Irf4905 характеристики

IRF4905L Datasheet (PDF)

1.1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

PD — 97034
IRF4905SPbF
IRF4905LPbF
Features HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
150°C Operating Temperature
Fast Switching
RDS(on) = 20mΩ
Repetitive Avalanche Allowed up to Tjmax
G
Some Parameters Are Differrent from
ID = -42A
IRF4905S
S
Lead-Free
D
D
Description
Features of this design are a 150°C junction oper

3.1. irf4905pbf.pdf Size:181K _international_rectifier

PD — 94816
IRF4905PbF
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.02Ω
G
P-Channel
Fully Avalanche Rated
ID = -74A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

3.2. irf4905s.pdf Size:163K _international_rectifier

PD — 9.1478A
IRF4905S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF4905S)
VDSS = -55V
Low-profile through-hole (IRF4905L)
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

 3.3. irf4905.pdf Size:108K _international_rectifier

PD — 9.1280C
IRF4905
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

3.4. irf4905.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.02Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliab

IRF440 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF440

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125
W

Предельно допустимое напряжение сток-исток (Uds): 500
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 8
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 68.5
nC

Время нарастания (tr): 15
ns

Выходная емкость (Cd): 230
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.85
Ohm

Тип корпуса: TO3

IRF440
Datasheet (PDF)

1.1. irf440 irf441 irf442 irf443.pdf Size:132K _upd



1.2. irf440.pdf Size:142K _international_rectifier

PD — 90372A
REPETITIVE AVALANCHE AND dv/dt RATED IRF440
500V, N-CHANNEL
HEXFET?TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF440 500V 0.85? 8.0A
The HEXFET?technology is the key to International
Rectifiers advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
State of the Art design achieves: very

 5.1. irf4410a irf4410h.pdf Size:671K _upd

RoHS
IRF4410 Series RoHS
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
(97A, 100Volts)
DESCRIPTION
The Nell IRF4410 is a three-terminal silicon
D
device with current conduction capability of 97A,
D
fast switching speed, low on-state resistance,
breakdown voltage rating of 100V ,and max.
threshold voltage of 4 volts.
G
They are designed for use in application

5.2. irf4435.pdf Size:211K _international_rectifier

PD- 94243
IRF4435
HEXFET Power MOSFET
Ultra Low On-Resistance
A
1 8
S D
P-Channel MOSFET
VDSS = -30V
2 7
Surface Mount
S D
Available in Tape & Reel
3 6
S D
4 5
G D
RDS(on) = 0.020?
Top View
Description
These P-channel HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. Thi

 5.3. irf441.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF441
FEATURES
·V Rated at ±20V
GS
·Silicon Gate for Fast Switching Speeds
·I ,V ,SOA and V specified at Elevated
DSS DS(on) GS(th)
temperature
·Rugged
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as

Другие MOSFET… IRF3415S
, IRF350
, IRF3515S
, IRF360
, IRF3710
, IRF3710L
, IRF3710S
, IRF430
, IRF9540N
, IRF450
, IRF451
, IRF452
, IRF453
, IRF460
, IRF4905
, IRF4905L
, IRF4905S
.

IRF4905S MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF4905S

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 200
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 74
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 120
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.02
Ohm

Тип корпуса: D2PAK

IRF4905S
Datasheet (PDF)

1.1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

PD — 97034
IRF4905SPbF
IRF4905LPbF
Features HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
150°C Operating Temperature
Fast Switching
RDS(on) = 20mΩ
Repetitive Avalanche Allowed up to Tjmax
G
Some Parameters Are Differrent from
ID = -42A
IRF4905S
S
Lead-Free
D
D
Description
Features of this design are a 150°C junction oper

1.2. irf4905s.pdf Size:163K _international_rectifier

PD — 9.1478A
IRF4905S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF4905S)
VDSS = -55V
Low-profile through-hole (IRF4905L)
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

 3.1. irf4905pbf.pdf Size:181K _international_rectifier

PD — 94816
IRF4905PbF
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.02Ω
G
P-Channel
Fully Avalanche Rated
ID = -74A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

3.2. irf4905.pdf Size:108K _international_rectifier

PD — 9.1280C
IRF4905
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

 3.3. irf4905.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.02Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliab

Другие MOSFET… IRF440
, IRF450
, IRF451
, IRF452
, IRF453
, IRF460
, IRF4905
, IRF4905L
, 2SK105
, IRF510
, IRF510A
, IRF510S
, IRF511
, IRF512
, IRF513
, IRF520
, IRF520A
.

IRF513 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF513

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 43
W

Предельно допустимое напряжение сток-исток (Uds): 80
V

Максимально допустимый постоянный ток стока (Id): 4.9
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 0.8
Ohm

Тип корпуса: TO220

IRF513
Datasheet (PDF)

5.1. irf510pbf.pdf Size:201K _upd

IRF510, SiHF510
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
Available
• Repetitive Avalanche Rated
RDS(on) ()VGS = 10 V 0.54
RoHS*
• 175 °C Operating Temperature
COMPLIANT
Qg (Max.) (nC) 8.3
• Fast Switching
Qgs (nC) 2.3
• Ease of Paralleling
Qgd (nC) 3.8
• Simple Drive Requirements
Configuration Single
• Compli

5.2. irf510strlpbf irf510strrpbf.pdf Size:196K _upd

IRF510S, SiHF510S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
• Surface Mount
RDS(on) ()VGS = 10 V 0.54
• Available in Tape and Reel
Qg (Max.) (nC) 8.3 • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
Qgs (nC) 2.3
• 175 °C Operating Temperature
Qgd (nC) 3.8
• Fast Switching
• Ea

 5.3. irf510.pdf Size:151K _fairchild_semi

5.4. irf510a.pdf Size:252K _fairchild_semi

IRF510A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
n Avalanche Rugged Technology
RDS(on) = 0.4 ?
n Rugged Gate Oxide Technology
n Lower Input Capacitance
ID = 5.6 A
n Improved Gate Charge
n Extended Safe Operating Area
TO-220
n 175C Operating Temperature
n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.289 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absol

 5.5. irf510pbf.pdf Size:239K _international_rectifier

PD — 95364
IRF510PbF
Lead-Free
6/10/04
Document Number: 91015 www.vishay.com
1
IRF510PbF
Document Number: 91015 www.vishay.com
2
IRF510PbF
Document Number: 91015 www.vishay.com
3
IRF510PbF
Document Number: 91015 www.vishay.com
4
IRF510PbF
Document Number: 91015 www.vishay.com
5
IRF510PbF
Document Number: 91015 www.vishay.com
6
IRF510PbF
TO-220AB Package Outline
Dimen

5.6. irf510s.pdf Size:325K _international_rectifier

PD — 95540
IRF510SPbF
Lead-Free
SMD-220
7/21/04
Document Number: 91016 www.vishay.com
1
IRF510SPbF
Document Number: 91016 www.vishay.com
2
IRF510SPbF
Document Number: 91016 www.vishay.com
3
IRF510SPbF
Document Number: 91016 www.vishay.com
4
IRF510SPbF
Document Number: 91016 www.vishay.com
5
IRF510SPbF
Document Number: 91016 www.vishay.com
6
IRF510SPbF
Peak Diode Reco

5.7. irf510.pdf Size:175K _international_rectifier

5.8. irf510a.pdf Size:937K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
?
RDS(on) = 0.4
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.6 A
Improved Gate Charge
Extended Safe Operating Area
?
175 Operating Temperature

Lower Leakage Current : 10 A (Max.) @ VDS = 100V
?
Lower RDS(ON) : 0.289 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings

Другие MOSFET… IRF4905
, IRF4905L
, IRF4905S
, IRF510
, IRF510A
, IRF510S
, IRF511
, IRF512
, 2SK4106
, IRF520
, IRF520A
, IRF520FI
, IRF520N
, IRF520NS
, IRF521
, IRF5210
, IRF5210L
.

IRF513 Datasheet (PDF)

5.1. irf510pbf.pdf Size:201K _upd

IRF510, SiHF510
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
Available
• Repetitive Avalanche Rated
RDS(on) ()VGS = 10 V 0.54
RoHS*
• 175 °C Operating Temperature
COMPLIANT
Qg (Max.) (nC) 8.3
• Fast Switching
Qgs (nC) 2.3
• Ease of Paralleling
Qgd (nC) 3.8
• Simple Drive Requirements
Configuration Single
• Compli

5.2. irf510strlpbf irf510strrpbf.pdf Size:196K _upd

IRF510S, SiHF510S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
• Surface Mount
RDS(on) ()VGS = 10 V 0.54
• Available in Tape and Reel
Qg (Max.) (nC) 8.3 • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
Qgs (nC) 2.3
• 175 °C Operating Temperature
Qgd (nC) 3.8
• Fast Switching
• Ea

 5.3. irf510.pdf Size:151K _fairchild_semi

5.4. irf510a.pdf Size:252K _fairchild_semi

IRF510A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
n Avalanche Rugged Technology
RDS(on) = 0.4 ?
n Rugged Gate Oxide Technology
n Lower Input Capacitance
ID = 5.6 A
n Improved Gate Charge
n Extended Safe Operating Area
TO-220
n 175C Operating Temperature
n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.289 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absol

 5.5. irf510pbf.pdf Size:239K _international_rectifier

PD — 95364
IRF510PbF
Lead-Free
6/10/04
Document Number: 91015 www.vishay.com
1
IRF510PbF
Document Number: 91015 www.vishay.com
2
IRF510PbF
Document Number: 91015 www.vishay.com
3
IRF510PbF
Document Number: 91015 www.vishay.com
4
IRF510PbF
Document Number: 91015 www.vishay.com
5
IRF510PbF
Document Number: 91015 www.vishay.com
6
IRF510PbF
TO-220AB Package Outline
Dimen

5.6. irf510s.pdf Size:325K _international_rectifier

PD — 95540
IRF510SPbF
Lead-Free
SMD-220
7/21/04
Document Number: 91016 www.vishay.com
1
IRF510SPbF
Document Number: 91016 www.vishay.com
2
IRF510SPbF
Document Number: 91016 www.vishay.com
3
IRF510SPbF
Document Number: 91016 www.vishay.com
4
IRF510SPbF
Document Number: 91016 www.vishay.com
5
IRF510SPbF
Document Number: 91016 www.vishay.com
6
IRF510SPbF
Peak Diode Reco

5.7. irf510.pdf Size:175K _international_rectifier

5.8. irf510a.pdf Size:937K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
?
RDS(on) = 0.4
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.6 A
Improved Gate Charge
Extended Safe Operating Area
?
175 Operating Temperature

Lower Leakage Current : 10 A (Max.) @ VDS = 100V
?
Lower RDS(ON) : 0.289 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings

IRF4905PBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF4905PBF

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 200
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 74
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 180
nC

Время нарастания (tr): 99
ns

Выходная емкость (Cd): 1400
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.02
Ohm

Тип корпуса: TO-220AB

IRF4905PBF
Datasheet (PDF)

1.1. irf4905pbf.pdf Size:181K _international_rectifier

PD — 94816
IRF4905PbF
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.02Ω
G
P-Channel
Fully Avalanche Rated
ID = -74A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

3.1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

PD — 97034
IRF4905SPbF
IRF4905LPbF
Features HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
150°C Operating Temperature
Fast Switching
RDS(on) = 20mΩ
Repetitive Avalanche Allowed up to Tjmax
G
Some Parameters Are Differrent from
ID = -42A
IRF4905S
S
Lead-Free
D
D
Description
Features of this design are a 150°C junction oper

3.2. irf4905s.pdf Size:163K _international_rectifier

PD — 9.1478A
IRF4905S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF4905S)
VDSS = -55V
Low-profile through-hole (IRF4905L)
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

 3.3. irf4905.pdf Size:108K _international_rectifier

PD — 9.1280C
IRF4905
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

3.4. irf4905.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.02Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliab

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

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