Биполярный транзистор 2SC5551 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5551

Маркировка: EB

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1.3
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 2
V

Макcимальный постоянный ток коллектора (Ic): 0.3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 3500
MHz

Ёмкость коллекторного перехода (Cc): 2.9
pf

Статический коэффициент передачи тока (hfe): 90

Корпус транзистора: PCP

2SC5551
Datasheet (PDF)

1.1. 2sc5551af-td-e.pdf Size:185K _update

Ordering number : ENA1118A
2SC5551A
RF Transistor
http://onsemi.com
30V, 300mA, fT=3.5GHz, NPN Single PCP
Features
• High fT : (fT=3.5GHz typ)
• Large current : (IC=300mA)
• Large allowable collector dissipation (1.3W max)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 40 V
Collector-to-Emitter Volta

1.2. 2sc5551ae-td-e.pdf Size:185K _update

Ordering number : ENA1118A
2SC5551A
RF Transistor
http://onsemi.com
30V, 300mA, fT=3.5GHz, NPN Single PCP
Features
• High fT : (fT=3.5GHz typ)
• Large current : (IC=300mA)
• Large allowable collector dissipation (1.3W max)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 40 V
Collector-to-Emitter Volta

 1.3. 2sc5551.pdf Size:43K _sanyo

Ordering number:ENN6328
NPN Epitaxial Planar Silicon Transistor
2SC5551
High-Frequency Medium-Output
Amplifier Applications
Features Package Dimensions
High fT : (fT=3.5GHz typ).
unit:mm
Large current : (IC=300mA).
2038A
Large allowable collector dissipation (1.3W max).

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Base
0.75
2 : Collector
3 : Emitter
SANYO :

1.4. 2sc5551a.pdf Size:287K _sanyo

Ordering number : ENA1118 2SC5551A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
2SC5551A
Amplifier Applications
Features
High fT : (fT=3.5GHz typ).
Large current : (IC=300mA).
Large allowable collector dissipation (1.3W max).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collec

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Биполярный транзистор CXT5551 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: CXT5551

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1.2
W

Макcимально допустимое напряжение коллектор-база (Ucb): 180
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.05
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 6
pf

Статический коэффициент передачи тока (hfe): 80

Корпус транзистора: SOT-89

CXT5551
Datasheet (PDF)

1.1. cxt5551e.pdf Size:290K _central

CXT5551E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CXT5551E is an
NPN Silicon Transistor, packaged in an SOT-89 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
• High Collector Breakdown Voltage: 250V
SOT-89 CASE
• Low

1.2. cxt5551hc.pdf Size:283K _central

CXT5551HC
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CXT5551HC type
is an high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RAT

 1.3. cxt5551.pdf Size:731K _htsemi

CXT5551
TRANSISTOR (NPN)
SOT-89
FEATURES
Switching and amplification in high voltage
1
Applications such as telephony
1. BASE
Low current(max. 600mA)
2. COLLECTOR
High voltage(max.180v)
3. EMITTER
Marking: 1G6
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEB

1.4. cxt5551.pdf Size:248K _lge

CXT5551
SOT-89 Transistor(NPN)
1. BASE
2. COLLECTOR
1
3. EMITTER
SOT-89
4.6
B
4.4
1.6
1.8
1.4
1.4
Features
2.6
4.25
Switching and amplification in high voltage
2.4
3.75
Applications such as telephony
0.8
MIN
Low current(max. 600mA)
0.53
0.40
0.48
0.44
2x)
0.13 B
0.35
High voltage(max.180v) 0.37

1.5
3.0
Marking: 1G6 Dimensions in inches and (millim

 1.5. cxt5551.pdf Size:1000K _kexin

SMD Type Transistors
NPN Transistors
CXT5551 (KXT5551)
Features 1.70 0.1
High current (max. 600mA).
Low voltage (max. 160 V).
● Comlementary to CXT5401
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 180
Collector — Emitter Voltage VCEO 160 V
Emitter — Base Voltage VEBO 6
Collector

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

2SC5552 Datasheet (PDF)

1.1. 2sc5552.pdf Size:46K _panasonic

Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
15.50.5 3.00.3
? 3.20.1
5
5
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
5
5
High-speed switching
(4.0)
5
2.00.2
Wide area of safe operation (ASO)
1.10.1
0.70.1
Absolute Maximum Ratings TC = 25C
5.

1.2. 2sc5552.pdf Size:187K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5552
DESCRIPTION
·High Breakdown Voltage
·High Switching Speed
·Low Saturation Voltage
·Wide area of safe operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)

 4.1. 2sc5551af-td-e.pdf Size:185K _update

Ordering number : ENA1118A
2SC5551A
RF Transistor
http://onsemi.com
30V, 300mA, fT=3.5GHz, NPN Single PCP
Features
• High fT : (fT=3.5GHz typ)
• Large current : (IC=300mA)
• Large allowable collector dissipation (1.3W max)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 40 V
Collector-to-Emitter Volta

4.2. 2sc5551ae-td-e.pdf Size:185K _update

Ordering number : ENA1118A
2SC5551A
RF Transistor
http://onsemi.com
30V, 300mA, fT=3.5GHz, NPN Single PCP
Features
• High fT : (fT=3.5GHz typ)
• Large current : (IC=300mA)
• Large allowable collector dissipation (1.3W max)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 40 V
Collector-to-Emitter Volta

 4.3. 2sc5550.pdf Size:208K _toshiba



4.4. 2sc5551.pdf Size:43K _sanyo

Ordering number:ENN6328
NPN Epitaxial Planar Silicon Transistor
2SC5551
High-Frequency Medium-Output
Amplifier Applications
Features Package Dimensions
High fT : (fT=3.5GHz typ).
unit:mm
Large current : (IC=300mA).
2038A
Large allowable collector dissipation (1.3W max).

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Base
0.75
2 : Collector
3 : Emitter
SANYO :

 4.5. 2sc5551a.pdf Size:287K _sanyo

Ordering number : ENA1118 2SC5551A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
2SC5551A
Amplifier Applications
Features
High fT : (fT=3.5GHz typ).
Large current : (IC=300mA).
Large allowable collector dissipation (1.3W max).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collec

4.6. 2sc5553.pdf Size:55K _panasonic

Power Transistors
2SC5553
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
15.50.5 3.00.3
? 3.20.1
5
5
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
5
5
High-speed switching
(4.0)
5
2.00.2
Wide area of safe operation (ASO)
1.10.1
0.70.1
Absolute Maximum Ratings TC = 25C
5.

4.7. 2sc5556.pdf Size:65K _panasonic

Transistors
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
0.40+0.10
0.05
0.16+0.10
0.06
Features
3
Low noise figure NF
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
packing (0.95) (0.95)
1.90.1
2.90+0.20
0.05
Absolu

4.8. 2sc5554.pdf Size:49K _hitachi

2SC5554
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-692 (Z)
1st. Edition
Oct. 1998
Features
Super compact package;
(1.4 ? 0.8 ? 0.59mm)
Capable low voltage operation ;
(VCE = 1V)
Outline
MFPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is YH-.
2SC5554
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO

4.9. 2sc5555.pdf Size:46K _hitachi

2SC5555
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-693 (Z)
1st. Edition
Nov. 1998
Features
Super compact package;
(1.4 ? 0.8 ? 0.59mm)
Capable low voltage operation ;
(VCE = 1V)
Outline
MFPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is ZD-.
2SC5555
Absolute Maximum Ratings (Ta = 25 C)
Item Symbol Ratings Unit
Collector to base voltage VCBO

Биполярный транзистор CZT5551 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: CZT5551

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 2
W

Макcимально допустимое напряжение коллектор-база (Ucb): 180
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.05
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 6
pf

Статический коэффициент передачи тока (hfe): 80

Корпус транзистора: SOT223

CZT5551
Datasheet (PDF)

1.1. czt5551.pdf Size:527K _central

CZT5551
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT5551 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE
MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS
Collect

1.2. czt5551hc.pdf Size:527K _central

CZT5551HC
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT5551HC type
is a high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE

 1.3. czt5551e.pdf Size:534K _central

CZT5551E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT5551E is an
NPN Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
SOT-223 CASE
SOT-223 CASE • High Collector Breakdown Voltage

1.4. czt5551.pdf Size:669K _secos

CZT5551
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5551 is designed for general
purpose applications requiring high
breakdown voltages.
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 TYP.
C 2.90 3.10 J 2.30 REF.
5 5 5 1
D 0.02 0.10 1 6.30 6.70
Date Code
E 0 10 2 6.30 6.70
I 0.60 0.80 3 3.30 3

 1.5. czt5551.pdf Size:924K _kexin

SMD Type Transistors
NPN Transistors
CZT5551 (KZT5551)
Unit:mm
SOT-223
6.50±0.2
3.00±0.1
4
■ Features
● High Voltage
● High Voltage Amplifier Application
1 2 3
0.250
2.30 (typ)
Gauge Plane
1.Base
2.Collector
0.70±0.1
3.Emitter
4.60 (typ)
4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 180
Colle

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Биполярный транзистор 2N5551CN — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N5551CN

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.4
W

Макcимально допустимое напряжение коллектор-база (Ucb): 180
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Ёмкость коллекторного перехода (Cc): 3
pf

Статический коэффициент передачи тока (hfe): 80

Корпус транзистора: TO-92N

2N5551CN
Datasheet (PDF)

1.1. 2n5551cn.pdf Size:249K _upd

2N5551CN
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO. Marking Package Code
2N5551CN 2N5551C TO-92N
Outline Dimensions unit : mm
4.20

1.2. 2n5551cn.pdf Size:249K _auk

2N5551CN
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO. Marking Package Code
2N5551CN 2N5551C TO-92N
Outline Dimensions unit : mm
4.20

 3.1. 2n5551csm.pdf Size:31K _upd

2N5551CSM
HIGH VOLTAGE NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
MECHANICAL DATA
CERAMIC SURFACE MOUNT PACKAGE
Dimensions in mm (inches)
FOR HIGH RELIABILITY APPLICATIONS
0.51 ± 0.10
(0.02 ± 0.004) 0.31 FEATURES
rad.
(0.012)
• SILICON PLANAR EPITAXIAL NPN
3
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
21
• CECC SCREENING OPTIONS
1.9

3.2. 2n5551c.pdf Size:32K _kec

SEMICONDUCTOR 2N5551C
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
B C
FEATURES
High Collector Breakdwon Voltage
N DIM MILLIMETERS
: VCBO=180V, VCEO=160V
A 4.70 MAX
E
K
Low Leakage Current. B 4.80 MAX
G
C 3.70 MAX
D
: ICBO=50nA(Max.), VCB=120V
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=0.2V(Max.),

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

KST5551 Datasheet (PDF)

1.1. kst5551.pdf Size:44K _fairchild_semi

KST5551
Amplifier Transistor
Collector-Emitter Voltage: VCEO=160V
3
Collector Power Dissipation: PC (max)=350mW
2
SOT-23
1
Mark: G1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage

4.1. kst5550.pdf Size:56K _fairchild_semi

KST5550
High Voltage Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 140 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperatu

 5.1. kst55 kst56.pdf Size:44K _fairchild_semi

KST55/56
Driver Transistor
Collector-Emitter Voltage: VCEO = KST55: — 60V
3
KST56: — 80V
Collector Power Dissipation: PC (max) = 350mW
Complement to KST05/06
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector Base Voltage
: KST55 -60 V
: KST56 -80 V

5.2. kst55.pdf Size:21K _samsung

KST55/56 PNP EPITAXIAL SILICON TRANSISTOR
DRIVER TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector Base Voltage VCBO
:KST55 -60 V
:KST56 -80 V
Collector-Emitter Voltage VCEO
:KST55 -60 V
:KST56 -80 V
Emitter-Base Voltage VEBO -4 V
Collector Current IC -500 mA
Collector Dissipation PC 350 mW
Storage Temperature TSTG 150
Thermal R

Биполярный транзистор 2N5551C — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N5551C

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 180
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 6
pf

Статический коэффициент передачи тока (hfe): 80

Корпус транзистора: TO92

2N5551C
Datasheet (PDF)

1.1. 2n5551csm.pdf Size:31K _upd

2N5551CSM
HIGH VOLTAGE NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
MECHANICAL DATA
CERAMIC SURFACE MOUNT PACKAGE
Dimensions in mm (inches)
FOR HIGH RELIABILITY APPLICATIONS
0.51 ± 0.10
(0.02 ± 0.004) 0.31 FEATURES
rad.
(0.012)
• SILICON PLANAR EPITAXIAL NPN
3
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
21
• CECC SCREENING OPTIONS
1.9

1.2. 2n5551cn.pdf Size:249K _upd

2N5551CN
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO. Marking Package Code
2N5551CN 2N5551C TO-92N
Outline Dimensions unit : mm
4.20

 1.3. 2n5551cn.pdf Size:249K _auk

2N5551CN
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO. Marking Package Code
2N5551CN 2N5551C TO-92N
Outline Dimensions unit : mm
4.20

1.4. 2n5551c.pdf Size:32K _kec

SEMICONDUCTOR 2N5551C
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
B C
FEATURES
High Collector Breakdwon Voltage
N DIM MILLIMETERS
: VCBO=180V, VCEO=160V
A 4.70 MAX
E
K
Low Leakage Current. B 4.80 MAX
G
C 3.70 MAX
D
: ICBO=50nA(Max.), VCB=120V
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=0.2V(Max.),

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Где и как мы можем использовать ?

Максимальная нагрузка, которую может выдерживать этот транзистор, составляет около 150 мА, что достаточно для работы многих устройств в цепи, например реле, светодиодов и других элементов схемы. Напряжение насыщения U_кэ.нас. составляет всего 0.3 В, что также удовлетворяет почти все потребности. Как обсуждалось выше, C945 имеет хороший коэффициент усиления постоянного тока h_FE и низкий уровень шума, благодаря чему он идеально подходит для использования в каскадах схем предусилителя, усилителя звука или для усиления других сигналов в электронных цепях. Напряжение насыщения большинства биполярных транзисторов составляет 0,6 В, но у нашего С945 U_кэ.нас. = 0,3 В, поэтому он может работать в цепях низкого напряжения.

CZT5551 Datasheet (PDF)

1.1. czt5551.pdf Size:527K _central

CZT5551
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT5551 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE
MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS
Collect

1.2. czt5551hc.pdf Size:527K _central

CZT5551HC
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT5551HC type
is a high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE

 1.3. czt5551e.pdf Size:534K _central

CZT5551E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT5551E is an
NPN Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
SOT-223 CASE
SOT-223 CASE • High Collector Breakdown Voltage

1.4. czt5551.pdf Size:669K _secos

CZT5551
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5551 is designed for general
purpose applications requiring high
breakdown voltages.
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 TYP.
C 2.90 3.10 J 2.30 REF.
5 5 5 1
D 0.02 0.10 1 6.30 6.70
Date Code
E 0 10 2 6.30 6.70
I 0.60 0.80 3 3.30 3

 1.5. czt5551.pdf Size:924K _kexin

SMD Type Transistors
NPN Transistors
CZT5551 (KZT5551)
Unit:mm
SOT-223
6.50±0.2
3.00±0.1
4
■ Features
● High Voltage
● High Voltage Amplifier Application
1 2 3
0.250
2.30 (typ)
Gauge Plane
1.Base
2.Collector
0.70±0.1
3.Emitter
4.60 (typ)
4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 180
Colle

CXT5551 Datasheet (PDF)

1.1. cxt5551e.pdf Size:290K _central

CXT5551E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CXT5551E is an
NPN Silicon Transistor, packaged in an SOT-89 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
• High Collector Breakdown Voltage: 250V
SOT-89 CASE
• Low

1.2. cxt5551hc.pdf Size:283K _central

CXT5551HC
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CXT5551HC type
is an high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RAT

 1.3. cxt5551.pdf Size:731K _htsemi

CXT5551
TRANSISTOR (NPN)
SOT-89
FEATURES
Switching and amplification in high voltage
1
Applications such as telephony
1. BASE
Low current(max. 600mA)
2. COLLECTOR
High voltage(max.180v)
3. EMITTER
Marking: 1G6
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEB

1.4. cxt5551.pdf Size:248K _lge

CXT5551
SOT-89 Transistor(NPN)
1. BASE
2. COLLECTOR
1
3. EMITTER
SOT-89
4.6
B
4.4
1.6
1.8
1.4
1.4
Features
2.6
4.25
Switching and amplification in high voltage
2.4
3.75
Applications such as telephony
0.8
MIN
Low current(max. 600mA)
0.53
0.40
0.48
0.44
2x)
0.13 B
0.35
High voltage(max.180v) 0.37

1.5
3.0
Marking: 1G6 Dimensions in inches and (millim

 1.5. cxt5551.pdf Size:1000K _kexin

SMD Type Transistors
NPN Transistors
CXT5551 (KXT5551)
Features 1.70 0.1
High current (max. 600mA).
Low voltage (max. 160 V).
● Comlementary to CXT5401
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 180
Collector — Emitter Voltage VCEO 160 V
Emitter — Base Voltage VEBO 6
Collector

PZT5551L3 Datasheet (PDF)

1.1. pzt5551l3.pdf Size:222K _cystek

Spec. No. : C208L3
Issued Date : 2004.09.21
CYStech Electronics Corp.
Revised Date : 2008.07.04
Page No. : 1/5
General Purpose NPN Epitaxial Planar Transistor
PZT5551L3
Description
The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BV =160V @ I =1mA)
CEO C
• Complement to BT

3.1. pzt5551.pdf Size:193K _utc

UNISONIC TECHNOLOGIES CO., LTD
PZT5551 NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
VCEO=160V
* High current gain
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reel
www.unisonic.com.tw 1of 4
Copyright 2012

3.2. pzt5551.pdf Size:333K _wietron

PZT5551
NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4
4
1. BASE
2.COLLECTOR
3.EMITTER
BASE
4.COLLECTOR 1
1 2
3
3
SOT-223
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25?C)
Symbol
Rating Value Unit
V
Collector-Emitter Voltage CEO V
160
VCBO
Collector-Base Voltage 180 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current (DC) 600 mA
PD
Total Device Disspation 1.5 W
Junc

2N5551C Datasheet (PDF)

1.1. 2n5551csm.pdf Size:31K _upd

2N5551CSM
HIGH VOLTAGE NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
MECHANICAL DATA
CERAMIC SURFACE MOUNT PACKAGE
Dimensions in mm (inches)
FOR HIGH RELIABILITY APPLICATIONS
0.51 ± 0.10
(0.02 ± 0.004) 0.31 FEATURES
rad.
(0.012)
• SILICON PLANAR EPITAXIAL NPN
3
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
21
• CECC SCREENING OPTIONS
1.9

1.2. 2n5551cn.pdf Size:249K _upd

2N5551CN
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO. Marking Package Code
2N5551CN 2N5551C TO-92N
Outline Dimensions unit : mm
4.20

 1.3. 2n5551cn.pdf Size:249K _auk

2N5551CN
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type NO. Marking Package Code
2N5551CN 2N5551C TO-92N
Outline Dimensions unit : mm
4.20

1.4. 2n5551c.pdf Size:32K _kec

SEMICONDUCTOR 2N5551C
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
B C
FEATURES
High Collector Breakdwon Voltage
N DIM MILLIMETERS
: VCBO=180V, VCEO=160V
A 4.70 MAX
E
K
Low Leakage Current. B 4.80 MAX
G
C 3.70 MAX
D
: ICBO=50nA(Max.), VCB=120V
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=0.2V(Max.),

Биполярный транзистор PZT5551L3 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: PZT5551L3

Маркировка: G1

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 180
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 6
pf

Статический коэффициент передачи тока (hfe): 120

Корпус транзистора: SOT-223

PZT5551L3
Datasheet (PDF)

1.1. pzt5551l3.pdf Size:222K _cystek

Spec. No. : C208L3
Issued Date : 2004.09.21
CYStech Electronics Corp.
Revised Date : 2008.07.04
Page No. : 1/5
General Purpose NPN Epitaxial Planar Transistor
PZT5551L3
Description
The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BV =160V @ I =1mA)
CEO C
• Complement to BT

3.1. pzt5551.pdf Size:193K _utc

UNISONIC TECHNOLOGIES CO., LTD
PZT5551 NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
VCEO=160V
* High current gain
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reel
www.unisonic.com.tw 1of 4
Copyright 2012

3.2. pzt5551.pdf Size:333K _wietron

PZT5551
NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4
4
1. BASE
2.COLLECTOR
3.EMITTER
BASE
4.COLLECTOR 1
1 2
3
3
SOT-223
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25?C)
Symbol
Rating Value Unit
V
Collector-Emitter Voltage CEO V
160
VCBO
Collector-Base Voltage 180 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current (DC) 600 mA
PD
Total Device Disspation 1.5 W
Junc

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.