Транзистор 2sc5200

2SA1943 Datasheet (PDF)

1.1. 2sa1943bl.pdf Size:219K _update

RoHS
2SA1943BL Series RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-15A/-230V/150W
5.00
20.00±0.20
18.00
ø3.30±0.20
TO-3PL
FEATURES
High breakdown voltage, VCEO = -230V (min)
Complementary to 2SC5200BL
0.60
3.20
TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05
heat sink with one screw
1 2 3
APPLICATIONS
S

1.2. 2sa1943n.pdf Size:156K _update

2SA1943N
Bipolar Transistors Silicon PNP Triple-Diffused Type
2SA1943N
2SA1943N
2SA1943N
2SA1943N
1. Applications
1. Applications
1. Applications
1. Applications
• Power Amplifiers
2. Features
2. Features
2. Features
2. Features
(1) High collector voltage: VCEO = -230 V (min)
(2) Complementary to 2SC5200N
(3) Recommended for 100-W high-fidelity audio frequency amplifier outpu

 1.3. 2sa1943.pdf Size:133K _toshiba

2SA1943
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
Unit: mm
• High collector voltage: VCEO = -230 V (min)
• Complementary to 2SC5200
• Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO -230 V
Coll

1.4. 2sa1943 fjl4215.pdf Size:487K _fairchild_semi

January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
High Current Capability: IC = -17A.
High Power Dissipation : 150watts. TO-264
1
High Frequency : 30MHz.
1.Base 2.Collector 3.Emitter
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linear

 1.5. 2sa1943.pdf Size:182K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA1943 PNP SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
1
TO-3PL
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube
2SA194

1.6. 2sa1943.pdf Size:198K _jmnic

JMnic Product Specification
Silicon PNP Power Transistors 2SA1943
DESCRIPTION
·With TO-3PL package
·Complement to type 2SC5200
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3

1.7. 2sa1943.pdf Size:204K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1943
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V =- 230V(Min)
(BR)CEO
·Complement to Type 2SC5200
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency amp

2SA1941 Datasheet (PDF)

1.1. 2sa1941 3ca1941.pdf Size:272K _update

2SA1941(3CA1941) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于功率放大。
Purpose: Power amplifier applications.
特点:用于 70W 高保真音频功率输出,与 2SC5198(3DA5198)互补。
Features: Recommend for 70W high fidelity audio frequency amplifier output stage,
Complementary to 2SC5198(3DA5198).
极限参数/Absolute maximum ratings(Ta=25℃)

1.2. 2sa1941b.pdf Size:208K _update

RoHS
2SA1941B Series RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-10A/-140V/100W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
2
TO-3P(B)
3
+0.2
+0.2
0.65
1.05
-0.1
-0.1
FEATURES
High breakdown voltage, VCEO = -140V (min)
5.45±0.1 5.45±0.1
1.4
Complementary to 2SC5198B
B C E
TO-3P package which can be installed to the

 1.3. 2sa1941.pdf Size:157K _toshiba

2SA1941
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = -140 V (min)
• Complementary to 2SC5198
• Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO -140 V
Colle

1.4. 2sa1941.pdf Size:196K _jmnic

JMnic Product Specification
Silicon PNP Power Transistors 2SA1941
DESCRIPTION ·
·With TO-3P(I) package
·Complement to type 2SC5198
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3

 1.5. 2sa1941.pdf Size:221K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1941
DESCRIPTION
·Low Collector Saturation Voltage-
: V =- 2.0V(Min) @I =- 7A
CE(sat) C
·Good Linearity of h
FE
·Complement to Type 2SC5198
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio frequency
amplifier output stage app

1.6. 2sa1941.pdf Size:241K _jilin_sino

PNP 环息商小推修沉直
环息商小推修沉直
环息商小推修沉直
环息商小推修沉直
Silicon PNP Epitaxial Transistor
R
2SA1941
APPLICATIONS
用途
用途
用途
用途
Power Amplifier Applications
小 传则 如商吉
份品特性 FEATURES
份品特性
份品特性
份品特性
问热到 热到到:VCEO=-140V (min) High collector voltage:

Основные параметры биполярного низкочастотного pnp транзистора 2SA1943

Эта страница создана пользователем сайта через систему Коллективного разума и показывает существующую справочную информацию о параметрах биполярного низкочастотного pnp транзистора 2SA1943 . Информация о параметрах, цоколевке, характеристиках, местах продажи и производителях.

Исходный полупроводниковый материал, на основе которого изготовлен транзистор: кремнийСтруктура полупроводникового перехода: pnp

Pc max, мВтUcb max, ВUce max, ВUeb max, ВIc max, мАTj max, °CFt max, ГцCc tip, пФHfe
150000-230-230-5-150001503000000036055/160

Производитель: TOSHIBAСфера применения: схемы питания, выходные каскады hi-fi audioПопулярность: 7794Дополнительные параметры транзистора 2SA1943:
Комплементарная пара — 2SC5200.Условные обозначения описаны на странице «Теория».

2SC5200 Datasheet (PDF)

1.1. 2sc5200bl.pdf Size:213K _update

RoHS
2SC5200BL Series RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
15A/230V/150W
5.00
20.00±0.20
18.00
ø3.30±0.20
TO-3PL
FEATURES
High breakdown voltage, VCEO = 230V (min)
Complementary to 2SA1943BL
0.60
3.20
TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05
heat sink with one screw
1 2 3
APPLICATIONS
Suit

1.2. 2sc5200n.pdf Size:153K _update

2SC5200N
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
2SC5200N
2SC5200N
2SC5200N
1. Applications
1. Applications
1. Applications
1. Applications
• Power Amplifiers
2. Features
2. Features
2. Features
2. Features
(1) High collector voltage: VCEO = 230 V (min)
(2) Complementary to 2SA1943N
(3) Recommended for 100-W high-fidelity audio frequency amplifier output

 1.3. 2sc5200.pdf Size:148K _st

2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
High breakdown voltage VCEO = 230 V
Typical fT = 30 MHz
Application
Audio power amplifier
3
2
1
Description
TO-264
This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviou

1.4. 2sc5200.pdf Size:121K _toshiba

2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm
• High breakdown voltage: V = 230 V (min)
CEO
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 230 V
Collector-emitter

 1.5. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
High Current Capability: IC = 17A.
TO-264
1
High Power Dissipation : 150watts.
High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter
High Voltage : VCEO=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity

1.6. 2sc5200.pdf Size:171K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
? FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
? ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube
www.uniso

1.7. 2sc5200.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5200
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V = 230V(Min)
(BR)CEO
·Complement to Type 2SA1943
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency ampl

1.8. 2sc5200h.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5200H
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V = 300V(Min)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency amplifier
output stage applicati

2SA1942 Datasheet (PDF)

1.1. 2sa1942.pdf Size:185K _toshiba



1.2. 2sa1942.pdf Size:202K _jmnic

JMnic Product Specification
Silicon PNP Power Transistors 2SA1942
DESCRIPTION
·With TO-3PL package
·Complement to type 2SC5199
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 B

 1.3. 2sa1942.pdf Size:219K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1942
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = -160V(Min)
(BR)CEO
·Complement to Type 2SC5199
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RA

transistor circuit diagram of 2sa1943 and 2sc5200:

Here in this article, we can learn how to make a transistor circuit diagram of 2sa1943 and 2sc5200. We can use 2 transistors in this circuit. 1 piece of 2sa1943 and 1 piece of 2sc5200. How many voltages and amperes have to use? We know one transistor can take maximum 1.2 amperes so here in this circuit, we can use 2 transistors. We know Voltage X Ampere = Watts. we can use 2 transistors so 1.2X2=2.4. So we can use 2.4 amperes in this circuit. How many Watts can we get from this circuit? We can use 2.4 amperes. If we use 35 Voltage and 3-ampere transformer then we can get Voltage X ampere= Watts, So 35X3=105 Watts.

this is the circuit diagram.

transistor circuit diagram of 2sa1943 and 2sc5200

Please remember that Always use original or good quality one transistor. How to know about the original transistor? there have many groups of the transistor in our market. For an example, 2sa5200 is the transistor number, and there also have another number, that is the Group number it starts from 120 to up 900++. Please always try to use up to 500++ Group number of the transistor.

transistor circuit diagram of 2sa1943 and 2sc5200transistor circuit diagram of 2sa1943 and 2sc5200

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Center tap transformer for transistor amplifier. transforms is a electrical energy from one circuit to another without any direct electrical connection. We had to use the transformer everywhere. but nowadays we can use SMPS circuit also. in SMPS also have the center tap. Normally we use Positive and Negative voltage transformer. but center tap has 3 output. Positive, Negative and Ground Voltage. we need this transformer for making the amplifier. normally in a transformer has primary and the secondary wire. for primary we use AC 110v/220 voltage. and we can get output from secondary what’s we need. here secondary has 2 wire output. But in a center tap transformer has 3 wire for the output voltage. For this circuit, we have to use center tap transformer.

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Другие разделы справочника:

Добавить описание полевого транзистора.Добавить описание биполярного транзистора.Добавить описание биполярного транзистора с изолированным затвором.Поиск транзистора по маркировке.Поиск биполярного транзистора по основным параметрам.Поиск полевого транзистора по основным параметрам.Поиск БТИЗ (IGBT) по основным параметрам.Типоразмеры корпусов транзисторов.Магазины электронных компонентов.

Есть надежда, что справочник транзисторов окажется полезен опытным и начинающим радиолюбителям, конструкторам и учащимся. Всем тем, кто так или иначе сталкивается с необходимостью узнать больше о параметрах транзисторов. Более подробную информацию обо всех возможностях этого интернет-справочника можно прочитать на странице «О сайте».
Если Вы заметили ошибку, огромная просьба написать письмо.
Спасибо за терпение и сотрудничество.

Биполярный транзистор 2SC5200 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5200

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 150
W

Макcимально допустимое напряжение коллектор-база (Ucb): 250
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 17
A

Статический коэффициент передачи тока (hfe): 55

Корпус транзистора: TO264

2SC5200
Datasheet (PDF)

1.1. 2sc5200bl.pdf Size:213K _update

RoHS
2SC5200BL Series RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
15A/230V/150W
5.00
20.00±0.20
18.00
ø3.30±0.20
TO-3PL
FEATURES
High breakdown voltage, VCEO = 230V (min)
Complementary to 2SA1943BL
0.60
3.20
TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05
heat sink with one screw
1 2 3
APPLICATIONS
Suit

1.2. 2sc5200n.pdf Size:153K _update

2SC5200N
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
2SC5200N
2SC5200N
2SC5200N
1. Applications
1. Applications
1. Applications
1. Applications
• Power Amplifiers
2. Features
2. Features
2. Features
2. Features
(1) High collector voltage: VCEO = 230 V (min)
(2) Complementary to 2SA1943N
(3) Recommended for 100-W high-fidelity audio frequency amplifier output

 1.3. 2sc5200.pdf Size:148K _st

2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
High breakdown voltage VCEO = 230 V
Typical fT = 30 MHz
Application
Audio power amplifier
3
2
1
Description
TO-264
This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviou

1.4. 2sc5200.pdf Size:121K _toshiba

2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm
• High breakdown voltage: V = 230 V (min)
CEO
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 230 V
Collector-emitter

 1.5. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
High Current Capability: IC = 17A.
TO-264
1
High Power Dissipation : 150watts.
High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter
High Voltage : VCEO=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity

1.6. 2sc5200.pdf Size:171K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
? FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
? ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube
www.uniso

1.7. 2sc5200.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5200
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V = 230V(Min)
(BR)CEO
·Complement to Type 2SA1943
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency ampl

1.8. 2sc5200h.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5200H
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V = 300V(Min)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency amplifier
output stage applicati

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SA1943N Datasheet (PDF)

1.1. 2sa1943n.pdf Size:156K _update

2SA1943N
Bipolar Transistors Silicon PNP Triple-Diffused Type
2SA1943N
2SA1943N
2SA1943N
2SA1943N
1. Applications
1. Applications
1. Applications
1. Applications
• Power Amplifiers
2. Features
2. Features
2. Features
2. Features
(1) High collector voltage: VCEO = -230 V (min)
(2) Complementary to 2SC5200N
(3) Recommended for 100-W high-fidelity audio frequency amplifier outpu

3.1. 2sa1943bl.pdf Size:219K _update

RoHS
2SA1943BL Series RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-15A/-230V/150W
5.00
20.00±0.20
18.00
ø3.30±0.20
TO-3PL
FEATURES
High breakdown voltage, VCEO = -230V (min)
Complementary to 2SC5200BL
0.60
3.20
TO-3PL package which can be installed to the 5.45±0.05 5.45±0.05
heat sink with one screw
1 2 3
APPLICATIONS
S

3.2. 2sa1943.pdf Size:133K _toshiba

2SA1943
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
Unit: mm
• High collector voltage: VCEO = -230 V (min)
• Complementary to 2SC5200
• Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO -230 V
Coll

 3.3. 2sa1943 fjl4215.pdf Size:487K _fairchild_semi

January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
High Current Capability: IC = -17A.
High Power Dissipation : 150watts. TO-264
1
High Frequency : 30MHz.
1.Base 2.Collector 3.Emitter
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linear

3.4. 2sa1943.pdf Size:182K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SA1943 PNP SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
1
TO-3PL
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube
2SA194

 3.5. 2sa1943.pdf Size:198K _jmnic

JMnic Product Specification
Silicon PNP Power Transistors 2SA1943
DESCRIPTION
·With TO-3PL package
·Complement to type 2SC5200
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3

3.6. 2sa1943.pdf Size:204K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1943
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V =- 230V(Min)
(BR)CEO
·Complement to Type 2SC5200
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency amp

2SA1980-G Datasheet (PDF)

1.1. 2sa1980-g.pdf Size:244K _update

2SA1980-O
MCC
Micro Commercial Components
TM
2SA1980-Y
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SA1980-G
Phone: (818) 701-4933
Fax: (818) 701-4939 2SA1980-L
Features
• Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
Low Collector Saturation Voltage: V =0.3V(Max.)
CE(sat)
Low Output Capacitance

2.1. 2sa1980-l.pdf Size:244K _update

2SA1980-O
MCC
Micro Commercial Components
TM
2SA1980-Y
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SA1980-G
Phone: (818) 701-4933
Fax: (818) 701-4939 2SA1980-L
Features
• Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
Low Collector Saturation Voltage: V =0.3V(Max.)
CE(sat)
Low Output Capacitance

2.2. 2sa1980-o.pdf Size:244K _update

2SA1980-O
MCC
Micro Commercial Components
TM
2SA1980-Y
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SA1980-G
Phone: (818) 701-4933
Fax: (818) 701-4939 2SA1980-L
Features
• Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
Low Collector Saturation Voltage: V =0.3V(Max.)
CE(sat)
Low Output Capacitance

 2.3. 2sa1980-y.pdf Size:244K _update

2SA1980-O
MCC
Micro Commercial Components
TM
2SA1980-Y
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SA1980-G
Phone: (818) 701-4933
Fax: (818) 701-4939 2SA1980-L
Features
• Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
Low Collector Saturation Voltage: V =0.3V(Max.)
CE(sat)
Low Output Capacitance

Технические характеристики

Рассмотрим основные параметры современного 2SC5200. Они подразделяются в техописании на максимальные и электрические. При этом, температура окружающей среды (TA) не должна превышать +25oC.

Максимальные значения

Максимальные эксплуатационные значения параметров следующие:

  • напряжение: К-Б (VCBO) до 230 В; К-Э (VCEO) до 230 В;Э-Б (VEBO) до 5 В;
  • ток: коллектора (IC) до 15 А; базы (IВ) до 1,5 А;
  • рассеиваемая мощность (РD) до 150 Вт;
  • температура: P-N-перехода (Tj)до 150ОС; рабочая (Tstg) от 55 до +150ОС.

При превышении данных значений эксплуатационные свойства любого полупроводникового устройства резко ухудшаются, что может привести к выходу последнего из строя.

Электрические параметры

Лучших результатов можно добиться применяя устройство с 25-30% запасом от максимальных величин. Оптимальные значения, при которых устройство будет служить долго и не выйдет из строя, отражены в таблице электрических характеристик даташит на полупроводниковый компонент. При этом, в столбце «режимы измерения» указаны условия его тестирования производителями.

В зависимости от коэффициента усиления по току (HFE), эти полупроводниковые устройства делятся на две группы: R (55-110); O (80-160).

Аналоги

В качестве функциональной замены для 2SC5200 можно рассмотреть следующие зарубежные транзисторы: TTC5200, FJL4315, 2SC5242, FJA4313, 2SC6011. Полных аналогов ему не существует. При этом, в российских магазинах радиотоваров они не являются дефицитом.

Полноценный отечественный аналог у транзистора 2sc5200 тоже отсутствует. С большой натяжкой, в качестве замены, можно рекомендовать российский КТ8101А. Но у него другая распиновка и более худшие характеристики по усилению и пропускаемой частоте.

2SA1943 Datasheet Download — UTC

Номер произв2SA1943
ОписаниеPNP SILICON TRANSISTOR
ПроизводителиUTC
логотип  
1Page

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UNISONIC TECHNOLOGIES CO., LTD
2SA1943
PNP SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS

 FEATURES

* Complementary to UTC 2SC5200

* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
1
TO-3PL

 ORDERING INFORMATION

Ordering Number
Lead Free
Halogen Free
Package
2SA1943L-x-T3L-T
2SA1943G-x-T3L-T
TO-3PL
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
Packing
Tube
2SA1943L-x-T3L-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
(1) T: Tube
(2) T3L: TO-3PL

(3) x: refer to Classification of hFE

(4) L: Lead Free, G: Halogen Free and Lead Free

 MARKING

www.unisonic.com.tw
Copyright 2014 Unisonic Technologies Co., Ltd
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2SA1943
PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)

PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage

VCBO

-230
V
Collector-Emitter Voltage

VCEO

-230
V
Emitter-Base Voltage

VEBO

-5
V
Collector Current

IC -15 A

Base Current

IB -1.5 A

Collector Power Dissipation (Tc=25℃)

PC

150
W
Junction Temperature

TJ

+150
°C
Storage Temperature Range

TSTG

-65 ~ +125
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range
and assured by design from –20°C ~85°C

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL

ICBO

IEBO

V(BR) CEO

hFE

hFE

VCE (SAT)

VBE

fT

Cob
TEST CONDITIONS

VCB = -230V, IE=0

VEB= -5V, IC=0

IC= -50mA, IB=0

VCE= -5V, IC= -1A

VCE= -5V, IC= -7A

IC= -8A, IB= -0.8A

VCE= -5V, IC= -7A

VCE= -5V, IC= -1A

VCB= -10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-5.0 μA

-5.0 μA

-230
V
55 160
35 60
-1.5 -3.0 V
-1.0 -1.5 V
30 MHz
360 pF

 CLASSIFICATION OF hFE

Rank
Range
R
55 ~ 110
O
80 ~ 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1943

 TYPICAL CHARACTERISTICS

PNP SILICON TRANSISTOR
-50
-30
Safe Operating

IC MAX. (PULSED) 1ms

Area
IC MAX.

-10 (CONTINUOUS)

10ms
-5
-3
DC
OPERATION

TC =100 C

-1
100ms
-0.5

-0.3 **SINGLE NONREPETITIVE

PULSE TC = 25 C
-0.1
CURVES MUST BE
DERATED LINEARLY

—00..0053-3WTEITMHPEINRC-AR1TEUARSEE.-I3N

VCEO MAX.

-100 -300 -1000

Collector-Emitter Voltage, VCE (V)

Transient Thermal Resistance

10 vs. Pulse Width

CURVES SHOULD BE
APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE

1 PULSE)

INFINTE HEAT SINK
0.1
0.01
0.001 0.01 0.1 1 10 100 1000

Pulse Width, tw (s)

UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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