Сергей Агаев, генеральный директор Comparex.

«На заказчиков, приобретающих лицензии Microsoft, влияния эти изменения не окажут, – отметил Михаил Степанюк, директор департамента ПО компании Merlion. – Так как Software Assurance ранее была необязательной опцией в Open License, то поэтому после объединения Open License с Open Value («расширение программы OV») у заказчика останется право покупки лицензий без Software Assurance, просто будут добавлены новые парт-номера в OV. Для рынка, считаем, изменения носят исключительно позитивный характер. Благодаря тому что продавать лицензии через OV будут вновь авторизованные партнеры, сроки поставок в цепочке «Microsoft – дистрибьютор – ресселер – заказчик» будут в результате новой процедуры лицензирования сокращены. Дополнительным плюсом для конечных корпоративных заказчиков будет подтвержденная авторизацией вендора надежность ресселеров».

По мнению Андрея Благоразумова, директора по развитию бизнеса с Microsoft компании SoftLine, изменения окажут положительное влияние на рынок.

«Сейчас заказчики путаются в большом количестве схем лицензирования, а нововведения существенно упростят понимание и скорость принятия решения, – отметил Благоразумов. – Эта более современная модель лицензирования принесет и другие преимущества заказчикам, такие как быстрый доступ к последним версиям ПО, возможность оплаты в рассрочку и другие».

Заместитель директора центра компетенций по вычислительным комплексам компании «Техносерв» Вадим Козырев считает, что сильного влияния на рынок это событие не окажет, так как данные программы лицензирования похожи.

«Главное отличие в том, что при Open License требуется сразу оплатить лицензии, а Open Value предусматривает ежегодные платежи и включает в себя Software Assurance, – пояснил Козырев. – Вариант, при котором Software Assurance становится необязательной опцией для Open Value, очень похож на Open License. Фактически это упрощение программ лицензирования. Переход на модель подписки (Open Value) – это модель «сервис как услуга» (SaaS), общая тенденция сегодняшнего рынка. Переход на такую форму взаимодействия стал общим трендом. Microsoft использует ее для таких продуктов, как Office 365, облако Azure, у Amazon – это платформа AWS, у Google – Cloud Platform. Так что Microsoft движется в общепринятом направлении. Однако рынок меняется постоянно, и ИТ через 5-10 лет будет другим. Сегодня многие CMB-компании частично отказываются от внутренней ИТ-службы в общепринятом виде. И в скором будущем многие компании уйдут от собственного ИТ и будут покупать все у провайдеров услуг в формате as a service – IaaS, PaaS, SaaS».

«Судя из анонса направленного нам дистрибьютором Software Assurance как и ранее будет включена важная опция для приобретения в рамках программ Open Value и Open Value Subscription, – прокомментировали измненения в пресс-службе ИТ-компании «КРОК». – Пока трудно комментировать данные изменения, так как никаких разъяснений насчет корректировки условий программ не отражено в официальном письме от правообладателя».

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STBV42 Datasheet (PDF)

1.1. stbv42d.pdf Size:206K _update

STBV42D 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途: 主要用于节能灯、 振荡电路。
日光灯电子镇流器及其它开关、 /Purpose: High frequency
electronic lighting ballast applications,converters, inverters, switching regulators, etc.
特点:高压性能好,低动态参数变化,开关速度快。/Features: High voltage capability, low
spread of dynamic

1.2. stbv42d.pdf Size:113K _st

STBV42D
High voltage fast-switching NPN power transistor
Preliminary data
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Integrated free-wheeling diode
Application
Compact fluorescent lamps (CFLs)
TO-92
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
Figure 1. Inter

 1.3. stbv42.pdf Size:262K _st

STBV42
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
Compact fluorescent lamps (CFLs)
SMPS for battery charger
TO-92 TO-92AP
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
Figure 1. Internal schematic di

MMBTA42L Datasheet (PDF)

1.1. mmbta42lt1g.pdf Size:93K _upd

MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
• AEC-Q101 Qualified and PPAP Capable
COLLECTOR
• S Prefix for Automotive and Other Applications Requiring Unique
3
Site and Control Change Requirements
1
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Characteristic Symb

1.2. mmbta42lt3g.pdf Size:93K _upd

MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
• AEC-Q101 Qualified and PPAP Capable
COLLECTOR
• S Prefix for Automotive and Other Applications Requiring Unique
3
Site and Control Change Requirements
1
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Characteristic Symb

 1.3. mmbta42l mmbta43.pdf Size:152K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MMBTA42LT1/D
High Voltage Transistors
*
MMBTA42LT1
NPN Silicon
COLLECTOR
MMBTA43LT1
3
*Motorola Preferred Device
1
BASE
2
3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol MMBTA42 MMBTA43 Unit
2
CollectorEmitter Voltage VCEO 300 200 Vdc
CollectorBase Voltage VCBO 300 200 Vdc
CASE 31808, STYLE 6
EmitterBase Voltage VEB

1.4. mmbta42lt1 mmbta43lt1.pdf Size:89K _onsemi

MMBTA42LT1G,
MMBTA43LT1G
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
Compliant
3
1
BASE
MAXIMUM RATINGS
2
Characteristic Symbol Value Unit
EMITTER
Collector-Emitter Voltage VCEO Vdc
MMBTA42 300
MMBTA43 200
3
Collector-Base Voltage VCBO Vdc
MMBTA42 300
MMBTA43 200 1
2
Emitter-Base V

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