Стабилитроны 1n4728a — 1n4764a кремниевые, планарные для стабилизации напряжения от 3,3 до 100 в в диапазоне токов стабилизации до 76 ма, характеристики, параметры, описание

NTMFS4744NT1G Datasheet (PDF)

1.1. ntmfs4744nt1g.pdf Size:129K _update-mosfet

NTMFS4744N
Power MOSFET
30 V, 53 A, Single N-Channel, SO-8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
http://onsemi.com
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb-Free Devices
V(BR)DSS RDS(on) MAX ID MAX
Applications
10 mW @ 10 V
• CPU Power Delivery 30 V 53 A
14 mW @ 4.5 V
• DC-DC Conver

1.2. ntmfs4744n-d.pdf Size:87K _onsemi

NTMFS4744N
Power MOSFET
30 V, 53 A, Single N-Channel, SO-8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
http://onsemi.com
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
V(BR)DSS RDS(on) MAX ID MAX
Applications
10 mW @ 10 V
CPU Power Delivery 30 V 53 A
14 mW @ 4.5 V
DC-DC Converters
Low Sid

 3.1. ntmfs4708nt1g.pdf Size:92K _update-mosfet

NTMFS4708N
Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
• Fast Switching Times
• Low Gate Charge
http://onsemi.com
• Low RDS(on)
• Low Inductance SOIC-8 Package
V(BR)DSS RDS(on) Typ ID Max
• These are Pb-Free Devices
Applications
7.3 mW @ 10 V
30 V 19 A
• Notebooks, Graphics Cards
10.1 mW @ 4.5 V
• DC-DC Converters
• Synchronous Rectification
N

3.2. ntmfs4707nt1g.pdf Size:125K _update-mosfet

NTMFS4707N
Power MOSFET
30 V, 17 A, Single N-Channel,
SOIC-8 Flat Lead
Features
• Fast Switching Times
http://onsemi.com
• Low Gate Charge
• Low RDS(on)
V(BR)DSS RDS(on) Typ ID Max
• Low Inductance SOIC-8 Package
• These are Pb-Free Devices 10 mW @ 10 V
30 V 17 A
13.5 mW @ 4.5 V
Applications
• Notebooks, Graphics Cards
• DC-DC Converters
N-Channel
• Synchronou

 3.3. ntmfs4701nt1g.pdf Size:127K _update-mosfet

NTMFS4701N
Power MOSFET
30 V, 20 A, Single N-Channel,
SOIC-8 Flat Lead Package
Features
• Thermally and Electrically Enhanced Packaging Compatible with
http://onsemi.com
Standard SOIC-8
• New Package Provides Capability of Inspection and Probe After
Board Mounting
V(BR)DSS RDS(on) Typ ID Max
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
6.0 mW @ 10 V
30 V

3.4. ntmfs4701n.pdf Size:85K _onsemi

NTMFS4701N
Power MOSFET
30 V, 20 A, Single N-Channel,
SOIC-8 Flat Lead Package
Features
Thermally and Electrically Enhanced Packaging Compatible with
Standard SOIC-8
http://onsemi.com
New Package Provides Capability of Inspection and Probe After
Board Mounting
V(BR)DSS RDS(on) Typ ID Max
Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
6.0 mW @ 10 V
Optimized fo

 3.5. ntmfs4707n.pdf Size:85K _onsemi

NTMFS4707N
Power MOSFET
30 V, 17 A, Single N-Channel,
SOIC-8 Flat Lead
Features
Fast Switching Times
http://onsemi.com
Low Gate Charge
Low RDS(on)
Low Inductance SOIC-8 Package
V(BR)DSS RDS(on) Typ ID Max
These are Pb-Free Devices
10 mW @ 10 V
30 V 17 A
Applications
13.5 mW @ 4.5 V
Notebooks, Graphics Cards
DC-DC Converters
Synchronous Rectification N-Channel
D

3.6. ntmfs4708n.pdf Size:92K _onsemi

NTMFS4708N
Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
Fast Switching Times
Low Gate Charge
http://onsemi.com
Low RDS(on)
Low Inductance SOIC-8 Package
V(BR)DSS RDS(on) Typ ID Max
These are Pb-Free Devices
Applications
7.3 mW @ 10 V
30 V 19 A
Notebooks, Graphics Cards
10.1 mW @ 4.5 V
DC-DC Converters
Synchronous Rectification
N-Channel
MAXIMUM R

IN4744A Datasheet Download — Fairchild Semiconductor

Номер произвIN4744A
Описание(IN4728A — IN4764A) Zener Diode
ПроизводителиFairchild Semiconductor
логотип  
1Page

No Preview Available !

1N4728A — 1N4764A
Zeners
January 2005
DO-41 Glass case
COLOR BAND DENOTES CATHODE

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Symbol
Parameter

PD Power Dissipation

@ TL ≤ 50°C, Lead Length = 3/8”

Derate above 50°C

TJ, TSTG Operating and Storage Temperature Range

* These ratings are limiting values above which the serviceability of the diode may be impaired.
Value
1.0
6.67
-65 to +200

Electrical Characteristics Ta = 25°C unless otherwise noted

Device
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A

VZ (V) @ IZ (Note 1)

Min. Typ. Max.
3.315 3.3 3.465
3.42 3.6 3.78
3.705 3.9 4.095
4.085 4.3 4.515
4.465 4.7 4.935
4.845 5.1 5.355
5.32 5.6 5.88
5.89 6.2 6.51
6.46 6.8 7.14
7.125 7.5 7.875
7.79 8.2 8.61
8.645 9.1 9.555
9.5 10 10.5
10.45 11 11.55
11.4 12 12.6
12.35 13 13.65
14.25 15 15.75
15.2 16 16.8
17.1 18 18.9
19 20 21
Test Current

IZ (mA)

76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
Max. Zener Impedance

ZZ @ IZ

(Ω)

10
10
9
9
8

ZZK @

IZK (Ω)

400
400
400
400
500

IZK

(mA)
1
1
1
1
1
7 550 1
5 600 1
2 700 1
3.5 700 1
4 700 0.5
4.5 700 0.5
5 700 0.5
7 700 0.25
8 700 0.25
9 700 0.25
10 700 0.25
14 700 0.25
16 700 0.25
20 750 0.25
22 750 0.25
Units
W

mW/°C

°C

Leakage Current

IR

(µA)

VR

(V)
100 1
100 1
50 1
10 1
10 1
10 1
10 2
10 3
10 4
10 5
10 6
10 7
10 7.6
5 8.4
5 9.1
5 9.9
5 11.4
5 12.2
5 13.7
5 15.2
2005 Fairchild Semiconductor Corporation
1N4728A — 1N4764A Rev. G2
1
www.fairchildsemi.com

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted

Device
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A

VZ (V) @ IZ (Note 1)

Min. Typ. Max.
20.9 22 23.1
22.8 24 25.2
25.65 27 28.35
28.5 30 31.5
31.35 33 34.65
34.2 36 37.8
37.05 39 40.95
40.85 43 45.15
44.65 47 49.35
48.45 51 53.55
53.2 56 58.8
58.9 62 65.1
64.6 68 71.4
71.25 75 78.75
77.9 82 86.1
86.45 91 95.55
95 100 105
Test Current

IZ (mA)

11.5
10.5
9.5
8.5
7.5
7
6.5
6
5.5
5
4.5
4
3.7
3.3
3
2.8
2.5
Max. Zener Impedance

ZZ @ IZ ZZK @ IZK

(Ω) IZK (Ω) (mA)

23 750 0.25
25 750 0.25
35 750 0.25
40
1000
0.25
45
1000
0.25
50
1000
0.25
60
1000
0.25
70
1500
0.25
80
1500
0.25
95
1500
0.25
110
2000
0.25
125
2000
0.25
150
2000
0.25
175
2000
0.25
200
3000
0.25
250
3000
0.25
350
3000
0.25
Leakage Current

IR

(µA)

VR

(V)
5 16.7
5 18.2
5 20.6
5 22.8
5 25.1
5 27.4
5 29.7
5 32.7
5 35.8
5 38.8
5 42.6
5 47.1
5 51.7
5 56
5 62.2
5 69.2
5 76
Notes:

1. Zener Voltage (VZ)

The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length.

1N4728A — 1N4764A Rev. G2
2
www.fairchildsemi.com

No Preview Available !

Top Mark Information
Device
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
Line 1
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
Line 2
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47
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47
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47
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47
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Line 3
28
29
30
31
32
33
34
35
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48
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64
Line 4
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
Line 5
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
1N4728A — 1N4764A Rev. G2
3
www.fairchildsemi.com

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NTMFS4744NT1G MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTMFS4744NT1G

Маркировка: 4744N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.88
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 2.5
V

Максимально допустимый постоянный ток стока (Id): 7
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 10
nC

Время нарастания (tr): 203
ns

Выходная емкость (Cd): 550
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.01
Ohm

Тип корпуса: SO-8FL

NTMFS4744NT1G
Datasheet (PDF)

1.1. ntmfs4744nt1g.pdf Size:129K _update-mosfet

NTMFS4744N
Power MOSFET
30 V, 53 A, Single N-Channel, SO-8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
http://onsemi.com
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb-Free Devices
V(BR)DSS RDS(on) MAX ID MAX
Applications
10 mW @ 10 V
• CPU Power Delivery 30 V 53 A
14 mW @ 4.5 V
• DC-DC Conver

1.2. ntmfs4744n-d.pdf Size:87K _onsemi

NTMFS4744N
Power MOSFET
30 V, 53 A, Single N-Channel, SO-8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
http://onsemi.com
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
V(BR)DSS RDS(on) MAX ID MAX
Applications
10 mW @ 10 V
CPU Power Delivery 30 V 53 A
14 mW @ 4.5 V
DC-DC Converters
Low Sid

 3.1. ntmfs4708nt1g.pdf Size:92K _update-mosfet

NTMFS4708N
Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
• Fast Switching Times
• Low Gate Charge
http://onsemi.com
• Low RDS(on)
• Low Inductance SOIC-8 Package
V(BR)DSS RDS(on) Typ ID Max
• These are Pb-Free Devices
Applications
7.3 mW @ 10 V
30 V 19 A
• Notebooks, Graphics Cards
10.1 mW @ 4.5 V
• DC-DC Converters
• Synchronous Rectification
N

3.2. ntmfs4707nt1g.pdf Size:125K _update-mosfet

NTMFS4707N
Power MOSFET
30 V, 17 A, Single N-Channel,
SOIC-8 Flat Lead
Features
• Fast Switching Times
http://onsemi.com
• Low Gate Charge
• Low RDS(on)
V(BR)DSS RDS(on) Typ ID Max
• Low Inductance SOIC-8 Package
• These are Pb-Free Devices 10 mW @ 10 V
30 V 17 A
13.5 mW @ 4.5 V
Applications
• Notebooks, Graphics Cards
• DC-DC Converters
N-Channel
• Synchronou

 3.3. ntmfs4701nt1g.pdf Size:127K _update-mosfet

NTMFS4701N
Power MOSFET
30 V, 20 A, Single N-Channel,
SOIC-8 Flat Lead Package
Features
• Thermally and Electrically Enhanced Packaging Compatible with
http://onsemi.com
Standard SOIC-8
• New Package Provides Capability of Inspection and Probe After
Board Mounting
V(BR)DSS RDS(on) Typ ID Max
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
6.0 mW @ 10 V
30 V

3.4. ntmfs4701n.pdf Size:85K _onsemi

NTMFS4701N
Power MOSFET
30 V, 20 A, Single N-Channel,
SOIC-8 Flat Lead Package
Features
Thermally and Electrically Enhanced Packaging Compatible with
Standard SOIC-8
http://onsemi.com
New Package Provides Capability of Inspection and Probe After
Board Mounting
V(BR)DSS RDS(on) Typ ID Max
Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
6.0 mW @ 10 V
Optimized fo

 3.5. ntmfs4707n.pdf Size:85K _onsemi

NTMFS4707N
Power MOSFET
30 V, 17 A, Single N-Channel,
SOIC-8 Flat Lead
Features
Fast Switching Times
http://onsemi.com
Low Gate Charge
Low RDS(on)
Low Inductance SOIC-8 Package
V(BR)DSS RDS(on) Typ ID Max
These are Pb-Free Devices
10 mW @ 10 V
30 V 17 A
Applications
13.5 mW @ 4.5 V
Notebooks, Graphics Cards
DC-DC Converters
Synchronous Rectification N-Channel
D

3.6. ntmfs4708n.pdf Size:92K _onsemi

NTMFS4708N
Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
Fast Switching Times
Low Gate Charge
http://onsemi.com
Low RDS(on)
Low Inductance SOIC-8 Package
V(BR)DSS RDS(on) Typ ID Max
These are Pb-Free Devices
Applications
7.3 mW @ 10 V
30 V 19 A
Notebooks, Graphics Cards
10.1 mW @ 4.5 V
DC-DC Converters
Synchronous Rectification
N-Channel
MAXIMUM R

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, SMG2305
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, SMG2306N
, SMG2306NE
, SMG2310A
.

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