Bt137

DIP Type
Thyristor
TRIACS Thyristor
BT137-600E

■ Features

● Repetitive peak off-state voltages :600V

● RMS on-state current :8A

● Non-repetitive peak on-state current :65A

T2 T1
G
TO-220

9.90 ± 0.20

(8.70)

ø3.60 ± 0.10

1.27 ± 0.10

123

1.52 ± 0.10

2.54TYP

[2.54 ± 0.20

0.80 ± 0.10

2.54TYP

[2.54 ± 0.20

10.00 ± 0.20

4.50 ± 0.20

1.30
+0.10
–0.05
0.50
+0.10
–0.05

2.40 ± 0.20

1 Main Terminal 1

2 Main Terminal 2

3 Gate

■ Absolute Maximum Ratings Ta = 25℃

Parameter
Peak Repetitive Forward and Reverse Blocking Voltages

RMS on-state Current @ full sine wave; Tmb ≤ 102 °C

Non-Repetitive Peak on-state Current (t=20ms)
Non-Repetitive Peak on-state Current (t=16.7ms)
Circuit Fusing Considerations (t = 10ms)
Peak Gate Current
Peak Gate Voltage
Peak Gate Power
Average Gate Power
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Mounting Base @ full cycle
Thermal Resistance Junction to Mounting Base @ half cycle
junction Temperature
Storage Temperature range
Symbol

VDRM VRRM

IT(RMS)

ITSM

I2t

IGM

VGM

PGM

PG(AV)

RthJA

RthJB

TJ

Tstg

Rating
600
8
65
71
21
2
5
5
0.5
60
2
2.4
125
-40 to 150
Unit
V
A

A2s

A
V
W
K/W
℃

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DIP Type
Thyristor
TRIACS Thyristor
BT137-600E

■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)

Parameter
Repetitive Peak off-state Voltages
Off-state Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Trigger Current
Latching Current
Holding Current
Repetitive Rate of rise of on-state
Current after Triggering
Critical Rate of rise of off-state Voltage
Critical Rate of Change of Commutating
Voltage
Gate Controlled turn-on time
Symbol
Test Conditions

VDRM ID=IR=50uA

ID VDRM(Max)=VD,TJ=125℃

VTM IT=10A

VD=12V, IT=100mA

VGT

VD=400V, IT=100mA,TJ=125℃

T2+ G+

IGT VD=12V, IT=100mA

T2+ G-

T2- G-

T2- G+

T2+ G+

IL VD=12V, IGT=100mA

T2+ G-

T2- G-

T2- G+

IH VD=12V; IG=100mA

T2+ G+

dIT/dt

T2+ G-

T2- G-

T2- G+

dVD/dt

VDM=67% VDRM(max); Tj=125℃

exponential waveform; gate open circuit

dVcom/dt

VDM=400V; Tj=95℃;IT(RMS) = 8 A;

dIcom/dt = 3.6 A/ms; gate open circuit

tgt

ITM=12A; VD=VDRM(max),IG=100mA;

dIG/dt=5A/us

Min
600
0.25
50
Typ.
250
20
2
Max
0.5
1.65
1.5
25
25
25
70
30
45
30
45
20
50
50
50
10
Unit
V
mA
V
mA
mA
A/us
V/us
us

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DIP Type
Thyristor
TRIACS Thyristor
BT137-600E

■ Typical Characterisitics

12 Ptot / W

BT137
10
1
8
6
Tmb(max) / C

= 180 101

120 105

90
109
60

30 113

4 117
2 121
0 125
0 2 4 6 8 10
IT(RMS) / A

Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where α = conduction angle.

10 IT(RMS) / A

8
BT137
102 C
6
4
2

0-50 0 50 100 150

Tmb / C

Fig.4. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.

1000 ITSM / A

BBTT113377

IT
ITSM
time
Tj initial = 25 C max
100

dIT/dt limit

T2- G+ quadrant
1100us
100us
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp ≤ 20ms.

25 IT(RMS) / A

BT137
20
15
10
5
00.01
0.1
1
surge duration / s
10
Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb ≤ 102˚C.

80 ITSM / A

70
60
50
BT137
IT ITSM
T time
Tj initial = 25 C max
40
30
20
10

1 10 100 1000

Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.
VGT(Tj)

1.6 VGT(25 C)

BT136
1.4
1.2
1
0.8
0.6
0.4-50
0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj

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