Ao4409 mosfet. datasheet pdf. equivalent

SI4483ADY Datasheet (PDF)

1.1. si4483ady.pdf Size:230K _vishay

Si4483ADY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) () ID (A)d Qg (Typ.)
Definition
0.0088 at VGS = — 10 V — 19.2
• TrenchFET Power MOSFET
— 30 44.8 nC
0.0153 at VGS = — 4.5 V — 14.6
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS

2.1. si4483ad.pdf Size:227K _vishay

Si4483ADY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (?) ID (A)d Qg (Typ.)
Definition
0.0088 at VGS = — 10 V — 19.2
TrenchFET Power MOSFET
— 30 44.8 nC
0.0153 at VGS = — 4.5 V — 14.6
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
SO-8
Ad

 4.1. si4483edy.pdf Size:248K _vishay

Si4483EDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω)ID (A)
Available
0.0085 at VGS = — 10 V
— 14
— 30 • TrenchFET Power MOSFET
0.014 at VGS = — 4.5 V
— 11
• ESD Protection: 3000 V
APPLICATIONS
• Notebook PC
— Load Switch
— Adapter Switch
S
SO-8
S D
1 8
S D
2 7
S D

4.2. si4483ed.pdf Size:245K _vishay

Si4483EDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (?)ID (A)
Available
0.0085 at VGS = — 10 V
— 14
— 30 TrenchFET Power MOSFET
0.014 at VGS = — 4.5 V
— 11
ESD Protection: 3000 V
APPLICATIONS
Notebook PC
— Load Switch
— Adapter Switch
S
SO-8
S D
1 8
S D
2 7
S D
3 6
G D
4

AM4407P Datasheet (PDF)

1.1. am4407p.pdf Size:210K _upd-mosfet

Analog Power AM4407P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
PRODUCT SUMMARY
High Cell Density process. Low rDS(on) assures
VDS (V) rDS(on) m(Ω) ID (A)
minimal power loss and conserves energy, making
this device ideal for use in power management
9 @ VGS = -10V -15
-30
circuitry. Typical applications are PWMDC-DC
13 @ VGS = -4.5V -11
converter

1.2. am4407pe.pdf Size:117K _upd-mosfet

Analog Power AM4407PE
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
PRODUCT SUMMARY
high cell density trench process to provide low
VDS (V) rDS(on) m(Ω) ID (A)
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
9 @ VGS = -10V -15
-30
converters and power management in portable and
13 @ VGS = -4.5V -11
ba

 1.3. am4407p.pdf Size:210K _analog_power

Analog Power AM4407P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
PRODUCT SUMMARY
High Cell Density process. Low rDS(on) assures
VDS (V) rDS(on) m(Ω) ID (A)
minimal power loss and conserves energy, making
this device ideal for use in power management
9 @ VGS = -10V -15
-30
circuitry. Typical applications are PWMDC-DC
13 @ VGS = -4.5V -11
converter

1.4. am4407pe.pdf Size:117K _analog_power

Analog Power AM4407PE
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
PRODUCT SUMMARY
high cell density trench process to provide low
VDS (V) rDS(on) m(Ω) ID (A)
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
9 @ VGS = -10V -15
-30
converters and power management in portable and
13 @ VGS = -4.5V -11
ba

Биполярный транзистор 2SC4407 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4407

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 25
V

Макcимальный постоянный ток коллектора (Ic): 0.05
A

Предельная температура PN-перехода (Tj): 125
°C

Граничная частота коэффициента передачи тока (ft): 3000
MHz

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO236

2SC4407
Datasheet (PDF)

1.1. 2sc4407.pdf Size:105K _sanyo

Ordering number:EN2760
NPN Epitaxial Planar Silicon Transistor
2SC4407
VHF/UHF Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF/UHF mixers, frequency converters, local
unit:mm
oscillators.
2059B

0.3
Features
0.15
High cutoff frequency : fT=3.0GHz typ
3
High power gain : PG=12dB typ (f=0.9GHz)
0~0.1
Small noise figure : NF=3.0dB typ (f

4.1. 2sc4409.pdf Size:150K _toshiba

2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Unit: mm
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A)
C
• High speed switching time: t = 500ns (typ.)
stg
• Small flat package
• P = 1~2 W (Mounted on ceramic substrate)
C
• Complementary to 2SA1681
Ma

4.2. 2sc4408.pdf Size:186K _toshiba



 4.3. 2sc4404.pdf Size:113K _sanyo

Ordering number:EN2757
NPN Epitaxial Planar Silicon Transistor
2SC4404
UHF Local Oscillator,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF OSC, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=2.2dB typ (f=0.9GHz)
0~0.1
Very

4.4. 2sc4406.pdf Size:105K _sanyo

Ordering number:EN2759A
NPN Epitaxial Planar Silicon Transistor
2SC4406
VHF Frequency Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF mixer, frequency converters, local oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=1.2GHz typ
0.15
High power gain : PG=15dB typ (f=0.4GHz)
3
Good dependence of fT on current.
0~0.1

 4.5. 2sc4405.pdf Size:112K _sanyo

Ordering number:EN2758
NPN Epitaxial Planar Silicon Transistor
2SC4405
UHF, Low-Noise,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF, low-noise amplifiers, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=1.5dB typ (f=0.9GHz)
0~0

4.6. 2sc4403.pdf Size:112K _sanyo

Ordering number:EN2756
NPN Epitaxial Planar Silicon Transistor
2SC4403
VHF/UHF Local Oscillator Applications
Applications Package Dimensions
VHF/UHF oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=3.0GHz typ
0.15
High power gain : MAG=12dB typ (f=0.9GHz)
3
Small noise figure : NF=2.5dB typ (f=0.9GHz)
0~0.1
Very small-sized package permitti

4.7. 2sc4400.pdf Size:79K _sanyo

Ordering number:EN3195
NPN Epitaxial Planar Silicon Transistor
2SC4400
High-Frequency
General-Purpose Amplifier Applications
Features Package Dimensions
High power gain.
unit:mm
High cutoff frequency.
2059B
Small Cob, Cre.

Very small-sized package permitting the 2SC4400-
0.3
0.15
applied sets to be made small and slim.
3
0~0.1
1 2
0.3 0.6
0.65 0.65
0.9
2

4.8. 2sc4401.pdf Size:119K _sanyo

Ordering number:EN2754
NPN Epitaxial Planar Silicon Transistor
2SC4401
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=11dB typ (VCE=3V, IC=3mA)
: NF=3.0dB typ (VCE

4.9. 2sc4402.pdf Size:120K _sanyo

Ordering number:EN2755
NPN Epitaxial Planar Silicon Transistor
2SC4402
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=12dB typ (VCE=3V, IC=10mA)
: NF=1.5dB typ (VC

4.10. 2sc4409.pdf Size:1046K _kexin

SMD Type Transistors
NPN Transistors
2SC4409
1.70 0.1
■ Features
● Low collector saturation voltage
● High speed switching time
● Small flat package
0.42 0.1
0.46 0.1
● PC = 1~2 W (Mounted on a ceramic substrate)
● Complementary to 2SA1681
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

AO4406A Datasheet (PDF)

1.1. ao4406a.pdf Size:328K _aosemi

AO4406A
30V N-Channel MOSFET
General Description Product Summary
VDS
30V
The AO4406A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
ID (at VGS=10V) 13A
This device is suitable for high side switch in SMPS and
RDS(ON) (at VGS=10V) 1.2. ao4406a.pdf Size:1723K _kexin

SMD Type MOSFET
N-Channel MOSFET
AO4406A (KO4406A)
SOP-8
■ Features
● VDS (V) = 30V
● ID = 13 A (VGS = 10V)
● RDS(ON) ＜ 11.5mΩ (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 15.5mΩ (VGS = 4.5V)
1 Source 5 Drain
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30
V

 4.1. ao4406.pdf Size:1498K _kexin

SMD Type MOSFET
N-Channel MOSFET
AO4406 (KO4406)
SOP-8
■ Features
● VDS (V) = 30V
D
● ID = 11.5 A (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 14mΩ (VGS = 10V)
● RDS(ON) ＜ 16.5mΩ (VGS = 4.5V)
1 Source 5 Drain
6 Drain
● RDS(ON) ＜ 26mΩ (VGS = 2.5V) 2 Source
7 Drain
3 Source
G
8 Drain
4 Gate
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit

AO4407 Datasheet (PDF)

1.1. ao4407a.pdf Size:207K _aosemi

AO4407A
30V P-Channel MOSFET
General Description Product Summary
The AO4407A uses advanced trench technology to VDS = -30V
provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as RDS(ON) 1.2. ao4407.pdf Size:340K _aosemi

AO4407
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO4407 combines advanced trench MOSFET
technology with a low resistance package to provide
ID (at VGS=-20V) -12A
extremely low RDS(ON). This device is ideal for load switch
RDS(ON) (at VGS=-20V)

 1.3. ao4407a.pdf Size:1643K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4407A (KO4407A)
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 11mΩ (VGS =-20V)
● RDS(ON) ＜ 13mΩ (VGS =-10V)
1 Source 5 Drain
● RDS(ON) ＜ 17mΩ (VGS =-6V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Dr

1.4. ao4407.pdf Size:2315K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4407
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 13mΩ (VGS =-20V)
D
● RDS(ON) ＜ 14mΩ (VGS =-10V) D
1 Source 5 Drain
● RDS(ON) ＜ 30mΩ (VGS =-5V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drai

AO4407A Datasheet (PDF)

1.1. ao4407a.pdf Size:207K _aosemi

AO4407A
30V P-Channel MOSFET
General Description Product Summary
The AO4407A uses advanced trench technology to VDS = -30V
provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as RDS(ON) 1.2. ao4407a.pdf Size:1643K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4407A (KO4407A)
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 11mΩ (VGS =-20V)
● RDS(ON) ＜ 13mΩ (VGS =-10V)
1 Source 5 Drain
● RDS(ON) ＜ 17mΩ (VGS =-6V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Dr

 4.1. ao4407.pdf Size:340K _aosemi

AO4407
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO4407 combines advanced trench MOSFET
technology with a low resistance package to provide
ID (at VGS=-20V) -12A
extremely low RDS(ON). This device is ideal for load switch
RDS(ON) (at VGS=-20V) 4.2. ao4407.pdf Size:2315K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4407
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 13mΩ (VGS =-20V)
D
● RDS(ON) ＜ 14mΩ (VGS =-10V) D
1 Source 5 Drain
● RDS(ON) ＜ 30mΩ (VGS =-5V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drai

AO4405 Datasheet (PDF)

1.1. ao4405.pdf Size:378K _aosemi

AO4405
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO4405 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
ID (at VGS=-10V) -6A
suitable for use as a load switch or in PWM applications.
RDS(ON) (at VGS=-10V) 1.2. ao4405e.pdf Size:398K _aosemi

AO4405E
30V P-Channel MOSFET
General Description Product Summary
VDS -30V
• Trench Power LV (P-ch) MOSFET technology
• Low RDS(ON)
ID (at VGS=-10V) -6A
• Low Gate Charge
RDS(ON) (at VGS=-10V)

 1.3. ao4405.pdf Size:2524K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4405 (KO4405)
SOP-8
■ Features
● VDS (V) =-30V
● ID =-6 A (VGS =-10V)
1.50 0.15
● RDS(ON) ＜ 50mΩ (VGS =-10V)
● RDS(ON) ＜ 85mΩ (VGS =-4.5V)
1 Source 5 Drain
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -30

2SC4407 Datasheet (PDF)

1.1. 2sc4407.pdf Size:105K _sanyo

Ordering number:EN2760
NPN Epitaxial Planar Silicon Transistor
2SC4407
VHF/UHF Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF/UHF mixers, frequency converters, local
unit:mm
oscillators.
2059B

0.3
Features
0.15
High cutoff frequency : fT=3.0GHz typ
3
High power gain : PG=12dB typ (f=0.9GHz)
0~0.1
Small noise figure : NF=3.0dB typ (f

4.1. 2sc4409.pdf Size:150K _toshiba

2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Unit: mm
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A)
C
• High speed switching time: t = 500ns (typ.)
stg
• Small flat package
• P = 1~2 W (Mounted on ceramic substrate)
C
• Complementary to 2SA1681
Ma

4.2. 2sc4408.pdf Size:186K _toshiba



 4.3. 2sc4404.pdf Size:113K _sanyo

Ordering number:EN2757
NPN Epitaxial Planar Silicon Transistor
2SC4404
UHF Local Oscillator,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF OSC, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=2.2dB typ (f=0.9GHz)
0~0.1
Very

4.4. 2sc4406.pdf Size:105K _sanyo

Ordering number:EN2759A
NPN Epitaxial Planar Silicon Transistor
2SC4406
VHF Frequency Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF mixer, frequency converters, local oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=1.2GHz typ
0.15
High power gain : PG=15dB typ (f=0.4GHz)
3
Good dependence of fT on current.
0~0.1

 4.5. 2sc4405.pdf Size:112K _sanyo

Ordering number:EN2758
NPN Epitaxial Planar Silicon Transistor
2SC4405
UHF, Low-Noise,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF, low-noise amplifiers, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=1.5dB typ (f=0.9GHz)
0~0

4.6. 2sc4403.pdf Size:112K _sanyo

Ordering number:EN2756
NPN Epitaxial Planar Silicon Transistor
2SC4403
VHF/UHF Local Oscillator Applications
Applications Package Dimensions
VHF/UHF oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=3.0GHz typ
0.15
High power gain : MAG=12dB typ (f=0.9GHz)
3
Small noise figure : NF=2.5dB typ (f=0.9GHz)
0~0.1
Very small-sized package permitti

4.7. 2sc4400.pdf Size:79K _sanyo

Ordering number:EN3195
NPN Epitaxial Planar Silicon Transistor
2SC4400
High-Frequency
General-Purpose Amplifier Applications
Features Package Dimensions
High power gain.
unit:mm
High cutoff frequency.
2059B
Small Cob, Cre.

Very small-sized package permitting the 2SC4400-
0.3
0.15
applied sets to be made small and slim.
3
0~0.1
1 2
0.3 0.6
0.65 0.65
0.9
2

4.8. 2sc4401.pdf Size:119K _sanyo

Ordering number:EN2754
NPN Epitaxial Planar Silicon Transistor
2SC4401
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=11dB typ (VCE=3V, IC=3mA)
: NF=3.0dB typ (VCE

4.9. 2sc4402.pdf Size:120K _sanyo

Ordering number:EN2755
NPN Epitaxial Planar Silicon Transistor
2SC4402
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=12dB typ (VCE=3V, IC=10mA)
: NF=1.5dB typ (VC

4.10. 2sc4409.pdf Size:1046K _kexin

SMD Type Transistors
NPN Transistors
2SC4409
1.70 0.1
■ Features
● Low collector saturation voltage
● High speed switching time
● Small flat package
0.42 0.1
0.46 0.1
● PC = 1~2 W (Mounted on a ceramic substrate)
● Complementary to 2SA1681
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage

AO4466 Datasheet (PDF)

1.1. ao4466l.pdf Size:199K _update-mosfet

AO4466
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4466/L uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This
ID = 9.4A (VGS = 10V)
device is suitable for use as a load switch or in PWM
RDS(ON) 1.2. ao4466.pdf Size:324K _aosemi

AO4466
30V N-Channel MOSFET
General Description Product Summary
The AO4466 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)
device is suitable for use as a load switch or in PWM
RDS(ON)

 1.3. ao4466l.pdf Size:199K _aosemi

AO4466
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4466/L uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This
ID = 9.4A (VGS = 10V)
device is suitable for use as a load switch or in PWM
RDS(ON) 1.4. ao4466.pdf Size:1389K _kexin

SMD Type MOSFET
N-Channel MOSFET
AO4466 (KO4466)
SOP-8
■ Features
● VDS (V) = 30V
● ID = 9.4 A (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 23mΩ (VGS = 10V)
● RDS(ON) ＜ 35mΩ (VGS = 4.5V)
1 Source 5 Drain
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30
V
Gate

AON4407 Datasheet (PDF)

1.1. aon4407.pdf Size:481K _aosemi

AON4407
12V P-Channel MOSFET
General Description Features
The AON4407 uses advanced trench technology to VDS (V) = -12V
provide excellent RDS(ON), low gate charge and operation
ID = -9 A (VGS = -4.5V)
with gate voltages as low as 1.8V. This device is suitable
RDS(ON) 5.1. aon4421.pdf Size:299K _aosemi

AON4421
P-Channel Enhancement Mode
Field Effect Transistor
General Description Product Summary
VDS -30V
The AON4421 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
ID (at VGS=-10V) -8A
device is suitable for use as a load switch.
RDS(ON) (at VGS=-10V) 5.2. aon4420.pdf Size:148K _aosemi

AON4420L
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
VDS (V) = 30V
RDS(ON) per unit area. This device is ideal for load switch
ID = 10A (VGS = 10V)
and high speed switching applications.
RDS(ON)

 5.3. aon4420l.pdf Size:147K _aosemi

AON4420L
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
VDS (V) = 30V
RDS(ON) per unit area. This device is ideal for load switch
ID = 10A (VGS = 10V)
and high speed switching applications.
RDS(ON) 5.4. aon4413.pdf Size:137K _aosemi

AON4413
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AON4413 uses advanced trench technology to VDS (V) = -30V
provide excellent RDS(ON) with low gate charge. This
ID = -6.5A (VGS = -10V)
device is suitable for use as a load switch or in PWM
RDS(ON)