Схемотехника блоков питания персональных компьютеров. часть 5

SBL3030PT — SBL3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features

· Schottky Barrier Chip

· Guard Ring Die Construction for

Transient Protection

· Low Power Loss, High Efficiency

· High Surge Capability

· High Current Capability and Low Forward

Voltage Drop

· For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity
Protection Application

· Plastic Material : UL Flammability

Classification Rating 94V-0
Mechanical Data

· Case: Molded Plastic

· Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

· Polarity: As Marked on Body

· Marking: Type Number

· Weight: 2.24 grams (approx.)

· Mounting Position: Any

H
S
R
P*
*2 Places
N
J
K
QL
G
A
B
C
D
MM
E
TO-3P
Dim Min
Max

A 3.20 3.50

B 4.59 5.16

C 20.80 21.30

D 19.70 20.20

E 2.10 2.40

G 0.51 0.76

H 15.90 16.40

J 1.70 2.70

K 3.10Æ 3.30Æ

L 3.50 4.51

M 5.20 5.70

N 1.12 1.22

P 1.93 2.18

Q 2.97 3.22

R 11.70 12.80

S 4.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current

@ TC = 95°C

(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop

@ IF = 15A, TC = 25°C

Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance

@ TC = 25°C

@ TC = 100°C

(Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Symbol

VRRM

VRWM

VR

VR(RMS)

IO

IFSM

VFM

IRM

Cj

RqJc

Tj, TSTG

SBL
3030PT
30
21
SBL
SBL
SBL
3035PT 3040PT 3045PT
35 40 45
24.5
28 31.5
30
275
0.55
1.0
75
1100
2.0
-65 to +150
SBL
SBL
3050PT 3060PT
50 60
35 42
0.70
Unit
V
V
A
A
V
mA
pF
K/W

°C

Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS23018 Rev. E-2

1 of 2
SBL3030PT — SBL3060PT

30

24
18
12
6

300
250
50 100

TC, CASE TEMPERATURE (°C)

Fig. 1 Forward Derating Curve
150
8.3 ms single half-sine-wave
JEDEC method
200
150
100
SBL3030PT — SBL30450PT
10
SBL3050PT — SBL3060PT
1.0

Tj = 25°C

Pulse width = 300 µs
2% duty cycle
0.1
0.2 0.4 0.6 0.8

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Fwd Characteristics per Element
4000

Tj = 25°C

f = 1MHz
1000
100
50

1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
100
0.1 1.0
10 100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance per Element

TC = 100°C

10

TC = 75°C

1.0

TC = 25°C

0.1

DS23018 Rev. E-2

0.01
0 40 80 120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
2 of 2
SBL3030PT — SBL3060PT