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Занимательные эксперименты: некоторые возможности полевого транзистора

Содержание

1 BC107C Datasheet (PDF)
2 Технические характеристики
3 C103 Datasheet (PDF)
4 F103 Datasheet (PDF)
5 BU103T Datasheet (PDF)
6 Биполярный транзистор BU103T — описание производителя. Основные параметры. Даташиты.
7 BU103T Datasheet (PDF)
8 BUJ103AD Datasheet (PDF)
9 KRA103S Datasheet (PDF)
10 Биполярный транзистор KRA103M — описание производителя. Основные параметры. Даташиты.
11 KRA103M Datasheet (PDF)
12 Биполярный транзистор BC107C — описание производителя. Основные параметры. Даташиты.
13 BC107C Datasheet (PDF)

BC107C Datasheet (PDF)

5.1. bc107 bc108 bc109 4.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BC107; BC108; BC109
NPN general purpose transistors
1997 Sep 03
Product specification
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN general purpose transistors BC107; BC108; BC109
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
Low voltage (max. 45 V).

5.2. bc107 bc108 bc109.pdf Size:49K _philips

5.3. bc107-bc108.pdf Size:69K _st

BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise input stages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Paramete

5.4. bc107 bc107b.pdf Size:383K _st

BC107
BC107B
Low noise general purpose audio amplifiers
Description
The BC107 and BC107B are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise input stages and signal processing circuits
of television receivers. The PNP complementary
types are BC177 and BC177B respectively.
TO-18
Internal schematic diagram
Order codes

5.5. bc107-bc108-bc109.pdf Size:100K _st

BC107
BC108-BC109
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107, BC108 and BC109 are silicon planar
epitaxial NPN transistors in TO-18 metal case.They
are suitable for use in driver stages, low noise input
stages and signal processing circuits of television
receivers. The complementary PNP types are re-
spectively the BC177, BC178 and BC179.
TO-18
INTERNAL SCHEMATIC D

5.6. bc107 bc108 bc109.pdf Size:120K _central

145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
TM
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
www.centralsemi.com

5.7. bc107 bc108 bc109 bc147 bc148 bc149.pdf Size:791K _aeg-telefunken

5.8. bc107dcsm.pdf Size:10K _semelab

BC107DCSM
Dimensions in mm (inches).
Dual Bipolar NPN Devices in
a hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
1.40 ± 0.15
2.29 ± 0.20 1.65 ± 0.13
(0.055 ± 0.006)
(0.09 ± 0.008) (0.065 ± 0.005)
Applications
2 3
1
4
Dual Bipolar NPN Devices.
A
0.23
6 5
rad.
(0.009) V = 45V
CEO
6.22 ± 0.13 A = 1.27 ± 0.13
I = 0.1A
C
(0.05

5.9. bc107 bc108 bc109 a b c.pdf Size:142K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS BC107/A/B/C
BC108/A/B/C
BC109/A/B/C
TO-18
Metal Can Package
Low Noise General Purpose Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT
VCEO
Collector Emitter Voltage 45 25 V
25
VCBO
Collector Base Voltage 50 30 V
30
VEBO
Em

5.10. bc107 bc108 bc109 bc167 bc168 bc169 bc237 bc238 bc239 bc317 bc318 bc319.pdf Size:228K _microelectronics

Технические характеристики

Кт807б

Транзистор S9013 (ТО-92) имеет такие максимально допустимые технические характеристики (при температуре окружающей среды +25ОС):

максимальное напряжение между коллектором и базой V_CBO (U_{кб max}) = 40 В;
наибольшее допустимое напряжение между коллектор-эмиттером V_CEO (U_{кэ max}) = 25 В;
напряжение между эмиттером и базой максимально возможное V_EBO (U_{эб max}) = 5 В;
максимально возможный постоянный ток коллектора I_C (I_{к max}) = 500 мА;
предельно допустимая мощность, рассеиваемая на коллекторе Р_С (Р_{к max}) = 625 мВт;
статический коэффициент передачи тока H_fe (H_21э) от 64 до 400;
диапазон рабочих температур T_stg = -55 … 150ОС;

Устройства в корпусе SOT-23 имеют меньшую допустимую мощность рассеивания — до 300 мВт. Также стоит отметить, что параметр U_{кэ max} у современных производителей может немного отличатся на ± 5 В.

Электрические

Теперь перейдем к рассмотрению электрических значений S9013. Они так же приведены с учетом температуры окружающего воздуха до +25ОС. Показатели дополнительных параметров, при которых производителем проводились измерения, представлены отдельным столбцом. Эти данные свойственны всем транзисторам данного вида, не зависимо от типа корпуса.

Классификация

В зависимости от статического коэффициента передачи по току (h_fe) при V_CE (U_кэ) = 1В и I_C (I_к) =50 мА, рассматриваемое устройство подразделяют на семь классов: D (64-91); Е (78-112); F (96-135); G (112-166); H (144-202); I (190-300), J (300-400). Как видно из классификации, максимальным h_fe обладают транзисторы S9013I и S9013J. В продаже наиболее чаще встречаются S9013H и S9013G, реже S9013D.

Аналоги

У транзистора S9013 отсутствуют полные аналоги. SS9013, C9013, MMBT9013, KTC9013 не в счёт, так как они фактически тоже самое, просто с другой маркировкой. На наш взгляд эта лучшая альтернатива рассматриваемому устройству. Но если таких нет, то можно использовать в качестве замены другие, например: S8050, 2N3904, 2N4401, BC547, BC337, 2N2222 и т. д.

Наиболее подходящим российским аналогом можно считать КТ530. Однако он имеет другую цоколевку (Э Б К), поэтому будьте внимательны при замене. В таком качестве можно рассмотреть также, незначительно отличающуюся по параметрам, отечественную серию КТ680.

Комплементарная пара

Рекомендуемой комплементарной парой, со структурой p-n-p, для рассматриваемого прибора является транзистор S9012.

C103 Datasheet (PDF)

1.1. mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf Size:106K _upd

MMBTRC101SS … MMBTRC106SS
MMBTRC101SS … MMBTRC106SS
Surface Mount Bias Resistor Transistors
NPN NPN
SMD Transistoren mit Eingangsspannungsteiler
Version 2011-02-10
Power dissipation – Verlustleistung 200 mW
±0.1
1.1
2.9
Plastic case SOT-23
0.4
3
Kunststoffgehäuse (TO-236)
Type
Weight approx. – Gewicht ca. 0.01 g
Code
1 2
Plastic material has UL classification 94V-

1.2. dmc1030ufdb.pdf Size:347K _update-mosfet

DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features
ID MAX • Low On-Resistance
Device V(BR)DSS RDS(ON) max
TA = +25°C • Low Input Capacitance
• Low Profile, 0.6mm Max Height
34mΩ @ VGS = 4.5V 5.1A
• ESD Protected Gate
40mΩ @ VGS = 2.5V 4.7A
Q1
12V
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
N-Channel
50mΩ @ VGS

1.3. 2sc1034.pdf Size:453K _sony

1.4. 2sc1030.pdf Size:44K _jmnic

Power Transistors www.jmnic.com
2SC1030
Silicon NPN Transistors
1B 2E 3C
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 150 V
VCEO Collector to emitter voltage 80 V
VEBO Emitter to base voltage 6 V
IC Collector current-Continuous 6 A
PD Total Power Dissipation@TC=25

1.5. 2sc1034.pdf Size:181K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC1034
DESCRIPTION
·DC Current Gain -h = 4(Min)@ I = 0.75A
FE C
·Collector-Emitter Sustaining Voltage-
: V = 700V(Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM

F103 Datasheet (PDF)

О числе 772

1.1. mrf10350.pdf Size:183K _update

MRF10350
Microwave Pulse Power Silicon NPN Transistor
M/A-COM Products
Released — Rev. 07.07
350W (peak), 1025–1150MHz
Product Image
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed performance @ 1090 MHz
Output power = 350 W Peak
Gain = 8.5 dB min, 9.0 dB (typ.)
• 100% tested for load

1.2. mrf1035mbrev0.pdf Size:100K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF1035MB/D
The RF Line
Microwave Pulse
MRF1035MB
Power Transistors
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 35 Watts Peak
35 W (PEAK), 9601215 MHz
Minimum Gain = 10 dB
MICROWAVE

1.3. mrf1032r.pdf Size:55K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF1032/D
The RF Line
UHF Power Transistor
MRF1032
. . . designed primarily for largesignal output and driver amplifier stages to
1.0 GHz.
Designed for Class A Linear Power Amplifiers
Specified 25 Volt, 900 MHz Characteristics:
Output Power 6.0 Watts
Power Gain 6.5 dB Min, Class AB
6.0 W, TO 1.0 GHz
LINEAR
Gold

1.4. mrf1031r.pdf Size:54K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF1031/D
The RF Line
UHF Power Transistor
MRF1031
. . . designed primarily for wideband, largesignal output and driver amplifier
stages to 1.0 GHz.
Designed for Class A Linear Power Amplifiers
Specified 25 Volt, 900 MHz Characteristics:
Output Power 4.5 Watts
Power Gain 7.0 dB Min, Class AB
4.5 W, TO 1.0 GHz
Gol

1.5. mrf10350.pdf Size:101K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF10350/D
The RF Line
Microwave Pulse
MRF10350
Power Transistor
Designed for 10251150 MHz pulse common base amplifier applications
such as TCAS, TACAN and ModeS transmitters.
Guaranteed Performance @ 1090 MHz
Output Power = 350 Watts Peak
350 W (PEAK)
Gain = 8.5 dB Min, 9.0 dB (Typ)
10251150 MHz
MICROWAVE POWER
10

1.6. mrf1030r.pdf Size:54K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF1030/D
The RF Line
UHF Power Transistor
MRF1030
. . . designed primarily for wideband, largesignal output and driver amplifier
stages to 1.0 GHz.
Designed for Class A Linear Power Amplifiers
Specified 25 Volt, 900 MHz Characteristics:
Output Power 3.0 Watts
Power Gain 7.5 dB Min, Class AB
3.0 W, TO 1.0 GHz
LINEA

1.7. mrf1035m.pdf Size:113K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF1035MA/D
The RF Line
Microwave Pulse
MRF1035MA
Power Transistors
MRF1035MB
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 35 Watts Peak
35 W (PEAK), 9601215 MHz
Minimum Gain =

1.8. ssf1030b.pdf Size:390K _silikron

SSF1030B
Feathers:
 Advanced trench process technology
ID =7A
 Ultra low Rdson, typical 25mohm
BV=100V
 High avalanche energy, 100% test
Rdson=25mΩ（typ.）
 Fully characterized avalanche voltage and current
Description:
The SSF1030B is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology

1.9. ssf1030d.pdf Size:826K _silikron

SSF1030D
Feathers:
ID =45A
Advanced trench process technology
BV=100V
Ultra low Rdson, typical 23mohm
Rdson=23mΩ（typ.）
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF1030D is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increa

1.10. ssf1030.pdf Size:536K _silikron

SSF1030
Main Product Characteristics:
VDSS 100V
RDS(on) 20.5mΩ (typ.)
ID 45A ①
Mar ki ng a nd p in
Sche ma ti c di agr a m
TO-220
Assignment
Features and Benefits:
 Advanced Process Technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recov

BU103T Datasheet (PDF)

Транзистор 2n3906

1.1. dbu103t.pdf Size:110K _jdsemi

R
DBU103T
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
and Switch-mode power supplies
2．
2．
2．

1.2. bu103t.pdf Size:108K _jdsemi

R
BU103T
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
Charger and Switch-mode power supplies
2．
2

5.1. bu103a.pdf Size:207K _inchange_semiconductor

isc Silicon NPN Power Transistor BU103A
DESCRIPTION
·Continuous Collector Current-I = 1A
C
·Collector Power Dissipation-
: P = 30W @T = 25℃
C C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV vertical applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 120 V

5.2. bu103ah.pdf Size:105K _jdsemi

R
BU103AH
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger and Switch-mode power supplies
2．
2．
2．FEATURES
2．
High voltage capa

5.3. bu103dh.pdf Size:110K _jdsemi

R
BU103DH
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger and Switch-mode power supplies
2．
2．
2．FEATURES
2．
High voltage capa

5.4. bu103a.pdf Size:109K _jdsemi

R
BU103A
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
and Switch-mode power supplies
2．
2．
2．F

5.5. bu103ad.pdf Size:111K _jdsemi

R
BU103AD
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
and Switch-mode power supplies
2．
2．
2．

5.6. bu103.pdf Size:107K _jdsemi

R
BU103
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
Charger and Switch-mode power supplies
2．
2．

5.7. bu103bd.pdf Size:111K _jdsemi

R
BU103BD
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Fluorescent Lamp、Electronic Ballast、
Charger and Switch-mode power supplies
2．
2

5.8. bu103bh.pdf Size:107K _jdsemi

R
BU103BH
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger and Switch-mode power supplies
2．
2．
2．FEATURES
2．
High voltage capa

Биполярный транзистор BU103T — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BU103T

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.8
W

Макcимально допустимое напряжение коллектор-база (Ucb): 650
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 1.8
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO92

BU103T
Datasheet (PDF)

1.1. dbu103t.pdf Size:110K _jdsemi

1.2. bu103t.pdf Size:108K _jdsemi

5.1. bu103a.pdf Size:207K _inchange_semiconductor

5.2. bu103ah.pdf Size:105K _jdsemi

5.3. bu103dh.pdf Size:110K _jdsemi

5.4. bu103a.pdf Size:109K _jdsemi

5.5. bu103ad.pdf Size:111K _jdsemi

5.6. bu103.pdf Size:107K _jdsemi

5.7. bu103bd.pdf Size:111K _jdsemi

5.8. bu103bh.pdf Size:107K _jdsemi

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

BUJ103AD Datasheet (PDF)

1.1. buj103ad.pdf Size:79K _philips

BUJ103AD
Silicon diffused power transistor
Rev. 01 14 December 2004 Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428
(D-PAK) surface mounted package.
1.2 Features
Low thermal resistance Fast switching
1.3 Applications
Electronic lighting ballasts DC-to-DC converters
Inverters Motor co

3.1. buj103au.pdf Size:65K _philips

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETE

3.2. buj103a hg 2.pdf Size:84K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ103A
Silicon Diffused Power Transistor
August 1998
Product specification
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications,

3.3. buj103a.pdf Size:76K _philips

BUJ103A
Silicon diffused power transistor
Rev. 03 3 March 2005 Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78
(TO-220AB) plastic package.
1.2 Features
Low thermal resistance Fast switching
1.3 Applications
Electronic lighting ballasts DC-to-DC converters
Inverters Motor control syste

3.4. buj103ax.pdf Size:87K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ103AX
Silicon Diffused Power Transistor
August 1998
Product specification
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast

KRA103S Datasheet (PDF)

5.1. kra101-kra106.pdf Size:398K _kec

SEMICONDUCTOR KRA101~KRA106
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B C
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
H

5.2. kra107m-kra109m.pdf Size:389K _kec

SEMICONDUCTOR KRA107M~KRA109M
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
·With Built-in Bias Resistors
·Simplify Circuit Design
DIM MILLIMETERS
O
A 3.20 MAX
·Reduce a Quantity of Parts and Manufacturing Process
H
M B 4.30 MAX
C 0.55 MAX
_
D 2.40 + 0.15
E 1.27
F 2.30
C
_
+
G 14.00

5.3. kra101m-kra106m.pdf Size:422K _kec

SEMICONDUCTOR KRA101M~KRA106M
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
DIM MILLIMETERS
O
A 3.20 MAX
·Reduce a Quantity of Parts and Manufacturing Process.
H
M B 4.30 MAX
C 0.55 MAX
_
D 2.40 + 0.15
E 1.27
F 2.30
C
_
+
G 14.00

5.4. kra101s-kra106s.pdf Size:1013K _kec

SEMICONDUCTOR KRA101S~KRA106S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
·With Built-in Bias Resistors.
_
+
A 2.93 0.20
B 1.30+0.20/-0.15
·Simplify Circuit Design.
C 1.30 MAX
2
3 D 0.40+0.15/-0.05
·Reduce a Quantity of Parts and Manufacturing Process.
E 2.40+0.30/-0

5.5. kra107-kra109.pdf Size:377K _kec

SEMICONDUCTOR KRA107~KRA109
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B C
FEATURES
·With Built-in Bias Resistors
·Simplify Circuit Design
·Reduce a Quantity of Parts and Manufacturing Process
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
EQUIVALENT CI

5.6. kra107s-kra109s.pdf Size:391K _kec

SEMICONDUCTOR KRA107S~KRA109S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
_
+
A 2.93 0.20
·With Built-in Bias Resistors.
B 1.30+0.20/-0.15
C 1.30 MAX
·Simplify Circuit Design.
2
3 D 0.40+0.15/-0.05
·Reduce a Quantity of Parts and Manufacturing Process.
E 2.40+0.30

5.7. kra101s-106s.pdf Size:1357K _kexin

SMD Type Transistors
PNP Transistors
KRA101S ~ KRA106S
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● With Built-in Bias Resistors.
● Simplify Circuit Design.
1 2
● Reduce a Quantity of Parts and Manufacturing Process.
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.IN(B)
2.COMMON(E)
3.OUT(C)
BIAS RESISTOR VALUES
TYPE NO.
R1(k ) R2(k )
OUT
KRA101S