Характеристики транзистора j3y в smd-корпусе

BC639-16 Datasheet (PDF)

5.1. bc63916.pdf Size:55K _upd

BC63916
Switching and Amplifier Applications
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Voltage at RBE=1KΩ 100 V
VCES Collector-Emitter Voltage 100 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1 A
P

5.2. bc637g bc639zl1g.pdf Size:96K _upd

BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
• These are Pb-Free Devices* http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
3
Rating Symbol Value Unit
BASE
Collector — Emitter Voltage VCEO Vdc
BC637 60
1
BC639 80
EMITTER
Collector — Base Voltage VCBO Vdc
BC637 60
BC639 80
Emitter — Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 1.0 Adc
TO-

 5.3. bc639rl1g bc639g.pdf Size:96K _upd

BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
• These are Pb-Free Devices* http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
3
Rating Symbol Value Unit
BASE
Collector — Emitter Voltage VCEO Vdc
BC637 60
1
BC639 80
EMITTER
Collector — Base Voltage VCBO Vdc
BC637 60
BC639 80
Emitter — Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 1.0 Adc
TO-

5.4. bc635 bc637 bc639.pdf Size:116K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC635/D
High Current Transistors
BC635
NPN Silicon
BC637
BC639
COLLECTOR
2
3
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
3
BC BC BC
635 637 639
Rating Symbol Unit
CASE 2904, STYLE 14
TO92 (TO226AA)
CollectorEmitter Voltage VCEO 45 60 80 Vdc
CollectorBase Voltage VCBO 45 60 80 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
C

 5.5. bc635 bc637 bc639.pdf Size:47K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639
NPN medium power transistors
Product specification 2001 Oct 10
Supersedes data of 1999 Apr 23
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
FEATURES PINNING
High current (max. 1 A)
PIN DESCRIPTION
Low voltage (max. 80 V).
1 base
2 collector
APPLICATIONS

5.6. bc635 bc637 bc639 3.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639
NPN medium power transistors
1999 Apr 23
Product specification
Supersedes data of 1997 Mar 12
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
FEATURES PINNING
High current (max. 1 A)
PIN DESCRIPTION
Low voltage (max. 80 V).
1 base
2 collector
APPLICATIONS

5.7. bc639 bcp56 bcx56.pdf Size:153K _philips

BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
Rev. 08 22 June 2007 Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1. Product overview
Type number Package PNP complement
NXP JEITA JEDEC
BC639 SOT54 SC-43A TO-92 BC640
BCP56 SOT223 SC-73 — BCP53
BCX56 SOT89 SC-62 TO-243 BCX53
Valid for all available selectio

5.8. bc63916.pdf Size:56K _fairchild_semi

BC63916
Switching and Amplifier Applications
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Voltage at RBE=1K? 100 V
VCES Collector-Emitter Voltage 100 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1 A
PC Coll

5.9. bc635 bc637 bc639.pdf Size:55K _fairchild_semi

BC635/637/639
Switching and Amplifier Applications
Complement to BC636/638/640
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Voltage at RBE=1K?
: BC635 45 V
: BC637 60 V
: BC639 100 V
VCES Collector-Emitter Voltage
: BC635 45 V
: BC637 60 V
: B

5.10. bc637 bc639 bc63916.pdf Size:92K _onsemi

BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
These are Pb-Free Devices* http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
3
Rating Symbol Value Unit
BASE
Collector — Emitter Voltage VCEO Vdc
BC637 60
1
BC639 80
EMITTER
Collector — Base Voltage VCBO Vdc
BC637 60
BC639 80
Emitter — Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 1.0 Adc
TO-92
T

5.11. bc635 bc636 bc637 bc638 bc639 bc640.pdf Size:115K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with «T»
B
C
E
High Current Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
BC635 BC637 BC639
DESCRIPTION SYMBOL
BC636 BC638 BC640 UNIT
VCE

Технические характеристики транзистора MJE13009

При температуре окружающей среды +25 °C, если не указано иного, имеет такие параметры:

физические:

  • биполярный транзистор;
  • корпус ТО-220, ТО-3PN;
  • материал корпуса  – пластик;
  • кристалл — кремний (Si);

электрические (допустимые):

  • проводимость – NPN;
  • UКЭ макс (VCEmax) до 400 В (V);
  • UКЭВ (VCEV) 700 В (V), при UБЭ(VBE) = -1.5 В (V);
  • UЭБ макс (VЕВ max) до 9 В (V);
  • IK(IC) 12 А, IK макс (ICmax) до 24 А;
  • IБ. (IB) 6А, импульсный пиковый IБ пик. (IBmax) до 12 А, при tp≤10 мc (ms);
  • IЭ (IE) 18А, импульсный пиковый  IЭ пик. (IEmax) до 36 А, при tp≤10 мc (ms);
  • P (Ptod)= 100 Вт (W), при Tc ≤ 25°C и использовании радиатора;
  • FГр мин.(ftMIN) 4 МГц (MHz), при U КЭ  (VCE ) =10 В (V), IK (Ic )= 0,5 А;
  • UКЭ.раб.(VCEOsus) 400 В (V), при IC (IК) = 10 мA(mA), IБ (IB)=  0;
  • IКЭВ (ICEV) 1 мА (mA) при UКЭВ(VCEV) = 700 В (V), до 5 мА (mA) при повышении Tраб (Tamb) до 150 °C;
  • IЭБО (I EBO) ≤1 мА (mA), при U EБ (VEB ) = 9 В (V) и IК (IС)=0);
  • выходная емкость C22б (Cob) = 180 пФ (pF);

напряжение насыщения между коллектором и эмиттером UКЭ нас. (VBEsat):

напряжение насыщения между базой и эммитером UБЭ нас. (VBE sat):

коммутационные характеристики (при UКЭ =120 В, IK =8 A, IБ вкл=1.6А, IБ выкл.= -1.6А):

  • время задержки tзад (td) = 0.1 мкс (µs);
  • время включения tвкл (ton) = 1.1 мкс (µs);
  • время спада tсп (tf)  = 0.7 мкс (µs);
  • время рассасывания tРАС (ts) = 3 мкс (µs);

тепловые:

  • Тепловое сопротивление перехода кристалла к корпусу RθJC = 1.26 °C/W (°C/Вт);
  • Тепловое сопротивление корпуса к окружающей среде RθCA= 62.5 °C/W (°C/Вт);
  • Общее тепловое сопротивление RθJA= 100 °C/W (°C/Вт);
  • Tперехода(Tj) ≤ + 150 °C;
  • Tхран.(Tstr) от — 65 до + 150 °C;
  • Tраб.(Tamb) от — 65 до + 150 °C;
  • Tпайки (TL) до 275 °C.

коэффициент усиления по току у транзистора 13009  находится в пределах от 8 до 40 Hfe.

Параметры 13009 у различных производителей незначительно отличаются.

KST8050S Datasheet (PDF)

1.1. kst8050s.pdf Size:970K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST8050S
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
Features
Collector Current: IC=0.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5

3.1. kst8050d-50.pdf Size:1155K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST8050D-50
SOT-23
Unit: mm
+0.1
2.9 -0.1
0.4+0.1
-0.1
3
Features
● Collector Current Capability IC=1.2A
● Collector Emitter Voltage VCEO=50V
1 2
+0.1
+0.05
0.95 -0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 50 V
Collec

3.2. kst8050x.pdf Size:594K _kexin

SMD Type Transistors
NPN Transistors
KST8050X
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitte

 3.3. kst8050.pdf Size:1008K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST8050
SOT-23
Unit: mm
+0.1
2.9 -0.1
0.4+0.1
-0.1
3
Features
Collector Current: IC=1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V

3.4. kst8050m.pdf Size:810K _kexin

SMD Type
SMD Type Transistors
NPN Transistors
KST8050M
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current: IC=0.8A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Bas

Маркировка полевых SMD транзисторов

МаркировкаТип прибораМаркировкаТип прибора
    
6AMMBF4416C92SST4392
6BMMBF5484C93SST4393
6CMMBFU310H16SST4416
6DMMBF5457I08SST108
6EMMBF5460I09SST109
6FMMBF4860I10SST110
6GMMBF4393M4BSR56
6HMMBF5486M5BSR57
6JMMBF4391M6BSR58
6KMMBF4932P01SST201
6LMMBF5459P02SST202
6TMMBFJ310P03SST203
6WMMBFJ175P04SST204
6YMMBFJ177S14SST5114
B08SST6908 S15 SST5115
B09SST6909 S16SST5116
B10SST6910 S70SST270
C11SST111 S71SST271
C12SST112 S74 SST174
C13SST113 S75SST175
C41SST4091 S76SST176
C42SST4092 S77SST177
C43SST4093 TVMMBF112
C59SST4859 Z08SST308
C60SST4860 Z09SST309
C61SST4861 Z10SST310
C91SST4391  

BSX45-16 Datasheet (PDF)

5.1. bsx45 bsx46 bsx47.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSX45; BSX46; BSX47
NPN medium power transistors
1997 Apr 23
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN medium power transistors BSX45; BSX46; BSX47
FEATURES PINNING
High current (max. 1 A)
PIN DESCRIPTION
Low voltage (max. 80 V).
1 em

5.2. bsx45 bsx46 bsx47.pdf Size:89K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS BSX45
BSX46
BSX47
TO-39
Metal Can Package
AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL BSX45 BSX46 BSX47 UNITS
VCEO
Collector Emitter Voltage 40 60 80 V
VCES
Collector Emitter Voltage 80 100 120 V
VEBO

Биполярный транзистор BCP53-16T1G — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BCP53-16T1G

Маркировка: AH-16

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 1.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 1.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT223

BCP53-16T1G
Datasheet (PDF)

1.1. bcp53-16t1g bcp53-16t3g.pdf Size:618K _upd

BCP53 Series,
SBCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
http://onsemi.com
which is designed for medium power surface mount applications.
MEDIUM POWER HIGH
• High Current: 1.5 A
CURRENT SURFACE MOUNT
• NPN Complement is BCP56
PNP TRANSISTOR

1.2. sbcp53-10t1g sbcp53-16t1g.pdf Size:618K _update

BCP53 Series,
SBCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
http://onsemi.com
which is designed for medium power surface mount applications.
MEDIUM POWER HIGH
• High Current: 1.5 A
CURRENT SURFACE MOUNT
• NPN Complement is BCP56
PNP TRANSISTOR

 1.3. nsvbcp53-16t3g.pdf Size:69K _onsemi

BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
http://onsemi.com
• High Current
• NPN Complement is BCP56
MEDIUM POWER HIGH
• The SOT-223 Package can be soldered using wave or reflow

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

Биполярный транзистор BSX45-16 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BSX45-16

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.8
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V

Макcимальный постоянный ток коллектора (Ic): 1
A

Предельная температура PN-перехода (Tj): 200
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Ёмкость коллекторного перехода (Cc): 25
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO39

BSX45-16
Datasheet (PDF)

5.1. bsx45 bsx46 bsx47.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSX45; BSX46; BSX47
NPN medium power transistors
1997 Apr 23
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN medium power transistors BSX45; BSX46; BSX47
FEATURES PINNING
High current (max. 1 A)
PIN DESCRIPTION
Low voltage (max. 80 V).
1 em

5.2. bsx45 bsx46 bsx47.pdf Size:89K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS BSX45
BSX46
BSX47
TO-39
Metal Can Package
AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL BSX45 BSX46 BSX47 UNITS
VCEO
Collector Emitter Voltage 40 60 80 V
VCES
Collector Emitter Voltage 80 100 120 V
VEBO

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

Биполярный транзистор BCP56-16T1G — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BCP56-16T1G

Маркировка: BH-16

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 130
MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT223

BCP56-16T1G
Datasheet (PDF)

1.1. bcp56-16t3g bcp56-16t1g.pdf Size:151K _upd

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

1.2. sbcp56-16t1g.pdf Size:151K _update

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

 1.3. sbcp56-16t3g.pdf Size:151K _update

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

J108 Datasheet (PDF)

1.1. mmbfj108.pdf Size:128K _update_mosfet

J108/J109/J110/MMBFJ108
N-Channel Switch
3
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
2
• Sourced from Process 58.
TO-92
1 SuperSOT-3
1
Marking: I8
1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 25

1.2. j108 j109 j110 1.pdf Size:45K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification 1996 Jul 30
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
FEATURES PINNING — TO-92
High speed switching
PIN SYMBOL DESCRIPTION
Interchangeability of drain and

 1.3. j108-j109-j110.pdf Size:34K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification 1996 Jul 30
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
FEATURES PINNING — TO-92
High speed switching
PIN SYMBOL DESCRIPTION
Interchangeability of drain and

1.4. 2sj108.pdf Size:339K _toshiba

2SJ108
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ amplifiers and MC head
amplifiers.
• High |Y |: |Y | = 22 mS (typ.)
fs fs
(V = -10 V, V = 0, I = -3 mA)
DS GS DSS
• Low noise: En = 0.95 nV/Hz1/2 (typ.)
(V = -10 V, I = -1 mA, f = 1 kHz)
DS D
• High i

 1.5. ssm3j108tu.pdf Size:147K _toshiba

SSM3J108TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J108TU
High Speed Switching Applications
• 1.8V drive
Unit: mm
• Low on-resistance: Ron = 363m? (max) (@VGS = -1.8 V)
Ron = 230m? (max) (@VGS = -2.5 V) 2.1±0.1
Ron = 158m? (max) (@VGS = -4.0 V)
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
1
Characteristic Symbol Rating Unit
3
2
Drain-Source v

1.6. j108 j109 j110 mmbfj108.pdf Size:129K _fairchild_semi

J108/J109/J110/MMBFJ108
N-Channel Switch
3
This device is designed for digital switching
applications where very low on resistance is
mandatory.
2
Sourced from Process 58.
TO-92
1 SuperSOT-3
1
Marking: I8
1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 25 V
VGS

1.7. j108 j109 j110 sst108 sst109 sst110.pdf Size:50K _vishay

J/SST108 Series
Vishay Siliconix
NChannel JFETs
J108 SST108
J109 SST109
J110 SST110
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)
J/SST108 3 to 10 8 20 4
J/SST109 2 to 6 12 20 4
J/SST110 0.5 to 4 18 20 4
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: J108

MTB20N03Q8 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: MTB20N03Q8

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 3.1
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 10.2
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 12
ns

Выходная емкость (Cd): 76
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0136
Ohm

Тип корпуса: SOP-8

MTB20N03Q8
Datasheet (PDF)

1.1. mtb20n03q8.pdf Size:331K _cystek

Spec. No. : C396Q8
Issued Date : 2009.04.29
CYStech Electronics Corp.
Revised Date : 2014.02.14
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
BVDSS 30V
MTB20N03Q8
ID 10.2A
RDS(ON)@VGS=10V, ID=9A 13.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=7A 22.3 mΩ(typ)
Description
The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
c

2.1. mtb20n03aq8.pdf Size:367K _cystek

Spec. No. : C737Q8
Issued Date : 2009.04.29
CYStech Electronics Corp.
Revised Date : 2012.03.01
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
BVDSS 30V
MTB20N03AQ8
ID 10.2A
RDS(ON)@VGS=10V, ID=9A 13.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=7A 23.6 mΩ(typ)
Description
The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

 3.1. mtb20n04j3.pdf Size:366K _upd-mosfet

Spec. No. : C978J3
Issued Date : 2015.01.05
CYStech Electronics Corp.
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
BVDSS 40V
MTB20N04J3
ID@VGS=10V, TC=25°C 23A
ID@VGS=10V, TC=100°C 16.3A
VGS=10V, ID=10A 17.5mΩ
RDSON(TYP)
VGS=4.5V, ID=8A 20.8mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package

3.2. mtb20n06j3.pdf Size:312K _cystek

Spec. No. : C925J3
Issued Date : 2013.08.13
CYStech Electronics Corp.
Revised Date : 2013.12.30
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
BVDSS 60V
MTB20N06J3
ID 42A
RDS(ON)@VGS=10V, ID=20A 14.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 16.7 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

BCP53-16T1G Datasheet (PDF)

1.1. bcp53-16t1g bcp53-16t3g.pdf Size:618K _upd

BCP53 Series,
SBCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
http://onsemi.com
which is designed for medium power surface mount applications.
MEDIUM POWER HIGH
• High Current: 1.5 A
CURRENT SURFACE MOUNT
• NPN Complement is BCP56
PNP TRANSISTOR

1.2. sbcp53-10t1g sbcp53-16t1g.pdf Size:618K _update

BCP53 Series,
SBCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
http://onsemi.com
which is designed for medium power surface mount applications.
MEDIUM POWER HIGH
• High Current: 1.5 A
CURRENT SURFACE MOUNT
• NPN Complement is BCP56
PNP TRANSISTOR

 1.3. nsvbcp53-16t3g.pdf Size:69K _onsemi

BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
http://onsemi.com
• High Current
• NPN Complement is BCP56
MEDIUM POWER HIGH
• The SOT-223 Package can be soldered using wave or reflow

BCP56-16T3G Datasheet (PDF)

1.1. bcp56-16t3g bcp56-16t1g.pdf Size:151K _upd

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

1.2. sbcp56-16t1g.pdf Size:151K _update

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

 1.3. sbcp56-16t3g.pdf Size:151K _update

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

Биполярный транзистор KST8050S — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KST8050S

Маркировка: J3Y

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.3
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Статический коэффициент передачи тока (hfe): 120

Корпус транзистора: SOT23

KST8050S
Datasheet (PDF)

1.1. kst8050s.pdf Size:970K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST8050S
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
Features
Collector Current: IC=0.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5

3.1. kst8050d-50.pdf Size:1155K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST8050D-50
SOT-23
Unit: mm
+0.1
2.9 -0.1
0.4+0.1
-0.1
3
Features
● Collector Current Capability IC=1.2A
● Collector Emitter Voltage VCEO=50V
1 2
+0.1
+0.05
0.95 -0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 50 V
Collec

3.2. kst8050x.pdf Size:594K _kexin

SMD Type Transistors
NPN Transistors
KST8050X
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitte

 3.3. kst8050.pdf Size:1008K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST8050
SOT-23
Unit: mm
+0.1
2.9 -0.1
0.4+0.1
-0.1
3
Features
Collector Current: IC=1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V

3.4. kst8050m.pdf Size:810K _kexin

SMD Type
SMD Type Transistors
NPN Transistors
KST8050M
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current: IC=0.8A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Bas

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

BCP56-16T1G Datasheet (PDF)

1.1. bcp56-16t3g bcp56-16t1g.pdf Size:151K _upd

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

1.2. sbcp56-16t1g.pdf Size:151K _update

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

 1.3. sbcp56-16t3g.pdf Size:151K _update

BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223 http://onsemi.com
package, which is designed for medium power surface mount
applications.
MEDIUM POWER NPN SILICON
Features
HIGH CURRENT TRANSISTOR
• High Current: 1.0 A
SURFACE MOUNT
• The

NSVBCP56-10T3G Datasheet (PDF)

1.1. nsvbcp56-10t3g.pdf Size:69K _onsemi

BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
http://onsemi.com
applications.
Features
MEDIUM POWER NPN SILICON
• High Current: 1.0 A
HIGH CURRENT TRANSISTOR
• The SOT-223 package can be solder

3.1. nsvbcp53-16t3g.pdf Size:69K _onsemi

BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
http://onsemi.com
• High Current
• NPN Complement is BCP56
MEDIUM POWER HIGH
• The SOT-223 Package can be soldered using wave or reflow

 4.1. nsvbcp69t1g.pdf Size:122K _onsemi

BCP69T1G, NSVBCP69T1G
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT-223 package, which is designed for medium power surface
http://onsemi.com
mount applications.
Features
MEDIUM POWER
• High Current: IC = -1.0 A
PNP SILICON
• The SOT-223 Package Can Be Soldered

MTB20N03Q8 Datasheet (PDF)

1.1. mtb20n03q8.pdf Size:331K _cystek

Spec. No. : C396Q8
Issued Date : 2009.04.29
CYStech Electronics Corp.
Revised Date : 2014.02.14
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
BVDSS 30V
MTB20N03Q8
ID 10.2A
RDS(ON)@VGS=10V, ID=9A 13.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=7A 22.3 mΩ(typ)
Description
The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
c

2.1. mtb20n03aq8.pdf Size:367K _cystek

Spec. No. : C737Q8
Issued Date : 2009.04.29
CYStech Electronics Corp.
Revised Date : 2012.03.01
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
BVDSS 30V
MTB20N03AQ8
ID 10.2A
RDS(ON)@VGS=10V, ID=9A 13.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=7A 23.6 mΩ(typ)
Description
The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

 3.1. mtb20n04j3.pdf Size:366K _upd-mosfet

Spec. No. : C978J3
Issued Date : 2015.01.05
CYStech Electronics Corp.
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
BVDSS 40V
MTB20N04J3
ID@VGS=10V, TC=25°C 23A
ID@VGS=10V, TC=100°C 16.3A
VGS=10V, ID=10A 17.5mΩ
RDSON(TYP)
VGS=4.5V, ID=8A 20.8mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package

3.2. mtb20n06j3.pdf Size:312K _cystek

Spec. No. : C925J3
Issued Date : 2013.08.13
CYStech Electronics Corp.
Revised Date : 2013.12.30
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
BVDSS 60V
MTB20N06J3
ID 42A
RDS(ON)@VGS=10V, ID=20A 14.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 16.7 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic

Оцените статью:
Оставить комментарий
Adblock
detector