Datasheet on semiconductor 2n4401

2SC4401 Datasheet (PDF)

1.1. 2sc4401.pdf Size:119K _sanyo

Ordering number:EN2754
NPN Epitaxial Planar Silicon Transistor
2SC4401
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=11dB typ (VCE=3V, IC=3mA)
: NF=3.0dB typ (VCE

4.1. 2sc4409.pdf Size:150K _toshiba

2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Unit: mm
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A)
C
• High speed switching time: t = 500ns (typ.)
stg
• Small flat package
• P = 1~2 W (Mounted on ceramic substrate)
C
• Complementary to 2SA1681
Ma

4.2. 2sc4408.pdf Size:186K _toshiba



 4.3. 2sc4404.pdf Size:113K _sanyo

Ordering number:EN2757
NPN Epitaxial Planar Silicon Transistor
2SC4404
UHF Local Oscillator,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF OSC, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=2.2dB typ (f=0.9GHz)
0~0.1
Very

4.4. 2sc4406.pdf Size:105K _sanyo

Ordering number:EN2759A
NPN Epitaxial Planar Silicon Transistor
2SC4406
VHF Frequency Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF mixer, frequency converters, local oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=1.2GHz typ
0.15
High power gain : PG=15dB typ (f=0.4GHz)
3
Good dependence of fT on current.
0~0.1

 4.5. 2sc4405.pdf Size:112K _sanyo

Ordering number:EN2758
NPN Epitaxial Planar Silicon Transistor
2SC4405
UHF, Low-Noise,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF, low-noise amplifiers, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=1.5dB typ (f=0.9GHz)
0~0

4.6. 2sc4407.pdf Size:105K _sanyo

Ordering number:EN2760
NPN Epitaxial Planar Silicon Transistor
2SC4407
VHF/UHF Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF/UHF mixers, frequency converters, local
unit:mm
oscillators.
2059B

0.3
Features
0.15
High cutoff frequency : fT=3.0GHz typ
3
High power gain : PG=12dB typ (f=0.9GHz)
0~0.1
Small noise figure : NF=3.0dB typ (f

4.7. 2sc4403.pdf Size:112K _sanyo

Ordering number:EN2756
NPN Epitaxial Planar Silicon Transistor
2SC4403
VHF/UHF Local Oscillator Applications
Applications Package Dimensions
VHF/UHF oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=3.0GHz typ
0.15
High power gain : MAG=12dB typ (f=0.9GHz)
3
Small noise figure : NF=2.5dB typ (f=0.9GHz)
0~0.1
Very small-sized package permitti

4.8. 2sc4400.pdf Size:79K _sanyo

Ordering number:EN3195
NPN Epitaxial Planar Silicon Transistor
2SC4400
High-Frequency
General-Purpose Amplifier Applications
Features Package Dimensions
High power gain.
unit:mm
High cutoff frequency.
2059B
Small Cob, Cre.

Very small-sized package permitting the 2SC4400-
0.3
0.15
applied sets to be made small and slim.
3
0~0.1
1 2
0.3 0.6
0.65 0.65
0.9
2

4.9. 2sc4402.pdf Size:120K _sanyo

Ordering number:EN2755
NPN Epitaxial Planar Silicon Transistor
2SC4402
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=12dB typ (VCE=3V, IC=10mA)
: NF=1.5dB typ (VC

4.10. 2sc4409.pdf Size:1046K _kexin

SMD Type Transistors
NPN Transistors
2SC4409
1.70 0.1
■ Features
● Low collector saturation voltage
● High speed switching time
● Small flat package
0.42 0.1
0.46 0.1
● PC = 1~2 W (Mounted on a ceramic substrate)
● Complementary to 2SA1681
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage

H2N4401 Datasheet (PDF)

1.1. h2n4401.pdf Size:53K _hsmc

Spec. No. : HE6215
HI-SINCERITY
Issued Date : 1992.09.22
Revised Date : 2002.02.22
MICROELECTRONICS CORP.
Page No. : 1/5
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4401 is designed for general purpose switching and amplifier applications.
Features
TO-92
• Complementary to H2N4403
• High Power Dissipation: 625 mW at 25°C
• High DC Current Gain: 100-300 at 150mA

4.1. h2n4403.pdf Size:53K _hsmc

Spec. No. : HE6221
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2004.08.13
MICROELECTRONICS CORP.
Page No. : 1/5
H2N4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4403 is designed for general purpose switching and amplifier applications.
Features
TO-92
• Complementary to H2N4401
• High Power Dissipation: 625mW at 25°C
• High DC Current Gain: 100-300 at 150mA

Статус

Поиск транзистора для замены на сайте alltransistors.com

Для поиска эквивалентных замен транзисторов по параметрам можно воспользоваться формами на сайте alltransistors.com:

• Bipolar Transistor Cross-Reference Search (для биполярных транзисторов);
• MOSFET Cross-Reference Search (для полевых транзисторов).

Ниже приведен пример поиска замены для транзистора NTE53.

Информация по транзистору была найдена на сайте www.weisd.com, там указано что 458-056 NTE Equivalent NTE53 — это высоковольтный быстродействующий кремниевый транзистор NPN-структуры в корпусе TO3 (NTE Electronics Inc). Используется в переключающих устройствах, где нужно высокое быстродействие.

Даташит: 458-056 NTE Equivalent NTE53.

Максимальные параметры транзистора из даташита:

• Напряжение Коллектор-Эмиттер: 400В (максимум 800В);
• Напряжение Эмиттер-База: 9В;
• Продолжительный ток Коллектора: 15А;
• Пиковый ток Коллектора: 30А;
• Рассеиваемая транзистором мощность: 175Ватт.

Исходя из приведенных параметров и используя страничку поиска «Bipolar Transistor Cross-Reference Search» можно поискать похожие по параметрам транзисторы, вот пример заполнения формы, исходя из параметров полученных из даташита на NTE53:

После отправки формы было получено 15 результатов:

В зависимости о того в каком устройстве используется транзистор NTE53, нужно пересмотреть даташиты на все найденные транзисторы для замены и выбрать подходящий по быстродействию (если это параметр критичен там где будет использоваться транзистор).

Подготовлено редакцией сайта RadioStorage.net .

Биполярный транзистор 2SC4401 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4401

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 25
V

Макcимальный постоянный ток коллектора (Ic): 0.03
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 3000
MHz

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO236

2SC4401
Datasheet (PDF)

1.1. 2sc4401.pdf Size:119K _sanyo

Ordering number:EN2754
NPN Epitaxial Planar Silicon Transistor
2SC4401
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=11dB typ (VCE=3V, IC=3mA)
: NF=3.0dB typ (VCE

4.1. 2sc4409.pdf Size:150K _toshiba

2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Unit: mm
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A)
C
• High speed switching time: t = 500ns (typ.)
stg
• Small flat package
• P = 1~2 W (Mounted on ceramic substrate)
C
• Complementary to 2SA1681
Ma

4.2. 2sc4408.pdf Size:186K _toshiba



 4.3. 2sc4404.pdf Size:113K _sanyo

Ordering number:EN2757
NPN Epitaxial Planar Silicon Transistor
2SC4404
UHF Local Oscillator,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF OSC, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=2.2dB typ (f=0.9GHz)
0~0.1
Very

4.4. 2sc4406.pdf Size:105K _sanyo

Ordering number:EN2759A
NPN Epitaxial Planar Silicon Transistor
2SC4406
VHF Frequency Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF mixer, frequency converters, local oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=1.2GHz typ
0.15
High power gain : PG=15dB typ (f=0.4GHz)
3
Good dependence of fT on current.
0~0.1

 4.5. 2sc4405.pdf Size:112K _sanyo

Ordering number:EN2758
NPN Epitaxial Planar Silicon Transistor
2SC4405
UHF, Low-Noise,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF, low-noise amplifiers, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=1.5dB typ (f=0.9GHz)
0~0

4.6. 2sc4407.pdf Size:105K _sanyo

Ordering number:EN2760
NPN Epitaxial Planar Silicon Transistor
2SC4407
VHF/UHF Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF/UHF mixers, frequency converters, local
unit:mm
oscillators.
2059B

0.3
Features
0.15
High cutoff frequency : fT=3.0GHz typ
3
High power gain : PG=12dB typ (f=0.9GHz)
0~0.1
Small noise figure : NF=3.0dB typ (f

4.7. 2sc4403.pdf Size:112K _sanyo

Ordering number:EN2756
NPN Epitaxial Planar Silicon Transistor
2SC4403
VHF/UHF Local Oscillator Applications
Applications Package Dimensions
VHF/UHF oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=3.0GHz typ
0.15
High power gain : MAG=12dB typ (f=0.9GHz)
3
Small noise figure : NF=2.5dB typ (f=0.9GHz)
0~0.1
Very small-sized package permitti

4.8. 2sc4400.pdf Size:79K _sanyo

Ordering number:EN3195
NPN Epitaxial Planar Silicon Transistor
2SC4400
High-Frequency
General-Purpose Amplifier Applications
Features Package Dimensions
High power gain.
unit:mm
High cutoff frequency.
2059B
Small Cob, Cre.

Very small-sized package permitting the 2SC4400-
0.3
0.15
applied sets to be made small and slim.
3
0~0.1
1 2
0.3 0.6
0.65 0.65
0.9
2

4.9. 2sc4402.pdf Size:120K _sanyo

Ordering number:EN2755
NPN Epitaxial Planar Silicon Transistor
2SC4402
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=12dB typ (VCE=3V, IC=10mA)
: NF=1.5dB typ (VC

4.10. 2sc4409.pdf Size:1046K _kexin

SMD Type Transistors
NPN Transistors
2SC4409
1.70 0.1
■ Features
● Low collector saturation voltage
● High speed switching time
● Small flat package
0.42 0.1
0.46 0.1
● PC = 1~2 W (Mounted on a ceramic substrate)
● Complementary to 2SA1681
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

PMBT4401 Datasheet (PDF)

1.1. pmbt4401ys.pdf Size:255K _upd

PMBT4401YS
40 V, 600 mA, double NPN switching transistor
2 July 2015 Product data sheet
1. General description
Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted
Device (SMD) plastic package.
Double PNP complement: PMBT4403YS
2. Features and benefits
• Double general-purpose switching transistor
• High current (max. 600 mA)
• Voltage max. 40 V
• A

3.1. pmbt4403ys.pdf Size:261K _upd

PMBT4403YS
40V, 600 mA double PNP switching transistor
2 July 2015 Product data sheet
1. General description
Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted
Device (SMD) plastic package.
Double NPN complement: PMBT4401YS
2. Features and benefits
• Double general-purpose switching transistor
• AEC-Q101 qualified
3. Applications
• Switching and lin

2N4410 Datasheet (PDF)

1.1. 2n4410re.pdf Size:183K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N4410/D
Amplifier Transistor
NPN Silicon
2N4410
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 2904, STYLE 1
Rating Symbol Value Unit
TO92 (TO226AA)
CollectorEmitter Voltage VCEO 80 Vdc
CollectorBase Voltage VCBO 120 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 250 mAdc
To

1.2. 2n4410.pdf Size:294K _fairchild_semi

Discrete POWER & Signal
Technologies
2N4410
C TO-92
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 50 mA. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 80 V
V Coll

 5.1. 2n441.pdf Size:624K _rca

5.2. 2n4416a.pdf Size:17K _update-mosfet

2N4416A
2N4416A
SMALL SIGNAL
N–CHANNEL J–FET THAT IS
DESIGNED TO PROVIDE HIGH
MECHANICAL DATA
PERFORMANCE AMPLIFICATION AT
Dimensions in mm (inches)
HIGH FREQUENCIES
4.95 (0.195)
4.52 (0.178)
4.95 (0.195)
4.52 (0.178)
FEATURES
• EXCELLENT HIGH FREQUENCY GAINS
0.48 (0.019)
0.41 (0.016)
• CECC SCREENING OPTIONS
dia.
• SPACE QUALITY LEVEL OPTIONS
2.54 (0.100)
Nom.

 5.3. 2n4416acsm 2n4416csm.pdf Size:27K _update-mosfet

2N4416CSMA
2N4416ACSM
SMALL SIGNAL
N–CHANNEL J–FET IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
MECHANICAL DATA
Dimensions in mm (inches)
FOR HIGH RELIABILITY APPLICATIONS
0.51 ± 0.10
(0.02 ± 0.004) 0.31
rad.
(0.012)
FEATURES
3
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
21
• CECC SCREENING OPTIONS
1.91 ± 0.10
• SPACE QUALITY LEVEL OPT

5.4. 2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf Size:579K _update-mosfet

SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4416AC1
• Low Noise, High Gain.
• Hermetic Surface Mounted Package.
• Designed For VHF/UHF Amplifiers, Oscillators
And Mixers.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage 35V
VGS
Gate – Source Voltage -35V
VGD
Gate – Drain Voltage -35V
IG

 5.5. 2n4416dcsm.pdf Size:49K _update-mosfet

2N4416DCSM
SEME
LAB
SMALL SIGNAL DUAL
N–CHANNEL J–FET IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
FEATURES
1.40 ± 0.15
2.29 ± 0.20 1.65 ± 0.13
(0.055 ± 0.006)
(0.09 ± 0.008) (0.065 ± 0.005)
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
2 3
• CECC SCREENING OPTIONS
1 4
A
• SPACE

5.6. 2n4416 2n4416a sst4416.pdf Size:81K _vishay

2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N4416 -v6 -30 4.5 5
2N4416A -2.5 to -6 -35 4.5 5
SST4416 -v6 -30 4.5 5
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer
2N4416/A, Gps 13 dB (typ) @
D Very High System Sensitiv

5.7. 2n4416-a.pdf Size:82K _central

TM
2N4416
Central
2N4416A
Semiconductor Corp.
N-CHANNEL JFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4416 and
2N4416A are silicon N-Channel Junction Field
Effect Transistors designed for VHF amplifier and
mixer applications.
MARKING CODE:
Full Part Nmber
JEDEC TO-72 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL 2N4416 2N4416A UNITS
Gate-Drain Voltage VGD 30 35 V
Gate-Source Voltage

5.8. 2n4416-a pn4416.pdf Size:23K _calogic

N-Channel JFET
High Frequency Amplifier
CORPORATION
2N4416 / 2N4416A / PN4416
FEATURES ABSOLUTE MAXIMUM RATINGS
(T = 25oC unless otherwise noted)
A
• Low Noise
•
• Low Feedback Capacitance Gate-Source or Gate-Drain Voltage
•
• Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
•
• High Transconductance 2N4416A . . . .

2N4402 Datasheet (PDF)

1.1. 2n4402 2n4403.pdf Size:297K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N4402/D
General Purpose Transistors
2N4402
PNP Silicon
*
2N4403
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 2904, STYLE 1
Rating Symbol Value Unit
TO92 (TO226AA)
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 40 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
C

1.2. 2n4402.pdf Size:67K _fairchild_semi

2N4402
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
V Collector-Base Voltage 40 V
CBO
VEBO Emitter-Base Voltage5.0V
ICCollector Current — Continuous60

 1.3. 2n4402-2n4403.pdf Size:54K _samsung

2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
TO-92
Collector-Emitter Voltage: VCEO= 40V
Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Collector Dissipation PC 625

1.4. 2n4402 2n4403.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824

 1.5. 2n4402.pdf Size:104K _secos

2N4402
-0.6 A, -40 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
? General Purpose Amplifier Transistor
G H
? Emitter
? Base
? Collector
J
A D
Collector Millimeter
B
REF.
Min. Max.
??
A 4.40 4.70
K
B 4.30 4.70
C 12.70 —
D 3.30 3.81
??
E 0.36 0.56
Base E C

1.6. 2n4402 3.pdf Size:355K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
2N4402 / 2N4403
PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
«T»
C
B
E
General Purpose Switching And Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emi

Замена импортных транзисторов отечественными

Нужно заменить диод или стабилитрон? — аналоги и замены диодов и полупроводников.

Datasheets

General Purpose Transistors

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2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.com Features Pb-Free Packages are Available*COLLECTOR3 MAXIMUM RATINGSRating Symbol Value Unit Collector -Emitter Voltage VCEO 40 Vdc Collector -Base Voltage VCBO 60 Vdc Emitter -Base Voltage VEBO 6.0 Vdc Collector Current -Continuous IC 600 mAdc Total Device Dissipation@ TA = 25В°CDerate above 25В°C PD 6255.0 mWmW/В°C Total Device Dissipation@ TC = 25В°CDerate above 25В°C PD 1.512 WmW/В°C TJ, Tstg -55 to+150 В°C Operating and Storage JunctionTemperature Range THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 В°C/W Thermal Resistance, Junction-to-Case RqJC 83.3 В°C/W Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability. 2BASE …

2N4400 Datasheet (PDF)

1.1. 2n4400 2n4401.pdf Size:303K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N4400/D
General Purpose Transistors
2N4400
NPN Silicon
*
2N4401
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 2904, STYLE 1
Rating Symbol Value Unit
TO92 (TO226AA)
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
C

1.2. 2n4400 mmbt4400.pdf Size:67K _fairchild_semi

2N4400 MMBT4400
C
E
C TO-92
B
B
E SOT-23
Mark: 83
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V

 1.3. 2n4400-2n4401.pdf Size:48K _samsung

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
TO-92
Collector-Emitter Voltage: VCEO= 40V
Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Collector Dissipation PC 625 mW

1.4. 2n4400 2n4401.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824

 1.5. 2n4400.pdf Size:104K _secos

2N4400
0.6 A, 60 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
? General Purpose Amplifier Transistor TO-92
? Emitter
G H
? Base
? Collector
J
A D
Millimeter
Collector
REF.
Min. Max.
B
??
A 4.40 4.70
B 4.30 4.70
K
C 12.70 —
D 3.30 3.81
??
E 0.36 0.56
F 0.36 0.51

1.6. 2n4400 01.pdf Size:353K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
2N4400 / 2N4401
NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
«T»
C
B
E
General Purpose Switching And Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emi