Moc3023

TOSHIBA Photocoupler GaAs Ired & Photo−Triac

TLP762J
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
TLP762J
Unit: mm
The TOSHIBA TLP762J consists of a GaAs infrared LED optically
coupled to a photo-triac in a 6 lead plastic DIP.

• Peak off-state voltage: 600 V (Min.)

• Trigger LED current: 10 mA (Max.)

• On-state current: 100 mA (Max.)

• Isolation voltage: 4000 Vrms (Min.)

• UL recognized: UL1577, file no. E67349

• BSI approved: BS EN60065: 2002,

Certificate No. 8945
BS EN60950-1: 2002,
Certificate No. 8946

• SEMKO approved: SS EN60065 (EN60065, 1993)

SS EN60950 (EN60950, 1992)
SS EN60335 (EN60335, 1988)
Certificate No. 9522145

• Option (D4) type

VDE approved: DIN EN 60747-5-2
Certificate No. 40009373

Maximum operating insulation voltage: 890 VPk

Highest permissible over voltage: 6000 VPk

(Note) When an EN60747-5-2 approved type is needed,
please designate the “option (D4)”.

• Creepage distance:

7.62 mm pich
TLP762J type
7.0 mm (Min.)
Clearance:
7.0 mm (Min.)
Internal creepage path: 4.0 mm (Min.)
Insulation thickness: 0.5 mm (Min.)
10.16 mm pich
TLP762JF type
8.0 mm (Min.)
8.0 mm (Min.)
4.0 mm (Min.)
0.5 mm (Min.)
TOSHIBA

11−7A10

Weight: 0.42 g (Typ.)
Pin configuration (top view)
16
2
34
1 : Anode
2 : Cathode
3 : NC
4 : Terminal 1
6 : Terminal 2
1 2010-10-01

TLP762J

Absolute Maximum Ratings (Ta = 25°C)

Characteristic
Symbol
Rating
Unit
Forward current

Forward current derating (Ta ≥ 53°C)

Peak forward current (100 μs pulse, 100 pps)

Reverse voltage
Junction temperature

Off−state output terminal voltage

On−state RMS current

Ta = 25°C
Ta = 70°C

On−state current derating (Ta ≥ 25°C)

Peak on−state current (100μs pulse, 120 pps)

Peak nonrepetitive surge current
(PW = 10 ms)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)

Isolation voltage (AC, 1 min., R.H.≤ 60%)

IF

ΔIF / °C

IFP

VR

Tj

VDRM

IT(RMS)

ΔIT / °C

ITP

ITSM

Tj

Tstg

Topr

Tsol

BVS

50

−0.7

1
5
125
600
100
50

−1.1

2
1.2
115

−55 to 125

−40 to 100

260
4000
mA
mA / °C
A
V
°C
V
mA
mA / °C
A
A
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current

Peak on−state current

Operating temperature

VAC

― ― 240 Vac

IF 15 20 25 mA

ITP

―― 1

A

Topr −25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2 2010-10-01

Individual Electrical Characteristics (Ta = 25°C)

Characteristic
Forward voltage
Reverse current
Capacitance

Peak off−state current

Peak on−state voltage

Holding current
Critical rate of rise of

off−state voltage

Critical rate of rise of
commutating voltage
Symbol

VF

IR

CT

IDRM

VTM

IH

dv / dt
Test Condition

IF = 10 mA

VR = 5 V

V = 0, f = 1 MHz

VDRM = 600 V

ITM = 100 mA

―
Vin = 240 V, Ta = 85°C

dv / dt (c) Vin = 60 Vrms , IT = 15 mA

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic
Trigger LED current
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol

IFT

CS

RS

BVS

Test Condition

VT = 6 V

VS = 0, f = 1 MHz

VS = 500 V

AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
TLP762J
Min. Typ. Max. Unit
1.0 1.15 1.3
V

― ― 10 μA

― 30 ― pF

― 10 1000 nA

― 1.7 3.0 V

― 0.6 ― mA

― 500 ― V / μs

― 0.2 ― V / μs

Min. Typ. Max. Unit
―
―

1×1012

4000
―
―
―
0.8

1014

―
10000
10000
10
―
―
―
―
―
mA
pF
Ω
Vrms

Vdc

3 2010-10-01